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7623367 |
Read-only memory device and related method of design
A ROM comprises several bit output lines and X address decode lines, and stores a data set. Each address decode line stores a unique data word. Addresses in the data set that have the same data...
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7619913 |
Device, method and program for managing area information
In an apparatus for managing area data, the first data structure for area management includes: a first index data structure including a first root node corresponding to a first set of areas...
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7593817 |
Calculating confidence levels for peptide and protein identification
Computer programs and methods for defining a misidentification probability for an experimental protein divisible into experimental peptides. The invention receives data representing a set of...
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7577011 |
Optimization of ROM structure by splitting
A method for designing a read-only memory (ROM), and related device, includes partitioning a dataset into two or more sub-datasets that each have the same address space, but are of a smaller...
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7576407 |
Devices and methods for constructing electrically programmable integrated fuses for low power applications
Electrically programmable integrated fuses are provided for low power applications. Integrated fuse devices have stacked structures with a polysilicon layer and a conductive layer formed on the...
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7573077 |
Thyristor-based semiconductor memory device with back-gate bias
In accordance with an embodiment of the present invention, a thyristor-based semiconductor memory device may comprise an array of thyristor-based memory formed in an SOI wafer. A supporting...
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7570505 |
Memory based computation systems and methods for high performance and/or fast operations
A high performance logic circuit optimizes a digital logic function by dividing the function into smaller blocks. Thus, the logic circuit is divided into smaller blocks. The smaller blocks are...
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7567478 |
Leakage optimized memory
A method of power optimization in a memory is disclosed. The method generally includes the steps of (A) dividing a plurality of bit cells in a design of the memory into (i) a plurality of first...
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7566941 |
Magnetoresistive memory cell and process for producing the same
A magnetoresistive memory cell includes a tunnel barrier region between first and second electrode devices. The first electrode device includes a natural antiferromagnet region. A diffusion barrier...
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7565249 |
Method for the determination of a light transport parameter in a biological matrix
A method is proposed for the selective determination of a light transport parameter which is characteristic for the light scattering in a biological matrix ( 5 ), in particular for the purpose of...
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7561971 |
Methods and devices relating to estimating classifier performance
Methods and devices, including methods and devices for estimating classifier performance such as generalization performance, are disclosed. One method includes providing multiple samples. Each...
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7561456 |
Memory array including programmable poly fuses
According to one exemplary embodiment, a memory array includes a memory cell having a programmable poly fuse coupled between a designated program node and a ground node, where the programmable poly...
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7554831 |
Integrated circuit device with a ROM matrix
A read only memory matrix in an integrated circuit contains data transistors coupled to both the bit lines and the word lines in data dependent ones of the cells of the matrix. A differential sense...
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7535758 |
One or multiple-times programmable device
Methods and apparatus, including computer program products, for a one or multiple-times programmable memory device. A semiconductor may include an active region of a substrate, a thin oxide layer...
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7532533 |
Antifuse circuit and method for selectively programming thereof
An antifuse circuit provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse has been previously programmed to a low resistance state in response to a...
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7532496 |
System and method for providing a low voltage low power EPROM based on gate oxide breakdown
A system and method are disclosed for providing an electrically programmable read only memory (EPROM) in which each memory cell comprises an NMOS select transistor and a PMOS program transistor...
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7525871 |
Semiconductor integrated circuit
Fuse data is supplied to each of a plurality of function blocks through a transfer path using shift registers. When the reliability of fuse elements is low, there is a possibility that a part of...
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7522443 |
Flat-cell read-only memory structure
The integrated circuit memory comprises a memory array including a plurality of memory cells in rows and columns, the memory array being divided into a plurality of blocks of the memory cells. Each...
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7508693 |
One-time-programmable (OTP) memory device and method for testing the same
An OTP memory device and method for testing the same is disclosed. The memory device includes a number of memory cells and each memory cell has an initial threshold voltage. Each memory cell is...
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7505325 |
Low voltage low capacitance flash memory array
In a p-type flash memory array, separate programming and read bit lines are provided. The programming bit line is used only to program the floating gate transistors in the memory cells connected to...
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7505300 |
Nonvolatile semiconductor memory device using nonvolatile storage elements to which data can be written only once
A nonvolatile semiconductor memory device includes a nonvolatile storage element to which data is inhibited from being rewritten, a read operation control circuit which captures a read operation...
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7499355 |
High bandwidth one time field-programmable memory
A one-time field programmable (OTP) memory cell with related manufacturing and programming techniques is disclosed. An OTP memory cell in accordance with one embodiment includes at least one...
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7480166 |
Memory cell structure of metal programmable read only memory having bit cells with a shared transistor cell
A memory cell structure of a metal (or via) programmable ROM whereby a transistor is shared between bit cells of the programmable ROM. Such a memory cell structure may include: a word line; a bit...
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7466578 |
Methods and systems for read-only memory
One embodiment of the present invention relates to a read only memory (ROM) that includes a memory cell pair. The memory cell pair includes a first memory cell and a second memory cell that share a...
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7461371 |
General purpose memory compiler system and associated methods
An enhanced memory compiler system and associated methods are provided. In one example, a method for accessing a plurality of memory compiler units includes: prompting, via a multi-compiler...
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7457144 |
Memory device and method for verifying information stored in memory cells
A memory device comprises a plurality of first and second non-volatile memory cells arranged as an array. Each memory cell stores information. The memory device further comprises an access unit...
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7457143 |
Memory device with shared reference and method
A memory device has a first core memory array, a second core memory array, a third core memory array and a fourth core memory array, and a first common reference section for the first core memory...
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7443719 |
Superconducting circuit for high-speed lookup table
A high-speed lookup table is designed using Rapid Single Flux Quantum (RSFQ) logic elements and fabricated using superconducting integrated circuits. The lookup table is composed of an address...
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7443706 |
High-performance memory and related method
In memory array of a memory circuit, a discharging module and an auxiliary module are disposed on each column line. While accessing an objective memory unit on a column line of the memory, the...
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7440306 |
Method for programming one-time programmable memory of integrated circuit
A method for programming a one-time programmable memory of an integrated circuit includes the following steps: writing an instruction set into the one-time programmable memory via a first...
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7423905 |
Read-only memory using linear passive elements
A read-only memory (ROM) is disclosed that uses the presence or absence of linear passive electrical elements, such as resistors or capacitors, to encode zeros and ones, permitting a large-area ROM...
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7411833 |
Nitride trapping memory device and method for reading the same
A nitride trapping memory device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is...
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7411808 |
Method for reading ROM cell
A method for reading data stored in a multiple bit memory cell, the memory cell comprising a switch located within an array of switches arranged in columns and rows, each switch having a control...
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7388770 |
One-time programable memory with additional programming time to ensure hard breakdown of the gate insulating film
A nonvolatile semiconductor memory device includes a storage element which is programmed with information by breaking an insulating film by application of electrical stress to the storage element,...
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7386652 |
User-configurable pre-recorded memory
In a user-configurable pre-recorded memory (UC-PM), a user can select contents he is interested in, and pay copyright fees accordingly. With large capacity, low cost and great integratibility,...
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7382640 |
High-speed programmable ROM, memory cell structure therefor, and method for writing data on/reading data from the programmable ROM
A high-speed programmable ROM, a memory cell structure therefor, and a method for writing data on/reading data from the programmable ROM are provided. The programmable ROM system has a plurality of...
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7379332 |
Systems-on-chips including programmed memory cells and programmable and erasable memory cells
An integrated circuit memory device includes programmed memory cells and programmable and erasable memory cells. The memory device includes a first memory array block in which programmed memory...
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7356417 |
Methods, systems and computer program products for dynamic scheduling and matrix collecting of data about samples
Data is collected about samples that possess characteristics that change over time and that are contained in any array of containers arranged in a container spatial relationship. A matrix of cells...
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7355878 |
Programmable logic devices optionally convertible to one time programmable devices
Programmable logic devices (PLDs) that can be repeatedly erased and reprogrammed, e.g., during the testing and/or design phases, and then converted to one-time programmable (OTP) devices on a...
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7352604 |
Memory and driving method of the same
According to the invention, mounting area is decreased and yield is improved by decreasing the number of elements, and a memory with less burden on peripheral circuitry and a driving method thereof...
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7327594 |
Read-only memory with twisted bit lines
Bit lines (BL 0 , BL 0 R, BL 1 , BL 1 R, . . . ) of a ROM memory array with differential detection reading are arranged within two overlaid metallization levels so as to increase the read...
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7327593 |
ROM memory cell having defined bit line voltages
The invention relates to a ROM memory cell of a ROM memory, which provides a first predetermined potential or a second predetermined potential in the driven state at a memory cell output in a...
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7324397 |
Semiconductor integrated circuit
A semiconductor integrated circuit has a nonvolatile memory and a logic circuit which uses information stored in the nonvolatile memory to perform logical operation. The nonvolatile memory...
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7321502 |
Non volatile data storage through dielectric breakdown
A method is described that induced dielectric breakdown within a capacitor's dielectric material while driving a current through the capacitor. The current is specific to data that is being written...
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7319627 |
Memory device
A sense amplifier circuit for a non-volatile semiconductor memory device is used to output data written in a selected non-volatile memory cell and is constructed as a current mirror circuit...
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7317643 |
Semiconductor memory device
Disclosed herein is a semiconductor memory device which prevents the voltage of a select bit line from being reduced due to the action of coupling capacitance between the select bit line and a...
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7310261 |
Nitride read-only memory (NROM) device and method for reading the same
A nitride read-only memory (NROM) device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias...
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7302348 |
Method and system for quantifying and removing spatial-intensity trends in microarray data
A method and system for quantifying and correcting spatial-intensity trends for each channel of a microarray data set having one or more channels. The method and system of one embodiment of the...
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7298639 |
Reprogrammable electrical fuse
A electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse electro-migration effect. The state (i.e., “opened” or “closed”) of the...
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7283912 |
DNA probe design device and information processing method for DNA probe design
The number of times of manifestation of each of a plurality of partial base sequences obtained from own base sequence data containing a target base sequence is counted, and held as an own frequency...
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