|
Match
|
Document |
Document Title |
|
|
6845115 |
Coupled resonant cavity surface-emitting laser
The CRCSEL comprises a single-mode optical gain structure and an optically-resonant cavity. The single-mode optical gain structure is structured to generate excitation light having a wavelength and...
|
|
|
6845120 |
Laser array and method of making same
A laser array and method of making same has precision fiducial marks that aid in the alignment of the laser array. The invention requires forming additional optical features adjacent to the laser...
|
|
|
6836496 |
Semiconductor laser device
An n-current blocking layer is formed by alternately stacking an n-first current blocking layer of a nitride based semiconductor containing Al or B and an n-second current blocking layer of a...
|
|
|
6836497 |
Semiconductor laser module and method for forming semiconductor laser module
A semiconductor laser module is formed by directly bonding a semiconductor laser, which has a wavelength tuning mechanism, and an optical wavelength conversion element which exits laser beam of the...
|
|
|
6836492 |
Laser-diode module, optical transceiver and fiber transmission system
An LD module capable of generating a good optical waveform at a high speed of about 10 Gbit/s or higher in which a damping resistor is disposed in parallel with a laser-diode device in the inside...
|
|
|
6836500 |
Semiconductor laser chip and method for fabricating a semiconductor laser chip
A semiconductor laser chip has a semiconductor laser element and a beam shaper integrated into the semiconductor laser chip and serving for shaping a laser beam emitted by the semiconductor laser...
|
|
|
6834070 |
Edge-facet pumped, multi-aperture, thin-disk laser geometry for very high average power output scaling
The average power output of a laser is scaled, to first order, by increasing the transverse dimension of the gain medium while increasing the thickness of an index matched light guide...
|
|
|
6831937 |
Method of fabricating semiconductor laser device and semiconductor laser device
A method of fabricating a semiconductor laser device includes the steps of forming semiconductor layers composed of a first conductive type cladding layer, an active layer, and a second conductive...
|
|
|
6831293 |
P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source
A p-n junction-type compound semiconductor light-emitting device having a substrate formed of a single crystal, a first barrier layer provided on the substrate and formed of a compound...
|
|
|
6829262 |
Aging in tunable semiconductor lasers
A process evaluates an aging property of a distributed Bragg reflector (DBR) laser. The process includes illuminating a Bragg grating of the distributed Bragg reflector (DBR) laser with light while...
|
|
|
6829266 |
Optical semiconductor device increasing productivity and method of fabricating the same
An optical semiconductor device includes: an insulating base; and a lead structure which further includes: a flange supported on a first surface of the insulating base; at least a first type lead...
|
|
|
6829281 |
Vertical cavity surface emitting laser using photonic crystals
A vertical cavity surface emitting laser (VCSEL) using photonic crystals. Photonic crystals are formed such that the active region of the VCSEL is bounded by the photonic crystals. The photonic...
|
|
|
6829282 |
Vertical resonator laser diode containing coplanar electrical connecting contacts
A vertical resonator laser diode and a method for fabricating it are described. Electrical connecting contacts can be disposed on a common main surface of the laser diode, for example its light...
|
|
|
6829269 |
Systems and methods using phonon mediated intersubband laser
The present invention is directed to the development of compact, coherent sources emitting in the terahertz frequency region using interface phonons. In accordance with a preferred embodiment, a...
|
|
|
6829264 |
Laser frequency aging compensation
A semiconductor laser diode mounted to a heat sink body has a thermally resistive layer located between the two in order to provide a specified thermal impedance that balances the contrary...
|
|
|
6829270 |
Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device
When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V...
|
|
|
6829265 |
Semiconductor laser array
The subject of the disclosed art is to prevent a short circuit between plural electrodes caused by soldering in the assembling process for a semiconductor laser element. The constitution for...
|
|
|
6829256 |
Fiber laser apparatus as well as optical multi/demultiplexer and image display apparatus therefor
Light from a first excitation light source is incident on one facet of a first optical fiber. A core is doped with a first rare earth substance. A resonant section induces light resonance in the...
|
|
|
6829276 |
Integrated high power semiconductor laser
A single-transverse-mode laser has a resonance cavity with an output end. A gain medium is disposed within the resonance cavity. The gain medium portion includes an active portion. A mode expander...
|
|
|
6829283 |
Semiconductor laser
A semiconductor laser ( 100 ) comprises, in succession, a first reflector ( 102 ), a first optically active region ( 104 ), which can emit light of a first wavelength (λ 1 ), a second reflector (...
|
|
|
6826203 |
High yield DFB laser with effective reject selection
The present invention relates to a high yield DFB laser with an effective reject selection using criteria on threshold current. The demand for high output power often will require use of lasers...
|
|
|
6826206 |
Method of characterizing a tuneable laser
A method of evaluating a tuneable laser and determining suitable laser operation points. Part of the light emitted by the laser is led to a Fabry-Perot filter and to a pair of light detectors to...
|
|
|
6826212 |
Module for optical communications
A module for optical communication intended for decreasing the consumption power of a modulator integrated laser, in which a, multiple-quantum well constituting a laser active layer region...
|
|
|
6826209 |
Ultrabroad-band variable-wavelength wavelength-multiplexed pulse waveform shaping device
An ultra-broadband, variable and multiple wavelength, waveform shaping apparatus is disclosed that excels with the ability to yield light pulses shaped in waveform, variable and multiple in...
|
|
|
6822990 |
Semiconductor laser device
A semiconductor laser device comprises first current blocking layers formed to define a stripe-shaped current injected region extending in the direction in a front facet from which a laser light is...
|
|
|
6821026 |
Redundant configurable VCSEL laser array optical light source
A redundant configurable VCSEL laser array optical light source which provides for integrating optical communications capabilities into manufacturing processes for a substrate or submount such as a...
|
|
|
6822991 |
Light emitting devices including tunnel junctions
A light emitting device includes a first active region, a second active region, and a tunnel junction. The tunnel junction includes a layer of first conductivity type and a layer of second...
|
|
|
6822989 |
Semiconductor laser and a manufacturing method for the same
A semiconductor laser, including: an n-type cladding layer that has n-type conductivity; an active layer formed on top of the n-type cladding layer; a p-type cladding base layer that is formed on...
|
|
|
6822995 |
GaAs/AI(Ga)As distributed bragg reflector on InP
A vertical cavity surface emitting laser having a GaAs/Al(Ga)As DBR mirror over an InP layer A first GaAs layer is MOCVD grown on an InP layer at a growth temperature of between 400 and 450° C....
|
|
|
6822988 |
Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element
A laser apparatus includes a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light; and a surface-emitting semiconductor element...
|
|
|
6819688 |
Semiconductor laser device and optical fiber amplifier
A semiconductor laser device comprises an optical fiber having an optical fiber grating formed therein, a semiconductor laser having an active layer with a single quantum well, for emitting laser...
|
|
|
6819693 |
Sapphire monocrystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same
The present invention relates to a sapphire monocrystalline body to be used as the substrate for a semiconductor for electronic parts or component parts, and to a monocrystalline sapphire...
|
|
|
6819692 |
Optical amplifiers and lasers
An optical amplifier and laser having both broad band and wide range specific band capability can be based on semiconductor nanocrystal solids.
|
|
|
6819813 |
Optical land grid array interposer
An apparatus for integrating optical devices between a module and a circuit board comprising a carrier having optical waveguides, a module having optical ports on a surface of the module, the...
|
|
|
6819691 |
Creating sharp asymmetric lineshapes in microcavity structures
We disclose a new structure that allows the creation of sharp and asymmetric lineshapes in optical microcavity systems. In this structure, the response function can vary from 0% to 100% in a...
|
|
|
6816531 |
High-power, kink-free, single mode laser diodes
A high power, single lateral mode semiconductor laser has a waveguide with regions of different widths coupled by a tapered region. The laser has a laterally confining optical waveguide having a...
|
|
|
6816522 |
Semiconductor laser apparatus and method for manufacturing the same
A base frame, a laser device mounting frame, and a lead frame are formed by stamping and bending one metal plate. A reference plane is constituted by reference plane portions of the flat base...
|
|
|
6816523 |
VCSEL package and fabrication method
A VCSEL package includes a substrate and a VCSEL device coupled to the substrate. The VCSEL device includes a first VCSEL and a calibration VCSEL. A sensor is coupled to the substrate such that a...
|
|
|
6816524 |
InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer
In a semiconductor laser element, a lower cladding layer of a first conductive type, a GaAs first optical waveguide layer of the first conductive type or an undoped type, an InGaAsP or InGaAs...
|
|
|
6813291 |
Tunable fabry-perot filter and tunable vertical cavity surface emitting laser
A tunable Fabry-Perot filter and a tunable vertical cavity surface emitting laser (VCSEL) are disclosed, where both devices utilize an improved dome structure for creating an internal air gap and...
|
|
|
6813294 |
Optical semiconductor device provided with high-NA lens
An optical semiconductor device to increase optical communication speed has a silicon substrate with an etched V-shaped first groove portion, a light emitting element which has an optical axis in...
|
|
|
6813293 |
Long wavelength VCSEL with tunnel junction, and implant
A vertical cavity emitting laser (VCSEL) having a tunnel junction. The junction may be isolated with an implant into a top mirror and past the junction and p-layer. A trench around the VCSEL may...
|
|
|
6813292 |
Controllable low proton source
A controllable source of few photons operating at a predetermined wavelength. The source comprises a solid material ( 10 ) having a dilute concentration of elements ( 11 ) implanted therein that...
|
|
|
6810066 |
Fiber-coupled tunable single-mode long-wavelength vertical-cavity laser
A light source for generating and coupling light from a first wavelength into an optical fiber. The light source includes an output laser having a first optical cavity that includes a bottom mirror...
|
|
|
6810067 |
Single mode grating-outcoupled surface emitting laser with broadband and narrow-band DBR reflectors
A laser source is provided by the present invention, comprising a laser diode and has an active region with asymmetric distributed Bragg reflectors (DBRs) at either end to reflect light within the...
|
|
|
6807201 |
Laser with phase controlling region and method for driving the same
A laser includes a first region with a first moveguide having a first diffraction grating, a second region with a second waveguide having a second diffraction grating, and a phase controlling...
|
|
|
6804279 |
Surface emitting laser apparatus, its fabrication method, and its driving method
In a surface emitting laser apparatus having at least a light-emitting device, there is provided a cavity structure of the light-emitting device including a first n-type semiconductor multi-layer...
|
|
|
6804276 |
Semiconductor laser device which removes influences from returning light of three beams and a method of manufacturing the same
A semiconductor laser chip has an emission facet for emitting a laser beam. A sub-mount has a first surface and at least one second surface vertical to the first surface. The semiconductor laser...
|
|
|
6804271 |
Light emission methods and light emission devices
Light emission methods and light emission devices are described including method and devices capable of emitting light at a plurality of controllable wavelengths. According to one aspect, a light...
|
|
|
6804272 |
Self-pulsating laser diode and a method for causing a laser diode to output light pulses
A semiconductor self-pulsating laser diode ( 1 ) comprises a wave guiding layer ( 2 ) sandwiched between lower and upper cladding layers ( 4, 5 ). A current blocking layer ( 8 ) defining a slot (...
|