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9030900 Semiconductor device, semiconductor memory device and operation method thereof  
A semiconductor memory device includes a bit line sense amplification unit configured to sense/amplify data loaded on a bit line, and a driving control unit configured to supply a power line of...
9013933 Memory with redundant sense amplifier  
Embodiments of a memory are disclosed that may reduce the likelihood of a miss-read while reading a weak data storage cell. The memory may include a number of data storage cells, a column...
9013940 Sense amplifier  
A sense amplifier comprises a cross coupled pair of inverters, a first transistor, a second transistor, and a capacitive device. The cross coupled pair of inverters includes a first end, a second...
9003255 Automatic test-pattern generation for memory-shadow-logic testing  
An embodiment of a method for automated test pattern generation (ATPG), a system for ATPG, and a memory configured for ATPG. For example, an embodiment of a memory includes a first test memory...
9001562 Semiconductor memory device including a dummy block  
A semiconductor memory device includes a memory array including a plurality of element blocks; the plurality of element blocks including end-portion element blocks arranged at an end portion of...
9001596 Nonvolatile memory apparatus including sharing driver capable of performing both of read and write operation  
A nonvolatile memory apparatus includes a read/write control unit and a voltage generation unit and the memory cell. The read/write control circuit is configured to supply a bias voltage in...
9001556 Semiconductor memory device and operation method thereof  
A semiconductor memory device according to an embodiment includes a control circuit configured to apply a first voltage to a selected first line, apply a second voltage to a selected second line,...
9001588 Sense amplifier for nonvolatile semiconductor memory device  
A sense amplifier circuit of a nonvolatile semiconductor memory device is provided. The sense amplifier circuit includes a reference voltage generator, a sensing voltage generator and a...
8988960 Technique for improving static random-access memory sense amplifier voltage differential  
A static random-access memory (SRAM) module includes a column select (RSEL) driver coupled to an input/output (I/O) circuit by an RSEL line. The I/O circuit is configured to read bit line signals...
8982636 Accessing method and a memory using thereof  
A memory comprises a memory cell, a sense amplifier, and a control unit. The memory cell stores a first bit and a second bit. The sense amplifier senses a first cell current and a second cell...
8976582 Analog sensing of memory cells in a solid-state memory device  
A memory device that includes a sample and hold circuit coupled to a bit line. The sample and hold circuit stores a target threshold voltage for a selected memory cell. The memory cell is...
8971142 Semiconductor memory device and method of operating the same  
A semiconductor memory device includes a bit line pre-sense amplifier configured to sense a potential difference between bit line pair and amplify the voltages of the bit line pair based on the...
8964439 Semiconductor device having hierarchical bit line structure  
A semiconductor device comprises first and second global bit lines, a sense amplifier amplifying a voltage difference of the first and second global bit lines, first and second local bit lines...
8964496 Apparatuses and methods for performing compare operations using sensing circuitry  
The present disclosure includes apparatuses and methods related to performing compare and/or report operations using sensing circuitry. An example method can include charging an input/output (IO)...
8964494 memories and methods for repair in open digit memory architectures  
A memory with extra digit lines in full size end arrays with an open digit architecture, which can use the extra digit lines to form repair cells. In one example, folded digit sense amplifiers are...
8958255 Semiconductor storage apparatus with a data-to-be-written output circuit for carrying out an early data write  
A semiconductor storage apparatus according to the present invention includes a plurality of memory cells, a plurality of word lines, a plurality of pairs of bit lines, a plurality of sense...
8953364 Voltage rail noise sensing circuit and method  
Apparatus and methods level shift a direct current (DC) component of a voltage rail signal from a first DC level to a second DC level such that voltage rail noise can be determined. The actual...
8947924 Data readout circuit of phase change memory  
A data readout circuit of phase change memory, relating to one or more phase change memory cells, wherein each phase change memory cell is connected to the control circuit by bit line and word...
8941412 Amplifiers using gated diodes  
A circuit comprises a control line and a two terminal semiconductor device having a first terminal is coupled to a signal line, and a second terminal coupled to the control line. The semiconductor...
8908458 Sense amplifier circuit for nonvolatile memory  
A sense amplifier circuit for a nonvolatile memory that includes a first amplifier to perform a switching operation to output a first signal on a sense amplifier based logic (SABL) node depending...
8879303 Pre-charge tracking of global read lines in high speed SRAM  
In embodiments of the invention, a memory circuit includes a static random access memory (SRAM), rows of M sense amplifiers, a global read precharge tracking control circuit controlling a...
8873314 Circuits and methods for providing data to and from arrays of memory cells  
A memory device uses a global input/output line or a pair of complementary global input/output lines to couple write data signals and read data signals to and from a memory array. The same...
8854909 Semiconductor memory device and method of testing the same  
A semiconductor memory device including an open bit line structure is disclosed. The semiconductor memory device including an open bit line structure includes a first mat, a second mat contiguous...
8792293 Single-ended sense amplifier for solid-state memories  
Described embodiments provide a memory having at least one sense amplifier. The sense amplifier has a first capacitor, an inverting amplifier, a switch, an amplifier, and a second capacitor. The...
8780650 Memory with redundant sense amplifier  
Embodiments of a memory are disclosed that may reduce the likelihood of a miss-read while reading a weak data storage cell. The memory may include a number of data storage cells, a column...
8767496 Bias sensing in DRAM sense amplifiers through voltage-coupling/decoupling device  
Voltage coupling/decoupling devices are provided within DRAM devices for improving the bias sensing of sense amplifiers and thus the refresh performance. The voltage coupling/decoupling devices...
8743639 Semiconductor memory device  
A semiconductor memory device includes a switching unit coupled between a local sense amplifier and a bit line sense amplifier and configured to be turned on in response to a switching signal...
8737152 Semiconductor memory device and method of testing the same  
A semiconductor memory device including an open bit line structure is disclosed. The semiconductor memory device including an open bit line structure includes a first mat, a second mat contiguous...
8705304 Current mode sense amplifier with passive load  
Memories, current mode sense amplifiers, and methods for operating the same are disclosed, including a current mode sense amplifier including cross-coupled p-channel transistors and a load circuit...
8693274 Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features  
Systems and methods are disclosed for providing selective threshold voltage characteristics via use of MOS transistors having differential threshold voltages. In one exemplary embodiment, there is...
8693272 Sensing circuit  
A circuit includes a degeneration p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based...
8619462 VSS-sensing amplifier  
Some embodiments regard a circuit comprising a memory cell, a first data line, a second data line, a sensing circuit coupled to the first data line and the second data line, a node selectively...
8559249 Memory with redundant sense amplifier  
Embodiments of a memory are disclosed that may reduce the likelihood of a miss-read while reading a weak data storage cell. The memory may include a number of data storage cells, a column...
8559240 Sense amplifying circuit, and semiconductor memory device having the same  
A CMOS latch-type sense amplifying circuit is disclosed. The circuit comprises a CMOS differential amplifier configured to amplify a voltage signal of an input line pair to generate a first...
8553480 Local IO sense accelerator for increasing read/write data transfer speed  
A memory array includes: at least one differential local bit line pair; at least one differential global bit line pair; at least a column selection signal, for charging the differential local bit...
8547766 Area-efficient data line layouts to suppress the degradation of electrical characteristics  
A data line layout includes column selection lines arranged in a first direction at a layer on a memory cell array region, and data lines arranged in the first direction at the layer, the data...
8531870 Semiconductor device and driving method of semiconductor device  
A memory cell includes a capacitor, a first transistor, and a second transistor whose off-state current is smaller than that of the first transistor. The first transistor has higher switching...
8531902 Sensing circuit  
A circuit includes a degeneration p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based...
8520454 SRAM device capable of independently controlling a double-gate selection transistor for maintaining an optimal read margin and read speed  
A SRAM device which can set a threshold voltage of a selection transistor appropriate for all the cells on an SRAM array is disclosed. The SRAM device uses a field effect transistor as the...
8514631 Determining a logic state based on currents received by a sense amplifer  
Determining that a first input of a sense amplifier is to receive information based upon a state of a storage cell during a first portion of a read cycle, and determining that a conductance at the...
8509015 Using a precharge characteristics of a node to validate a previous data/signal value represented by a discharge of said node  
An integrated circuit precharges a node 6 to a precharge voltage using precharging circuitry 4. During a discharge phase discharging circuitry 8 selectively discharges that node 6 is to represent...
8483001 Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator  
A level detector, an internal voltage generator including the level detector, and a semiconductor memory device including the internal voltage generator are provided. The internal voltage...
8477520 Semiconductor memory device  
A semiconductor device includes a first amplifier circuit, a second amplifier circuit, first and second bit lines coupled to the first amplifier circuit, third and fourth bit lines coupled to the...
8462572 Variability resilient sense amplifier with reduced energy consumption  
An ultra low power sense amplifier circuit for amplifying a low swing input signal to a full swing output signal is disclosed. In one aspect, the amplifier circuit includes a first amplifier stage...
8427895 Systems, memories, and methods for repair in open digit memory architectures  
A memory with extra digit lines in full size end arrays with an open digit architecture, which can use the extra digit lines to form repair cells. In one example, folded digit sense amplifiers are...
8422326 Semiconductor device having sense amplifier  
For example, four driver transistors are arranged in wells so as to adjoin both sides of each of two element isolation regions. Two pairs of cross-coupled sense transistors are arranged in the...
8400857 Circuit for sensing the content of a semiconductor memory cell  
A sensing circuit (100) for sensing the content of a memory cell (101), wherein the sensing circuit comprises a sense node (103) connectable to the memory cell (101) so that a signal indicative of...
8391085 Semiconductor memory device capable of matching the timing between sub-amplifier control signal and column selection signal  
A semiconductor memory device comprises a plurality of memory cell mats, a plurality of sub-word driver regions and a plurality of sense amplifier regions, a plurality of intersection regions, a...
8369167 Semiconductor memory device and method of testing a sense amplifier of the same  
A semiconductor device includes the following elements. A sense amplifier amplifies signal on a bit line. A column switch is between the bit line and a local input-output line. A sub-amplifier...
8351285 Systems, memories, and methods for repair in open digit memory architectures  
Memories, systems, and methods for repairing are provided. A memory with extra digit lines in end arrays with an open digit architecture, which can use the extra digit lines to form repair cells....