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8174904 |
Memory array and method of operating one of a plurality of memory cells
An embodiment of the invention provides a memory array including a plurality of bit lines, a plurality of memory cells and a device. Each of the plurality of memory cells has a first node, a second...
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8164959 |
Method and system for programming non-volatile memory cells based on programming of proximate memory cells
A multi-level non-volatile memory device programs cells in each row in a manner that takes into account the coupling from the programming of cells that are proximate the row to be programmed. In...
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8125830 |
Area-efficient electrically erasable programmable memory cell
Electrically erasable programmable “read-only” memory (EEPROM) cells in an integrated circuit, and formed by a single polysilicon level. The EEPROM cell consists of a coupling capacitor and a com...
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8098530 |
Systems and methods for erasing a memory
Methods of erasing a memory, methods of operating a memory, memory devices, and systems. In one such method, an erase block is erased to an intermediate erase voltage before it is erased to a final...
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8085597 |
Nonvolatile semiconductor memory and data writing method for nonvolatile semiconductor memory
A method having the steps of applying the same gate voltage to each of gate terminals of a plurality of memory cells via word lines to designate the memory cells as a write target, and...
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8081520 |
Over erase correction method of flash memory apparatus
An over erase correction method of a flash memory apparatus is provided. The flash memory apparatus includes at least a microprocessor, a memory array, a bit line exchange unit and a column...
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8081519 |
Adaptive erase and soft programming for memory
An erase sequence of a non-volatile storage device includes an erase operation followed by a soft programming operation. The erase operation applies one or more erase pulses to the storage...
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8077518 |
E/P durability by using a sub-range of a full programming range
A NAND flash memory system is controlled by determining whether to change a value of a voltage threshold. The voltage threshold is associated with an erase operation to a portion of a NAND flash...
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8077524 |
Correcting for over programming non-volatile storage
A non-volatile storage system corrects over programed memory cells by selectively performing one or more erase operations on a subset of non-volatile storage elements that are connected to a common...
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8064261 |
Semiconductor nonvolatile memory device
An operation scheme for operating stably a semiconductor nonvolatile memory device is provided. When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate...
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8036040 |
Memory system with improved efficiency of data transfer between host, buffer, and nonvolatile memory
The present invention provides a memory system which contributes to improvement in efficiency of a data process accompanying a memory access. A memory system has a rewritable nonvolatile memory, a...
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8014210 |
Non-volatile memory control circuit
An efficient erasure is performed. The voltage of a source line SL is manipulated in units of a sector providing a plurality of memory cells. An erase command is received for the desired memory...
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8014209 |
Programming and selectively erasing non-volatile storage
A non-volatile storage system performs programming for a plurality of non-volatile storage elements and selectively performs re-erasing of at least a subset of the non-volatile storage elements...
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7992061 |
Method for testing reliability of solid-state storage medium
A method for testing a reliability of a solid-state storage medium is provided, wherein the solid-state storage medium has a plurality of blocks. First, a lifetime of each of the blocks of the...
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7984360 |
Avoiding errors in a flash memory by using substitution transformations
To store an input string of M N-tuples of bits, a substitution transformation is selected in accordance with the input string and is applied to the input string to provide a transformed string of M...
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7978532 |
Erase method of flash memory device
Erase and program methods of a flash memory device including MLCs for increasing the program speed. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages...
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7974130 |
Semiconductor memory device and method for erasing the same
A semiconductor memory device including a memory cell array with NAND cell units arranged therein, the NAND cell unit having a plurality of electrically rewritable and non-volatile memory cells...
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7962682 |
Multi-module simultaneous program, erase test, and performance method for flash memory
Methods and apparatus for accessing modules on a flash memory package concurrently during testing are disclosed. According to one aspect of the present invention, a memory device for storing data...
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7944746 |
Room temperature drift suppression via soft program after erase
Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after...
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7929353 |
Method and apparatus for adaptive memory cell overerase compensation
A method and apparatus are provided for adaptive memory cell overerase compensation. A semiconductor memory device (100) is provided for performing the adaptively compensating erase verify...
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7930494 |
Storage area network (SAN) switch multi-pass erase of data on target devices
Techniques are provided for performing multi-pass erase. An erase command is received at a storage area network (SAN) switch in a storage area network. The erase command is associated with a block...
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7920427 |
Dynamic soft program trims
Systems and methods are disclosed for modifying soft-programming trims of a non-volatile memory device, such as a flash memory device. The soft-programming trims may be modified based on a count of...
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7911849 |
Controlled boosting in non-volatile memory soft programming
A soft programming pre-charge voltage provides boosting control during soft programming operations for non-volatile memory devices. A pre-charge voltage can be applied to the word lines of a block...
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7907449 |
Two pass erase for non-volatile storage
Techniques are disclosed herein for erasing non-volatile memory cells. The memory cells are erased using a trial erase pulse. A suitable magnitude for a second pulse is determined based on the...
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7869279 |
EEPROM memory device and method of programming memory cell having N erase pocket and program and access transistors
A memory device including a plurality of memory cells, each with access and program PMOS transistors situated in a common N-Well formed in a P-substrate, and an n-erase pocket formed directly in...
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7869284 |
Erasing method for nonvolatile memory
The present invention relates to an erasing method for nonvolatile memory, which uses forward bias between the source/drain region and body contact to inject majority carriers into the body, and...
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7830717 |
Method for performing erasing operation in nonvolatile memory device
A method for performing erasing operation in a nonvolatile memory device includes the steps of applying an erasing voltage to P-wells of a selected memory cell block which is composed of a...
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7830723 |
Nitride read-only memory cell and nitride read-only memory array
A NROM memory device includes an array of memory cells and first and second bit lines. The first and second bit lines are coupled to opposite sides of the memory cells. During an erase operation,...
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7782681 |
Operation method of flash memory device capable of down-shifting a threshold voltage distribution of memory cells in a post-program verify operation
In a driving method of a flash memory device including a selected first bit line and an unselected second bit line, a program voltage of a pulse is applied to word lines of all memory cells in a...
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7773426 |
Data processing system and nonvolatile memory
Erasing is performed with respect to a nonvolatile memory cell without causing depletion halfway therethrough. A control circuit for reversibly and variably controlling the threshold voltage of the...
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7746707 |
Nonvolatile semiconductor memory device
A NAND cell unit includes memory cells which are connected in series. An erase operation is effected on all memory cells. Then, a soft-program voltage, which is opposite in polarity to the erase...
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7746706 |
Methods and systems for memory devices
One embodiment of the invention relates to a method for accessing a memory cell. In this method, at least one bit of the memory cell is erased. After erasing the at least one bit, a soft program...
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7743203 |
Managing flash memory based upon usage history
A memory management component can track the amount of time between erase cycles for a particular memory region, and can manage memory region such that the regions are given sufficient time to rest...
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7710787 |
Method of erasing an EEPROM device
A method for erasing an EEPROM cell which reduces the need for monitoring algorithms. The potential at the erase gate is initially raised and the potential at the control gate is lowered to cause...
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7710776 |
Method for on chip sensing of SONOS VT window in non-volatile static random access memory
A system and method for determining a SONOS VT window using a current sensing scheme is disclosed. The present invention creates a first current path and a second current path through the volatile...
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7707353 |
Access frequency estimation apparatus and access frequency estimation method
An apparatus for estimating a frequency of access to a storage device that includes a flash memory and a controller for controlling the flash memory includes interface. Data is written into the...
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7707371 |
Storage area network (SAN) switch multi-pass erase of data on target devices
Techniques are provided for performing multi-pass erase. An erase command is received at a storage area network (SAN) switch in a storage area network. The erase command is associated with a block...
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7701780 |
Non-volatile memory cell healing
Embodiments of the present disclosure provide methods, devices, modules, and systems for healing non-volatile memory cells. One method includes biasing a first select gate transistor coupled to a...
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7688642 |
Non-volatile memory device and method for programming/erasing the same
Provided are a SONGS type nonvolatile or flash memory device and related programming/erasing methods. The device has a deep well region of a first conductive type that isolates a well region of a...
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7660164 |
Method for estimating threshold voltage of semiconductor device
A method is provided, which can improve the efficiency of device design by estimating the variation of threshold voltage according to the pulse widths of applied voltage for a semiconductor device...
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7646638 |
Non-volatile memory cell that inhibits over-erasure and related method and memory array
A memory cell includes a first transistor and a second transistor. The first transistor is configured as an erase capacitor, and the second transistor is configured as a program transistor. Gates...
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7640389 |
Non-volatile memory having a multiple block erase mode and method therefor
A non-volatile memory can have multiple blocks erased in parallel for a relatively few number of erase operations. This saves time for the user in the set-up of the memory because the erase...
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7630256 |
Erase operation in a flash drive memory
A method for erasing a non-volatile memory device performs a block erase operation. The cells are then soft programmed and erase verified to determine if the threshold voltages indicate erased...
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7623390 |
Programming method for non-volatile memory and non-volatile memory-based programmable logic device
A method for programming a flash memory cell comprises providing input data to the flash cell and providing a segmented programming pulse to the flash memory cell. The segmented programming pulse...
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7619934 |
Method and apparatus for adaptive memory cell overerase compensation
A method and apparatus are provided for adaptive memory cell overerase compensation. A semiconductor memory device (100) is provided for performing the adaptively compensating erase verify...
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7599229 |
Methods and structures for expanding a memory operation window and reducing a second bit effect
Methods and structures are described for increasing a memory operation window in a charge trapping memory having a plurality of memory cells in which each memory cell is capable of storing multiple...
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7599228 |
Flash memory device having increased over-erase correction efficiency and robustness against device variations
A memory device is provided including circuitry for correcting an over-erased memory cell in the memory device. The memory device may include a substrate. A control gate and a floating gate may be...
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7558122 |
Flash memory device and method of erasing flash memory device
A flash memory device and a method of erasing memory cells in a flash memory device are provided. A first post program operation is performed on erased memory cells having a threshold voltage lower...
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7554852 |
Method of erasing flash memory with pre-programming memory cells only in the presence of a cell leakage
Some embodiments include converting a plurality of memory cells into a first logic state, and converting the plurality of memory cells into a second logic state only if a leakage occurs after the...
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7535771 |
Devices and methods to improve erase uniformity and to screen for marginal cells for NROM memories
A NROM memory device includes an array of memory cells and first and second bit lines. The first and second bit lines are coupled to opposite sides of the memory cells. During an erase operation,...
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