Matches 1 - 37 out of 37


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8130805 Semiconductor laser apparatus  
A semiconductor laser apparatus includes, on a substrate, a first-conductivity type layer, an active layer, a second-conductivity type layer having a ridge extending along an optical waveguide...
8005124 Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits  
A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device...
7953135 Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency  
A vertical cavity surface emitting laser diode (VCSEL) is disclosed, which reduces the light scattering by the step formed at the interface between the dielectric DBR and the semiconductor that...
7787508 Injector laser  
Injection radiators are used for pumping solid-state and fiber lasers and amplifiers used for producing medical devices, laser production equipment, lasers generating a double-frequency radiation...
7782920 Edge-emitting semiconductor laser with photonic-bandgap structure formed by intermixing  
A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the...
7720124 Semiconductor device and fabrication method thereof  
A semiconductor device includes a first nitride semiconductor layer formed on a substrate and a second nitride semiconductor layer formed on the first nitride semiconductor layer so as to be in...
7653106 Semiconductor laser apparatus and optical amplifier apparatus  
A method of bonding a compound semiconductor on a silicon waveguide is used for attaining a laser above a silicon substrate. While it is essential to attain laser oscillation by injection of a...
7502401 VCSEL system with transverse P/N junction  
The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and...
7374959 Two-wavelength semiconductor laser device and method of manufacturing the same  
A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is...
7376163 Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser  
Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped...
7352788 Nitride semiconductor vertical cavity surface emitting laser  
In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material...
7295586 Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs  
GaAs(1−x)Sbx layers are grown by MOCVD. For lattice matching with InP, x is set to 0.5, while beneficial alternatives include setting x to 0.23, 0.3, and 0.4. During MOVCD, TMGa (or TEGa), TMSb, a...
7218659 High power semiconductor laser diode  
Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical...
7127129 Method and apparatus for phase shifting an optical beam in an optical device  
An apparatus and method for high speed phase modulation of optical beam with reduced optical loss. In one embodiment, an apparatus includes a first region of an optical waveguide disposed in...
7075962 VCSEL having thermal management  
A VCSEL structure having thermal management. The structure may be designed for conveyance of heat from the active layer primarily through one of the mirrors to a material that removes heat...
7058096 Widely wavelength tunable integrated semiconductor device and method for widely wavelength tuning semiconductor devices  
Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are...
7016392 GaAs-based long-wavelength laser incorporating tunnel junction structure  
The light-emitting device comprises a substrate, an active region and a tunnel junction structure. The substrate comprises gallium arsenide. The active region comprises an n-type spacing layer and...
7010183 Surface plasmon devices  
A device including an input port configured to receive an input signal is described. The device also includes an output port and a structure, which structure includes a tunneling junction connected...
5745517 Alternative doping for AlGaInP laser diodes fabricated by impurity-induced layer disordering (IILD)  
The polarity of the semiconductor layers in an AlGaInP semiconductor laser fabricated by impurity induced layer disordering (IILD) is reversed to allow n-doping. Thus, the cladding and confinement...
5239190 Light emitting device and method for manufacturing the same  
A light emitting device comprises a substrate, a reflection mirror formed on the substrate, the reflection mirror comprising alternate lamination of amorphous or polycrystalline layers, having...
5089860 Quantum well device with control of spontaneous photon emission, and method of manufacturing same  
In the present invention, spontaneous photon emission intensity in a semiconductor quantum well is strongly influenced by a highly reflecting interface, with the quantum well to interface spacing...
5073895 Semiconductor Laser  
A transverse junction stripe semiconductor laser includes a double heterostructure of a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first...
5038185 Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors  
This disclosure pertains to compound semiconductor, such as AlGaAs, surface skimming hetero-transverse junction (HTJ) lasers and improved heterojunction bipolar transistors (L-HBTs). These lasers...
5003359 Optoelectronic integrated circuit  
The present invention relates to an optoelectronic integrated circuit having a substantially planar surface and which includes at least one laser diode and at least one field effect transistor. The...
4805179 Transverse junction stripe laser  
A GaAs/AlGaAs-transverse junction stripe (TJS) laser with p-n junction formation by crystal plane dependent doping is described. The laser structure includes a molecular beam epitaxy...
4716125 Method of producing semiconductor laser  
A compound semiconductor laser comprises a semi-insulating substrate, a lower clad layer, an MQW active layer, an upper clad layer, and two electrodes on the top surface thereof. The upper clad...
4503540 Phase-locked semiconductor laser device  
A phase-locked semiconductor laser device comprising a laminated structure in which a plurality of first semiconductor layers having the substantially same composition are stacked in a manner to be...
4399542 Transverse junction stripe laser with distributed Bragg reflectors  
A solid state AlGaAs laser of the transverse junction stripe with distributed Bragg reflector type.
4334311 Transverse junction stripe semiconductor laser device  
A p type GaAlAs layer is disposed on an n type substrate and then n type GaAlAs, GaAs and GaAlAs layers are successively grown on the p type GaAlAs layer. Zn is diffused into predetermined portions...
4318059 Semiconductor laser device having plural active regions  
A monolithically integrated semiconductor laser device capable of producing a plurality of light beams different in wavelength from each other.
4296386 Semiconductor injection laser having a movable laser beam  
A semiconductor injection laser includes two contact regions on two oppositely-located major surfaces of the semiconductor body. One of these contact regions is divided into two sub-contact regions...
4280108 Transverse junction array laser  
A laser array comprised of a plurality of stacked emitting or active regions which are in sufficiently close contact to each other that light from each active region is coupled to the light from...
4183038 Semiconductor laser device  
N type GaAlAs, GaAs and GaAlAs layers are successively grown on a semi-insulating GaAs substrate doped with Cr. Zn is diffused into predetermined portions of those layers to a depth reaching the...
4166278 Semiconductor injection laser device  
N type CaAlAs, GaAs and GaAlAs layers are successively grown on a semi-insulating GaAs substrate doped with Cr to form a semiconductor chip. Predetermined portions of those layers are selectively...
3990096 Semiconductor luminescent device  
The disclosed semiconductor luminescent device comprises a semiconductive body including a first semiconductor layer formed of a first semiconductive material and sandwiched between a second and a...
3961996 Process of producing semiconductor laser device  
N type Ga0.7 Al0.3 As, N type GaAs, N type Ga0.7 Al0.3 As and P type Ga1-0.3 Al0.3 As are epitaxially grown on an N type GaAs substrate in the named order one after another to form superposed...
3893044 Laser device having enclosed laser cavity  
A semiconductor laser device having an enclosed laser cavity is disclosed. The semiconductor laser is of the heterostructure type and embodiments of single and double heterostructures are...
Matches 1 - 37 out of 37