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7776303 Production of ultrafine metal carbide particles utilizing polymeric feed materials  
The production of ultrafine metal carbide powders from polymeric powder and metallic precursor powder starting materials is disclosed. In certain embodiments, the polymeric powder may comprise...
7767021 Growing method of SiC single crystal  
A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of α-phase and making a...
7763224 Method for siliconizing carbon-containing materials  
A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under...
7758928 Functionalisation of particles  
This invention relates to a method of functionalizing a powdered substrate. The method comprises the following steps, which method comprises passing a gas into a means for forming excited and/or...
7691357 Method for producing polycrystalline silicon  
A by-product mixture produced when polycrystalline silicon is deposited on a base material in a CVD reactor is made to react with chlorine to form a tetrachlorosilane (STC) effluent in a...
7658863 Si-C-O composite, making method, and non-aqueous electrolyte secondary cell negative electrode material  
A Si—C—O composite powder is obtained by curing a reactive silane or siloxane having crosslinkable groups through heat curing or catalytic reaction into a crosslinked product and sintering the...
7638108 High purity silicon-containing products  
Silicon-containing products, such as silicon, silicon carbide and silicon nitride, containing less than 0.01 weight percent total mineral impurities and selectively determined carbon-to-silicon...
7608145 Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby  
Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the...
7588745 Silicon-containing products  
A method for producing carbon-silica products from silica-containing plant matter such as rice hulls or straw by leaching with sulfuric acid to remove non-silica minerals and metal while adjusting...
7576035 Honeycomb structure and method for manufacturing honeycomb structure  
A pillar-shaped honeycomb structure has a plurality of cells longitudinally placed in parallel with one another with a wall portion therebetween, wherein the honeycomb structure mainly includes...
7569201 Method of manufacturing honeycomb structure and silicon carbide particle for manufacturing the same  
A method of manufacturing a honeycomb structure. (1) Water is added to silicon carbide particles and kneaded into a kneaded raw material. The silicon carbide particles have an average particle...
7521034 3C-SiC nanowhisker  
3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of...
7504359 Ceramic honeycomb structure  
A honeycomb structural body comprises one or plural pillar-shaped porous ceramic members in which many through-holes are arranged side by side in a longitudinal direction through partition walls...
7485278 Method for making silicon carbide whiskers  
A ceramic composite made by compacting a starting powder blend. The composite includes between about 50 volume percent and about 99 volume percent of a ceramic matrix; and between about 1 volume...
7479265 Catalytic filter based on silicon carbide (β-SiC) for combustion of soot derived from exhaust gases from an internal combustion engine  
This invention relates to β-SiC foam parts with a specific surface area preferably equal to at least 5 m2/g and with at least two zones A and B with a different cellular porosity distribution,...
7452591 Silicon carbide based porous material and method for production thereof  
A silicon carbide-based porous material characterized by comprising silicon carbide particles as an aggregate, metallic silicon and an oxide phase containing Si, Al and an alkaline earth metal; it...
7438880 Production of high purity ultrafine metal carbide particles  
The production of ultrafine metal carbide powders from solid metal carbide and nitrogen-containing material is disclosed. The starting materials are fed together or separately to a plasma system...
7438884 Silicon carbide with high thermal conductivity  
A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions...
7393514 Carbide nanofibrils and method of making same  
A plurality of carbide, such as silicon carbide, tungsten carbide, etc., nanofibrils predominantly having diameters substantially less than about 100 nm and a method for making such carbide...
7364714 3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker  
3C—SiC nanowhisker and a method of synthesizing 3C—SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of...
7294324 Low basal plane dislocation bulk grown SiC wafers  
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a...
7109138 Composition for preparation of silicon carbide powder  
The synergistic composition consists of a mixture of a source of pure silica such as silicon dioxide, a source of carbon such as activated charcoal, β-silicon carbide and a source of iron such as...
7083771 Process for producing silicon carbide fibers essentially devoid of whiskers  
Method for producing silicon carbide fibers by mixing discontinuous isotropic carbon fibers with a silica source and exposing the mixture to a temperature of from about 1450° C. to about 1800° C....
7041266 Silicon carbide fibers essentially devoid of whiskers and products made therefrom  
Silicon carbide fibers are produced by mixing discontinuous isotropic carbon fibers with a silica source and exposing the mixture to a temperature of from about 1450° C. to about 1800° C. The...
7037477 Silicon carbide-based porous material and process for production thereof  
A silicon carbide-based porous material containing silicon carbide particles (1) as an aggregate and metallic silicon (2), wherein the average particle diameter of the silicon carbide-based porous...
7029643 Silicon carbide powder and method for producing the same  
A method of producing a silicon carbide powder comprising sintering a mixture containing at least a silicon source and a carbon source wherein the carbon source is a xylene-based resin. Preferable...
7029511 Si-containing honeycomb structure and process for production thereof  
A honeycomb structure 1 has a large number of through-holes 3 divided by partition walls 2 and extending in the axial direction, characterized in that the honeycomb structure contains a Si phase...
7018597 High resistivity silicon carbide single crystal  
The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for...
7018467 Three-dimensional complete bandgap photonic crystal formed by crystal modification  
A method of forming a three-dimensional (3D) complete photonic bandgap crystal by crystal modification is disclosed. The 3D crystal includes a first periodic array of unit cells formed from first...
7011803 Honeycomb structure and method for its manufacture  
A honeycomb structure having a large number of channels through along the axial direction and being defined by partition walls. A honeycomb structure containing a refractory particle to be an...
6964932 Silicon carbonitride with spinel structure  
A compound having a space spinel structure and the formula Si3-x Cx N4 wherein 0
6953539 Composite material  
A composite material includes an SiC porous ceramic sintered body, which is formed by preliminarily sintering a porous body, having a coefficient of thermal expansion lower than the coefficient of...
6863759 Methods for making composite bonded structures  
Techniques to bond two or more smaller bodies or subunits to produce a unitary SiC composite structure extend the capabilities of reaction-bonded silicon carbide, for example, by making possible...
6861038 Ceramics and method of producing ceramics  
A method of continuously producing a non-oxide ceramic formed of a metal constituent and a non-metal constituent. A salt of the metal constituent and a compound of the non-metal constituent and a...
6843974 Method for extracting silica from herbaceous plants  
A method for extracting silica from herbaceous plant capable of extracting high purity amorphous silica from seed shell of various herbaceous plants is provided. The method includes carbonizing a...
6818189 Tubular reactor with gas injector for gas phase catalytic reactions  
A continuous flow chemical reaction apparatus comprises a tubular reactor having a length and having a first fluid reactant inlet at a first end and a product outlet at a second end, said tubular...
6767523 Whisker-free silicon carbide fibers  
Method for producing discontinuous silicon carbide fibers, useful as heating elements in a low-energy microwave field, from discontinuous carbonized cotton fibers employing an admixture of...
6746656 Methods for production of molybdenum carbide  
Methods for producing molybdenum carbide. An embodiment of the method may comprise heating a precursor material in a first heating zone in the presence of a reducing gas and a carbonizing gas, the...
6730283 Preparation of fine β-silicon carbide powder  
A fine β-silicon carbide powder is prepared by impregnating graphite with an organosilicon compound selected from crosslinkable silanes and siloxanes, causing the organosilicon compound to...
6723421 Semiconductor with coordinatively irregular structures  
A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A...
6699412 Compression-molded silicon carbide structures  
A process for forming a silicon carbide structure includes molding by compression a mixture of a silicon precursor powder and a cross-linking thermoset resin to form a rigid structure, carbonizing...
6699450 Carbide material by electromagnetic processing  
A method for the manufacture of a structure from a carbide of a group IIa, group IIIa, group IVa, group IVb, group Vb, group VIb, group VIIb or group VIIIb carbon reactive element including the...
6695984 Silicon carbide sinter and process for producing the same  
The present invention provides: a fabrication method of a silicon carbide sintered body, including a step of fabricating a mixed powder slurry by dissolving or dispersing silicon carbide powder,...
6627169 Silicon carbide powder and production method thereof  
A high purity silicon carbide powder, a production method thereof, and a high purity silicon carbide sintered body are provided. The silicon carbide powder contains impurity elements, each of the...
6613251 Method of forming a ceramic article including silicon carbide  
A method of making a ceramic article includes the providing a member. The member includes a cellulose-based material. The cellulose-based material is carbonized to carbon. At least a portion of...
6589448 Ceramic ball for bearing and ceramic ball bearing using the same  
A ceramic bearing ball in which at least a portion of a constituent ceramic is formed of an electrically conductive inorganic compound phase, whereby a proper electrical conductivity is imparted...
6569397 Very high purity fine powders and methods to produce such powders  
A method of producing very high purity fine powders of oxides, carbides, nitrides, borides, chalcogenides, metals, and alloys. The purity of powders produced by the method exceeds 99.9%,...
6562130 Low defect axially grown single crystal silicon carbide  
A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square...
6548586 Composition useful for making in-situ silicon carbide whiskers and fibres  
A composition useful for making in-situ silicon carbide whiskers and fibers in an inorganic composite matrix selected from silicon carbide carbon and carbon composite matrix, wherein the said...
6534026 Low defect density silicon carbide  
A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation...

Matches 51 - 100 out of 450 < 1 2 3 4 5 6 7 8 9 >