Matches 1 - 50 out of 97 1 2 >
Match Document Document Title
7627014 Extended wavelength strained layer lasers having nitrogen disposed therein  
Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques,...
7602827 Semiconductor laser and manufacturing process therefor  
There is provided a semiconductor laser comprising an n-InP substrate 1 ; a multilayer film including a strained MQW active layer 6 on the n-InP substrate 1; a p-electrode 18 on the...
7601985 Semiconductor light-emitting device  
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first...
7586967 Semiconductor laser and method of manufacturing the same  
A semiconductor laser manufactured by selective MOVPE growth, in which the lattice relaxation of recombination layers grown on large width portions is suppressed, the leak current is suppressed,...
7583715 Semiconductor conductive layers  
Structures and methods for electronic devices with improved conductive regions are provided. The conductive region may include digital alloy superlattice structures, which allow higher doping...
7577176 Surface emitting laser device  
An optical resonator including a lower multilayer reflector and an upper multilayer reflector is arranged on a substrate. A strained active layer having a multiple quantum well structure formed...
7573074 LED electrode  
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric...
7542201 Semiconductor optical amplification device and optical integrated circuit  
A semiconductor optical amplification device is disclosed that has a gain spectrum of a wide bandwidth. The semiconductor optical amplification device includes an InP substrate and an active layer...
7457338 Quantum well lasers with strained quantum wells and dilute nitride barriers  
In accordance with the present invention, GaAs-based optoelectronic devices have an active region that includes a well layer composed of a compressively-strained semiconductor that is free, or...
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device  
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example,...
7415055 Reliability-enhancing layers for vertical cavity surface emitting lasers  
Vertical cavity surface emitting lasers (VCSELs) and methods of making the same are described. The VCSELs include reliability-enhancing layers that perform specific functions at one or more...
7408968 Semiconductor laser device and method for fabricating the same  
A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first...
7391800 Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method  
In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled...
7378680 Migration enhanced epitaxy fabrication of quantum wells  
Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced...
7362786 Semiconductor laser element having tensile-strained quantum-well active layer  
In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical...
7301978 Semiconductor laser element with optical waveguide layer having increased thickness  
In a semiconductor laser element: a lower cladding layer of In 0.49 (Al x1 Ga 1-x1 ) 0.51 (x2<x1<1) of a first conductive type which lattice-matches with GaAs; a lower optical waveguide layer...
7280576 Type II mid-infrared quantum well laser  
A mid-infrared emitting indirect bandgap quantum well semiconductor laser with an optical waveguide structure having an active waveguide core. The active waveguide core comprises at least one...
7251381 Single-mode optical device  
A single-mode optical device, including a first region, and a second region laterally disposed about the first region, and including an absorbing layer and an isolation layer between the absorbing...
7197056 Semiconductor laser device and optical disc drive  
A 780 nm band semiconductor laser device has an InGaAsP well layer, phosphorous composition of which is 0.51 smaller than 0.55 to prevent spinodal decomposition in growing InGaAsP. A compressive...
7136406 Pseudomorphic layer in tunnel junction VCSEL  
A vertical cavity surface emitting laser (VCSEL) includes an indium-based semiconductor alloy substrate, a first mirror stack over the substrate, an active region having a plurality of quantum...
7113532 Semiconductor laser device  
A semiconductor laser device is one of AlGaInAs semiconductor laser devices, and has a multi-layer structure with a n-GaAs substrate on which a n-Al 0.3 Ga 0.7 As buffer layer, a n-Al 0.47 Ga 0.53...
7095770 Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region  
Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate...
7085299 High power semiconductor laser with a large optical superlattice waveguide  
The invention relates to high power semiconductor diode lasers of the type commonly used in opto-electronics, mostly as so-called pump lasers for fiber amplifiers in the field of optical...
7045812 Technology for increasing bandwidth of semiconductor optical amplifiers/superluminescent diodes using non-identical multiple quantum wells  
The present invention provides a technology for increasing the spectral width of semiconductor optical amplifiers, employing different separate confinement heterostructures (SCH's) so as to form...
7039078 Semiconductor optical modulator and laser with optical modulator  
In a semiconductor optical modulator of this invention, each quantum-well layer and each barrier layer of a quantum-well structure serving as a light absorption layer are respectively made of In...
6853661 Gain-coupled semiconductor laser device lowering blue shift  
A low clad layer made of semiconductor of a first conductivity type is formed on a semiconductor substrate. An active layer is formed on the low clad layer. The active layer is constituted by...
6816524 InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer  
In a semiconductor laser element, a lower cladding layer of a first conductive type, a GaAs first optical waveguide layer of the first conductive type or an undoped type, an InGaAsP or InGaAs...
6795469 Semiconductor laser element  
In a semiconductor laser element, a lower cladding layer of a first conductive type, a lower optical waveguide layer of the first conductive type or an undoped type, a lower GaAs layer, a...
6744797 Semiconductor laser device  
A semiconductor laser device improves reliability during high-power oscillation. An n-type GaAs buffer layer, an n-type In 0.48 Ga 0.52 P lower cladding layer, an n-type or i-type In x1 Ga 1−x1...
6728283 Semiconductor laser and photo module using the same  
A semiconductor laser which has an active layer of a lattice strain of less than 2% of a thickness mean on a GaAs substrate and can be used in a long wavelength band of 1.3 μm band or more and a...
6643306 Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited  
In a semiconductor laser device having a substrate and an active region, the active region includes an active layer between tensile strain optical waveguide layers. The active layer includes at...
6600770 High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode  
In a semiconductor-laser device: an n-type cladding layer, an optical-waveguide layer, an In x3 Ga 1−x3 As 1−y3 P y3 compressive-strain quantum-well active layer (0<x3≦0.4, 0≦y3≦0.1),...
6434178 Semiconductor laser  
A semiconductor laser which can emit at high output, for which the threshold current and efficiency have a low temperature dependence. In GaInAs/GaInAsP semiconductor lasers, the lower the holding...
6330263 Laser diode having separated, highly-strained quantum wells  
A semiconductor laser device with separated, highly-strained quantum wells employs highly-strained ternary and quasi-ternary compounds as material for each quantum well. A first device structure...
6219365 High performance aluminum free active region semiconductor lasers  
The semiconductor laser emitting light in the wavelength range of about 700 nm to 800 nm utilizes an aluminum-free active region layer. An epitaxial structure is grown on a GaAs or AlGaAs substrate...
6194742 Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices  
In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or Al x ...
6154475 Silicon-based strain-symmetrized GE-SI quantum lasers  
A family of lasers is provided which can be readily grown upon silicon wafer platforms, each laser having a highly doped stably strained SiGe or Ge collector layer formed upon a SiGe graded relaxed...
6134251 Surface emission semiconductor laser  
In order to facilitate control of the polarization plane of a laser beam emerging from a surface-emitting-type semiconductor laser in a specific direction and to suppress occurrence of fluctuations...
6028874 Semiconductor laser  
A III-V group semiconductor laser includes a first clad layer, a first optical waveguide layer, a first barrier layer, an active layer, a second barrier layer, a second optical waveguide layer and...
6026107 Semiconductor optical functional device and method of driving the same  
A semiconductor optical functional device is divided into two regions of a first region 1 and a second region 2 adjacent to each other in a longitudinal direction of a semiconductor optical...
6011811 Buried heterostructure with aluminum-free active layer and method of making same  
An epitaxially grown semiconductor heterostructure has an inner region (5) which is substantially laterally confined by confinement regions (9) and has enhanced transverse confinement by enhanced...
5953362 Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same  
A vertical cavity surface emitting laser is formed by eutectically bonding a laser cavity, defined by an active layer disposed between first and second, stacked mirror assemblies, to a host...
5920079 Semiconductive light-emitting device having strained MQW with AlGaInAs barriers  
The present invention provides a semiconductive light-emitting device involving a light-emitting layer of the multilayer strained quantum well structure that has a plurality of quantum well layers...
5903585 Optoelectronic devices  
A single cavity mode optoelectronic device, such as a VCSEL, an RCLED or a DFB laser diode, comprises an etched-pillar or mesa structure including an optically active region and strain-applying...
5838706 Low-strain laser structures with group III nitride active layers  
A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon...
5828684 Dual polarization quantum well laser in the 200 to 600 nanometers range  
A semiconductor laser source using a strained active layer of an indium gallium aluminum nitride (In x Ga 1 -x-y Al y N) quaternary alloy to obtain semiconductor laser sources that emit TE or TM...
5812575 Semiconductor laser diode  
Semiconductor laser diode in which an SCL (Strain Compensated Layer) is formed at an active layer of a 635 nm band semiconductor laser diode for having very low threshold current, is disclosed,...
5671242 Strained quantum well structure  
A semiconductor device includes a substrate having a lattice constant and a stress compensation strained quantum well layer including compressively strained layers having a lattice constant larger...
5666375 Semiconductor quantum well laser having a low threshold current density  
The present invention gives rise to a 1.3 μm tensile-strained quantum well laser having a quantum well active layer which can be structurally specified as In 1 -x Ga x As y P 1 -y with X between...
5661742 Light emitting diode structure  
A light emitting diode comprises a multiple quantum well structure. The light emitting diode has a first conductivity type GaAs substrate, an AlGaInP lower cladding layer of the first conductivity...
Matches 1 - 50 out of 97 1 2 >