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7391655 Data processing system and nonvolatile memory  
Erasing is performed with respect to a nonvolatile memory cell without causing depletion halfway therethrough. A control circuit for reversibly and variably controlling the threshold voltage of the...
7372733 Non-volatile semiconductor memory device having different erase pass voltages for respective memory sectors and associated erase method  
A non-volatile semiconductor memory device comprises a plurality of memory sectors arranged in different memory banks having different bulk regions. The memory cells can be erased using a first...
7362610 Programming method for non-volatile memory and non-volatile memory-based programmable logic device  
A method for programming a flash memory cell comprises providing input data to the flash cell and providing a segmented programming pulse to the flash memory cell. The segmented programming pulse...
7355897 Methods to resolve hard-to-erase condition in charge trapping non-volatile memory  
A method for operating a nitride trapping memory cell is provided to resolve hard-to-erase condition by employing a reset technique to eliminate or reduce the number of electrons in the middle of a...
7353325 Wear leveling techniques for flash EEPROM systems  
A mass storage system made of flash electrically erasable and programmable read only memory (“EEPROM”) cells organized into blocks, the blocks in turn being grouped into memory banks, is...
7345922 Position based erase verification levels in a flash memory device  
The location of a cell to be erase verified is determined. The erase verification threshold voltage is then set. The threshold voltage is changed in response to the cell's location with respect to...
7324385 Molecular memory  
Molecular memories, i.e., memories that incorporate molecules for charge storage, are disclosed. Molecular memory cells, molecular memory arrays, and electronic devices including molecular memory...
7305513 Circuit for preventing nonvolatile memory from over-erase  
A method for preventing the over-erase in a nonvolatile memory comprises the following steps. First, at least one normal cell of the nonvolatile memory and at least one reference cell that...
7277329 Erase method to reduce erase time and to prevent over-erase  
An erase method used in an array of flash memory cells arranged in a plurality of sectors provides each sector with an erase flag. The erase flag of sectors to be erased are set to a first value....
7277327 Methods for erasing flash memory  
Methods for erasing flash memory using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.
7266029 Nonvolatile memory devices including overlapped data sensing and verification and methods of verifying data in nonvolatile memory devices  
Data verification methods and/or nonvolatile memory devices are provided that concurrently detect data for a selected memory cell of the nonvolatile memory device and verify a programmed or erase...
7266019 Non-volatile memory device and erasing method therefor  
During an erasing sequence, after a preprogram operation (S 1 ), an erasing operation (S 3 ), and an APDE operation (S 5 ) are executed and confirmation by an APDE verify operation (S 6 : P) and...
7251158 Erase algorithm for multi-level bit flash memory  
Methods of erasing a sector of multi-level flash memory cells (MLB) having three or more data states to a single data state are provided. The present invention employs an interactive sector erase...
7242616 Non-volatile semiconductor memory device  
A non-volatile semiconductor memory device comprises a semiconductor substrate; a cell well formed in the semiconductor substrate; a first sub cell array including part of a cell array of NAND...
7236405 Method for setting erasing pulses and screening erasing defects of nonvolatile memory  
Method for determining the number of applications of erasing pulses, including extracting two pairs of the accumulated number of the erasing pulses Np and the ratio Re of the number of erased...
7236400 Erase verify for non-volatile memory using a bitline current-to-voltage converter  
A memory device verify system determines a state of memory cells in a memory. The memory includes a memory array having a plurality of memory cells coupled to bit lines. A verify circuit is coupled...
7236399 Method for erase-verifying a non-volatile memory capable of identifying over-erased and under-erased memory cells  
A memory device verify system determines a state of memory cells in a memory. The memory includes a memory array having a plurality of memory cells coupled to bit lines. A verify circuit is coupled...
7233530 System and method for over erase reduction of nitride read only memory  
A nitride read only memory (NROM) erase system is disclosed. The NROM erase system comprises at least one memory sector, N sense amplifiers, and N buffers. The memory sector is segmented into N...
7233529 System for erasing nonvolatile memory  
Erasing is performed with respect to a nonvolatile memory cell without causing depletion halfway therethrough. A control circuit for reversibly and variably controlling the threshold voltage of the...
7233525 Method of converting contents of flash memory cells in the presence of leakage  
An erase operation in a flash memory device includes applying an erase pulse to memory cells of the flash memory device to convert the contents of the memory cells into logic 1 bits before any...
7230853 Selective erase method for flash memory  
Selective erase method for a flash memory device including a group of memory cells arranged in rows and columns include performing an erase operation on the group of memory cells and verifying the...
7227787 Method for erasing an NROM cell  
An operation to erase a nitride read only memory (NROM) memory block starts by erasing the memory block. An erase verify operation can then be performed to determine the success of the erase. If a...
7215575 Detecting over programmed memory  
In a non-volatile semiconductor memory system (or other type of memory system), a memory cell is programmed by changing the threshold voltage of that memory cell. Because of variations in the...
7200707 Electronic apparatus with non-volatile memory and writing method thereof  
An electronic apparatus with non-volatile memory and writing method thereof. For a specific address of a memory block of a non-volatile address memory, it can be written only one time per hour. The...
7196934 Non-volatile memory with erase verify circuit having comparators indicating under-erasure, erasure, and over-erasure of memory cells  
A memory device verify system determines a state of memory cells in a memory. The memory includes a memory array having a plurality of memory cells coupled to bit lines. A verify circuit is coupled...
7187590 Method and system for self-convergent erase in charge trapping memory cells  
A process and a memory architecture for operating a charge trapping memory cell is provided. The method for operating the memory cell includes establishing a high threshold state in the memory cell...
7180781 Memory block erasing in a flash memory device  
An erase pulse is applied to the memory block to be erased. An erase verification operation is performed to verify that each memory cell of the memory block is erased. If a memory cell has a...
7180779 Memory architecture with enhanced over-erase tolerant control gate scheme  
The present invention is related to semiconductor memories, and in particular, to a nonvolatile or flash memory and method that reduces the effect of or is tolerant of over-erased memory cells....
7158420 Inversion bit line, charge trapping non-volatile memory and method of operating same  
A charge trapping memory device in which a field induced inversion layer is used to replace the source and drain implants. The memory cell are adapted to store two bits, one on the left side and...
7142460 Flash memory device with improved pre-program function and method for controlling pre-program operation therein  
A flash memory device has an improved pre-program function. The flash memory device comprises memory cell blocks each including wordlines, bitlines, and memory cells sharing common source lines; an...
7133313 Operation scheme with charge balancing for charge trapping non-volatile memory  
A memory cell with a charge trapping structure has multiple bias arrangements. Multiple cycles of applying the bias arrangements lowering and raising a threshold voltage of the memory cell leave a...
7127550 Multi-module simultaneous program, erase test, and performance method for flash memory  
Methods and apparatus for accessing modules on a flash memory package concurrently during testing are disclosed. According to one aspect of the present invention, a memory device for storing data...
7123513 Erase verify for non-volatile memory using a reference current-to-voltage converter  
A memory device verify system determines a state of memory cells in a memory. The memory includes a memory array having a plurality of memory cells coupled to bit lines. A verify circuit is coupled...
7120062 Method for soft-programming an electrically erasable nonvolatile memory device, and an electrically erasable nonvolatile memory device implementing the soft-programming method  
Described herein is a method for soft-programming an electrically erasable nonvolatile memory device, wherein soft-programming is carried out with a soft-programming multiplicity equal to twice...
7099220 Methods for erasing flash memory  
Methods for erasing flash memory using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.
7082060 Soft programming for recovery of overerasure  
A method of erasing a memory cell includes the step of erasing a memory cell. The current in the memory cell is measured. If the measured memory cell current approximately exceeds a predetermined...
7075832 Method for erasing an NROM cell  
An operation to erase a nitride read only memory (NROM) memory block starts by erasing the memory block. An erase verify operation can then be performed to determine the success of the erase. If a...
7075831 Method for erasing an NROM cell  
An operation to erase a nitride read only memory (NROM) memory block starts by erasing the memory block. An erase verify operation can then be performed to determine the success of the erase. If a...
7061811 Faster method of erasing flash memory  
An erase operation in a flash memory device includes applying an erase pulse to memory cells of the flash memory device to convert the contents of the memory cells into logic 1 bits before any...
7061810 Erasing flash memory without pre-programming the flash memory before erasing  
An erase operation in a flash memory device includes applying an erase pulse to memory cells of the flash memory device to convert the contents of the memory cells into logic 1 bits before any...
7057935 Erase verify for non-volatile memory  
A memory device verify system determines a state of memory cells in a memory. The memory includes a memory array having a plurality of memory cells coupled to bit lines. A verify circuit is coupled...
7050336 Nonvolatile semiconductor memory device having reduced erasing time  
An operation of erasing data in a memory block of a nonvolatile semiconductor memory device employs an operation of collectively applying an erase pulse to the memory block, and an operation of...
7035147 Overerase protection of memory cells for nonvolatile memory  
The invention provides a nonvolatile memory and corresponding method having an optimal memory erase function and, more particularly, a method for erasing a nonvolatile memory comprising a source, a...
7023734 Overerase correction in flash EEPROM memory  
A method of overerase correction for memory cells in a memory array after the memory cells have been erased is provided comprising the following steps: (a) setting a gate voltage of memory cells...
7020021 Ramped soft programming for control of erase voltage distributions in flash memory devices  
A method of erasing bits in a multi-level cell flash memory array is described. The method includes applying over-erase verification after each erase pulse. If cells verify as over-erased, a ramped...
6996012 Nonvolatile memory device capable of preventing over-erasure via modified tunneling through a double oxide layer between a floating gate and a control gate  
A non-volatile memory device and a method for driving the same prevent an excessive electron erasing phenomenon without additional components. Each memory cell includes a tunnel oxide layer, a...
6967873 Memory device and method using positive gate stress to recover overerased cell  
A method of erasing a flash electrically erasable read only memory (EEPROM) device composed of a plurality of memory cells includes pre-programming the plurality of memory cells, applying an erase...
6944062 Transistor and semiconductor memory using the same  
A transistor includes p-type semiconductor ( 12 ) including a projection ( 13 a ) having a pair of side walls ( 13 b , 13 b ) facing each other, a gate insulation layer ( 15 c ), a pair of n-type...
6937524 Nonvolatile semiconductor memory device having a write control circuit  
A non-volatile semiconductor memory device capable of performing page programming at high speeds is provided. This nonvolatile memory device includes a cell array with a matrix of rows and columns...
6904400 Flash EEPROM memory emulator of non-flash EEPROM device and corresponding method  
A method and device emulate the features of a EEPROM memory device. The device is included into a memory macrocell which is embedded into an integrated circuit comprising also a microcontroller....
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