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7627009 Light-emitting device on n-type InP substrate heavily doped with sulfur  
The present invention provides a structure of a light-emitting device which prevents the inter diffusion of impurities from the high-doped n-type InP substrate to a p-type current blocking layer....
7620086 Semiconductor laser and electronic device  
In one embodiment of the invention, in a semiconductor laser in which a first conductivity type lower cladding layer, an active layer that includes a quantum well layer, and a second conductivity...
7613220 Two-wavelength semiconductor laser device and method for fabricating the same  
A first and second semiconductor laser, which comprise buffer layers, cladding layers, quantum well active layers, and cladding layers integrated on the substrate and have a stripe geometry, are...
7573927 Semiconductor laser with reduced heat loss  
Disclosed is a semiconductor laser. The semiconductor laser includes a semiconductor chip that includes an active layer and emits radiation in a main radiating direction. The active layer is...
7542499 Surface-emission laser diode and surface-emission laser array, optical interconnection system, optical communication system, electrophotographic system, and optical disk system  
A surface-emission laser diode includes an active layer, a pair of cavity spacer layers formed at both sides of the active layer, a current confinement structure defining a current injection region...
7539229 Surface emitting laser device having double channeled structure  
Embodiments provide a vertical external cavity surface emitting laser (VECSEL) that may provide a uniform current density in an active layer using a double current injecting channel. The surface...
7532654 Laser diode  
A laser diode capable of effectively inhibiting effects of return light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer,...
7508573 Optical switch structure  
A structure of an optical switch makes the optical switch capable of receiving broadband signals. And the manufacturing procedure is simplified.
7505503 Vertical cavity surface emitting laser (VCSEL) and related method  
A vertical cavity surface emitting laser (VCSEL) is disclosed that has a relatively low vertical resistance between the Ohmic contact to the upper distributed Bragg reflector (DBR) and the active...
7466738 Surface emitting laser device and production method  
A surface emitting laser device is disclosed that is able to selectively add a sufficiently large loss to a high order transverse mode so as to efficiently suppress a high order transverse mode...
7432118 Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer  
A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion...
7426228 Surface emitting type optical semiconductor device  
It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer...
7376163 Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser  
Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped...
7233610 Nitride based semiconductor laser diode device with a bar mask  
A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding...
7197055 Semiconductor laser  
In a semiconductor laser 1 , a current blocking layer 19 covers a p-type 2 nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at...
7177339 Semiconductor laser  
A semiconductor laser has implantation regions that are effective as mode-selective regions in addition to current diaphragms in the edge region of a mesa. As a result, the inner opening of the...
7127129 Method and apparatus for phase shifting an optical beam in an optical device  
An apparatus and method for high speed phase modulation of optical beam with reduced optical loss. In one embodiment, an apparatus includes a first region of an optical waveguide disposed in...
7088755 Nitride-base semiconductor laser device  
A nitride-based semiconductor laser device capable of attaining stabilization of a laser beam and inhibiting a threshold current and an operating current from increase is provided. This...
7046708 Semiconductor laser device including cladding layer having stripe portion different in conductivity type from adjacent portions  
A semiconductor laser device has a pair of cladding layers with an active layer interposed therebetween. At least one of the cladding layers is of the same composition through the entire region of...
7003013 Distributed feedback semiconductor laser device  
A DFB semiconductor laser device including an n-type semiconductor substrate and a layer structure, overlying the semiconductor substrate, including an active layer, a compound semiconductor layer...
6993056 Hetero laser and light-emitting source of polarized radiation  
A device and method for hetero laser and light-emission of high polarization radiation. Previous light emitting devices suffered from very low degree of the radiation polarization. A hetero laser...
6822993 Index guided vertical cavity surface emitting lasers  
Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index...
6816526 Gain guide implant in oxide vertical cavity surface emitting laser  
A vertical cavity surface emitting laser with a current guide comprised of an ion implant region and an oxide structure. The oxide structure is beneficially formed first, then, a gain guide ion...
6813293 Long wavelength VCSEL with tunnel junction, and implant  
A vertical cavity emitting laser (VCSEL) having a tunnel junction. The junction may be isolated with an implant into a top mirror and past the junction and p-layer. A trench around the VCSEL may...
6813292 Controllable low proton source  
A controllable source of few photons operating at a predetermined wavelength. The source comprises a solid material ( 10 ) having a dilute concentration of elements ( 11 ) implanted therein that...
6169756 Vertical cavity surface-emitting laser with optical guide and current aperture  
A VCSEL comprises separate current and optical guides that provide unique forms of drive current and transverse mode confinement, respectively. In one embodiment, the optical guide comprises an...
6124147 Method for fabricating optoelectronic device in low-temperature deposition and thermal treatment  
The present invention relates to a semiconductor device and, more particularly, to a short-wavelength optoelectronic device and a method for fabricating the same. The optoelectronic device...
6064683 Bandgap isolated light emitter  
A light emitting device having a first mirror, an active layer, a second mirror, and a beryllium implantation resulting in a peripheral boundary of a waveguide through the first and second mirrors,...
6055258 Laser diode with an ion-implanted region  
A semiconductor laser device is disclosed in which the device comprises one or more ion-implanted regions as a means to decrease the occurrence of device failures attributable to dark-line defects....
6028876 High power semiconductor laser device and method for fabricating the same  
The present invention relates to high power semiconductor laser device and method for fabricating the same utilizing ion implanting process, by which a beam steering phenomenon of an optical output...
6005881 Semiconductor laser and method of making the same  
The present invention relates to a semiconductor laser equipped with a novel window structure, thereby realizing higher output, and a method of making the same. The method is a method of making a...
5995531 VCSEL having polarization control and method of making same  
A vertical cavity surface emitting laser with polarization control includes a first stack of distributed Bragg reflectors positioned on a substrate with an active region including a first cladding...
5893722 Fabrication of vertical cavity surface emitting laser with current confinement  
A vertical cavity surface emitting laser having a planar structure, having an implantation or diffusion at the top of the mirror closest to the substrate or at the bottom of the mirror farthest...
5812577 Surface-emitting laser  
A surface-emitting laser contains an optical cavity including a multiple quantum well (MQW) active region providing a source of optical emission in use. Top and bottom mirrors are disposed...
5764669 Semiconductor laser including disordered window regions  
A method for fabricating a semiconductor laser device includes successively epitaxially growing a quantum-well structure active layer and a second conductivity type Al r Ga 1 -r As first upper...
5764674 Current confinement for a vertical cavity surface emitting laser  
A vertical cavity surface emitting laser having a planar structure, having an implantation or diffusion at the top of the mirror closest to the substrate or at the bottom of the mirror farthest...
5737351 Semiconductor laser including ridge structure extending between window regions  
A method of fabricating a semiconductor laser includes successively growing a lower cladding layer of a first conductivity type, an active layer having a superlattice structure, a first upper...
5499260 Semiconductor laser and a method for fabricating the same  
An n-ZnMgSSe lower cladding layer, an n-ZnSSe light guiding layer, an undopad CdZnSe active layer, a p-ZnSSe light guiding layer, a p-ZnMgSSe upper cladding layer, and a p-ZnSe cap layer are...
5341002 Semiconductor light emitting device with ridged contact  
A semiconductor device for amplifying radiation comprises an n-type substrate (1), a p-type layer (3) between which is located an active layer (2). Portions of the p-type layer (3) are removed by...
5316968 Method of making semiconductor surface emitting laser  
The present applicant has discovered that one can make a surface emitting laser with enhanced operating characteristics by etching away the outer reflector stack peripheral to the intended active...
5275969 Semiconductor laser  
A method for diffusing a P type impurity into a semiconductor includes the steps of selectively implanting ions of a first P type impurity into a semiconductor substrate and thermally diffusing a...
5219785 Method of forming current barriers in semiconductor lasers  
A method using implantation to form a semiconductor laser or laser array with current blocking implants. A semiconductor material laser structure including layers of a first conductivity type, an...
5151912 Semiconductor laser  
A semiconductor laser comprises a semiconductor substrate having first and second surfaces opposing to each other, first and second cladding layers formed on the first surface of the substrate, an...
5151914 Process to manufacture laser structures with lateral confinement at very low threshold current and relevant laser devices so obtained  
A process for producing a multilayer device which emits coherent luminous radiation (laser radiation) upon the application of electric power. The device consists of a substrate, a first epitaxial...
5145792 Method of fabricating a semiconductor optical device  
A semiconductor optical device having a quantum well structure which can easily integrate plural optical devices of band gaps which are different from each other, and yet can achieve a high...
5138626 Ridge-waveguide buried-heterostructure laser and method of fabrication  
A laser structure achieves high reliability, good bandwidth and performance characteristics and a fabrication procedure that is compatible with other IC devices by providing an active lasing region...
5115442 Top-emitting surface emitting laser structures  
Top surface emitting, vertical cavity, surface emitting lasers depend upon emission through apertured top surface electrodes. Biasing current, accordingly peripheral to the laser as introduced,...
5048038 Ion-implanted planar-buried-heterostructure diode laser  
A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed...
5045498 Method of fabricating an atomic element doped semiconductor injection laser using ion implantation and epitaxial growth on the implanted surface  
A semiconductor laser diode includes a first buffer layer, a second buffer layer and an active layer sandwiched between the two buffer layers. The active layer contains dopant ions where the dopant...
5043291 Method of manufacturing a broadband high emission power semiconductor laser from a BRS type buried stripe structure, and resulting laser  
The present invention concerns a method for manufacturing a buried stripe semiconductor laser comprising the steps of depositing by epitaxy at least the heterostructure (51, 52, 53, 54) comprising...
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