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6804277 |
Semiconductor laser module and method of making the same
A semiconductor laser module according to the present invention has a semiconductor laser element for outputting a laser beam and a package hermitically containing and sealing the semiconductor...
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6804270 |
Efficient fiber-semiconductor tunable laser source
An efficient high power tunable laser source suitable for use in optical communications equipment and networks comprises an optically pumped VCSEL and a fiber amplifier for the laser output of said...
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6803605 |
Method to GaAs based lasers and a GaAs based laser
The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride...
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6798806 |
Hybrid mirror VCSELs
VCSELs having upper mirror structures comprised of a semiconductive top DBR, metal contacts, and a top mirror. The top DBR is thick enough for adequate current spreading, but thin enough, being no...
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6798805 |
Semiconductor laser device containing controlled interface oxygen at both end facets
In a semiconductor laser device: a multilayer structure including a plurality of semiconductor layers is formed on a substrate; and at least one dielectric layer is formed on each of two end facets...
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6798798 |
Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module
A cavity length is determined on the basis of a relationship of electric drive power to a range of optical output power over 50 mW, for cavity length to be constant as a parameter in a range over...
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6798794 |
Semiconductor laser device, astigmatic correction plate used therefor and method of arranging the astigmatic correction plate
Provided are a semiconductor laser device capable of increasing an emission angle of a laser beam, an astigmatic correction plate used therefor and a method of arranging the astigmatic correction...
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6798804 |
Laser apparatus including surface-emitting semiconductor excited with semiconductor laser element, and directly modulated
A laser apparatus includes a semiconductor laser element, a surface-emitting semiconductor element including a first mirror, a second mirror, and a modulation unit. The semiconductor laser element...
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6798817 |
Distributed bragg reflectors incorporating SB material for long-wavelength vertical cavity surface emitting lasers
A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Use of...
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6795461 |
Optoelectric module
An optoelectric module includes a cylindrical ferrule defining an optical axis and having a first end constructed to receive an optical fiber aligned along the optical axis. A TO-can is positioned...
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6795457 |
Multiple wavelength surface-emitting laser device and method for its manufacture
A multiple wavelength surface-emitting laser device equipped with a substrate and a plurality of surface-emitting lasers formed on the substrate by a continuous manufacturing process is provided....
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6795478 |
VCSEL with antiguide current confinement layer
A surface-emitting laser, such as a VCSEL, for generating single-transverse mode laser light at a lasing wavelength, has a first mirror and a second mirror positioned so as to define a laser cavity...
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6795466 |
Distributed feedback type semiconductor laser device
A DFB type semiconductor laser device including a laser substrate, a grating layer, an insulating layer and an electrode layer, which are laminated in the given order. The insulating layer includes...
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6795475 |
Solid-state laser apparatus excited by laser light from semiconductor laser unit having increased resonator length
A semiconductor-laser-excited solid-state laser apparatus includes a solid-state laser element and a semiconductor laser unit including a resonator. The solid-state laser element is excited by...
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6792026 |
Folded cavity solid-state laser
(FCSSL) “Folded Cavity Solid-State Laser” comprising a waveguide ( 35 ) having at least one total internal reflecting prism ( 35 A) constructed from ion-implanted laser-active material defining...
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6792029 |
Method of suppressing energy spikes of a partially-coherent beam
Accordingly, a method of suppressing energy spikes is provided comprising projecting a laser beam through a mask having a slit pattern comprising a corner region with edges, and a blocking feature...
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6782032 |
Semiconductor laser, ray module using the same and ray communication system
In a semiconductor laser for emitting light perpendicular to substrate crystal, including, on the substrate crystal, an active layer for generating light, a cavity structure sandwiching the active...
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6782018 |
Diode laser module and application equipment
This invention is provided to reduce wavefront aberrations caused by the filling of a transparent resin intended to prevent degradation of a diode laser in a hermetically sealed package. A...
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6778581 |
Tunable vertical cavity surface emitting laser
A tunable vertical cavity surface emitting laser (VCSEL) using photonic crystals and an electrostrictive material that includes a hologram with a narrow filter function. Photonic crystals are...
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6778572 |
Electrode structure, process for fabricating electrode structure and semiconductor light-emitting device
An electrode structure includes a conductive film 24 c formed on a base substrate 10 through an insulation film. The insulation film comprises a plurality of poles 36 of polyimide, a first...
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6778574 |
Semiconductor laser device and its manufacturing method, and optical communication system and optical sensor system
A surface of a molded resin 4 is entirely or partially roughened, and the light is diffused by the roughened portion. Alternatively, a cap and a glass cap having a light-diffusive function are...
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6778579 |
Solid-state laser compensated for pumping-light astigmatism
In a solid-state laser in which a gain crystal is polished to have the Brewster angle or a solid-state laser comprising a dichroic concave mirror to which light enters at an incidence angle which...
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6778573 |
Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thinner than lower optical waveguide layer
In a semiconductor laser device including having an index-guided structure and oscillating in a fundamental transverse mode, a lower cladding layer, a lower optical waveguide layer, a quantum well...
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6775427 |
Laterally coupled wave guides
A system capable of creating multiple beams of light using laterally coupled waveguides. Each beam is of a different central wavelength, capable of being generated on chip and coupled into a single...
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6775308 |
Multi-wavelength semiconductor laser arrays and applications thereof
A multi-wavelength laser array has a group of multiple lasers, each of the lasers in the group being constructed to emit at a specified wavelength within a range, the specified wavelength of one...
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6774410 |
Epitaxial growth of nitride semiconductor device
The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound...
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6775314 |
Distributed bragg reflector using AIGaN/GaN
A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer,...
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6771680 |
Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL)
An electrically-pumped vertical-cavity surface-emitting laser (VCSEL) has multiple active regions. Embodiments of the invention provide an electrically-pumped VCSEL having a number of different...
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6770499 |
Method of making DBR grating
A DBR grating may be created in the cladding of a wafer by defining a non-gain window area, advantageously at the end of the wafer. The non-gain area may be defined either by removing all layers...
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6768755 |
Semiconductor laser device
A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a...
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6768756 |
MEMS membrane with integral mirror/lens
An optical membrane device and method for making such a device are described. This membrane is notable in that it comprises an optically curved surface. In some embodiments, this curved optical...
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6768757 |
Cavity mirror for optically-pumped vertical-cavity surface-emitting laser (VCSEL)
A laser comprising: a front mirror and a rear mirror which are disposed so as to establish a reflective cavity therebetween; a gain region disposed between the front mirror and the rear mirror, the...
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6765948 |
VCSEL assembly with edge-receiving optical devices
The present invention is directed to a method and system for conditioning the output signals of an array of surface-emitting lasers with an array of edge-receiving optical devices. Both the array...
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6757311 |
Laser diode, semiconductor light-emitting device, and method of production thereof
A laser diode capable of reducing an operating current and thereby improving long term reliability and able to be produced by a simpler process than in the prior art and a semiconductor light...
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6757312 |
Electron beam pumped semiconductor laser screen and associated fabrication method
An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive...
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6753199 |
Topside active optical device apparatus and method
A method of integrating a topside optical device, having electrical contacts on a top side, with an electronic chip having electrical contacts on a connection side, involves creating a trench,...
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6751242 |
Surface emitting semiconductor laser and surface emitting semiconductor laser array
A surface emitting semiconductor laser capable of controlling the polarization direction of laser light and a surface emitting semiconductor laser array. In a surface emitting semiconductor laser,...
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6751241 |
Multimode fiber laser gratings
An optically active waveguide laser ( 30 ) includes a multimode portion ( 126 ) for carrying more than one spatial mode at a predetermined wavelength chosen from a bandwidth including a pump...
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6748001 |
Semiconductor laser device providing laser light of two wavelengths and method of fabricating the same
An object of the present invention is to provide a semiconductor laser device which is capable of selectively emitting two kinds of laser light of light emitting characteristics differing in...
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6744797 |
Semiconductor laser device
A semiconductor laser device improves reliability during high-power oscillation. An n-type GaAs buffer layer, an n-type In 0.48 Ga 0.52 P lower cladding layer, an n-type or i-type In x1 Ga 1−x1...
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6744798 |
Surface-type light amplifer device and method of manufacture thereof
A surface-type light amplifier device has an active layer of a light amplification section sandwiched between an n-type semiconductor cladding layer that is an n-type semiconductor layer and a...
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6744796 |
Passivated optical device and method of forming the same
A semiconductor optical device structure includes passivated facets formed by first removing the native oxide contaminant with a “non-reactive” molecular gas etchant, such as XeF 2 . As the...
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6741630 |
Ridge waveguide distributed feedback laser
A ridge waveguide distributed feedback laser includes a p-type InGaAsP grating layer having a p-type carrier density ranging from 1.5×10 18 cm −3 to 4.0×10 −3 cm −3 and preferably from...
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6738402 |
Semiconductor device with multiple laser resonators
By using a single semiconductor laser device, laser beams in infrared and red regions are generated at a distance between close light emitting spots. A semiconductor laser resonator having an...
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6735230 |
Semiconductor luminous elements and semiconductor laser
On the surface of a conductive substrate ( 1 ) of GaAs, Ge, Si, etc., a semiconductor lamination section including a light emitting layer forming portion ( 11 ) that has at least an n-type layer (...
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6735234 |
Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser
A passively mode-locked optically pumped semiconductor vertical-external-cavity surface-emitting laser (OPS-EXSEL) is disclosed. The laser is mode locked by a semiconductor saturable absorber...
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6735235 |
Three-dimensional photonic crystal add-drop filter
A three-dimensional photonic crystal add-drop filter apparatus has a three-dimensional photonic crystal, a first waveguide for transmitting light having a frequency within a bandgap of the...
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6730944 |
InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP
The invention provides a laser structure that operates at a wavelength of 1.3 μm and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of...
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6728280 |
Apparatus and method providing a balancing load to a laser differential drive circuit
A die having a semiconductor laser driven by a differential drive circuit is provided. The die provides a matched load to the drive circuit by also having a balancing load with an impedance,...
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6728279 |
Widely wavelength tunable integrated semiconductor device and method for widely tuning semiconductor devices
Alternative laser structures, which have potentially the same tuning performance as (S)SG-DBR and GCSR lasers, and a fabrication process which is similar to that of the (S)SG-DBR laser, are...
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