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6931042 |
Long wavelength vertical cavity surface emitting laser
Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The...
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6922424 |
Laser device
A laser device has a laser diode with an optical resonator. The resonator has an exit side for emitting light into an optical system. A monitor diode is provided and has a light-sensitive face for...
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6922496 |
Integrated VCSELs on ASIC module using flexible electrical connections
A circuit module including at least one Application Specific Integrated Circuit (ASIC) and a plurality of Vertical Cavity Surface-Emitting Laser (VCSEL) array modules is built using a standard...
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6922418 |
Wavelength-variable light source apparatus
A wavelength-variable light source apparatus having a wavelength calibration function of emitted light therefrom. The apparatus includes a semiconductor laser light source section, an external...
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6922427 |
Quantum cascade laser
Quantum cascade laser especially comprising a gain region ( 14 ) formed from several layers ( 20 ) which each comprise:
alternating strata of a first type ( 26 ) each defining a quantum...
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6922425 |
Semiconductor laser device and optical pickup device
In a semiconductor laser device, a plane of polarization of a laser beam emitted by a semiconductor laser ( 4 ) is inclined from a substrate surface ( 4 A), allowing the semiconductor laser ( 4 )...
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6920168 |
Optical assembly
The invention, in accordance with one aspect, is an optical assembly including a substrate, a light emitting device mounted over a major surface of the substrate and having a back face, at least...
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6920167 |
Semiconductor laser device and method for fabricating thereof
A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper...
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6920166 |
Thin film deposition method of nitride semiconductor and nitride semiconductor light emitting device
A masking material 13 , which includes stripe-like openings 12 parallel to the [1-100] direction of a nitride semiconductor thin film, is formed on a substrate. Nitride semiconductor thin films ...
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6917634 |
Diode-pumped solid-state laser oscillator
A diode-pumped solid-state laser oscillator optically pumps a laser medium. The oscillator has at least one pumping light source that emits light in a predetermined wavelength band, and a laser...
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6914922 |
Nitride based semiconductor light emitting device and nitride based semiconductor laser device
A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting...
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6912237 |
Semiconductor laser module and semiconductor laser device having light feedback function
A semiconductor laser module is provided for emitting pumping laser light which excels in temporal stability. The semiconductor laser module comprises a semiconductor laser device which has a...
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6912236 |
Semiconductor laser device having lower threshold current
A semiconductor laser device includes a QW active layer structure including a Ga x In 1−x As 1−y Sb y layer wherein 0.3≦1−x and 0.003≦y≦0.008, or a QW active layer structure including...
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6909734 |
High-power, manufacturable sampled grating distributed Bragg reflector lasers
A tunable laser is disclosed including a gain section for creating a light beam over a bandwidth, a phase section for controlling the light beam around a center frequency of the bandwidth, a...
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6907056 |
Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency
Semiconductor light emitting sources are formed to have a substrate, an active region layer having one or more quantum wells, optical confinement layers surrounding the active region layer, and a...
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6904065 |
Method and apparatus for compensating losses in a tunable laser filter
An approach for compensating for losses in a tunable laser filter comprising includes providing a tunable waveguide material and an amplifying material that have different compositions. The tuning...
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6904071 |
Semiconductor laser device and method of fabricating the same
An n-contact layer, an n-cladding layer, an MQW active layer, and a p-first cladding layer are formed in this order on a sapphire substrate. An n-current blocking layer having a striped opening is...
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6901096 |
Material system for Bragg reflectors in long wavelength VCSELs
Distributed Bragg reflectors (DBRs), and VCSELs that use such DBRs, comprised of AlP layers on InP substrates. When grown on an InP substrate, if the critical layer thickness (t crt ) of AlP is...
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6901100 |
Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection
In a semiconductor laser device: a p-type Al z Ga 1-z As cladding layer is formed above an active layer, where z≧0.3; a p-type GaAs contact layer is formed on the cladding layer except for at...
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6901095 |
Semiconductor laser module, optical measuring method and optical measuring apparatus
A package accommodates an LD device for emitting laser light with the center wavelength of which is in a range of 1300 to 1440 nm and airtight seals a light path extending from the LD device to an...
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6898225 |
Coupled cavity high power semiconductor laser
An active gain region sandwiched between a 100% reflective bottom Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on a lower surface of a supporting substrate, to...
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6888863 |
System comprising optical semiconductor waveguide device
An improved optical communication system is provided, the system particularly suited for so-called short-haul applications, e.g., applications involving transmission over distances less than 100...
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6888864 |
SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, OPTICAL TRANSMISSION SYSTEM, ELECTRONIC DEVICE, CONTROL DEVICE, CONNECTOR, COMMUNICATION DEVICE, AND OPTICAL TRANSMISSION METHOD AND DATA TRANSMISSION AND RECEPTION METHOD
A semiconductor laser device includes a semiconductor laser chip, and a molded resin having a light diffusion capability. The semiconductor laser chip is covered with the molded resin.
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6888865 |
Semiconductor laser apparatus and method of producing the same
In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature...
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6882669 |
High-power surface emitting laser and fabrication methods thereof
High powered lasers of substantially any wavelength produced by certain processes including the process of providing a structure comprising a substrate with an epi structure thereon comprising a...
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6882668 |
Semiconductor laser diode chip and its positioning and mouting method
Positioning marks 15, 16 are formed at predetermined positions with respect to an active layer 11 buried in an LD chip body 10. In an Au metallized layer 12 for solder joining on the active...
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6876679 |
Systems and methods of operating an incoherently beam combined laser
In embodiments, the present invention is directed to systems and methods for operating an incoherently beam combined (IBC) laser. The IBC laser may comprise an integrated set of emitters or a set...
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6876682 |
Light generating module
A light generating module 1 comprises a housing 2, a semiconductor light-emitting device 4, a driving element 6, and a monitoring light-receiving device 8. The monitoring light-receiving...
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6876685 |
Semiconductor laser device
A laser device having at least a semiconductor laser element, a window allowing light emitted from the emission end face of the semiconductor laser element to pass therethrough, a photodetector...
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6870868 |
Organic laser having improved linearity
An organic vertical cavity laser device includes a substrate; a bottom dielectric stack reflective to light over a predetermined range of wavelengths and being disposed over the substrate, and an...
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6870178 |
Semiconductor laser with reduced temperature sensitivity
A quantum dot (QD) laser having greatly reduced temperature sensitivity employs resonant tunnel-injection of carriers into the QDs from a pair of quantum wells (QWs). The carriers are injected...
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6868105 |
Semiconductor laser device, method of fabricating the same, and optical pickup employing the same
A semiconductor laser device that is suitable for mass production, that permits an improved wire layout, and that permits miniaturization includes leads disposed through each of two side faces of...
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6868098 |
Dual-wavelength passive self-modulated mode-locked semiconductor laser diode
Method of generating laser pulses using a semiconductor laser diode as a lasing amplification medium of an extended laser cavity are presented. Passive self-modulated mode-locked operation of the...
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6865196 |
Laser spectroscopy using a master/slave architecture
A system for tuning one or more second radiant sources relative to a first radiant source may include a coupler configured to combine output signals from the first radiant source and a second...
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6865006 |
Optical modulator module
“This invention offer optical modulator module with fulfilling the effective and the stable optical modulation, which stabilizes the emission of semiconductor and control the shift of optic axis...
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6865214 |
Wavelength tunable VCSEL
A wavelength tunable VCSEL is provided. The wavelength tunable VCSEL includes a current constricting layer which is formed on a lower distributed Bragg reflector, upper and lower electrodes for...
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6862309 |
Passivation scheme for oxide vertical cavity surface-emitting laser
A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure, forming an oxidation cavity partially through the VCSEL structure, oxidizing a layer...
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6862300 |
High power semiconductor laser diode and method for making such a diode
Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication...
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6859474 |
Long wavelength pseudomorphic InGaNPAsSb type-I and type-II active layers for the gaas material system
The invention discloses improved structures of light-processing (e.g. light-emitting and light-absorbing/sensing) devices, in particular Vertical Cavity Surface Emitting Lasers (VCSELs), such as...
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6856634 |
Laser processing device and laser processing method
The present invention provides a laser machining apparatus in a simple structure which can properly carry out laser machining by irradiating a laser beam easily at a predetermined energy density to...
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6856635 |
Surface light emitting type semiconductor laser having a vertical cavity
A lower multilayer reflection film ( 2 ), a light emitting layer forming portion ( 6 ) and an upper multilayer reflection film ( 8 ) are sequentially formed on a substrate ( 1 ) to form a...
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6856631 |
Semiconductor device with saturable absorbing layer
A self-pulsating semiconductor laser device includes a semiconductor substrate of the first conductivity type, a first cladding layer of the first conductivity type formed on the substrate and an...
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6853661 |
Gain-coupled semiconductor laser device lowering blue shift
A low clad layer made of semiconductor of a first conductivity type is formed on a semiconductor substrate. An active layer is formed on the low clad layer. The active layer is constituted by...
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6853662 |
Electrically pumped, polycrystalline ZnO laser and a method of fabricating the same
The invention includes an electrically pumped polycrystalline ZnO laser and it's fabrication procedure. A film of ZnO is grown on a suitably adapted polycrystalline underlayer in which the grains...
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6853008 |
Semiconductor device and manufacturing method thereof
A semiconductor device has a structure in which a GaAs substrate and an InP substrate, different in lattice constant, are bonded to each other. An amorphous layer made of constituent atoms of the...
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6850547 |
Nitride based semiconductor laser device and method of fabricating the same
A semiconductor laser device is constructed by stacking an n-cladding layer, an n-optical guide layer, an MQW active layer, a p-cap layer, a p-optical guide layer, a p-cladding layer, an n-current...
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6850549 |
Light source device for pumping solid-state laser medium
A light source device for pumping a solid-state laser medium of a laser generator, which is compact and capable of economically using LD bars constituting the LD stack with easy maintenance. The...
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6847666 |
Self-sustained pulsating laser diode
A self-sustained pulsating laser diode in which a region in an active layer functions as a saturable absorber has at least five and no more than ten quantum wells, p-type cladding layer flat part...
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6847667 |
Semiconductor laser device and laser module using same
A semiconductor laser device emitting a laser beam having stable emitting wavelength and a multimode spectrum is provided. The semiconductor laser device is a Fabry-Perot type semiconductor laser...
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6845112 |
Semiconductor laser and method for manufacturing the same
A stem is formed by fixing two leads to a base having a planar shape that is substantially circular to be remote from one diameter thereof by a specified distance and by providing a heat sink onto...
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