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7391801 Electrically pumped Group IV semiconductor micro-ring laser  
An electrically pumped semiconductor laser is provided as including a waveguide structure disposed on the substrate. An optical coupling layer is disposed on the substrate and the waveguide. A...
7391800 Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method  
In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled...
7386024 Quantum cascade laser device  
A device includes a multiple quantum well with potential barriers and quantum wells, and an electric field element for applying an electric field thereto. The multiple quantum well includes at...
7379485 Semiconductor optical device  
In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the...
7378680 Migration enhanced epitaxy fabrication of quantum wells  
Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced...
7376163 Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser  
Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped...
7369594 Semiconductor laser  
A semiconductor laser of effective index type which has a lower cladding layer, an active layer, and an upper cladding layer, which are sequentially arranged upward, with said upper cladding layer...
7369593 Semiconductor laser and method for manufacturing the same  
The semiconductor laser of the present invention includes a first conductivity-type cladding layer, a second conductivity-type cladding layer having at least one ridge structure extending in the...
7362788 Semiconductor laser and fabricating method thereof  
The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a...
7359418 Quantum cascade laser  
A quantum cascade laser 1 , which generates infrared light or other light of a predetermined wavelength by making use of intersubband transitions in a quantum well structure, is arranged by...
7359417 Semiconductor laser  
The invention has such a double hetero structure ( 11 ) that an active layer ( 3 ) is sandwiched by an n-type clad layer ( 2 ) and a p-type clad layer ( 4 ) on a semiconductor substrate ( 1 ) made...
7356063 Semiconductor surface emitting device  
This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block...
7356061 Multi-beam semiconductor laser  
Provided is a multi-beam semiconductor laser designed to change a pitch between laser beams while eliminating the risks of crosstalk and power-down. Reflective mirrors are disposed at either end...
7349456 Gain-coupled distributed quantum cascade laser  
Purely gain-coupled diffraction gratings may be realized for use in QCLs and other edge emitting lasers that lack a typical p-n junction. The periodic, typically heavily n-doped regions of doped...
7339967 Semiconductor device, semiconductor laser device, manufacturing method for semiconductor device, manufacturing method for semiconductor laser device, optical disk device and optical transmission system  
A semiconductor device has a main structure member laminated on a first conductivity-type semiconductor substrate. On the main structure, there is formed a first substructure member, the entirety...
7339966 Semiconductor laser device and method for manufacturing the same  
The present invention provides a semiconductor laser device capable of improving reproducibility and electrical properties of the device, and a manufacturing method thereof. The semiconductor laser...
7339965 Optoelectronic device based on an antiwaveguiding cavity  
A semiconductor optoelectronic device includes at least one cavity and one multilayered interference reflector. The cavity is designed preferably to possess properties of an antiwaveguiding cavity,...
7336688 Surface emitting semiconductor laser and method of manufacturing the same  
A surface emitting semiconductor laser includes a substrate, a first semiconductor multiple layer reflecting mirror formed on the substrate, the reflecting mirror having a semiconductor layer...
7333522 Polarization control of vertical diode lasers by monolithically integrated surface grating  
There is provided a laser. The laser includes a substrate, a first Bragg reflector layer sequence on the substrate, an active layer sequence on the first Bragg reflector layer sequence, a second...
7310362 Semiconductor light emitting device and semiconductor light emitting apparatus  
A semiconductor light emitting device comprises: a stacked body of semiconductor including an active layer; a ridge stripe protruding and extending in a first direction on a first major surface of...
7310358 Semiconductor lasers  
Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the...
7301978 Semiconductor laser element with optical waveguide layer having increased thickness  
In a semiconductor laser element: a lower cladding layer of In 0.49 (Al x1 Ga 1-x1 ) 0.51 (x2<x1<1) of a first conductive type which lattice-matches with GaAs; a lower optical waveguide layer...
7301977 Tuneable unipolar lasers  
A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a...
7298769 Semiconductor laser  
A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×10 17 cm −3 or less are stacked on a p-type InP substrate...
7295587 Semiconductor laser having optical guide layer doped for decreasing resistance  
In a semiconductor laser element: a lower cladding layer of a first conductivity type, a quantum-well active layer, an upper cladding layer of a second conductivity type, a contact layer of the...
7295586 Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs  
GaAs (1−x) Sb x layers are grown by MOCVD. For lattice matching with InP, x is set to 0.5, while beneficial alternatives include setting x to 0.23, 0.3, and 0.4. During MOVCD, TMGa (or TEGa),...
7292615 Semiconductor laser device, method for fabricating the same, and optical disk apparatus  
A semiconductor laser device ( 10 ) includes a resonant cavity ( 12 ) in which a quantum well active layer ( 11 ) made up of barrier layers of gallium nitride and well layers of indium gallium...
7289546 Semiconductor laser having an improved stacked structure  
An n-type first cladding layer, a first guide layer, a first enhancing layer, an active layer, a second enhancing layer, a second guide layer, and a p-type second cladding layer are sequentially...
7288783 Optical semiconductor device and method for fabricating the same  
Quantum dots are formed on a plurality of surfaces whose normal direction are different from each other. The quantum dots are formed on the surfaces normal to each other, whereby the polarization...
7286585 Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region  
A laser system having migration enhanced epitaxy grown substantially flat layers proximate to quantum wells of an active region. The flat layers may be grown at low temperature. This growth may...
7286573 Conversion of type of quantum well structure  
A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material,...
7285799 Semiconductor light emitting devices including in-plane light emitting layers  
A semiconductor light emitting device includes a planar light emitting layer with a wurtzite crystal structure having a <0001> axis roughly parallel to the plane of the layer, referred to as...
7282732 Quantum dot structures  
Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can...
7277465 Semiconductor laser  
In a refractive index coupling distributed semiconductor laser having a Λ/2-phase-shift distributed feedback structure with a diffraction grating having a refractive index coupling property on an...
7277461 Dielectric VCSEL gain guide  
A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an...
7274719 Buried heterostructure quantum cascade laser  
A buried heterostructure quantum cascade laser structure uses reverse biased junction to achieve current blocking. Doping and ridge width of the structure may be adjusted to provide effective mode...
7269196 Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof  
The method comprises forming barrier layers of Al x Ga 1-x As, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and...
7265008 Method of IC production using corrugated substrate  
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor...
7263115 Semiconductor device and a method of manufacturing a semiconductor device  
A semiconductor device comprises an active region ( 4 ), a cladding layer ( 5,7 ), and a saturable absorbing layer ( 6 ) disposed within the cladding layer. The saturable absorbing layer comprises...
7263114 Semiconductor laser diode  
A semiconductor laser diode is provided, including: an active layer; an upper clad layer formed above the active layer; a first lower clad layer formed below the active layer; a second lower clad...
7260129 Multipartite laser  
A device for emission of laser radiation includes at least one semiconductor laser having a resonator and a pumped active zone disposed within the resonator. The zone is subdivided into at least...
7257139 Semiconductor laser device and optical pickup apparatus using the same  
A semiconductor laser device has a striped structure for injecting carriers and includes a first electrically-conductive cladding layer, an active layer, and a second electrically-conductive...
7227879 Nitride semiconductor laser device having current blocking layer and method of manufacturing the same  
A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side...
7221692 Semiconductor laser device and its manufacturing method  
A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on...
7218659 High power semiconductor laser diode  
Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical...
7218658 Semiconductor laser device  
A semiconductor laser device according to the present invention comprises an optical waveguide laminated structure having: a first first-cladding layer made up of a p-InP layer; a double...
7215691 Semiconductor laser device and method for fabricating the same  
A semiconductor laser device has an active layer, a first cladding layer formed on the active layer, and a second cladding layer formed on the first cladding layer. The first cladding layer is...
7203215 Semiconductor laser device, semiconductor laser module, and optical fiber amplifier  
A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive...
7197055 Semiconductor laser  
In a semiconductor laser 1 , a current blocking layer 19 covers a p-type 2 nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at...
7187701 Ridge waveguide semiconductor laser  
A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first...
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