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7927516 Method for synthesis of colloidal nanoparticles  
A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited...
7842639 Mechanical alloying of a hydrogenation catalyst used for the remediation of contaminated compounds  
A hydrogenation catalyst including a base material coated with a catalytic metal is made using mechanical milling techniques. The hydrogenation catalysts are used as an excellent catalyst for the...
6340535 Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device  
This invention relates to a method for the heat treatment of a ZnSe crystal substrate to dope it with Al as a donor impurity, a ZnSe crystal substrate prepared by this heat treatment and a...
6207844 Compounds and methods for depositing pure thin films of gallium nitride semiconductor  
The invention is directed to novel compounds which serve as single-source precursors for the deposition of gallium nitride on thin films. The invention is also directed to methods for the...
6110829 Ultra-low temperature Al fill for sub-0.25 μm generation of ICs using an Al-Ge-Cu alloy  
An aluminum fill process for sub-0.25 μm technology integrated circuits that has a reflow temperature less than 400° C. that has low alloy resistivity and excellent electromigration...
5628933 Transparent conductors comprising zinc-indium-oxide and methods for making films  
Applicant has discovered that aliovalently doped zinc-indium-oxide where In is 40-75% of the metal elements can achieve electrical conductivity comparable to wide band-gap semiconductors presently...
5474591 Method of synthesizing III-V semiconductor nanocrystals  
The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low...
5175056 Galvanically compatible conductive filler  
Composite particles designed as a filler for gaskets, caulking compounds and plastics in general. The unique properties are obtained by using a soft metal core galvanically similar to the metal...
4775425 P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same  
An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap...
4764212 Thermoelectric material for low temperature use and method of manufacturing the same  
This invention relates to a method of manufacturing thermoelectric material which has the steps of quenching a thermoelectric alloy in a molten state at a quenching rate higher than 103 ° C./sec...
4600801 Fluorinated, p-doped microcrystalline silicon semiconductor alloy material  
A fluorinated, p-doped microcrystalline semiconductor alloy material; electronic devices incorporating said p-doped material; and the method for fabricating said p-doped material.
4522663 Method for optimizing photoresponsive amorphous alloys and devices  
The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made...
4499331 Amorphous semiconductor and amorphous silicon photovoltaic device  
An amorphous silicon semiconductor of the general formula: a-Si(1-x-y) Cx Ny containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an...
4478654 Amorphous silicon carbide method  
Preparation of amorphous semiconductor carbides that are suitable for use in a wide variety of devices by the pyrolytic decomposition of a mixture of one or more semiconductanes and one or more...
4462959 HgCdTe Bulk doping technique  
Controllable doping of HgCdTe in concentrations low enough to be useful for electronic devices is accomplished by dissolving the desired dopant in mercury at or below the solubility limit. The...
4447393 Oxide-free CdTe synthesis  
The problem of CdTe sticking to quartz boats is avoided by preventing any presence of cadmium oxides in the as-compounded CdTe. This is accomplished by distilling the cadmium under a high vacuum...
4419151 Crystal and germanium modification and process for its preparation  
A new crystalline modification of germanium is described, as well as a method of manufacturing it. This new crystalline germanium modification has an orthorhombic structure and graphite-like...
4415531 Semiconductor materials  
A novel pseudobinary alloy of Pb1-x Mx S, wherein 0
4317680 Diffusion source and method of preparing  
The present invention is directed to a diffusion source for establishing a p-type conductivity region in a semiconductor device and to a method for preparing such diffusion source. The diffusion...
4238232 Metallic modified material of intermetallic compound  
The present invention is concerned with a new metallic modified material of intermetallic compound, which has the same chemical composition as an intermetallic compound semi-conductor with a...
4213781 Deposition of solid semiconductor compositions and novel semiconductor materials  
Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential....
4170471 Silver alloys for metallization of magnetic bubble domain devices  
There is described a metal alloy which provides improved operating characteristics and parameters for, inter alia, magnetic bubble domain devices.
4124410 Silicon solar cells with low-cost substrates  
Epitaxial and diffusion-type planar diodes and solar cells utilize low-cost refined metallurgical silicon substrates having a substantially higher impurity content than conventional high-cost,...
4119704 Process for making gallium arsenide or phosphide  
A process for producing gallium arsenide or phosphide at temperatures below he sublimation point of arsenic and red phosphorus, respectively, which consists of grinding and tempering a mixture of...
4116725 Heat treatment of cadmium mercury telluride and product  
A method of improving certain characteristics of cadmium mercury telluride single crystal material by heat treating the single crystal material in the presence of both tellurium and mercury.
4093704 Method for synthesis of III-V compounds  
The invention relates to a method for the synthesis of a semiconductor compound comprising at least one element of column III of the periodic table of Mendeleev, and an element of column V having...
4087294 Lithium doped mercury cadmium telluride  
Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the...
4086106 Halogen-doped Hg,Cd,Te  
Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient...
4063210 Temperature independent semiconductor resistor and method of making same  
A polycrystalline film having an electrical resistivity independent of temperature is disclosed. The film has substantially only one crystalline phase. The crystals forming that phase are of a...
4003741 Method of preparation of semiconducting compounds  
A method of preparation of a ternary or quaternary alloy composed of the elements A1 A2 A3 (ternary alloy) or the elements A1 A2 A3 A4 (quaternary alloy) consists of the successive steps of...
3991163 Process for the production of III-V compounds  
A process for the production of compact polycrystalline III A - V B compounds such as GaP through direct synthesis from the components in a closed horizontal system, in which at least one of the...
3966881 Method of making a single crystal intermetallic compound semiconductor  
A method of making a single crystal intermetallic compound semiconductor which includes growing a single crystal in a crucible while maintaining the extent of the melt beyond the growing surface...
3957954 High-temperature reaction method for producing group II-VI or a group III-V compound  
A high-temperature reaction method is disclosed. The method comprises coupling an inductive heating coil to the contents of a reaction vessel, containing at least one conductive reactant with a...
3957693 Process for producing selenium homogeneously doped with tellurium  
A process for producing selenium homogeneously doped with a metal. The process comprises mixing the metal with selenium, melting the selenium and mixing the resulting melt in the absence or...
3947549 Preparation of indium phosphide  
A method of preparing III-V material which is or contains one of the compounds aluminum nitride, indium nitride, indium phosphide, gallium phosphide and gallium nitride involves directing a...
3853632 THERMOELECTRIC COMPOSITION  
A P-type, thermoelectrically useful alloy composition consisting of copper, silver, and either tellurium or selenium.
3853550 METHOD FOR FABRICATING BIMETALLIC MEMBERS OF THERMOELEMENTS BY SINTERING POWDERED COMPACTS IN THE PRESENCE OF GRAPHITE  
A method for fabricating bimetallic members of thermoelements from ingots of alloys based on solid solutions of Bi2 Te3 - Sb2 Te3, or Bi2 Te3 - Bi2 Se3 consisting in crushing the ingots to fines,...
3850685 THIN LAYER SEMICONDUCTOR DEVICE  
A thin layer semiconductor device comprising a mixed crystal, InSb(1-x) Asx composed of indium, In, antimony, Sb, and arsenic, As, in a compounding ratio in which x satisfies the following...
3849205 ENHANCEMENT OF SOLID STATE RECRYSTALLIZATION BY INDUCED NUCLEATION  
A method of forming single crystal semiconducting alloys from polycrystalline material is disclosed. One end of a polycrystalline ingot of a ternary alloy such as (Hg, Cd)Te is melted to cause...
3742192 ELECTRICAL HEATING DEVICE AND METHOD  
In accordance with the invention there is provided an electrical heating device comprising a semiconductor body having bidirectional electric current conducting characteristics and having ohmic...
3649192 METHOD OF MANUFACTURING SEMICONDUCTOR COMPOUNDS  
A method of making III-V semiconductor compounds in which a quantity of boron oxide is added to the reactants in a closed vessel to inhibit reactions with the material of the vessel, e.g., silicon...
3649193 METHOD OF FORMING AND REGULARLY GROWING A SEMICONDUCTOR COMPOUND  
A method of producing a III-V semiconductor compound in which one of the elements is placed in a porous container within a reaction vessel and brought into a liquid state while the other element,...
3634143 PREPARATION OF III-V ALLOYS FOR INFRARED DETECTORS  
A single crystal InAs-InSb alloy is prepared on a III-V substrate by flash evaporation of a mixture of granulated InAs and InSb in a vacuum system, subsequent condensation and solidification of...
3622309 HAFNIUM BASE ALLOY (BORON)  
Hafnium tantalum alloy containing about 15 and about 35 weight percent tantalum, between about 0.03 and about 2.0 weight percent boron, and at least one additional alloying agent selected from...
3551116 PROCESS FOR PREPARING LOW RESISTIVITY HIGH PURITY GALLIUM ARSENIDE  
3545967 METAL-SEMICONDUCTOR ALLOYS FOR THIN-FILM RESISTORS  
3508915 METHOD OF FABRICATION OF GERMANIUM-SILICON ALLOY  
3492718 METHOD FOR PREPARING INFRARED QUENCHING PHOTOCONDUCTIVE MATERIAL  
3630906 GALLIUM ARSENIDE  
3725161 OXIDATION OF SEMICONDUCTIVE ALLOYS AND PRODUCTS OBTAINED THEREBY  

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