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7623368 |
Non-volatile semiconductor memory based on enhanced gate oxide breakdown
A semiconductor memory structure based on gate oxide break down is constructed in a deep N-well. Thus, the electrical field over the programmable element during the transient procedure of gate...
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7622982 |
Electrical fuse device
The invention provides an electrical fuse device comprising: a plurality of fuse cores, each having an electrical fuse element and a switching element serially connected to the electrical fuse...
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7619914 |
Semiconductor memory device
A memory cell includes an antifuse device that is capable of having data written thereto by breakdown of a gate dielectric film by application of a high voltage. A data inversion portion generates,...
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7613062 |
Semiconductor memory device in which data is stored in nonvolatile state, by using semiconductor elements of metal oxide semiconductor (MOS) structure
A semiconductor memory device includes a memory element, a first data line and a second data line, a first selection transistor, and a second selection transistor. The memory element includes a...
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7609539 |
Electrically programmable fuse bit
One-time programmable (OTP) nonvolatile fuse memory cells are disclosed that do not require decoding or addressing for reading their data content. Each fuse memory cell has its content latched at...
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7606058 |
Autonomous antifuse cell
An autonomous antifuse cell providing protection against intruders includes an antifuse, sense circuitry, feedback circuitry, program circuitry, and blocking circuitry. The blocking circuitry...
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7599206 |
Non-volatile semiconductor storage device
A non-volatile semiconductor storage device includes: one or more memory cells including anti-fuse elements capable of writing data by breaking down a gate insulation film of a MOS transistor with...
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7598127 |
Nanotube fuse structure
A method of forming a carbon nanotube fuse by depositing a carbon nanotube layer, then depositing a cap layer directly over the carbon nanotube layer. The cap layer is formed of a material that has...
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7593248 |
Method, apparatus and system providing a one-time programmable memory device
Disclosed are apparatus, system and methods of programming and readout of a one-time programmable memory devise having an array of memory cells, where the cells include an anti-fuse element and an...
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7590022 |
Electric fuse circuit providing margin read function
An electric fuse circuit including a first nonvolatile memory cell connected to a first bit line, a second nonvolatile memory cell connected to a second bit line, a latch connected to the first and...
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7589989 |
Method for protecting memory cells during programming
Improved circuitry and methods operate to protect the memory cells from potentially damaging electrical energy that can be imposed during programming of the memory cells. Additionally, the improved...
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7586773 |
Large array of upward pointing p-i-n diodes having large and uniform current
An upward-pointing p-i-n diode formed of deposited silicon, germanium, or silicon-germanium is disclosed. The diode has a bottom heavily doped p-type region, a middle intrinsic or lightly doped...
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7573118 |
MOS electric fuse, its programming method, and semiconductor device using the same
A programming method of a MOS electric fuse including preparing, as a fuse element, a MOS transistor which has a first impurity region and a second impurity region, both of a second conductivity...
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7567449 |
One-time-programmable logic bit with multiple logic elements
A memory cell with a logic bit has a first one-time-programmable (“OTP”) memory element providing a first OTP memory element output and a second OTP memory element providing a second OTP memory...
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7567114 |
Semiconductor device having two fuses in parallel
A semiconductor device employs two electric fuses ( 31, 32 ) connected in parallel to each other. First terminals of the electric fuses ( 31, 32 ) are connected to a junction of first and second...
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7566011 |
Semiconductor device
A semiconductor device which may be used as an ID chip and data may be rewritten only one time. In addition, a semiconductor device may be used as an ID chip and data may be written except when...
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7564707 |
One-time programmable non-volatile memory
An apparatus includes a semiconductor substrate, elongated diffused well regions, and elongated conductors. The semiconductor substrate has a first electrical conductivity type. The elongated...
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7561456 |
Memory array including programmable poly fuses
According to one exemplary embodiment, a memory array includes a memory cell having a programmable poly fuse coupled between a designated program node and a ground node, where the programmable poly...
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7551500 |
Memory cell fuse circuit and controlling method thereof
A controlling method of a memory cell fuse circuit is provided. The memory cell fuse circuit at least includes a reference cell fuse circuit and a plurality of normal cell fuse circuit. The...
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7551470 |
Non volatile memory RAD-hard (NVM-rh) system
The embodiments of the invention provide an apparatus, method, etc. for a non volatile memory RAD-hard (NVM-rh) system. More specifically, an IC permanent non-volatile storage element comprises an...
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7548479 |
Semiconductor memory device and manufacturing method thereof
A semiconductor memory device includes: a memory array; an internal address supplying unit configured to produce a first internal address in response to an external address; a first fuse unit...
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7545666 |
Electrical fuse self test and repair
A circuit for testing and repairing a fuse device having a plurality of fuse units and being able to serially input and output data is disclosed, the circuit comprises a first multiplexer...
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7545665 |
High yielding, voltage, temperature, and process insensitive lateral poly fuse memory
The present invention, generally speaking, provides for a non volatile memory cell requiring no extra process steps. In one embodiment, the non volatile memory cell is a lateral polysilicon...
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7542367 |
Semiconductor memory device
A write voltage source is capable of applying a write voltage, which is a high voltage. An antifuse is connected at one end to the write voltage source and has a resistance irreversibly variable...
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7532533 |
Antifuse circuit and method for selectively programming thereof
An antifuse circuit provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse has been previously programmed to a low resistance state in response to a...
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7529148 |
Programmable read-only memory
A programmable read-only memory comprises a memory cell or a plurality of such cells arranged as an array. Each memory cell comprises a transistor, such as a MOS TFT. An electronic switch allows...
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7525871 |
Semiconductor integrated circuit
Fuse data is supplied to each of a plurality of function blocks through a transfer path using shift registers. When the reliability of fuse elements is low, there is a possibility that a part of...
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7518899 |
Method of providing optimal field programming of electronic fuses
A method of providing optimal fuse programming conditions by which an integrated circuit chip customer may program electronic fuses in the field, i.e., outside of the manufacturing test...
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7515498 |
Electronic fuse apparatus and methodology including addressable virtual electronic fuses
A virtual electronic fuse (VEF) apparatus and methodology are disclosed that permit the state of an electronic fuse to change from an un-blown state to a blown state and then back to a virtual...
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7511982 |
High speed OTP sensing scheme
A high speed sensing scheme for a non-volatile memory array is disclosed. The memory array includes non volatile memory cells arranged in a complementary bitline configuration includes precharge...
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7508694 |
One-time-programmable memory
A one-time-programmable memory cell uses two complementary antifuses that are programmed in a complementary fashion such that only one of the two complementary antifuses is stressed by a...
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7505300 |
Nonvolatile semiconductor memory device using nonvolatile storage elements to which data can be written only once
A nonvolatile semiconductor memory device includes a nonvolatile storage element to which data is inhibited from being rewritten, a read operation control circuit which captures a read operation...
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7504875 |
Methods and apparatus for characterizing electronic fuses used to personalize an integrated circuit
An integrated circuit device having at least one fuse capable of being blown in order to provide measurements of fuse current-voltage characteristics is provided. The integrated circuit device also...
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7499353 |
Integrated circuit chip having non-volatile on-chip memories for providing programmable functions and features
An integrated circuit chip having programmable functions and features in which one-time programmable (OTP) memories are used to implement a non-volatile memory function, and a method for providing...
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7495987 |
Current-mode memory cell
Methods and corresponding systems for reading a memory cell include a first current sourced from a first current source into a summing node, wherein the first current source is coupled to a first...
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7492623 |
Option circuits and option methods of semiconductor chips
An option circuit of a semiconductor chip includes a first option circuit that is set before packaging the semiconductor chip to generate a first option signal; a second option circuit that is set...
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7489536 |
Semiconductor integrated circuit including fuse circuit and method of manufacturing the same
According to an embodiment of the invention, a fuse circuit includes: a pair of fuses; and a comparator circuit connected with nodes on one end side of the fuses through separating switches. The...
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7489535 |
Circuit configurations and methods for manufacturing five-volt one time programmable (OTP) memory arrays
This invention discloses a circuit trimming system that includes a one-time programmable memory (OTP). The OTP further includes a forward biased trim device connected between a voltage supply Vcc...
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7489180 |
Systems and methods for efuse fusing time reduction
Various systems and methods for device configuration are disclosed herein. For example, some embodiments of the present invention provide semiconductor devices that include a fuse blow circuit. The...
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7486535 |
Method and device for programming anti-fuses
A device includes an anti-fuse including a first electrode that can be selectively coupled to a first voltage reference and a second electrode that can be selectively coupled to a second voltage...
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7486534 |
Diode-less array for one-time programmable memory
A one-time programmable memory array includes a first row conductor extending in a first row direction and disposed at a first elevation, a second row conductor extending in a second row direction...
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7477555 |
System and method for differential eFUSE sensing without reference fuses
A differential fuse sensing system includes a fuse leg configured for introducing a sense current through an electrically programmable fuse (eFUSE) to be sensed, and a differential sense amplifier...
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7471540 |
Non-volatile semiconductor memory based on enhanced gate oxide breakdown
A semiconductor memory structure based on gate oxide break down is constructed in a deep N-well. Thus, the electrical field over the programmable element during the transient procedure of gate...
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7463503 |
Semiconductor device
A semiconductor device has: a memory element which is arranged on a semiconductor substrate and records information therein; a terminal for inputting first voltage for recording the information to...
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7462513 |
Methods for making printed fuse devices
Embodiments of the invention relate to efficient formation of improved fuses and fuse arrays, such as can be used in memory devices for example, by use of a printer that transfers material to a...
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7457187 |
Design structure for in-system redundant array repair in integrated circuits
A design structure for repairing an integrated circuit during operation of the integrated circuit. The integrated circuit comprising of a multitude of memory arrays and a fuse box holding control...
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7450453 |
Semiconductor memory device and method for driving bit line sense amplifier thereof
A semiconductor memory device includes an amplifying unit for amplifying a voltage difference between a bit line pair; a power supply driver for supplying a power to the amplifying unit in response...
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7450450 |
Circuitry for a programmable element
As part of anti-fuse circuitry for a memory device, a preferred exemplary embodiment of the current invention provides a direct connection between an anti-fuse and a contact pad used to provide...
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7436729 |
Fuse circuit and semiconductor device using fuse circuit thereof
A fuse circuit uses an electrically writable fuse circuit and comprises a first fuse unit provided with a first electrically writable fuse, and a second fuse unit provided with a second...
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7397720 |
Semiconductor storage device including electrical fuse module
Electrical fuse blocks ( 100 ) of a plurality of stages are provided each of which includes a plurality of electrical fuse cores ( 101 ). The electrical fuse block ( 100 ) includes a program shift...
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