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8183649 Buried aperture nitride light-emitting device  
A buried aperture in a nitride light emitting device is described. The aperture is formed in an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes...
8184671 Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser  
A semiconductor optical element includes an n-type substrate, an n-type clad layer formed upward of the n-type substrate, a p-type clad layer formed upward of the n-type substrate, a guide layer,...
8179941 Laser diode and method of manufacturing the same  
A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement...
8179939 Light emitting and lasing semiconductor devices and methods  
A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter...
8175129 Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove  
A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface;...
8175128 Semiconductor laser element and semiconductor laser device  
A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer,...
8160116 Semiconductor laser and method for manufacturing the same  
The present invention provides a semiconductor laser including a first conductive type of a lower clad layer 12, an active layer 14 provided on the lower clad layer 12, the active layer 14...
8144741 Semiconductor laser  
A semiconductor laser comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and...
8144742 Surface emitting laser device  
To provide a surface emitting laser device including a substrate; an optical resonator arranged on the substrate, the optical resonator including a lower multilayer reflector and an upper...
8139619 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device  
Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for...
8130801 Method of and photonic device for eliminating or substantially reducing sensitivity to polarization of an injected optical signal and method of manufacturing such photonic device  
An photonic device, comprising one section of a material which is different from the material of another section such that the two sections present different optical birefringent index values. This...
8126024 Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater  
An optical device having a structured active region configured for one or more selected wavelengths of light emissions of 500 nm and greater, but can be others.
8124432 Nitride semiconductor optical element and manufacturing method thereof  
In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In...
8121165 MQW laser structure comprising plural MQW regions  
Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers....
8121164 Quantum cascade laser: bias-neutral design  
A quantum cascade laser (QCL) having a bias-neutral design and a semiconductor with multiple layers of AlxIn1-xAs/InyGa1-yAs. The first active region barrier has a thickness of less than fourteen...
8111726 Semiconductor laser device  
A semiconductor laser device includes: an n-type cladding layer, a p-type cladding layer, an active layer located between the n-type cladding layer and the p-type cladding layer, an n-side guiding...
8107508 External cavity laser light source  
Provided is an external cavity laser light source. The light source includes a substrate, an optical waveguide, and a current blocking layer. The optical waveguide includes a passive waveguide...
8102892 Semiconductor laser light emitting device and method for manufacturing same  
A semiconductor laser device 1 includes infrared and red laser elements 3, 4 provided on a substrate 2, where the infrared element 3 includes a laminate of a first lower clad layer 11, a first...
8102890 Semiconductor light emitting device  
A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity...
8094696 Semiconductor laser device  
A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ:in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AIN) in contact with an f...
8089997 Laser device  
The laser device has a gain medium, first and second clads sandwiching the gain medium in the thickness direction, and a cavity structure for resonating the electromagnetic wave generated in the...
8085826 Nitride semiconductor laser device  
A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride...
8085827 Vertical cavity surface emitting laser and method of manufacturing the same  
A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more...
8080818 Light emitting device  
A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including...
8077752 Vertical cavity surface emitting laser  
A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL...
8073032 Surface emitting laser and manufacturing method therefor  
Provided is a surface emitting laser or the like capable of suppressing horizontal misalignment between the surface relief structure and the current confining structure to make higher the precision...
8068528 Quantum cascade laser  
A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16...
8064493 Surface emitting photonic device  
A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active...
8054862 Optoelectronic devices  
Optoelectronic devices are provided. In one embodiment, a device may include a first conductivity type cladding layer including a first barrier layer, an active layer formed on the first...
8044493 GaAs semiconductor substrate for group III-V compound semiconductor device  
A GaAs semiconductor substrate includes a main surface (10m) having an inclined angle of 6° to 16° with respect to a (100) plane (10a), and a concentration of chlorine atoms on the main surface (...
8045595 Self aligned diode fabrication method and self aligned laser diode  
A method for fabricating a laser diode comprising providing a laser diode epitaxial structure and depositing a metal layer stack on the epitaxial structure, the stack comprising a contact and...
8039282 Semiconductor optical device and method of fabricating the same  
In a method of fabricating a semiconductor optical device, a semiconductor region is formed by growing an InP lower film, a active region, an InP upper film and a capping film on a substrate...
8031752 VCSEL optimized for high speed data  
A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL...
8023545 Semiconductor light emitting device  
In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active...
8023544 Semiconductor light emitting devices with non-epitaxial upper cladding  
The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from...
8023546 Semiconductor laser with integrated contact and waveguide  
A semiconductor light-emitting device has, in place of a traditional separate cladding layer and contact structure, a non-epitaxial contact and waveguide layer. The non-epitaxial contact and...
8014431 Vertical surface light emitting device with multiple active layers  
A vertical cavity surface light emitting device (VCSLED) with multiple active layers includes at least one optical resonance unit comprising a highly-doped conduction region (1), an insulating...
8009711 Etched-facet ridge lasers with etch-stop  
A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is...
8005124 Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits  
A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device...
8000369 Surface emitting laser array, production process thereof, and image forming apparatus having surface emitting laser array  
A surface emitting laser array comprising a plurality of surface emitting laser devices each having a semiconductor layer containing a first reflection mirror, an active layer, a current confined...
8000367 High-efficiency unipolar quantum cascade laser  
The present invention pertains to a unipolar quantum cascade laser consisting of several semiconductor multilayer structures (C) that are layered behind one another between two electrodes in a...
8000366 Laser diode with high indium active layer and lattice matched cladding layer  
A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium...
8000365 Semiconductor laser device  
A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes...
7995634 Nitride semiconductor laser element  
A nitride semiconductor laser element exhibits high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element...
7986721 Semiconductor optical device including a PN junction formed by a second region of a first conductive type semiconductor layer and a second conductive type single semiconductor layer  
In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the...
7983317 MQW laser structure comprising plural MQW regions  
Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers....
7978739 Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus  
In a surface emitting laser element, on an inclined substrate, a resonator structural body including an active layer, and a lower semiconductor DBR and an upper semiconductor DBR sandwiching the...
7974325 Methods and apparatus for generating terahertz radiation  
Apparatus and methods for generating radiation via difference frequency generation (DFG). In one exemplary implementation, a quantum cascade laser (QCL) has a significant second-order nonlinear...
7974323 Semiconductor laser  
A semiconductor laser includes: a multiple quantum well active layer that is formed on a semiconductor substrate comprised by GaAs and includes well layers having GaInAsP that has a tensile strain...
7974328 Surface-emission type semiconductor laser  
The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the...
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