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8179716 |
Non-volatile programmable logic gates and adders
Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output...
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8159871 |
Magnetoresistive memory cell using floating body effect, memory device having the same, and method of operating the memory device
A magnetoresistive memory cell includes an MTJ device and a select transistor. The select transistor includes a first conduction-type semiconductor layer, a gate electrode formed by disposing a...
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8154917 |
Magnetic storage device
A magnetic storage device includes a plurality of MRAM memory cells connected to a data transfer line, a clamp transistor connected between the data transfer line and a reading signal line and...
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8144504 |
Method of operating magnetic random access memory device
Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the...
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8111572 |
Disturb control circuits and methods to control memory disturbs among multiple layers of memory
Embodiments of the invention relate generally to data storage and computer memory, and more particularly, to systems, integrated circuits and methods for controlling memory disturbs to and among...
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8102703 |
Magnetic element with a fast spin transfer torque writing procedure
A magnetic tunnel junction, including a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the...
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8077508 |
Dynamic multistate memory write driver
A circuit includes, in part, a multitude of magnetic random access memory cells, one or more column decoders, one or more row decoders, and a write driver circuit. The write driver circuit is...
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8059480 |
Semiconductor memory device
A semiconductor memory device includes a plurality of memory cells configured to correspond to each of a plurality of word lines for storing data; a plurality of reference memory cells configured...
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8054706 |
Sensor protection using a non-volatile memory cell
A method and apparatus for protecting an electrical device using a non-volatile memory cell, such as an STRAM or RRAM memory cell. In some embodiments, a memory element is connected in parallel...
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7978542 |
Thin film magnetic memory device writing data with bidirectional current
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are...
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7969805 |
Coupling methods and architectures for information processing
A structure comprising (i) a first information device, (ii) a second information device, (iii) a first coupling element and (iv) a second coupling element is provided. The first information device...
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7936627 |
Magnetoresistance effect element and MRAM
A magnetoresistance effect element according to the present invention comprises a magnetization free layer 1 and a magnetization fixed layer 3 connected to the magnetization free layer 1 through a...
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7931976 |
Magnetic recording element
A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first...
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7929334 |
In-situ resistance measurement for magnetic random access memory (MRAM)
A method of measuring resistance of a magnetic tunnel junction (MTJ) of an MRAM memory cell includes applying a voltage of a selected level to a memory cell comprising an MTJ in series with a...
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7920416 |
Increased magnetic damping for toggle MRAM
Magnetic random access memory (MRAM) devices and techniques for use thereof are provided. In one aspect, a magnetic memory cell is provided. The magnetic memory cell comprises at least one fixed...
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7881138 |
Memory circuit with sense amplifier
A memory has a pre-amplifier for generating an output signal and a reference signal. The memory includes a comparator for comparing the output signal to the reference signal. The comparator...
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7876604 |
Stram with self-reference read scheme
Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a...
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7877244 |
Simulation circuit of toggle magnetic tunnel junction (MTJ) element
A simulating circuit for simulating a toggle magnetic tunneling junction (MTJ) element includes at least a synthetic Anti-Ferromagnetic free layer, a tunnel barrier layer, and a synthetic...
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7872904 |
Magnetic random access memory
A magnetic random access memory (MRAM) including multiple memory cells for forming an array is provided. Each memory cell has a magnetic free stack layer and a pinned stack layer. A magnetization...
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7864564 |
Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
Between the value of an electric current and the supply duration for which the electric current is supplied that cause magnetization reversal, there is the relation of monotonous decrease. This...
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7855911 |
Reconfigurable magnetic logic device using spin torque
Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element,...
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7852663 |
Nonvolatile programmable logic gates and adders
Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output...
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7813202 |
Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device
A thin-film magnetic device comprises, on a substrate, a composite assembly deposited by cathode sputtering and consists of a first layer made of a ferromagnetic material with a high rate of spin...
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7800937 |
Method for switching magnetic moment in magnetoresistive random access memory with low current
A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second...
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7796423 |
Reconfigurable logic circuit
It is made possible to provide a reconfigurable logic circuit with which high integration can be achieved. A reconfigurable logic circuit includes: a multiplexer which includes a plurality of spin...
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7755965 |
Temperature dependent system for reading ST-RAM
A memory device that includes at least one memory cell, the memory cell includes: a magnetic tunnel junction (MTJ); and a transistor, wherein the transistor is operatively coupled to the MTJ; a bit...
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7751258 |
Magnetic random access memory
A magnetic random access memory includes a memory cell having a first magnetoresistive effect element, a reference cell having a second magnetoresistive effect element set in a low-resistance...
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7742329 |
Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can...
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7733729 |
Thermally stable reference voltage generator for MRAM
A non volatile memory device comprises memory cells such as MRAM cells, reading circuits and a reference cell for generating a reference for use by the reading circuits, and can determine if the...
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7733692 |
Thin film magnetic memory device capable of conducting stable data read and write operations
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied...
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7688615 |
Magnetic random access memory, manufacturing method and programming method thereof
A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided. The magnetic random access memory comprises a first magnetic tunnel junction...
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7616477 |
Non-volatile magnetic memory device
A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write...
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7596045 |
Design structure for initializing reference cells of a toggle switched MRAM device
A design structure embodied in a machine readable medium used in a design process includes an apparatus for initializing a reference cell in a toggle switched MRAM device, with a first sense...
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7535783 |
Apparatus and method for implementing precise sensing of PCRAM devices
A precision sense amplifier apparatus includes a current source configured to introduce an adjustable reference current through a reference leg; a current mirror configured to mirror the reference...
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7536612 |
Field spike monitor for MRAM
A method for monitoring field events in an MRAM memory device comprises providing a first magnetic storage cell having a switching threshold less than or equal to a switching threshold of a second...
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7532533 |
Antifuse circuit and method for selectively programming thereof
An antifuse circuit provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse has been previously programmed to a low resistance state in response to a...
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7505347 |
Method for sensing a signal in a two-terminal memory array having leakage current
A two-terminal memory array includes a plurality of first and second conductive traces. An address unit operatively applies a select voltage across a selected pair of the first and second...
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7436723 |
Method for two-cycle sensing in a two-terminal memory array having leakage current
A two-terminal memory array includes a plurality of first and second conductive traces. An address unit operatively applies a select voltage across a selected pair of the first and second...
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7436697 |
Memory cell, memory using the memory cell, memory cell manufacturing method, and memory recording/reading method
A memory cell having a configuration completely different from that of a memory cell of a conventional memory and having various excellent characteristics, and also a method for manufacturing the...
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7436698 |
MRAM arrays and methods for writing and reading magnetic memory devices
A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying...
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7433253 |
Integrated circuit, method of operating an integrated circuit, method of manufacturing an integrated circuit, memory module, stackable memory module
An integrated circuit has a current sense amplifier that includes a voltage comparator having a first input, a second input and an output; a first clamping device coupled between the first input of...
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7414908 |
Magnetic memory device
A Magnetic Random Access Memory (MRAM), in which very little current flows through MTJ elements and very little voltage is applied across them, the MRAM being provided with sense-amplifiers capable...
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7397694 |
Magnetic memory arrays
A magnetic memory array. A first bit line provides a first writing magnetic field to a magnetic memory cell. A second bit line provides a second writing magnetic field to a reference magnetic...
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7379364 |
Sensing a signal in a two-terminal memory array having leakage current
A two-terminal memory array includes a plurality of first and second conductive traces. An address unit operatively applies a select voltage across a selected pair of the first and second...
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7372753 |
Two-cycle sensing in a two-terminal memory array having leakage current
A two-terminal memory array includes a plurality of first and second conductive traces. An address unit operatively applies a select voltage across a selected pair of the first and second...
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7313043 |
Magnetic Memory Array
A magnetic memory is disclosed. In one embodiment, the magnetic memory array includes a plurality of cell columns and a pair of reference cell columns, including a first reference cell column and a...
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7292471 |
Semiconductor memory device having a voltage-controlled-oscillator-based readout circuit
By first readout, the current input from a selected cell is converted by a preamplifier and a VCO into pulses of a frequency inversely proportionate to the current value, and the number of the...
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7286429 |
High speed sensing amplifier for an MRAM cell
A method and circuits are disclosed for sensing an output of a memory cell having high and low resistance states. A high reference cell is in high resistance state and a low reference cell is in...
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7272034 |
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells...
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7239568 |
Current threshold detector
A magnetic memory cell write current threshold detector. The magnetic memory cell write current threshold detector includes a first MRAM test cell receiving a write current and sensing when the...
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