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7619934 |
Method and apparatus for adaptive memory cell overerase compensation
A method and apparatus are provided for adaptive memory cell overerase compensation. A semiconductor memory device ( 100 ) is provided for performing the adaptively compensating erase verify...
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7606100 |
Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
A set of non-volatile storage elements is divided into subsets for erasing in order to avoid over-erasing faster erasing storage elements. The entire set of elements is erased until a first subset...
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7599225 |
Method of programming and erasing a non-volatile memory array
A method of processing an array of non-volatile memory cells to program or erase the same, by applying a voltage to the same through a program and verify pulse application circuit. The process...
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7571277 |
Semiconductor memory system for flash memory
Provided is a semiconductor memory system including a plurality of main memory chips and sub-memory chips as alternatives, in which each main memory chip includes a plurality of reserved memory...
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7570533 |
Completely transportable erasable memory apparatus and method
The present invention relates to methods and apparatuses for providing data storage which can be completely erased to prevent access to previously stored data.
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7564720 |
Nonvolatile storage and erase control
A nonvolatile storage including a plurality of blocks each serving as one unit in erasing operation and performs a plurality of erasing operations successively, the nonvolatile storage comprising:...
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7552272 |
Automated wear leveling in non-volatile storage systems
Methods and apparatus for performing wear leveling in a non-volatile memory system are disclosed. Included is a method for performing wear leveling in a memory system that includes a first zone,...
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7535771 |
Devices and methods to improve erase uniformity and to screen for marginal cells for NROM memories
A NROM memory device includes an array of memory cells and first and second bit lines. The first and second bit lines are coupled to opposite sides of the memory cells. During an erase operation,...
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7532531 |
Flash memory device and multi-block erase method
In a flash memory device, a multi-block erase operation is performed by applying stepwise increasing erase voltages to selected memory blocks during a first erase period and then applying fixed...
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7525851 |
Row decoder circuit and related system and method
A row decoder circuit is described of the type comprising at least one input stage connected to a first supply voltage reference and to an output stage connected to a second supply voltage...
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7515500 |
Memory device performance enhancement through pre-erase mechanism
The specification and drawings present a new method, apparatus and software product for performance enhancement of a memory device (e.g., a memory card) using a pre-erase mechanism. The memory...
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7499325 |
Flash memory device with improved erase operation
Some embodiments include a device having memory cells coupled to a well of a semiconductor substrate, and a select transistor coupled between the memory cells and a bit line of the device. The...
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7468926 |
Partial erase verify
A method for erasing memory cells in a memory array, the method including applying an erase pulse to bits of a cell ensemble of a memory cell array, and performing an erase verification operation...
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7457166 |
Erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
The erase voltage applied to a set of non-volatile storage elements being erased is structured to provide controlled shifts in the threshold voltage of the storage elements. The erase voltage is...
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7457146 |
Memory cell programmed using a temperature controlled set pulse
A memory device includes a phase change memory cell and a circuit. The circuit is for programming the memory cell to a selected one of more than two states by applying a temperature controlled set...
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7443746 |
Memory array tester information processing system
A memory array tester information processing system includes executing a generation block to gather drain currents and gate voltages information for a memory array, utilizing an extraction block to...
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7403430 |
Erase operation for use in non-volatile memory
A sector erase method for use in a non-volatile memory, such as a FLASH memory, including a plurality of memory cells in rows and columns, the memory cells being divided into a plurality of...
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7400537 |
Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
A set of non-volatile storage elements is divided into subsets for erasing in order to avoid over-erasing faster erasing storage elements. The entire set of elements is erased until a first subset...
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7398348 |
Method and apparatus for using a one-time or few-time programmable memory with a host device designed for erasable/rewritable memory
The embodiments described herein can be used to enable one-time or few-time programmable memories to work with existing consumer electronic devices (such as those that work with flash—an...
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7394702 |
Methods for erasing and programming memory devices
A dual-bit memory device includes a first charge storage region spaced apart from a second charge storage region by an isolation region. Techniques for erasing a memory can be provided in which...
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7392444 |
Non-volatile memory evaluating method and non-volatile memory
The present method generates a greater number of hot holes than those generated by normal write/erase operations, thereby making it possible to evaluate an operation of a non-volatile memory with...
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7376028 |
Semiconductor memory device and method for reading semiconductor memory device
A semiconductor memory device having a dummy memory cell and a reading method of the same, wherein provision is made of a memory cell 11 connected to a word line WL and a pair of bit lines BL and...
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7372754 |
Method and apparatus for controlling slope of word line voltage in nonvolatile memory device
A nonvolatile memory device includes a nonvolatile memory cell array including a plurality of nonvolatile memory cells connected to a plurality of word lines, a word line voltage generator...
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7366020 |
Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof
We describe a NAND flash memory device including a memory cell array formed on a substrate including a plurality of cell strings each including a string selecting transistor, a ground selecting...
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7359251 |
Non-volatile semiconductor memory device, erase method for same, and test method for same
A non-volatile semiconductor memory device includes a memory cell array and an operation control circuit. The memory cell array includes a plurality of non-volatile memory cells that are...
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7356661 |
Control of information reproduction and deletion in a library apparatus
An information recording/reproduction apparatus according to one aspect of this invention includes a first recording/reproduction unit configured to execute recording, reproduction, and deletion of...
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7333380 |
SRAM memory device with flash clear and corresponding flash clear method
A static memory device includes at least one memory cell with two cross-coupled CMOS inverters to be connected to first and second voltages. The substrate of the NMOS transistor of a first CMOS...
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7324385 |
Molecular memory
Molecular memories, i.e., memories that incorporate molecules for charge storage, are disclosed. Molecular memory cells, molecular memory arrays, and electronic devices including molecular memory...
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7280421 |
Non-volatile memory cell integrated with a latch
A configuration circuit includes a latch and a dedicated non-volatile memory cell. The non-volatile memory cell is initially programmed or erased. The latch is then set to store a first logic value...
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7277979 |
Microcomputer with mode-controlled memory
A microcomputer capable of on-board programming of dedicated user communication protocols without requiring a serial interface on the mounted board, and that will not destroy the dedicated user...
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7277327 |
Methods for erasing flash memory
Methods for erasing flash memory using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.
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7260697 |
Data storage device and method of erasing data stored in the data storage device
A recording medium stores data supplied from an external device. A memory stores an erase program for executing erasing of the data stored in the recording medium. An erasing unit erases the data...
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7249109 |
Shielding manipulations of secret data
This invention concerns a method of shielding manipulations of secret data in an authentication chip from observation. In another aspect it concerns an authentication chip for performing the...
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7245556 |
Methods for writing non-volatile memories for increased endurance
A memory system that incorporates methods of amplifying the lifetime of a counter made up of memory elements, such as EEPROM cells, having finite endurance. A relatively small memory made up of a...
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7242632 |
Memory device, memory managing method and program
A memory device, performs fast data renewal and erasure, and is not easily degraded. In the memory area of a flash memory, each block is divided into physical pages and each physical pages is...
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7193916 |
Apparatus and method for determining erasability of data
A recording apparatus for facilitating data erasure operations involving data recorded on a recording medium. Each piece of data recorded on the recording medium may be examined to determine...
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7187593 |
Control system; control apparatus; storage device and computer program product
A reading/writing process control unit for instructing a reading/writing process and an erasing process control unit for instructing an erasing process are provided separately and each is connected...
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7180777 |
System and method for destructive purge of memory device
A memory purge system destructively purges the memory circuits of a memory device. The system includes a power supply for supplying a selectable voltage and current. Switching circuits electrically...
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7180776 |
Systems and methods for programming a secured CPLD on-the-fly
On-the-fly reconfiguration of a secured CPLD. In one embodiment, a CPLD includes a novel security circuit that provides two different security control signals: an EEPROM/SRAM security signal and an...
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7164610 |
Microcomputer having a flush memory that can be temporarily interrupted during an erase process
A microcomputer with a built-in non-volatile semiconductor memory, which can automatically perform a work of temporarily interrupting automatic writing or automatic erase and accepting an...
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7161842 |
Flash memory device and method of erasing flash memory cell thereof
A flash memory device and method of erasing flash memory cells thereof are provided. The erase of a cell block unit or a page unit is effected by a word line switch included in a predecoder...
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7158416 |
Method for operating a flash memory device
An error correction code is applied and an erasing procedure is passed as accomplished, if a maximum number of single bit failures in compliance with a criterion of the error correction code is not...
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7139202 |
Semiconductor storage device, mobile electronic apparatus, and method for controlling the semiconductor storage device
A semiconductor storage device is provided, which comprises a memory array comprising memory elements, a write state machine for applying a first voltage for performing a write or erase operation,...
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7139195 |
EEPROM memory comprising a non-volatile register integrated into the memory array thereof
An electrically erasable and programmable memory includes a memory array and a non-volatile register integrated with the memory array. The memory array includes normal memory cells arranged in rows...
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7130240 |
Semiconductor memory system and method for multi-sector erase operation
A semiconductor memory device is operable with a multi-sector erase mode for a multiplicity of memory chips, including a cell array, a register circuit containing information for a sector to be...
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7123532 |
Operating array cells with matched reference cells
A method for reading a bit of a memory cell in a non-volatile memory (NVM) cell array, the method comprising providing a memory cell comprising a bit to be read and at least one other bit not to be...
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7123529 |
Sense amplifier including multiple conduction state field effect transistor
An integrated circuit is provided which includes a sensing circuit. In the sensing circuit, a pair of conductors including a first conductor and a second conductor are adapted to conduct a first...
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7123515 |
Semiconductor integrated circuit adapted to output pass/fail results of internal operations
In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the...
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7120729 |
Automated wear leveling in non-volatile storage systems
Methods and apparatus for performing wear leveling in a non-volatile memory system are disclosed. Included is a method for performing wear leveling in a memory system that includes a first zone,...
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7116584 |
Multiple erase block tagging in a flash memory device
A plurality of memory devices can be erase block tagged in parallel by issuing an erase pulse to memory devices that do not have memory blocks with erase block latches that indicate the block is...
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