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7403552 |
High efficiency intersubband semiconductor lasers
An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least...
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7400663 |
Orientated group IV-VI semiconductor structure, and method for making and using the same
A method of growing and fabricating a group IV-VI semiconductor structure, for use in fabricating devices. In one embodiment, the group IV-VI semiconductor structure produced by the method of the...
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7397833 |
Semiconductor laser
A semiconductor laser according to the present invention comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer...
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7391800 |
Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method
In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled...
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7391799 |
Mode selective semiconductor mirror for vertical cavity surface emitting lasers
A vertical cavity surface emitting laser with a mode-selective mirror. A filter is formed on the top DBR stack of a VCSEL. The filter includes semiconductor layers that are etch stops for...
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7391801 |
Electrically pumped Group IV semiconductor micro-ring laser
An electrically pumped semiconductor laser is provided as including a waveguide structure disposed on the substrate. An optical coupling layer is disposed on the substrate and the waveguide. A...
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7386016 |
Terahertz frequency radiation sources and detectors based on group IV materials and method of manufacture
An electrically-pumped terahertz (THz) frequency radiation source (or detector), including an optical gain (or absorption) material with two electrodes electrically coupled to the optical gain...
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7385225 |
Surface emitting type device, and method for manufacturing the same
A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, and an emission section including a second...
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7378292 |
Method of fabricating semiconductor optical device
Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and...
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7373059 |
Compact, single chip-based, entangled polarization-state photon sources and methods for generating photons in entangled polarization states
Various embodiments of the present invention are directed to compact systems for generating polarization-entangled photons. In one embodiment of the present invention, a polarization...
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7372885 |
Semiconductor laser device and optical information recording apparatus provided therewith
A semiconductor laser device that offers higher coupling efficiency to a pickup optical system by dramatically reducing the amount of difference between the shape of an FFP in the vertical...
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7369594 |
Semiconductor laser
A semiconductor laser of effective index type which has a lower cladding layer, an active layer, and an upper cladding layer, which are sequentially arranged upward, with said upper cladding layer...
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7369588 |
Broad-band optical semiconductor device and a method for manufacturing the same
Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad...
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7369581 |
Laser module and method of manufacture thereof
A laser module includes a semiconductor laser that emits laser light within a wavelength range of 350 to 450 nm, and hermetically sealing members, in which the semiconductor is sealed. The amount...
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7366216 |
Semiconductor laser element formed on substrate having tilted crystal orientation
A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate...
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7366215 |
Optical module
An optical module includes a stem; a first lead pin and a second lead pin for receiving differential signals, the first and second lead pins penetrating the stem; a mount block fixed to the stem; a...
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7365368 |
Surface-emitting type wafer and method for manufacturing the same, and burn-in method for surface-emitting type wafers
To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting...
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7362785 |
Semiconductor laser apparatus and production method thereof
A semiconductor blue-light-laser apparatus for emitting laser beams with high positional accuracy, which is achieved by mounting a semiconductor laser element on a semiconductor substrate with high...
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7362787 |
Self-mode-locked semiconductor laser
An interband self-mode-locked (SML) semiconductor laser utilizes an active waveguide structure that includes an active waveguide section and one or more passive waveguide sections that together...
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7362784 |
Laser irradiation method, laser irradiation apparatus, and semiconductor device
An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are...
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7359419 |
Vertical cavity surface emitting laser optimized for thermal sensitivity
A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate....
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7356060 |
Semiconductor laser device and method for fabricating the same
A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW...
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7356063 |
Semiconductor surface emitting device
This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block...
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7356059 |
Nitride semiconductor laser device and semiconductor optical device
A drive current is generated by mixing a pulse signal from a pulse generator and a DC current from a DC current power supply using a T circuit and injected into a nitride semiconductor laser having...
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7342950 |
Tunable laser source with integrated optical modulator
A tunable laser source ( 10 ) with an integrated optical modulator ( 20 ). The laser source ( 10 ) is a widely tunable semiconductor laser that is comprised of an active region on top of a thick...
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7339967 |
Semiconductor device, semiconductor laser device, manufacturing method for semiconductor device, manufacturing method for semiconductor laser device, optical disk device and optical transmission system
A semiconductor device has a main structure member laminated on a first conductivity-type semiconductor substrate. On the main structure, there is formed a first substructure member, the entirety...
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7339969 |
Refined mirror structure for reducing the effect of feedback on a VCSEL
A VCSEL is provided that integrates an absorbing layer sandwiched within a null of the standing wave in the emitting mirror to reduce the reflectivity and transmissivity of the emitting mirror as...
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7339964 |
Laser diode with phase matching grating
A semiconductor diode laser that generates light at wavelengths longer than conventional diode lasers. The laser includes a first gain element that generates a first “pump” laser beam having a...
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7339971 |
Optical element and optical module
An optical element comprising: a surface-emitting type semiconductor laser having an emission surface; and a photodetector element formed above the emission surface of the surface-emitting type...
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7339970 |
Surface light emitting element, optical module, light transmission device
To provide a surface light emitting element capable of maintaining characteristics of the surface light emitting element and accurately detecting emitted light. A surface light emitting element...
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7336688 |
Surface emitting semiconductor laser and method of manufacturing the same
A surface emitting semiconductor laser includes a substrate, a first semiconductor multiple layer reflecting mirror formed on the substrate, the reflecting mirror having a semiconductor layer...
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7327770 |
Nitride semiconductor laser device
To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the...
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7322704 |
Frequency stabilized vertical extended cavity surface emitting lasers
A vertical extended cavity surface emitting laser (VECSEL) includes intra-cavity frequency doubling. Conventional frequency control elements, such as etalons, are replaced with thin film...
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7315559 |
Nitride semiconductor laser device and a method for improving its performance
The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride...
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7312581 |
Circuitry and methods for improving the performance of a light emitting element
Light emitting elements with preselected or adjustable impedance characteristics are provided. Embodiments using a preselected impedance characteristic obtain significant performance benefits...
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7310362 |
Semiconductor light emitting device and semiconductor light emitting apparatus
A semiconductor light emitting device comprises: a stacked body of semiconductor including an active layer; a ridge stripe protruding and extending in a first direction on a first major surface of...
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7310361 |
Intersubband semiconductor lasers with enhanced subband depopulation rate
Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution...
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7307923 |
Electro magnetic field generating element, information recording and reproducing head and information recording and reproducing device
To realize an electromagnetic field generating element, an information recording and reproducing head and an information recording and reproducing device for high frequency magnetic recording and...
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7308011 |
Versatile method and system for single mode VCSELs
A single mode VCSEL including a substrate having a lower surface and an upper surface, a bottom electrical contact disposed along the lower surface of the substrate, a lower mirror portion disposed...
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7305018 |
Surface-emitting semiconductor laser array and optical transmission system using the same
A surface emitting semiconductor laser includes a substrate, at least one light-emitting element on the substrate, and at least one protection element on the substrate. The light-emitting element...
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7301977 |
Tuneable unipolar lasers
A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a...
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7301978 |
Semiconductor laser element with optical waveguide layer having increased thickness
In a semiconductor laser element: a lower cladding layer of In 0.49 (Al x1 Ga 1-x1 ) 0.51 (x2<x1<1) of a first conductive type which lattice-matches with GaAs; a lower optical waveguide layer...
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7298769 |
Semiconductor laser
A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×10 17 cm −3 or less are stacked on a p-type InP substrate...
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7297989 |
Diboride single crystal substrate, semiconductor device using this and its manufacturing method
Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a...
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7295588 |
Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device
The present invention provides a semiconductor laser element, a method of fabrication thereof, and a multi-wavelength monolithic semiconductor laser device that achieve self-sustained pulsation up...
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7295587 |
Semiconductor laser having optical guide layer doped for decreasing resistance
In a semiconductor laser element: a lower cladding layer of a first conductivity type, a quantum-well active layer, an upper cladding layer of a second conductivity type, a contact layer of the...
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7295589 |
Frequency modulated vertical cavity laser
A frequency modulated (FM) vertical cavity surface emitting laser (VCSEL). The frequency modulated VCSEL includes a mirror region that has an active region. The frequency modulated VCSEL also...
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7292613 |
Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material
A micropost microcavity device has a maximum field intensity at the center of a high-index spacer as well as a small mode volume. The device has an approximately half-wavelength thick low-index...
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7292614 |
Organic laser and liquid crystal display
An asymmetric light emitting structure for producing polarized light that includes a light emitting layer having a plurality of light emitting species, wherein orientation of the light emitting...
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7289545 |
Semiconductor laser with integrated heating element and method of manufacturing same
A semiconductor laser structure has a laser active region and side trenches extending along the laser active region. At least one heatable stripe, in at least one of the side trenches, is connected...
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