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7391801 |
Electrically pumped Group IV semiconductor micro-ring laser
An electrically pumped semiconductor laser is provided as including a waveguide structure disposed on the substrate. An optical coupling layer is disposed on the substrate and the waveguide. A...
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7386024 |
Quantum cascade laser device
A device includes a multiple quantum well with potential barriers and quantum wells, and an electric field element for applying an electric field thereto. The multiple quantum well includes at...
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7385225 |
Surface emitting type device, and method for manufacturing the same
A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, and an emission section including a second...
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7379485 |
Semiconductor optical device
In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the...
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7376163 |
Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser
Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped...
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7374959 |
Two-wavelength semiconductor laser device and method of manufacturing the same
A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is...
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7369593 |
Semiconductor laser and method for manufacturing the same
The semiconductor laser of the present invention includes a first conductivity-type cladding layer, a second conductivity-type cladding layer having at least one ridge structure extending in the...
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7368754 |
Semiconductor integrated circuit, signal transmitting device, electro-optical device, and electronic apparatus
The invention provides a semiconductor integrated circuit which allows a plurality of devices to be integrated compactly, that is, with high density; a signal transmitting device; an...
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7366216 |
Semiconductor laser element formed on substrate having tilted crystal orientation
A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate...
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7362788 |
Semiconductor laser and fabricating method thereof
The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a...
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7359417 |
Semiconductor laser
The invention has such a double hetero structure ( 11 ) that an active layer ( 3 ) is sandwiched by an n-type clad layer ( 2 ) and a p-type clad layer ( 4 ) on a semiconductor substrate ( 1 ) made...
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7356061 |
Multi-beam semiconductor laser
Provided is a multi-beam semiconductor laser designed to change a pitch between laser beams while eliminating the risks of crosstalk and power-down. Reflective mirrors are disposed at either end...
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7356060 |
Semiconductor laser device and method for fabricating the same
A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW...
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7352788 |
Nitride semiconductor vertical cavity surface emitting laser
In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material...
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7349454 |
Method of monitoring and controlling a laser diode
A method of controlling a laser diode measures an average light output power of the laser diode and compares the average light output power to a desired average light output power within a target...
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7346089 |
Surface-emitting laser diode with tunnel junction and fabrication method thereof
A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the...
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7339967 |
Semiconductor device, semiconductor laser device, manufacturing method for semiconductor device, manufacturing method for semiconductor laser device, optical disk device and optical transmission system
A semiconductor device has a main structure member laminated on a first conductivity-type semiconductor substrate. On the main structure, there is formed a first substructure member, the entirety...
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7339966 |
Semiconductor laser device and method for manufacturing the same
The present invention provides a semiconductor laser device capable of improving reproducibility and electrical properties of the device, and a manufacturing method thereof. The semiconductor laser...
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7333522 |
Polarization control of vertical diode lasers by monolithically integrated surface grating
There is provided a laser. The laser includes a substrate, a first Bragg reflector layer sequence on the substrate, an active layer sequence on the first Bragg reflector layer sequence, a second...
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7310362 |
Semiconductor light emitting device and semiconductor light emitting apparatus
A semiconductor light emitting device comprises: a stacked body of semiconductor including an active layer; a ridge stripe protruding and extending in a first direction on a first major surface of...
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7301979 |
Semiconductor laser
A semiconductor laser device of the present invention includes: a first conductivity type cladding layer; an active layer; and a second conductivity type cladding layer, which are on a substrate....
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7298769 |
Semiconductor laser
A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×10 17 cm −3 or less are stacked on a p-type InP substrate...
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7295589 |
Frequency modulated vertical cavity laser
A frequency modulated (FM) vertical cavity surface emitting laser (VCSEL). The frequency modulated VCSEL includes a mirror region that has an active region. The frequency modulated VCSEL also...
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7295588 |
Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device
The present invention provides a semiconductor laser element, a method of fabrication thereof, and a multi-wavelength monolithic semiconductor laser device that achieve self-sustained pulsation up...
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7294863 |
Micro-lens built-in vertical cavity surface emitting laser
A micro-lens built-in vertical cavity surface emitting laser (VCSEL) includes a substrate and a lower reflector formed on the substrate. An active layer is formed on the lower reflector, generating...
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7292615 |
Semiconductor laser device, method for fabricating the same, and optical disk apparatus
A semiconductor laser device ( 10 ) includes a resonant cavity ( 12 ) in which a quantum well active layer ( 11 ) made up of barrier layers of gallium nitride and well layers of indium gallium...
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7282379 |
Nitride semiconductor, semiconductor device, and method of manufacturing the same
Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride...
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7277461 |
Dielectric VCSEL gain guide
A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an...
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7274721 |
Monolithic multi-wavelength laser device including a plurality of lasing parts and method of fabricating the same
A monolithic multi-wavelength laser device according to the present invention comprises a substrate, a first-wavelength lasing part having a ridge portion and a second-wavelength lasing part having...
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7274720 |
Semiconductor laser element having InGaAs compressive-strained quantum-well active layer
In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper...
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7274719 |
Buried heterostructure quantum cascade laser
A buried heterostructure quantum cascade laser structure uses reverse biased junction to achieve current blocking. Doping and ridge width of the structure may be adjusted to provide effective mode...
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7260130 |
Semiconductor laser device and method of fabricating the same
A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises...
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7257140 |
Semiconductor laser device
A laser device is disclosed which stabilizes impedance at laser drive initiation, and in which an oscillation at low current, a high reaction speed, a low noise, and the like are achieved. A...
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7257138 |
Optoelectronic waveguiding device, structural body including the same, and optical module
The semiconductor optical device is mounted junction down on a mounting plate via the solder metal of the mounting plate. The electrode of the semiconductor optical device facing the mounting plate...
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7227879 |
Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side...
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7221692 |
Semiconductor laser device and its manufacturing method
A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on...
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7221690 |
Semiconductor laser and process for manufacturing the same
This specification relates to a semiconductor laser in which an n-type semiconductor layer ( 13 ), an active layer ( 101 ), and a p-type semiconductor layer ( 24 ) are stacked in this order on a...
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7218660 |
Single-mode vertical cavity surface emitting lasers and methods of making the same
In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a...
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7218659 |
High power semiconductor laser diode
Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical...
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7203409 |
Superluminescent diodes having high output power and reduced internal reflections
Systems and methods according to the present invention address this need and others by providing SLD devices and methods for generating optical energy that reduce internal reflections without the...
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7197057 |
Semiconductor laser device and method of fabricating the same
The width of a current pass region of a semiconductor laser device is narrowed as much as possible, thus implementing a stable single transverse mode. The device is relatively resistant against...
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7197055 |
Semiconductor laser
In a semiconductor laser 1 , a current blocking layer 19 covers a p-type 2 nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at...
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7194013 |
GaN semiconductor laser device, and optical disk information system using the laser device
Two or more of striped structures are formed in one chip, and a relaxation oscillation frequency of the first striped structure is greater than a relaxation oscillation frequency of the second...
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7192201 |
Optical transmitting module having a de-coupling inductor therein
The present invention provides an optical transmitting module or optical transmitting sub-assembly in which an inductor for de-coupling the bias circuit of the semiconductor laser diode is built....
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7187701 |
Ridge waveguide semiconductor laser
A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first...
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7180926 |
Surface emitting semiconductor laser
A surface emitting semiconductor laser is formed from a substrate having a first mirror formed thereon. The first mirror includes semiconductor layers of a first conductivity type. A second mirror...
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7177335 |
Semiconductor laser array with a lattice structure
The present invention relates to laser diodes with single mode emission at high output powers, as well as to structures and processes facilitating simple manufacture of such a devices. The...
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7170918 |
Resonant cavity diode operating at the same wavelength for emission and detection of light
Resonant cavity diode, operating at the same wavelength for emission and detection of light. This diode is particularly applicable to telecommunications and comprises a resonant cavity ( 12 )...
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7167497 |
Nitride semiconductor laser device
A nitride semiconductor laser device of high reliability such that the width of contact between a p-side ohmic electrode and a p-type contact layer is precisely controlled. The device comprises a...
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7167489 |
GaN-based semiconductor laser device
According to an aspect of the present invention, a nitride semiconductor laser device includes a nitride semiconductor active layer, and a stripe-shaped waveguide for guiding light generated in the...
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