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7626857 Current induced magnetoresistance device  
Provided is a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic...
7619936 System that prevents reduction in data retention  
One embodiment of the present invention provides a system including a tester and a back end manufacturing system. The tester tests a resistive memory and obtains configuration data for the...
7613035 Magnetic memory device and method of writing into the same  
A magnetic memory device includes a memory cell including magnetoresistance effect elements MTJ 1 , MTJ 2 and a select transistor connected to the connection node of the magnetoresistance effect...
7586776 Nonvolatile memory devices having multi-filament variable resistivity memory cells therein  
There is provided a resistive memory device, the device including: a plurality of word lines and a plurality of bit lines arranged such that the word lines intersect the bit lines; a plurality of...
7525862 Methods involving resetting spin-torque magnetic random access memory with domain wall  
A method for resetting a spin-transfer based random access memory system, the method comprising, inducing a first current through a first conductor, wherein the first current is operative to...
7505308 Systems involving spin-transfer magnetic random access memory  
An exemplary magnetic random access memory system comprising, a spin-current generating portion including, a ferromagnetic film layer, and a conductance layer, a first write portion in electrical...
7504266 Magnetic tunnel junction structures and methods of fabrication  
A method for forming an MTJ structure suitable for use in a MRAM device having a bottom electrode including a layer of platinum, ruthenium, iridium, rhodium, osmium, palladium or their oxides and...
7480744 Method and apparatus for one time programming  
A programmable system for storage of one-time programmable information comprises an interface translator and a one-time programmable device. The interface translator receives and translates a...
7411854 System and method for controlling constant power dissipation  
A method for controlling the constant power dissipation of a memory cell includes initially measuring the resistance of the memory cell, and subsequently controlling a source to apply a variable...
7394683 Solid state magnetic memory system and method  
A solid state magnetic memory system and method disposes an array of magnetic media cells in an array on a substrate. In an exemplary embodiment, drive electronics are fabricated into the substrate...
7372757 Magnetic memory device with moving magnetic domain walls  
A magnetic memory device includes a plurality of first metal lines arranged in parallel on a substrate and including a plurality of magnetic domains with variable magnetization directions. A...
7362644 Configurable MRAM and method of configuration  
A configurable MRAM device is achieved. The device comprises a memory array of magnetic memory cells. A first part of the array comprises the memory cells that can be accessed for reading and...
7332781 Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same  
The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction ( 60 ), comprising: a magnetic layer, called trapped layer ( 61 ), whereof the...
7329935 Low power magnetoresistive random access memory elements  
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory...
7298643 MRAM element  
A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two...
7289365 Nonvolatile semiconductor memory device in which write and erase threshold voltages are set at levels symmetrical about neutral threshold voltage of cell transistor  
A semiconductor device includes a memory cell and driver. The memory cell has a cell transistor which has one end of a current path connected to a bit line and stores data by storing charges in a...
7239570 Magnetic memory device and method for magnetic reading and writing  
Disclosed herein are a magnetic memory device and method for storing and retrieving data. The magnetic memory device includes a read disk and a storage disk. The read disk comprises of an array of...
7230845 Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices  
A method and system for providing a magnetic memory device are disclosed. The method and system include providing a magnetic element that includes a data storage layer having at least one easy axis...
7180769 World line segment select transistor on word line current source side  
The word line segment select transistor of a segmented word line array is placed on the word line current source side. This eliminates many undesirable effects currently associated with segmented...
7170778 High speed low power magnetic devices based on current induced spin-momentum transfer  
The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and...
7154773 MRAM cell with domain wall switching and field select  
An MRAM cell includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship and separated by a non-magnetic tunneling barrier layer....
7145796 Semiconductor integrated circuit device  
A semiconductor integrated circuit device includes a magneto-resistive effect element and a plug. The magneto-resistive effect element includes a first magnetic layer whose magnetization direction...
7133307 Resistive memory element sensing using averaging  
A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge...
7129555 Magnetic memory with write inhibit selection and the writing method for same  
The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction ( 70 ) consisting...
7129098 Reduced power magnetoresistive random access memory elements  
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory...
7110288 Thin film magnetic memory device having redundant configuration  
Normal memory cells are arranged in rows and columns, and dummy memory cells are arranged to form dummy memory cell rows by sharing memory cell columns with the normal memory cells. When there is...
7102919 Methods and devices for determining writing current for memory cells  
Methods for determining writing current for memory cells. A first reference current is applied to a first operative line to switch the memory cell to a first state. A second reference current is...
7095649 Semiconductor integrated circuit device  
A semiconductor integrated circuit device includes a main memory cell array, redundant memory cell array, write current source, a common node connected to the write current source, a first selector...
7082053 Non-volatile latch with magnetic junctions  
A memory storage circuit is provided which includes a plurality of magnetic elements each configured to store bits in a first or a second logic state. The storage circuit may further include a...
7054185 Optimized MRAM current sources  
A word current source ( 445 ) for a magnetoresistive random access memory circuit ( 420 ) includes an n-channel transistor ( 430 ) including a gate, a source and a drain, where the source is...
6992923 Single transistor type magnetic random access memory device and method of operating and manufacturing the same  
A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes...
6985385 Magnetic memory element utilizing spin transfer switching and storing multiple bits  
A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first...
6980477 Chopper sensor for MRAM  
A sensor for a magnetic random-access memory (MRAM) of an embodiment of the invention includes an amplifier having at least two inputs and at least two outputs. The inputs are coupled to a magnetic...
6975555 Magnetic random access memory using memory cells with rotated magnetic storage elements  
A magnetic random access memory circuit comprises a plurality of magnetic memory cells, each of the memory cells including a magnetic storage element having an easy axis and a hard axis associated...
6967386 Magnetic memory device  
A magnetic memory device can information with a low power consumption by inhibiting the coercive force from being increased by a demagnetizing field in a free layer, regardless of the thickness,...
6961264 Semiconductor integrated circuit device  
A semiconductor integrated circuit device has a semiconductor substrate comprising a first region extending along the edge and a second region surrounded by the first region. Memory cell arrays are...
6947318 Magnetic random access memory  
An information storage portion which stores tuning information is constituted by a plurality of magnetic elements & latch circuits. Each of the magnetic elements & latch circuits has two...
6909633 MRAM architecture with a flux closed data storage layer  
A method and system for providing and using a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and providing at least one magnetic write...
6842389 System for and method of four-conductor magnetic random access memory cell and decoding scheme  
A four-conductor MRAM device comprising an array of memory cells, each of the memory cells including a first magnetic layer, a dielectric, and a second magnetic layer; a plurality of local column...
6826321 Magnetic switching of charge separation lifetimes in artificial photosynthetic reaction centers  
Excitation of a triad artificial photosynthetic reaction center consisting of a porphyrin (P) convalently linked to a fullerene electron acceptor (C 60 ) and a carotenoid secondary donor (C) leads...
6809981 Wordline driven method for sensing data in a resistive memory array  
A memory device having an array of resistive memory cells with row lines that are maintained at ground potential during quiescent operation of the device. During a read operation, one of the row...
6801451 Magnetic memory devices having multiple bits per memory cell  
A memory cell of a data storage device includes serially-connected first and second magnetoresistive devices. The first magnetoresistive device has first and second resistance states. The second...
6785154 MRAM and access method thereof  
A magnetic random access memory (MRAM) circuit block and access method thereof are disclosed herein which includes a circuit for sensing a data write current passing through a bitline 32 and, for...
6781910 Small area magnetic memory devices  
The present disclosure relates to a magnetic memory device. In one embodiment, the magnetic memory device comprises a plurality of memory cells, and a plurality of write conductors adjacent the...
6751147 Method for adaptively writing a magnetic random access memory  
A method of adaptively writing magnetic memory cells of a MRAM is disclosed according to an embodiment of the present invention. The method comprises providing a logical data block of a memory...
6744662 Magnetoresistive memory (MRAM)  
The form of leads of a cell array of a multiplicity of magnetic memory cells is optimized by deviating from a square cross section of the leads in such a way that the magnetic field component of...
6687179 Method and system for writing data in an MRAM memory device  
An MRAM array includes a plurality of memory cells arranged in rows and columns are programmed, each memory cell in a respective row being coupled to a corresponding word line and each memory cell...
6683815 Magnetic memory cell and method for assigning tunable writing currents  
A circuit is provided herein, which is adapted to supply different current magnitudes along opposing directions of a conductive line. Such a circuit may be particularly beneficial in compensating...
6674663 Nonvolatile storage device and operating method thereof  
A nonvolatile storage device and method of operation capable of preventing opens in a word line and/or bit line that may result from electromigration is disclosed. A nonvolatile storage device...
6667899 Magnetic memory and method of bi-directional write current programming  
A magnetic memory ( 400 ) is programmed by selectively conducting current in opposite directions in both word and bit lines to reduce electromigration effects in word lines and bit lines. Various...
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