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9042190 Apparatuses, sense circuits, and methods for compensating for a wordline voltage increase  
Apparatuses, sense circuits, and methods for compensating for a voltage increase on a wordline in a memory is described. An example apparatus includes a bitline, a memory cell coupled to the...
9042148 Content addressable memory  
An entry including multiple bits of unit cells each storing data bit is coupled to a match line. The match line is supplied with a charging current having a restricted current value smaller than a...
9036439 Semiconductor memory device having improved refresh characteristics  
A semiconductor memory device having improved refresh characteristics includes a memory array including a plurality of memory cells; a test unit configured to test refresh characteristics of the...
9036437 Method and apparatus for testing memory utilizing a maximum width of a strobe signal and a data width of a data signal  
A method and an apparatus for testing a memory are provided, and the method is adapted for an electronic apparatus to test the memory. In the method, a left edge and a right edge of a first...
9036441 Anti-fuse circuit in which anti-fuse cell data is monitored, and semiconductor device including the same  
An anti-fuse circuit in which anti-fuse program data may be monitored outside of the anti-fuse circuit and a semiconductor device including the anti-fuse circuit are disclosed. The anti-fuse...
9036395 Programmed-state detection in memristor stacks  
A method for programmed-state detection in memristor stacks includes applying a first secondary switching voltage across a memristor stack to produce a first programmed-state-dependent secondary...
9030865 Circuit arrangement and method of forming the same  
In various embodiments, a circuit arrangement may be provided including a data cell. The circuit arrangement may further include a first transistor and a second transistor. The first controlled...
9030898 Semiconductor device  
An embodiment of the present invention provides a semiconductor, including a non-volatile storage unit suitable for storing one or more first addresses; an address storage unit suitable for...
9025403 Dynamic cascode-managed high-voltage word-line driver circuit  
A high-voltage word-line driver circuit for a memory device uses cascode devices to prevent any single transistor of the driver circuit from having the full power supply voltage from which the...
9019746 Resistive memory device and method for driving the same  
A resistive memory device includes a plurality of memory cells, each of which is configured to store a normal data, a first reference data corresponding to a first resistance state and a second...
9019781 Internal voltage generation circuit  
An internal voltage generation circuit includes: a selection unit configured to select one of first and second reference voltages as a selection reference voltage in response to a self refresh...
9013925 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device comprises a memory cell array, a staircase voltage generator, and a decode and level shift circuit. The memory cell array comprises a plurality of memory...
9007810 ReRAM forming with reset and iload compensation  
FORMING reversible resistivity-switching elements is described herein. The FORMING voltage may be halted if the current through the memory cell reaches some reference current. The reference...
9007843 Internal data compare for memory verification  
A method and apparatus to program data into a row of a non-volatile memory array and verify, internally to the non-volatile memory array, that the data was successfully programmed. The...
9007825 Reduction of read disturb errors  
Methods and apparatuses for reduction of Read Disturb errors in a memory system utilizing modified or extra memory cells.
9001596 Nonvolatile memory apparatus including sharing driver capable of performing both of read and write operation  
A nonvolatile memory apparatus includes a read/write control unit and a voltage generation unit and the memory cell. The read/write control circuit is configured to supply a bias voltage in...
8995206 Device, method and computer readable program for accessing memory cells using shortened read attempts  
A device, a computer readable medium and a method that may include performing a shortened read attempt of multiple data memory cells that store data to provide an estimate of the data; wherein the...
8995213 Nonvolatile memory device and operating method thereof  
A nonvolatile memory device includes a memory cell array including a main cell area and a retention flag cell area, a retention check unit configured to compare a read result for retention flag...
8988919 Semiconductor device having a control chip stacked with a controlled chip  
A semiconductor device includes a first controlled chip and a control chip stacked therewith. The first controlled chip includes a first circuit outputting a data signal in response to a...
8982634 Flash memory  
The present invention provides a flash memory including a memory cell, a current limiter and a program voltage generator. The memory cell is programmed in response to a program current and a...
8982636 Accessing method and a memory using thereof  
A memory comprises a memory cell, a sense amplifier, and a control unit. The memory cell stores a first bit and a second bit. The sense amplifier senses a first cell current and a second cell...
8982635 Semiconductor memory device and writing method thereof  
A writing method of a semiconductor memory device includes applying a plurality of program voltages sequentially generated to a selected word line, and applying any one of a plurality of source...
8982255 Image pickup including photoelectric conversion  
An image pickup unit includes: an image pickup section including a plurality of pixels, each of the pixels including a photoelectric conversion device; and a driving section that includes an...
8976613 Differential current sensing scheme for magnetic random access memory  
A circuit for a differential current sensing scheme includes first and second cell segments, first and second reference cells, and first and second current sense amplifiers. The first and second...
8976605 High voltage generation circuit and semiconductor device including the same  
A high voltage generation circuit includes a plurality of pumps configured to generate a final pump voltage, a plurality of switches configured to couple the pumps to various nodes, a voltage...
8972790 Memory controller and memory access system with error detection using data comparison of loop-backed signals  
A controller section outputs a first signal and a second signal holding a phase relationship with the first signal. The second signal is received by a memory I/F section via a FIFO memory of an...
8971136 Memory device correcting the effect of collision of high-energy particles  
A memory device automatically correcting the effect of collisions of high-energy particles, comprising at least one memory cell, and further comprising: retention means for retaining, for a...
8964496 Apparatuses and methods for performing compare operations using sensing circuitry  
The present disclosure includes apparatuses and methods related to performing compare and/or report operations using sensing circuitry. An example method can include charging an input/output (IO)...
8964489 Semiconductor memory device capable of optimizing an operation time of a boosting circuit during a writing period  
When writing into an antifuse memory element finishes, a value of resistance of the memory element rapidly decreases; accordingly, an output voltage of a boosting circuit which produces a writing...
8958235 Semiconductor memory device  
This semiconductor memory device comprises: a memory cell array configured as an arrangement of memory cells disposed at intersections of a plurality of first lines disposed substantially in...
8958260 Systems and methods for voltage sensing and reporting  
Semiconductor devices comprising at least one voltage sensor for sensing an operating voltage associated with an operational circuit of the semiconductor device. The at least one voltage sensor is...
8958265 Nearest neighbor serial content addressable memory  
A digital design and technique may be used to implement a Manhattan Nearest Neighbor content addressable memory function by augmenting a serial content addressable memory design with additional...
8958231 Memory device including first to seventh transistors  
A memory cell includes a first transistor controlling writing of the first date by being in an on state, and holding of the first data by being in an off state, a second transistor in which a...
8958232 Method and apparatus for read assist to compensate for weak bit  
A memory assist apparatus includes a detection circuit and a compensation circuit. The detection circuit is configured to provide a detection signal indicating whether a bit line configured to...
8953393 Semiconductor device and operating method thereof  
A semiconductor device may test a semiconductor memory device by storing a data sample that is sampled from among data requested to be written into a semiconductor memory device and by comparing...
8953358 Memory device and method for driving memory device  
A memory device in which one memory cell can operate in both a single-level cell mode and a multi-level cell mode includes a signal transmission path for a multi-level cell mode in which a...
8953354 Semiconductor memory device and method of driving semiconductor memory device  
A semiconductor memory device includes a memory portion that includes i (i is a natural number) sets each including j (j is a natural number of 2 or larger) arrays each including k (k is a natural...
8947920 Memory device  
According to one embodiment, a memory device includes a memory cell, a sense amplifier, unit structures and a reference signal generator. Each structure includes a first end, a first transistor, a...
8947946 Leakage measurement systems  
Described examples include leakage measurement systems and methods for measuring leakage current between a word line at a boosted voltage and a word line at a supply voltage. The boosted voltage...
8947944 Program cycle skip evaluation before write operations in non-volatile memory  
A non-volatile memory system is disclosed that evaluates during a read before write operation whether to skip programming of portions of group of memory cells during a subsequent write operation....
8947972 Dynamic address grouping for parallel programming in non-volatile memory  
A non-volatile memory system evaluates user data before writing in order to potentially group addresses for writing within a cycle. The system can determine which sense amplifier addresses of a...
8947911 Method and circuit for optimizing bit line power consumption  
A bit line power implementing circuit is provided, the bit line power implementing circuit has a bit line discharge oscillator to convert the supply voltage to a pulse; a decoder coupled to the...
8942050 Method of inspecting variable resistance nonvolatile memory device and variable resistance nonvolatile memory device  
A method of inspecting a variable resistance nonvolatile memory device detecting a faulty memory cell of a memory cell array employing a current steering element, and a variable resistance...
8942309 Signal output improvement using data inversion and/or swapping  
An intermediate voltage is maintained between a first voltage and a second voltage by conditionally or selectively performing data bus inversion (DBI) and/or data swap operations on a first and...
8937838 Finding optimal read thresholds and related voltages for solid state memory  
An expected value associated with stored values in solid state storage, as well as a set of three or more points are obtained where the three or more points include a voltage and a value...
8934306 Memory and sense parameter determination methods  
Memory devices and methods for operating a memory include filtering a histogram of sensed data of the memory, and adjusting a parameter used to sense the memory using the filtered histogram....
8934317 Semiconductor memory devices having internal clock signals and memory systems including such memory devices  
A semiconductor memory device has a clock input buffer that is turned ‘on’ or ‘off’ in response to a first control signal. The clock input buffer is configured to buffer an external clock signal...
8934313 Negative voltage generator and semiconductor memory device  
A negative voltage generator includes a variable-capacitance negative voltage generating unit, a switching unit and a positive voltage applying unit. The negative voltage generating unit includes...
8934304 Operating method of nonvolatile memory device and operating method of memory system including nonvolatile memory device  
A nonvolatile memory device includes a plurality of memory cells and a plurality of monitor cells. The method of operating the device includes erasing the plurality of memory cells and the...
8934278 Hybrid ternary content addressable memory  
A method within a hybrid ternary content addressable memory (TCAM) includes comparing a first portion of a search word to a first portion of a stored word in a first TCAM stage. The method further...