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Match Document Document Title
8179943 Semiconductor saturable absorber reflector and method to fabricate thereof  
A design of a semiconductor saturable absorber that offers a convenient and reliable way to control/decrease the recovery time of the absorption. The absorption recovery time is controlled during...
8149888 Single photon source  
An embodiment of the invention relates to a single-photon source for emitting single photons, comprising a cavity having a first mirror and a second mirror and exhibiting a longitudinal resonance...
8144742 Surface emitting laser device  
To provide a surface emitting laser device including a substrate; an optical resonator arranged on the substrate, the optical resonator including a lower multilayer reflector and an upper...
8130801 Method of and photonic device for eliminating or substantially reducing sensitivity to polarization of an injected optical signal and method of manufacturing such photonic device  
An photonic device, comprising one section of a material which is different from the material of another section such that the two sections present different optical birefringent index values. This...
8073032 Surface emitting laser and manufacturing method therefor  
Provided is a surface emitting laser or the like capable of suppressing horizontal misalignment between the surface relief structure and the current confining structure to make higher the precision...
8054862 Optoelectronic devices  
Optoelectronic devices are provided. In one embodiment, a device may include a first conductivity type cladding layer including a first barrier layer, an active layer formed on the first...
8050304 Group-III nitride based laser diode and method for fabricating same  
A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the...
8045595 Self aligned diode fabrication method and self aligned laser diode  
A method for fabricating a laser diode comprising providing a laser diode epitaxial structure and depositing a metal layer stack on the epitaxial structure, the stack comprising a contact and...
8023545 Semiconductor light emitting device  
In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active...
8017973 Nitride semiconductor light-emitting device including a buffer layer on a substrate and method for manufacturing the same  
There are provided a nitride semiconductor light-emitting device and a method for manufacturing the same. The nitride semiconductor light-emitting device includes a buffer layer on a sapphire...
7978739 Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus  
In a surface emitting laser element, on an inclined substrate, a resonator structural body including an active layer, and a lower semiconductor DBR and an upper semiconductor DBR sandwiching the...
7974323 Semiconductor laser  
A semiconductor laser includes: a multiple quantum well active layer that is formed on a semiconductor substrate comprised by GaAs and includes well layers having GaInAsP that has a tensile strain...
7859745 Semiconductor optical amplifying device, semiconductor optical amplifying system and semiconductor optical integrated element  
A polarization-independent SOA having an InP substrate used as a semiconductor substrate, and an active layer taking an MQW structure formed of a barrier layer made of GaInAs with tensile strain...
7856041 Semiconductor having enhanced carbon doping  
A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum...
7848376 Quantum cascade laser structure  
A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and...
7829912 Efficient carrier injection in a semiconductor device  
Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate...
7830939 Low cost InGaAIN based lasers  
A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the...
7813400 Group-III nitride based laser diode and method for fabricating same  
A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the...
7813397 Nitride semiconductor laser device  
A nitride semiconductor laser device includes, on a first principle face of the (0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first conductivity type, an...
7813401 Electrically pumped low-threshold ultra-small photonic crystal lasers  
The invention is a photonic crystal laser including a photonic crystal slab laser cavity including InGaP/InGaAlP crystalline layers, the InGaP/InGaAlP crystalline layers having a relaxed strain at...
7807485 Process for producing surface emitting laser, process for producing surface emitting laser array, and optical apparatus including surface emitting laser array produced by the process  
Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first...
7796661 Semiconductor laser  
A semiconductor laser comprises: a semiconductor substrate and a lower cladding layer, an active layer, and an upper cladding layer on the semiconductor substrate. The layers form a resonator...
7787510 Nitride semiconductor laser chip, nitride semiconductor laser device, and manufacturing method of nitride semiconductor laser chip  
Provided are a nitride semiconductor laser chip with a reliability improved by relieving stress due to strain within the nitride semiconductor laser chip, a manufacturing method thereof, and a...
7787509 Semiconductor laser device  
In a constitution where a first clad layer is formed on a semiconductor substrate, an active layer having the strained multiple quantum well structure is formed on the first clad layer, and a...
7782919 Buried semiconductor laser and method for manufacturing the same  
A buried semiconductor laser exhibiting a reduced dislocation of a contact layer is achieved. A buried semiconductor laser, comprising: an n-type indium phosphide (InP) substrate; an active layer...
7769066 Laser diode and method for fabricating same  
A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice...
7711024 Monolithic semiconductor laser  
There is disclosed a monolithic semiconductor laser which is provided with an AlGaAs based semiconductor laser element (10a) and an InGaAlP based semiconductor laser element (10b) formed on a...
7684458 Surface-emission laser diode and fabrication process thereof  
A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a...
7684454 High power vertical cavity surface emitting laser  
An improved VECSEL device is provided in which the gain of each of the quantum well layers can be increased in a periodic gain structure. A vertical external cavity surface emitting laser (VECSEL)...
7684455 Oscillator and imaging apparatus utilizing resonant tunneling diode structure  
An oscillator including a substrate and a resonant tunneling diode including a gain medium provided on the substrate. The gain medium includes at least two quantum well layers and plural barrier...
7668219 Surface emitting semiconductor device  
A surface emitting semiconductor device comprises: a semiconductor region including an active layer; a first DBR having first layers and second layers; and a second DBR. The first and second layers...
7663138 Nitride semiconductor light emitting element  
A n-type layer, a multiquantum well active layer comprising a plurality of pairs of an InGaN well layer/InGaN barrier layer, and a p-type layer are laminated on a substrate to provide a nitride...
7656920 Semiconductor laser device  
A semiconductor laser device producing light having a TE-polarized component suitable for practical use (i.e., light having TE-polarized light intensity sufficiently high for practical use). A...
7653104 Semiconductor laser device  
A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer...
7642565 Radiation-emitting semiconductor component based on gallium nitride, and method for fabricating the semiconductor component  
A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of...
7627014 Extended wavelength strained layer lasers having nitrogen disposed therein  
Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques,...
7602827 Semiconductor laser and manufacturing process therefor  
There is provided a semiconductor laser comprising an n-InP substrate 1; a multilayer film including a strained MQW active layer 6 on the n-InP substrate 1; a p-electrode 18 on the multilayer...
7601985 Semiconductor light-emitting device  
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first...
7586967 Semiconductor laser and method of manufacturing the same  
A semiconductor laser manufactured by selective MOVPE growth, in which the lattice relaxation of recombination layers grown on large width portions is suppressed, the leak current is suppressed,...
7583715 Semiconductor conductive layers  
Structures and methods for electronic devices with improved conductive regions are provided. The conductive region may include digital alloy superlattice structures, which allow higher doping...
7577176 Surface emitting laser device  
An optical resonator including a lower multilayer reflector and an upper multilayer reflector is arranged on a substrate. A strained active layer having a multiple quantum well structure formed...
7573074 LED electrode  
An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric...
7542201 Semiconductor optical amplification device and optical integrated circuit  
A semiconductor optical amplification device is disclosed that has a gain spectrum of a wide bandwidth. The semiconductor optical amplification device includes an InP substrate and an active layer...
7457338 Quantum well lasers with strained quantum wells and dilute nitride barriers  
In accordance with the present invention, GaAs-based optoelectronic devices have an active region that includes a well layer composed of a compressively-strained semiconductor that is free, or...
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device  
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example,...
7415055 Reliability-enhancing layers for vertical cavity surface emitting lasers  
Vertical cavity surface emitting lasers (VCSELs) and methods of making the same are described. The VCSELs include reliability-enhancing layers that perform specific functions at one or more...
7408968 Semiconductor laser device and method for fabricating the same  
A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first...
7391800 Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method  
In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled...
7378680 Migration enhanced epitaxy fabrication of quantum wells  
Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced...
7362786 Semiconductor laser element having tensile-strained quantum-well active layer  
In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical...
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