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Match Document Document Title
8184671 Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser  
A semiconductor optical element includes an n-type substrate, an n-type clad layer formed upward of the n-type substrate, a p-type clad layer formed upward of the n-type substrate, a guide layer,...
8144743 Nitride based semiconductor device and fabrication method for the same  
A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide...
8139619 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device  
Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for...
8139620 Nitride semiconductor laser device  
The nitride semiconductor laser device includes a substrate, a nitride semiconductor layer having a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer...
8130805 Semiconductor laser apparatus  
A semiconductor laser apparatus includes, on a substrate, a first-conductivity type layer, an active layer, a second-conductivity type layer having a ridge extending along an optical waveguide...
8126024 Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater  
An optical device having a structured active region configured for one or more selected wavelengths of light emissions of 500 nm and greater, but can be others.
8111728 Semiconductor laser and manufacturing process thereof  
A semiconductor laser has a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, an active layer disposed above the lower cladding layer, a first upper cladding...
8111727 High power semiconductor opto-electronic device  
Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such...
8102892 Semiconductor laser light emitting device and method for manufacturing same  
A semiconductor laser device 1 includes infrared and red laser elements 3, 4 provided on a substrate 2, where the infrared element 3 includes a laminate of a first lower clad layer 11, a first...
8098702 Step well quantum cascade structures  
A Quantum Cascade (QC) structure(s) for use in Quantum Cascade Lasers (QCLs) that use step quantum well(s) in which the radiative and LO-phonon transitions are both vertical transitions and within...
8085827 Vertical cavity surface emitting laser and method of manufacturing the same  
A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more...
8073031 Laser diode with improved heat dissipation  
A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat...
8073033 Optical semiconductor device and driving method thereof  
Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60;...
8068529 Surface emitting laser manufacturing method, surface emitting laser array manufacturing method, surface emitting laser, surface emitting laser array, and optical apparatus including surface emitting laser array  
Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode...
8059689 Vertical cavity surface emitting laser, vertical cavity surface emitting laser device, optical transmission device, and information processing apparatus  
A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector that is a first conductive type and formed on the substrate; an active region formed...
8044493 GaAs semiconductor substrate for group III-V compound semiconductor device  
A GaAs semiconductor substrate includes a main surface (10m) having an inclined angle of 6° to 16° with respect to a (100) plane (10a), and a concentration of chlorine atoms on the main surface (...
8039282 Semiconductor optical device and method of fabricating the same  
In a method of fabricating a semiconductor optical device, a semiconductor region is formed by growing an InP lower film, a active region, an InP upper film and a capping film on a substrate...
8040932 Semiconductor laser and method of manufacture  
The present application relates to a semiconductor laser, in particular such a laser which operates with substantially single longitudinal mode emission. The laser comprising a laser cavity, the...
8031755 Surface emitting semiconductor laser and method for fabricating the same  
A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer...
8031752 VCSEL optimized for high speed data  
A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL...
8027370 Semiconductor device  
The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a...
8023543 Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and optical information processing device  
A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first...
8014431 Vertical surface light emitting device with multiple active layers  
A vertical cavity surface light emitting device (VCSLED) with multiple active layers includes at least one optical resonance unit comprising a highly-doped conduction region (1), an insulating...
8009711 Etched-facet ridge lasers with etch-stop  
A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is...
8000365 Semiconductor laser device  
A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes...
7995635 Semiconductor laser  
A wavelength tunable laser according to the present invention includes a first facet and a second facet opposite the first facet, a reflective region provided adjacent to the second facet, and a...
7995634 Nitride semiconductor laser element  
A nitride semiconductor laser element exhibits high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element...
7986721 Semiconductor optical device including a PN junction formed by a second region of a first conductive type semiconductor layer and a second conductive type single semiconductor layer  
In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the...
7983319 Surface-emitting type semiconductor laser that controls polarization directions of laser light and method for manufacturing the same  
To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type...
7983317 MQW laser structure comprising plural MQW regions  
Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers....
7974325 Methods and apparatus for generating terahertz radiation  
Apparatus and methods for generating radiation via difference frequency generation (DFG). In one exemplary implementation, a quantum cascade laser (QCL) has a significant second-order nonlinear...
7970034 Laser diode device  
A laser diode device with which a low voltage is realized is provided. The laser diode device includes: a substrate; a semiconductor laminated structure including a first conductive cladding layer,...
7965751 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Direct modulated modified vertical cavity surface emitting lasers  
A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region...
7965753 Monolithic semiconductor laser  
An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a...
7961996 Coupling device for use in optical waveguides  
An optical waveguide device comprises a plurality of mirrors, wherein at least one mirror comprises a first and second reflective end that reflect and transmit light. The plurality of mirrors...
7957447 VCSEL array device and method for manufacturing the VCSEL array device  
Provided is a VCSEL array device that includes at least a first multilayer reflective film, an active layer, and a second multilayer reflective film, formed on a substrate that extends in a...
7957443 Laser device  
Provided is a long wavelength laser of which the operating point is stabilized and the laser oscillation is stabilized. The long wavelength laser comprises a resistor element provided to a portion...
7957444 Surface-emission laser diode, surface-emission laser diode array, optical scanning apparatus and image forming apparatus  
A surface-emission laser diode of a vertical-cavity surface-emission laser structure includes a substrate and a mesa structure formed on the substrate, the mesa structure including therein a...
7949027 Semiconductor laser device  
A semiconductor laser device includes: an n-type cladding layer; a p-type cladding layer; and an optical waveguide portion disposed between the n-type and p-type cladding layers and including...
7947517 Method of manufacturing semiconductor light-emitting device  
Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a...
7944957 Surface emitting semiconductor laser, method for fabricating surface emitting semiconductor laser, module, light source apparatus, data processing apparatus, light sending apparatus, optical spatial transmission apparatus, and optical spatial transmission system  
A surface emitting semiconductor laser includes a substrate, a lower reflective mirror formed on the substrate, an active layer formed on the lower reflective mirror, an upper reflective mirror...
7936798 Nitride based laser diode and method of manufacturing nitride based laser diode  
The laser diode comprising crystalline substrate (1) where set of subsequent n-type layers, set of optically active layers (5) and set of p-type layers is deposited. The set of n-type layers...
7929587 Semiconductor laser diode element and method of manufacturing the same  
A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge...
7929588 Semiconductor devices and methods for generating light  
Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser...
7924896 Optical semiconductor device  
An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor...
7922336 Light source device for display device, display device, and method for adjusting image of display device  
A light source device for a display device for projecting an image on a screen is provided, the light source device for display device including a light source unit operable to output light; an...
7920613 Optical semiconductor device and method of manufacturing same  
The reliability of a buried hetero-structure semiconductor laser is improved by preventing an increase in oscillation threshold current and a decrease in external differential quantum efficiency in...
7919349 Photonic integration scheme  
Provided is an apparatus and method for manufacture thereof. The apparatus includes a passive optical waveguide structure and a photodiode detector structure. The structures are located on a...
7915625 Semiconductor light emitting device  
Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer,...
7912104 Semiconductor laser diode  
A semiconductor laser diode capable of improving reliability and mass-productivity is disclosed. The semiconductor laser diode comprises a first clad layer; a first optical guide layer disposed on...
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