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8755220 Hybrid superconducting-magnetic memory cell and array  
In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting...
8743578 Use of hydrocarbon nanorings for data storage  
Hydro-carbon nanorings may be used in storage. Sufficiently cooled, an externally hydrogen doped carbon nanoring may be used to create a radial dipole field to contain streams of electrons....
8547732 Hybrid superconducting-magnetic memory cell and array  
In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting...
8455966 Magnetic phase change logic  
Provided are transistor devices such as logic gates that are capable of associating a computational state and or performing logic operations with detectable electronic spin state and or magnetic...
8345947 Paper-sheet recognition apparatus  
A paper-sheet recognition apparatus recognizes a paper sheet, which is being transported, by using an optical line sensor and a magnetic line sensor. The paper-sheet recognition apparatus includes...
8208288 Hybrid superconducting-magnetic memory cell and array  
In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting...
7821839 Gain control for read operations in flash memory  
A technique for performing read operations with reduced errors in a memory device such as flash memory. An automatic gain control approach is used in which cells which have experienced data...
7760529 Systems and methods for digital transport of paramagnetic particles on magnetic garnet films  
Systems and methods are provided for digital transport of paramagnetic particles. The systems and methods may include providing a magnetic garnet film having a plurality of magnetic domain walls,...
7646627 Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance  
Between the value of an electric current and the supply duration for which the electric current is supplied that cause magnetization reversal, there is the relation of monotonous decrease. This...
7639771 Memory device with external magnetic field generator and method of operating and manufacturing the same  
A memory device with a magnetic field generator and method of operating and manufacturing the same. In the device and method, a magnetic memory may includes a magnetic tunneling junction (MTJ)...
7502244 Data storage device  
A data storage device for storing digital information in a readable form is described made up of one or more memory elements, each memory element comprising a planar magnetic conduit capable of...
7378698 Magnetic tunnel junction and memory device including the same  
A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one...
7365354 Programmable resistance memory element and method for making same  
A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode,...
7336515 Method of manipulating a quantum system comprising a magnetic moment  
A method for manipulating a quantum system comprises at least one mobile charge carrier with a magnetic moment. The method comprises the steps or acts of applying magnetic field to the charge...
7332781 Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same  
The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization...
7329935 Low power magnetoresistive random access memory elements  
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory...
7324386 Reliable method for erasing a flash memory  
A method for erasing a flash memory group is provided, which comprises the following steps. (a) Apply a erase (ERS) pulse to a first subset of the group. (b) Perform one of a soft program...
7295465 Thin film magnetic memory device reducing a charging time of a data line in a data read operation  
During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with...
7129098 Reduced power magnetoresistive random access memory elements  
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory...
7002820 Semiconductor storage device  
A semiconductor storage device including a tip electrode, a media electrode and a storage media. The storage media has a storage area configurable to be in one of a plurality of structural states...
6940750 Magnetic memory, magnetic memory array, method for fabricating a magnetic memory, method for recording in a magnetic memory and method for reading out from a magnetic memory  
A magnetic memory includes a magnetic substance composed of a disc-shaped first magnetic layer and a ring-shaped second magnetic layer which is formed on the first magnetic layer.
6940748 Stacked 1T-nMTJ MRAM structure  
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and...
6791857 Method and article for concentrating fields at sense layers  
A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed...
6744651 Local thermal enhancement of magnetic memory cell during programming  
A problem associated with the programming of MRAM (magnetic random access memory) has been that the required current is orders of magnitude larger than that needed for many other memory devices...
6657314 Manipulation-proof integrated circuit  
The integrated circuit has a circuit with information that is protected by a covering shielding level. A network with a large number of nodes is formed in the shielding level. Some of the nodes...
6438025 Magnetic memory device  
The invention described herein defines a system and a method for selectively controlling the sensitivity of a region of a magnetoresistive element to an incident magnetic field, by applying an...
6331944 Magnetic random access memory using a series tunnel element select mechanism  
A non-volatile memory array includes first and second pluralities of electrically conductive traces formed on a substrate. The second plurality of electrically conductive traces overlap first...
6166944 Data storing apparatus including integrated magnetic memory cells and semiconductor devices  
A data storing apparatus in which a magnetic storing means includes magnetic memory cells for memorizing data of a first value or a second value. Input data is written to the memory cells...
6005800 Magnetic memory array with paired asymmetric memory cells for improved write margin  
A nonvolatile magnetic memory array uses magnetic memory cells that are formed in two types of shapes. The cells lie at the intersections of rows and columns of electrically conductive lines,...
5898605 Apparatus and method for simplified analog signal record and playback  
A complete voice record and playback system capable of being powered by a single 1.8 VDC battery is operated in either stand-alone or CPU modes. In the stand-alone mode, two-button operation...
5754465 No physical movement component record reproduce device and flat display device  
A non-physical movement component recording and reproducing device produces a pair of special waves with special waveforms that form a special stationary waveform. An electrically-conducting media...
5329486 Ferromagnetic memory device  
A ferromagnetic memory circuit (10) and a ferromagnetic memory device (15) which has a substrate (42). Within the substrate (42), a first current electrode (44) and a second current electrode (46)...
4772505 Magnetic bubble memory element  
The inclination angle, in the conductor pattern end portion of a magnetic bubble memory element having a bubble diameter of up to 1.2 μm, can be remarkably reduced by employing a polymer resin,...
4755430 Magnetic bubble memory device  
A hybrid magnetic bubble memory device comprising soft magnetic material propagation tracks and ion-implanted propagation tracks. In the soft magnetic material propagation track region, a layer...
4701385 Ion-implanted magnetic bubble device and a method of manufacturing the same  
In a magnetic bubble device, a strain layer formed on the surface of a magnetic bubble garnet film by ion-implantation is required to have anisotropy field of great strength in the in-plane...
4622264 Garnet film for magnetic bubble memory element  
A garnet film for use in magnetic bubble devices that supports magnetic bubbles with a bubble diameter of 0.4 micron or less. The curie temperature can be made over 240° C., and the garnet film...
4568618 Magnetic bubble memory chip  
In order for the temperature dependence of the strip out field of a magnetic garnet crystal film (54) to match the temperature dependence of the residual magnetization of a permanent magnet (56)...
4532180 Garnet film for ion-implanted magnetic bubble device  
The invention relates to a garnet film for an ion-implanted device characterized in that the quantity of Fe is increased and a predetermined quantity of Gd is added.The garnet film of the...
4520460 Temperature stable magnetic bubble compositions  
Certain Tm-containing iron garnet compositions provide layers having desirably high values of Curie temperature and magnetic anisotropy and permit the fabrication of devices having 1.2 μm diameter...
4468438 Garnet epitaxial films with high Curie temperatures  
The use of vanadium on the tetrahedral site of a garnet material together with a suitable charge compensating ion, such as Ca2+, results in advantageous materials. In particular, very high Curie...
4460412 Method of making magnetic bubble memory device by implanting hydrogen ions and annealing  
A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are...
4454206 Magnetic device having a monocrystalline garnet substrate bearing a magnetic layer  
Magnetic device having a monocrystalline substrate bearing a magnetic layer, said substrate having a composition on the basis of rare earth metal gallium garnet of the general formula ##STR1##...
4435484 Device for propagating magnetic domains  
A device for propagating magnetic domains includes a monocrystalline nonmagnetic substrate of a rare earth gallium garnet bearing a layer of an iron garnet capable of supporting local enclosed...
4434212 Device for propagating magnetic domains  
A device for propagating magnetic domains, comprising a monocrystalline nonmagnetic substrate of a material having a garnet structure, and a layer of an iron garnet grown epitaxially on the...
4433034 Magnetic bubble layer of thulium-containing garnet  
Certain Tm-containing iron garnet compositions provide layers having desirably low values of temperature coefficient of bubble collapse field and permit the fabrication of 1.2 μm diameter magnetic...
4414290 Magnetic structure suitable for the propagation of single-walled magnetic domains  
A magnetic structure in which magnetic domains can propagate. The structure comprises a monocrystalline gallium garnet substrate having a surface which is substantially parallel to a (100) crystal...
4354254 Devices depending on garnet materials  
Devices based on epitaxial garnet layers that exhibit a high magnetic anisotropy are disclosed. These garnet layers are produced by introducing a Co2+ or a species with 1, 2, 4, or 5 electrons in...
4338372 Garnet film for magnetic bubble device  
A magnetic garnet film for a magnetic bubble memory device in which parts of rare earth element and iron are replaced by predetermined quantities of Gd and Ge, respectively. The garnet film...
4337521 Advantageous garnet based devices  
Devices based on epitaxial garnet layers which exhibit a substantial contribution to the magnetic anisotropy other than that attributable to the presence of magnetic rare earth ions are disclosed....
4323618 Single crystal of calcium-gallium germanium garnet and substrate manufactured from such a single crystal and having an epitaxially grown bubble domain film  
A novel non-magnetic monocrystalline garnet substrate material in the form of calcium--gallium-germanium garnet. Single crystals of calcium-gallium-germanium garnet can be grown at mush lower...

Matches 1 - 50 out of 196 1 2 3 4 >