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7411861 |
Integrated circuit device and electronic instrument
An integrated circuit device includes a RAM block including a plurality of wordlines WL, a plurality of bitlines BL, a plurality of memory cells MC, wordline control circuit, and a data read...
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7408826 |
Semiconductor memory device
A semiconductor memory device that includes a memory cell array having a plurality of memory cells that are connected between a bit line pair, which transfers data to the bit line pair, a precharge...
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7391656 |
Self-feedback control pipeline architecture for memory read path applications
A memory reading apparatus transfers digital data from a memory array that is independent of external clocking rate, where the data transmission time is not limited by the external clock period,...
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7385858 |
Semiconductor integrated circuit having low power consumption with self-refresh
A dynamic random access memory has logically identical circuits for providing the same logical control signals. Each set of control signals can have different electrical parameters. One circuit can...
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7382677 |
Memory device having internal voltage supply providing improved power efficiency during active mode of memory operation
A internal voltage generator in a semiconductor memory device has a first and second internal voltage generators. The first internal voltage generator outputs a first signal having a first voltage...
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7379356 |
Memory, integrated circuit and methods for adjusting a sense amp enable signal used therewith
A memory includes at least one memory segment that includes an array of memory cells arranged in a plurality of columns, each of the plurality of columns having a corresponding bitline pair. An...
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7375544 |
Semiconductor apparatus having logic level decision circuit and inter-semiconductor apparatus signal transmission system
In a signal transmission system between a plurality of semiconductor apparatuses, a logic level decision circuit deciding a logic level of an input signal in accordance with which of two reference...
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7369450 |
Nonvolatile memory having latching sense amplifier and method of operation
A memory comprises a sense amplifier for sensing a logic state of a selected bitline. The sense amplifier includes a first precharge circuit, a current-to-voltage converter, a latch circuit, and a...
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7369423 |
Nonvolatile memory device using hybrid switch cell
A nonvolatile memory device using a hybrid switch cell comprises a plurality of hybrid switch cell arrays each having a hierarchical bit line structure including a main bit line and a sub bit line....
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7366051 |
Word line driver circuitry and methods for using the same
Word line driver circuitry for selectively charging and discharging one or more word lines is provided. The driver circuitry uses a dual transistor topology, where a first transistor is driven by a...
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7366012 |
Synchronous memory device with reduced power consumption
A synchronous non-volatile memory device that includes a circuit for performing operations on the memory device, a circuit for receiving a request of operation and operative information required...
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7362645 |
Integrated circuit fuses having corresponding storage circuitry
Storage circuitry ( 66 ) may be used to store the values of fuses ( 77 ) so that storage circuitry ( 66 ) can be read instead of fuses ( 77 ). By accessing the fuse values from storage circuitry (...
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7359258 |
Semiconductor memory with wordline timing
A semiconductor memory with wordline timing, which links activating a wordline to an isolation signal. The isolation signal is applied to a memory section adjacent the memory section containing the...
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7352646 |
Semiconductor memory device and method of arranging a decoupling capacitor thereof
A semiconductor memory device with improved operational performance by reducing the level variation of first and second power voltages applied to a sense amplifier by efficiently locating a...
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7349270 |
Semiconductor memory with wordline timing
A semiconductor memory with wordline timing, which links activating a wordline to an isolation signal. The isolation signal is applied to a memory section adjacent the memory section containing the...
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7345910 |
Semiconductor device
The invention provides a semiconductor device capable of reducing wasteful power consumption. The semiconductor device of the invention does not require a refresh operation, and includes memory...
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7339846 |
Method and apparatus for reading data from nonvolatile memory
Roughly described, a memory includes first and second target memory cells in a plurality of electrically adjacent memory cells all sharing a word line. The two target memory cells are separated...
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7330389 |
Address detection system and method that compensates for process, temperature, and/or voltage fluctuations
An address transition detector (ATD) system is provided with an integrator, a feedback circuit and an output circuit. The integrator has an enhanced architecture that ensures a fast output signal...
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7330375 |
Sense amplifier circuit for parallel sensing of four current levels
A single-ended sense amplifier having a precharge circuit for maintaining a stable voltage on a bitline, and a sensing circuit coupled to the bitline for sensing an amount of current flowing into...
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7327618 |
Semiconductor memory with wordline timing
A semiconductor memory with wordline timing, which links activating a wordline to an isolation signal. The isolation signal is applied to a memory section adjacent the memory section containing the...
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7319627 |
Memory device
A sense amplifier circuit for a non-volatile semiconductor memory device is used to output data written in a selected non-volatile memory cell and is constructed as a current mirror circuit...
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7313041 |
Sense amplifier circuit and method
A semiconductor device memory device ( 300 ) can include a sense amplifier ( 302 ) enabled according to a first sense signal (setn) and a second sense signal (setp). In a sense operation, a first...
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7307912 |
Variable data width memory systems and methods
Systems and methods disclosed herein provide for variable data width memory. For example, in accordance with an embodiment of the present invention, a technique for doubling a width of a memory is...
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7307869 |
Method and circuit for reading a dynamic memory circuit
A method for reading data from a dynamic memory circuit is provided, wherein at least one memory cell can be addressed via a word line and a bit line, wherein the memory cell is connected to a...
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7304910 |
Semiconductor memory device with sub-amplifiers having a variable current source
A column circuit that amplifies signals read from a sense amplifier array SAA to local input/output lines LIO in sub-amplifiers SAMP to transfer the amplified signals to main input/output lines MIO...
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7301841 |
Circuit and method for selecting test self-refresh period of semiconductor memory device
The present invention provides a self-refresh period adaptable for testing cells that are weak against hot temperature stress. An apparatus for controlling a self-refresh operation in a...
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7301827 |
Semiconductor memory device
In a semiconductor memory device for reading out multilevel data in a time-shared manner at different timings, by providing plural control signal lines for controlling the operation timings of the...
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7292467 |
Magnetic random access memory device
A memory device includes a memory cell, a reference structure, and a sensing device. The memory cell includes an MR element and a pass transistor. The pass transistor, reference structure, and...
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7289379 |
Memory devices and methods of operation thereof using interdependent sense amplifier control
A memory device includes a control circuit configured to disable a local input/output line sense amplifier responsive to a global input/output line sense amplifier enable signal. The device may...
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7277340 |
Smart memory read out for power saving
A method and a circuit are given, to implement and realize power saving Sense Electronics Endowed (SEE) memory using modified memory read cycles, named as Smart Memory Readout (SMR). In an SMR-mode...
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7277335 |
Output circuit that turns off one of a first circuit and a second circuit
An output circuit including a first circuit configured to provide a first output signal, a second circuit configured to provide a second output signal, and a third circuit. The third circuit is...
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7272059 |
Sensing circuit for a semiconductor memory
A sensing circuit for a semiconductor memory comprising a circuit branch intended to be electrically coupled to a memory bit line having connected thereto a memory cell to be sensed. A bit line...
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7266036 |
Semiconductor memory device
A semiconductor memory device is provided with a plurality of memory blocks including a plurality of word lines and a plurality of bit line pairs intersecting the individual word lines, a plurality...
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7260002 |
Methods and devices for preventing data stored in memory from being read out
A dynamic random access memory (DRAM) device, including a DRAM core having memory cells for storing data information, and a read protection unit, prevents data stored in the memory cells before...
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7257034 |
Semiconductor integrated circuit device
There is achieved a high-integrated and high-speed nonvolatile memory which can stabilize an operation of a phase-change memory for a short operation cycle time. A latch is provided in a write...
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7254077 |
Circuit and method for high speed sensing
A circuit and method for sensing a difference between a first signal, such as a signal from the source side of a memory cell, and a second signal, such as a signal from a reference dummy cell,...
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7245543 |
Data read circuit for use in a semiconductor memory and a method therefor
A data read circuit and method for use in a semiconductor memory device that has a memory cell array are provided. The circuit includes a selector for selecting a unit cell within the memory cell...
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7239540 |
Semiconductor memory device
A semiconductor memory device having a crosspoint-type memory cell array includes a column readout voltage supply circuit 12 which supplies a predetermined first voltage when readout is selected,...
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7236407 |
Flash memory architecture for optimizing performance of memory having multi-level memory cells
A flash memory device having a pipelined RAS/CAS architecture is logically organized as an array of rows and columns of multi-bit flash memory cells each capable of being selectively programmed to...
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7230868 |
Stable source-coupled sense amplifier
An amplifier circuit includes an amplifier section ( 700 ), an equalization section ( 770 ), and an activation section ( 720 ). The P-channel transistors ( 702, 704 ) of the amplifier section are...
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7224010 |
Voltage-controlled amplifier for a signal processing system
A voltage-controlled amplifier for a signal processing system includes an input voltage reception end, a first voltage-to-current converter, a reference current generator, a gain adjustment...
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7218548 |
Semiconductor memory device for low voltage
A semiconductor memory device includes a first cell block having a plurality of unit cells for providing a data signal included in a unit cell through a corresponding bit line pair; a plurality of...
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7193916 |
Apparatus and method for determining erasability of data
A recording apparatus for facilitating data erasure operations involving data recorded on a recording medium. Each piece of data recorded on the recording medium may be examined to determine...
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7187600 |
Method and apparatus for protecting an integrated circuit from erroneous operation
A data processing system ( 10 ) has an embedded non-volatile memory ( 22 ) that is programmed and erased by use of a high voltage provided by a charge pump ( 78 ). In order to prevent the...
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7177201 |
Negative bias temperature instability (NBTI) preconditioning of matched devices
An accumulated data-dependent post-manufacture shift in a characteristic of one or more of a pair of matched devices within an integrated circuit may cause a mismatch in the characteristic between...
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7173873 |
Device and method for breaking leakage current path
A device and a method for breaking the leakage current path, wherein the leakage current is caused by a defect in a memory cell of a memory array, are provided. The device includes a column...
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7151689 |
Adjusting the frequency of an oscillator for use in a resistive sense amp
A system and methods optimize the operation of sensing circuitry. In one embodiment, the output of a sensing circuit is stored in a register and processed through logic gates to determine whether...
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7149136 |
Memory circuit with redundant memory cell array allowing simplified shipment tests and reduced power consumptions
A memory circuit has a regular memory cell array; a redundant memory cell array that can replace a failed portion in the regular memory cell array; a redundant replacement memory for storing data...
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7145821 |
Semiconductor memory device for low power system
An apparatus included in a semiconductor memory device for precharging a bit line and a bit line bar and sensing and amplifying a data delivered to one of the bit line and the bit line bar. A...
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7145811 |
Semiconductor storage device
A semiconductor storage device according to one embodiment of the present invention, comprising: FBCs (Floating Body Cells) which store data by accumulating a majority carrier in a floating channel...
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