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8687413 Magnetic memory with phonon glass electron crystal material  
A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing...
8675401 Spin-transfer torque memory self-reference read method  
A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read...
8416614 Spin-transfer torque memory non-destructive self-reference read method  
A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage....
8411495 Spin-transfer torque memory self-reference read method  
A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read...
8400867 Non-volatile memory with stray magnetic field compensation  
A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling...
8374048 Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy  
A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The...
8358531 Unidirectional spin torque transfer magnetic memory cell structure  
Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned...
8331139 Increased magnetic damping for toggle MRAM  
Magnetic random access memory (MRAM) devices and techniques for use thereof are provided. In one aspect, a magnetic memory cell is provided. The magnetic memory cell comprises at least one fixed...
8325513 Compound cell spin-torque magnetic random access memory  
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals...
8248840 Magnetoresistive random access memory (MRAM) with integrated magnetic film enhanced circuit elements  
A Magnetoresistive Random Access Memory (MRAM) integrated circuit includes a substrate, a magnetic tunnel junction region, a magnetic circuit element, and an integrated magnetic material. The...
8116123 Spin-transfer torque memory non-destructive self-reference read method  
A spin-transfer torque memory apparatus and non-destructive self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a...
8116124 Compound cell spin-torque magnetic random access memory  
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals...
8116122 Spin-transfer torque memory self-reference read method  
A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read...
8102703 Magnetic element with a fast spin transfer torque writing procedure  
A magnetic tunnel junction, including a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the...
8098541 Non-volatile memory with stray magnetic field compensation  
A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling...
8081394 Information recording apparatus and method, information reproducing method and fade-in memory, with summary information corresponding to plurality of information recording elements  
An information recording apparatus has a plurality of fine particles forming an array on a plane in close proximity of each other, each of the plural particles including a ferromagnetic metal, a...
8077503 Electronic devices utilizing spin torque transfer to flip magnetic orientation  
Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer;...
8077502 Electronic devices utilizing spin torque transfer to flip magnetic orientation  
Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer;...
8004881 Magnetic tunnel junction device with separate read and write paths  
In an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path coupled to the MTJ structure and a write path coupled to the...
7995383 Magnetic tunnel junction cell adapted to store multiple digital values  
A particular magnetic tunnel junction (MTJ) cell includes a side wall defining a first magnetic domain adapted to store a first digital value. The MTJ cell also includes a bottom wall coupled to...
7995378 MRAM device with shared source line  
In a particular embodiment, a memory device includes a first memory cell and a second memory cell. The memory device also includes a first bit line associated with the first memory cell and a...
7961491 Data storage device using magnetic domain wall movement and method of operating the same  
Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality...
7957181 Magnetic tunnel junction magnetic memory  
This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least: one magnetic...
7952918 Method of operating a magnetoresistive RAM  
A magnetoresistive random access memory (RAM) may include a plurality of variable resistance devices, a plurality of read bitlines electrically connected to respective variable resistance devices,...
7940600 Non-volatile memory with stray magnetic field compensation  
A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling...
7936597 Multilevel magnetic storage device  
The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a...
7933146 Electronic devices utilizing spin torque transfer to flip magnetic orientation  
Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer;...
7920416 Increased magnetic damping for toggle MRAM  
Magnetic random access memory (MRAM) devices and techniques for use thereof are provided. In one aspect, a magnetic memory cell is provided. The magnetic memory cell comprises at least one fixed...
7916520 Memory cell and magnetic random access memory  
A memory cell is used which includes a plurality of magneto-resistive elements and a plurality of laminated ferrimagnetic structure substances. The plurality of the magneto-resistive elements are...
7898849 Compound cell spin-torque magnetic random access memory  
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals...
7869265 Magnetic random access memory and write method of the same  
A magnetic random access memory includes a first interconnection extending to a first direction, a second interconnection extending to a second direction perpendicular to the first direction, a...
7859881 Magnetic memory device and write/read method of the same  
A magnetic memory device includes a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell, a...
7852662 Spin-torque MRAM: spin-RAM, array  
A spin-torque MRAM array has MRAM cells arranged in rows and columns. Bit lines are connected to each of the MRAM cells on each column. Source select lines are connected to each MRAM cell of a...
7826174 Information recording method and apparatus using plasmonic transmission along line of ferromagnetic nano-particles with reproducing method using fade-in memory  
An information recording apparatus comprises a plurality of fine particles forming an array on a plane in close proximity of each other, each of the plural particles including a ferromagnetic...
RE41693 Magnetic switching of charge separation lifetimes in artificial photosynthetic reaction centers  
Excitation of a triad artificial photosynthetic reaction center consisting of a porphyrin (P) convalently linked to a fullerene electron acceptor (C60) and a carotenoid secondary donor (C) leads...
7791929 Magnetoresistive RAM and associated methods  
A magnetoresistive random access memory (RAM) may include a plurality of variable resistance devices, a plurality of read bitlines electrically connected to respective variable resistance devices,...
7787289 MRAM design with local write conductors of reduced cross-sectional area  
Embodiments of the present invention disclose an MRAM device having a plurality of magnetic memory cells grouped into words, and write conductors for carrying write currents to write to the memory...
7782663 Data storage device using magnetic domain wall movement and method of operating the data storage device  
A data storage device includes a magnetic layer having a plurality of magnetic domains, a write head provided at an end portion of the magnetic layer, a read head to read data written to the...
7764539 Spin transfer MRAM device with separated CPP assisted writing  
A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a...
7751235 Semiconductor memory device and write and read methods of the same  
A semiconductor memory device includes first to fourth resistance change elements sequentially arranged apart from each other in a first direction, a first electrode which connects one terminals...
7668005 Magnetic memory  
A magnetic memory includes a plurality of magnetoresistive elements which include a fixed layer in which a magnetization direction is fixed, a free layer in which a magnetization direction...
7626857 Current induced magnetoresistance device  
Provided is a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic...
7613035 Magnetic memory device and method of writing into the same  
A magnetic memory device includes a memory cell including magnetoresistance effect elements MTJ1, MTJ2 and a select transistor connected to the connection node of the magnetoresistance effect...
7525862 Methods involving resetting spin-torque magnetic random access memory with domain wall  
A method for resetting a spin-transfer based random access memory system, the method comprising, inducing a first current through a first conductor, wherein the first current is operative to...
7372757 Magnetic memory device with moving magnetic domain walls  
A magnetic memory device includes a plurality of first metal lines arranged in parallel on a substrate and including a plurality of magnetic domains with variable magnetization directions. A...
7145796 Semiconductor integrated circuit device  
A semiconductor integrated circuit device includes a magneto-resistive effect element and a plug. The magneto-resistive effect element includes a first magnetic layer whose magnetization direction...
7068530 Magnetoresistive effect element and memory device using the same  
One block SB serving as a fundamental unit constituting a data reading circuit is constituted by four memory cells MS1 to MS4 connected electrically in series, four FETs S1 to S4 connected in...
7054185 Optimized MRAM current sources  
A word current source (445) for a magnetoresistive random access memory circuit (420) includes an n-channel transistor (430) including a gate, a source and a drain, where the source is coupled to...
6826321 Magnetic switching of charge separation lifetimes in artificial photosynthetic reaction centers  
Excitation of a triad artificial photosynthetic reaction center consisting of a porphyrin (P) convalently linked to a fullerene electron acceptor (C60) and a carotenoid secondary donor (C) leads...
6762952 Minimizing errors in a magnetoresistive solid-state storage device  
Exemplar embodiments are disclosed which allow errors in a magnetoresistive solid-state storage device, such as a magnetic random access memory (MRAM) device, to be minimized. An illustrative...

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