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9042418 III-V photonic crystal microlaser bonded on silicon-on-insulator  
Novel methods and systems for miniaturized lasers are described. A photonic crystal is bonded to a silicon-on-insulator wafer. The photonic crystal includes air-holes and can include a waveguide...
9042417 Photonic device structure and fabrication method thereof  
Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an...
9042416 High-power low-loss GRINSCH laser  
A GRINSCH laser having an asymmetric configuration wherein the optical confinement is weighted more to the n-doped multilayer section than to the p-doped multilayer section. The GRINSCH laser can...
9036672 Tensile strained semiconductor photon emission and detection devices and integrated photonics system  
Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed...
RE45517 Vertical geometry InGaN LED  
A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting...
9036671 Method for fabricating group-III nitride semiconductor laser device  
A method for fabricating a group-III nitride semiconductor laser device stably supplies laser cavity mirrors having a low lasing threshold current through the use of a semi-polar plane. A blade 5g...
9031111 Optical semiconductor device and method of manufacturing optical semiconductor device  
A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type...
9025630 On-chip electrically pumped optical parametric source  
A tuneable laser source includes a first confinement layer forming a Bragg reflector for a pump wave; an active layer made of non-linear semiconducting material, the refraction index of the active...
9025631 Light-emitting device and method of manufacturing the same  
Provided is a high-output light-emitting device capable of emitting a light beam in a single mode. The light-emitting device includes a laminate structure body configured by laminating, in order,...
9008140 Semiconductor laser  
A semiconductor laser includes: a p-type semiconductor substrate; a ridge having an active layer and cladding layers on the semiconductor substrate; a current blocking layer embedding side...
9008983 Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide  
Provided are a waveguide capable of suppressing strain and defect caused in a semiconductor in an initial stage or during operation due to a manufacturing process or the like to realize...
9008141 Semiconductor laser device  
A semiconductor laser device includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer, a first light guide layer, an active layer, a second light guide...
8993999 Semiconductor light emitting device and method for manufacturing same  
According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device...
8995492 Semiconductor laser element  
To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element...
8989228 Laser diode device, method of driving the same, and laser diode apparatus  
An ultrashort pulse and ultrahigh power laser diode device capable of outputting pulse laser light having higher peak power with a simple composition and a simple structure is provided. The laser...
8989231 Surface emitting laser device, surface emitting laser array, optical scanning device, image forming apparatus, and manufacturing method of surface emitting laser device  
A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are...
8981340 Nitride semiconductor device and production method thereof  
A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the...
8982921 Semiconductor lasers and etched-facet integrated devices having H-shaped windows  
An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second...
8976831 Edge-emitting semiconductor laser  
An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1)...
8976830 Lasers with GaPSb barrier layers  
A laser active region can include a quantum well barrier having GaPSb. The active region can include one or more quantum wells, and a quantum well barrier having GaPSb bounding each side of each...
8971367 Surface-emitting laser, surface-emitting laser array, method of manufacturing surface-emitting laser, method of manufacturing surface-emitting laser array and optical apparatus equipped with surface-emitting laser array  
A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of...
8971369 Quantum cascade laser structure  
A quantum cascade laser structure having a plurality of cascades each of which comprises a number of alternately arranged quantum wells and barriers of different thicknesses and heights, wherein...
8964807 Magnesium based gettering regions for gallium and nitrogen containing laser diode devices  
In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region,...
8964804 Variable bandgap modulator for a modulated laser system  
A modulated laser system generally includes a light emission region, a modulation region having a plurality of semiconductive layers, at least one of which includes a quantum well layer having a...
8958451 Semiconductor laser and optical semiconductor device  
In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third...
8958450 Quantum cascade laser  
A quantum cascade laser 1 includes a semiconductor substrate, an active layer 15 that is disposed on the semiconductor substrate and has a cascade structure in which a unit layered structure 16...
8948226 Semiconductor device and method for producing light and laser emission  
A method for producing light emission, including the following steps: providing a transistor structure that includes a semiconductor base region disposed between a semiconductor emitter region and...
8937763 Vertical microcavity with curved surface defects  
A vertical microcavity having a layer structure perpendicular to a vertical axis z, includes a first reflector and a second reflector, each comprising one or more material layers; a confinement...
8937981 Direct modulated laser  
A laser system can include an electrode to transmit electrical carriers into an active region in response to first electrical stimulation. The laser system can also include another electrode to...
8937982 Surface-emitting laser element, surface-emitting laser array, optical scanning apparatus, image forming apparatus, and method of manufacturing surface-emitting laser element  
A method of manufacturing a surface-emitting laser element having a light-emitting mesa structure with an emitting area including a high-reflectance portion and a low-reflectance portion includes...
8937980 Distributed feedback-laser diodes  
Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on...
8934512 Edge-emitting etched-facet lasers  
A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the...
8929416 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device  
A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and...
8929417 Semiconductor interband lasers and method of forming  
A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer...
8929418 Semiconductor laser  
A semiconductor laser is provided with one or more rear ports and one front port and with a multi-mode interference optical waveguide that has an active layer (light emitting layer) in all regions...
8923355 Semiconductor laser device and manufacturing method thereof  
A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the...
8916849 Optoelectronic semiconductor chip  
An optoelectronic semiconductor chip, the latter includes a carrier and a semiconductor layer sequence grown on the carrier. The semiconductor layer sequence is based on a nitride-compound...
8908733 Optoelectronic semiconductor chip  
In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one...
8908734 Directly modulated laser for PON applications  
In an embodiment, a distributed Bragg reflector (DBR) laser includes a gain section and a passive section. The gain section includes an active region, an upper separate confinement heterostructure...
8902945 Semiconductor laser gain device with mode filter  
A semiconductor gain device comprising a substrate; an optical waveguide layer extending from a first end of the substrate to a second end of the substrate opposite to the first end, the optical...
8902946 Photonic crystal surface-emitting lasers enabled by an accidental Dirac point  
A photonic-crystal surface-emitting laser (PCSEL) includes a gain medium electromagnetically coupled to a photonic crystal whose energy band structure exhibits a Dirac cone of linear dispersion at...
8897329 Group III nitride-based green-laser diodes and waveguide structures thereof  
Group III nitride-based laser diodes comprise an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide...
8891569 VCSEL array with increased efficiency  
The present invention relates to a VCSEL array comprising several VCSELs arranged side by side on a common substrate (1). Each VCSEL is formed of at least a top mirror (5, 14), an active region...
8891568 Laser diode device and method of manufacturing laser diode device  
A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer...
8891570 Optical semiconductor device  
In a BH laser which uses InGaAlAs-MQW in an active layer, Al-based semiconductor multi-layer films including an InP buffer layer and an InGaAlAs-MQW layer, and an InGaAsP etching stop layer are...
8879595 Quantum cascade structures on metamorphic buffer layer structures  
Semiconductor structures, quantum cascade structures and lasers including the structures are provided. The semiconductor structures include a substrate, a metamorphic buffer layer structure over...
8879597 Methods for producing optoelectronic semiconductor components, and optoelectronic semiconductor lasers  
A method for producing an optoelectronic semiconductor component includes: epitaxially growing a semiconductor layer sequence including an active layer on a growth substrate,shaping a front facet...
8866041 Apparatus and method of manufacturing laser diode unit utilizing submount bar  
A manufacturing method of laser diode unit of the present invention includes steps: placing a laser diode on top of a solder member formed on a mounting surface of a submount, applying a pressing...
8867581 Semiconductor laser and method of manufacturing the same  
A semiconductor laser includes: a semiconductor layer including an active layer and a ridge portion, the ridge portion facing a current injection region of the active layer; and an embedded film...
8855162 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Surface emitting laser device, surface emitting laser array, optical scanning device, image forming apparatus, and manufacturing method of surface emitting laser device
 
A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are...