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6804277 Semiconductor laser module and method of making the same  
A semiconductor laser module according to the present invention has a semiconductor laser element for outputting a laser beam and a package hermitically containing and sealing the semiconductor...
6804270 Efficient fiber-semiconductor tunable laser source  
An efficient high power tunable laser source suitable for use in optical communications equipment and networks comprises an optically pumped VCSEL and a fiber amplifier for the laser output of said...
6803605 Method to GaAs based lasers and a GaAs based laser  
The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride...
6798806 Hybrid mirror VCSELs  
VCSELs having upper mirror structures comprised of a semiconductive top DBR, metal contacts, and a top mirror. The top DBR is thick enough for adequate current spreading, but thin enough, being no...
6798805 Semiconductor laser device containing controlled interface oxygen at both end facets  
In a semiconductor laser device: a multilayer structure including a plurality of semiconductor layers is formed on a substrate; and at least one dielectric layer is formed on each of two end facets...
6798798 Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module  
A cavity length is determined on the basis of a relationship of electric drive power to a range of optical output power over 50 mW, for cavity length to be constant as a parameter in a range over...
6798794 Semiconductor laser device, astigmatic correction plate used therefor and method of arranging the astigmatic correction plate  
Provided are a semiconductor laser device capable of increasing an emission angle of a laser beam, an astigmatic correction plate used therefor and a method of arranging the astigmatic correction...
6798804 Laser apparatus including surface-emitting semiconductor excited with semiconductor laser element, and directly modulated  
A laser apparatus includes a semiconductor laser element, a surface-emitting semiconductor element including a first mirror, a second mirror, and a modulation unit. The semiconductor laser element...
6798817 Distributed bragg reflectors incorporating SB material for long-wavelength vertical cavity surface emitting lasers  
A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Use of...
6795461 Optoelectric module  
An optoelectric module includes a cylindrical ferrule defining an optical axis and having a first end constructed to receive an optical fiber aligned along the optical axis. A TO-can is positioned...
6795457 Multiple wavelength surface-emitting laser device and method for its manufacture  
A multiple wavelength surface-emitting laser device equipped with a substrate and a plurality of surface-emitting lasers formed on the substrate by a continuous manufacturing process is provided....
6795478 VCSEL with antiguide current confinement layer  
A surface-emitting laser, such as a VCSEL, for generating single-transverse mode laser light at a lasing wavelength, has a first mirror and a second mirror positioned so as to define a laser cavity...
6795466 Distributed feedback type semiconductor laser device  
A DFB type semiconductor laser device including a laser substrate, a grating layer, an insulating layer and an electrode layer, which are laminated in the given order. The insulating layer includes...
6795475 Solid-state laser apparatus excited by laser light from semiconductor laser unit having increased resonator length  
A semiconductor-laser-excited solid-state laser apparatus includes a solid-state laser element and a semiconductor laser unit including a resonator. The solid-state laser element is excited by...
6792026 Folded cavity solid-state laser  
(FCSSL) “Folded Cavity Solid-State Laser” comprising a waveguide ( 35 ) having at least one total internal reflecting prism ( 35 A) constructed from ion-implanted laser-active material defining...
6792029 Method of suppressing energy spikes of a partially-coherent beam  
Accordingly, a method of suppressing energy spikes is provided comprising projecting a laser beam through a mask having a slit pattern comprising a corner region with edges, and a blocking feature...
6782032 Semiconductor laser, ray module using the same and ray communication system  
In a semiconductor laser for emitting light perpendicular to substrate crystal, including, on the substrate crystal, an active layer for generating light, a cavity structure sandwiching the active...
6782018 Diode laser module and application equipment  
This invention is provided to reduce wavefront aberrations caused by the filling of a transparent resin intended to prevent degradation of a diode laser in a hermetically sealed package. A...
6778581 Tunable vertical cavity surface emitting laser  
A tunable vertical cavity surface emitting laser (VCSEL) using photonic crystals and an electrostrictive material that includes a hologram with a narrow filter function. Photonic crystals are...
6778572 Electrode structure, process for fabricating electrode structure and semiconductor light-emitting device  
An electrode structure includes a conductive film 24 c formed on a base substrate 10 through an insulation film. The insulation film comprises a plurality of poles 36 of polyimide, a first...
6778574 Semiconductor laser device and its manufacturing method, and optical communication system and optical sensor system  
A surface of a molded resin 4 is entirely or partially roughened, and the light is diffused by the roughened portion. Alternatively, a cap and a glass cap having a light-diffusive function are...
6778579 Solid-state laser compensated for pumping-light astigmatism  
In a solid-state laser in which a gain crystal is polished to have the Brewster angle or a solid-state laser comprising a dichroic concave mirror to which light enters at an incidence angle which...
6778573 Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thinner than lower optical waveguide layer  
In a semiconductor laser device including having an index-guided structure and oscillating in a fundamental transverse mode, a lower cladding layer, a lower optical waveguide layer, a quantum well...
6775427 Laterally coupled wave guides  
A system capable of creating multiple beams of light using laterally coupled waveguides. Each beam is of a different central wavelength, capable of being generated on chip and coupled into a single...
6775308 Multi-wavelength semiconductor laser arrays and applications thereof  
A multi-wavelength laser array has a group of multiple lasers, each of the lasers in the group being constructed to emit at a specified wavelength within a range, the specified wavelength of one...
6774410 Epitaxial growth of nitride semiconductor device  
The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound...
6775314 Distributed bragg reflector using AIGaN/GaN  
A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer,...
6771680 Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL)  
An electrically-pumped vertical-cavity surface-emitting laser (VCSEL) has multiple active regions. Embodiments of the invention provide an electrically-pumped VCSEL having a number of different...
6770499 Method of making DBR grating  
A DBR grating may be created in the cladding of a wafer by defining a non-gain window area, advantageously at the end of the wafer. The non-gain area may be defined either by removing all layers...
6768755 Semiconductor laser device  
A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a...
6768756 MEMS membrane with integral mirror/lens  
An optical membrane device and method for making such a device are described. This membrane is notable in that it comprises an optically curved surface. In some embodiments, this curved optical...
6768757 Cavity mirror for optically-pumped vertical-cavity surface-emitting laser (VCSEL)  
A laser comprising: a front mirror and a rear mirror which are disposed so as to establish a reflective cavity therebetween; a gain region disposed between the front mirror and the rear mirror, the...
6765948 VCSEL assembly with edge-receiving optical devices  
The present invention is directed to a method and system for conditioning the output signals of an array of surface-emitting lasers with an array of edge-receiving optical devices. Both the array...
6757311 Laser diode, semiconductor light-emitting device, and method of production thereof  
A laser diode capable of reducing an operating current and thereby improving long term reliability and able to be produced by a simpler process than in the prior art and a semiconductor light...
6757312 Electron beam pumped semiconductor laser screen and associated fabrication method  
An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive...
6753199 Topside active optical device apparatus and method  
A method of integrating a topside optical device, having electrical contacts on a top side, with an electronic chip having electrical contacts on a connection side, involves creating a trench,...
6751242 Surface emitting semiconductor laser and surface emitting semiconductor laser array  
A surface emitting semiconductor laser capable of controlling the polarization direction of laser light and a surface emitting semiconductor laser array. In a surface emitting semiconductor laser,...
6751241 Multimode fiber laser gratings  
An optically active waveguide laser ( 30 ) includes a multimode portion ( 126 ) for carrying more than one spatial mode at a predetermined wavelength chosen from a bandwidth including a pump...
6748001 Semiconductor laser device providing laser light of two wavelengths and method of fabricating the same  
An object of the present invention is to provide a semiconductor laser device which is capable of selectively emitting two kinds of laser light of light emitting characteristics differing in...
6744797 Semiconductor laser device  
A semiconductor laser device improves reliability during high-power oscillation. An n-type GaAs buffer layer, an n-type In 0.48 Ga 0.52 P lower cladding layer, an n-type or i-type In x1 Ga 1−x1...
6744798 Surface-type light amplifer device and method of manufacture thereof  
A surface-type light amplifier device has an active layer of a light amplification section sandwiched between an n-type semiconductor cladding layer that is an n-type semiconductor layer and a...
6744796 Passivated optical device and method of forming the same  
A semiconductor optical device structure includes passivated facets formed by first removing the native oxide contaminant with a “non-reactive” molecular gas etchant, such as XeF 2 . As the...
6741630 Ridge waveguide distributed feedback laser  
A ridge waveguide distributed feedback laser includes a p-type InGaAsP grating layer having a p-type carrier density ranging from 1.5×10 18 cm −3 to 4.0×10 −3 cm −3 and preferably from...
6738402 Semiconductor device with multiple laser resonators  
By using a single semiconductor laser device, laser beams in infrared and red regions are generated at a distance between close light emitting spots. A semiconductor laser resonator having an...
6735230 Semiconductor luminous elements and semiconductor laser  
On the surface of a conductive substrate ( 1 ) of GaAs, Ge, Si, etc., a semiconductor lamination section including a light emitting layer forming portion ( 11 ) that has at least an n-type layer (...
6735234 Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser  
A passively mode-locked optically pumped semiconductor vertical-external-cavity surface-emitting laser (OPS-EXSEL) is disclosed. The laser is mode locked by a semiconductor saturable absorber...
6735235 Three-dimensional photonic crystal add-drop filter  
A three-dimensional photonic crystal add-drop filter apparatus has a three-dimensional photonic crystal, a first waveguide for transmitting light having a frequency within a bandgap of the...
6730944 InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP  
The invention provides a laser structure that operates at a wavelength of 1.3 μm and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of...
6728280 Apparatus and method providing a balancing load to a laser differential drive circuit  
A die having a semiconductor laser driven by a differential drive circuit is provided. The die provides a matched load to the drive circuit by also having a balancing load with an impedance,...
6728279 Widely wavelength tunable integrated semiconductor device and method for widely tuning semiconductor devices  
Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are...