Patents in Class 365/185.240

Matches 51 - 100 out of 780

Match	Document	Document Title
51	7593267	Method of writing data to a semiconductor memory device A method of writing data to a semiconductor memory device with memory cells, each of which stores data defined by threshold voltage thereof in a non-volatile manner, the device having first and...
52	7590005	Program and erase methods with substrate transient hot carrier injections in a non-volatile memory The present invention describes a uniform program method and a uniform erase method of a charge trapping memory by employing a substrate transient hot electron technique for programming, and a...
53	7589999	Method and apparatus for programming non-volatile data storage device A method and apparatus are provided for programming a non-volatile data storage device, in which a fast write operation can be performed using a plurality of page buffers included in the...
54	7586795	Variable reference voltage circuit for non-volatile memory A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates...
55	7586788	Nonvolatile semiconductor memory having voltage adjusting circuit Nonvolatile evaluation memory cells are programmed to be a plurality of different values in advance, respectively. An internal voltage generating circuit can change the value of an internal voltage...
56	7583537	Recording device and HDD built-in recording device A recording device and an HDD built-in recording device each of which can curtail a use area of nonvolatile memory to be used even with the nonvolatile memory having a limit in the number of times...
57	7583535	Biasing non-volatile storage to compensate for temperature variations A body bias is applied to a non-volatile storage system to compensate for temperature-dependent variations in threshold voltage, sub-threshold slope, depletion layer width and/or 1/f noise. A...
58	7583536	Charge loss restoration method and semiconductor memory device A charge loss restoration method detects a memory cell having a tendency of a charge loss within a memory cell array of an electrically writable and erasable nonvolatile semiconductor memory...
59	7580286	Selective threshold voltage verification and compaction Non-volatile memory devices for providing selective compaction verification and/or selective compaction to facilitate a tightening of the distribution of threshold voltages in memory devices...
60	7580292	Method for programming a multilevel memory A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method...
61	7580289	Discharge circuit for a word-erasable flash memory device A non-volatile memory device is proposed. The memory device includes a plurality of blocks of memory cells, each block having a common biasing node for all the memory cells of the block, biasing...
62	7577031	Non-volatile memory with compensation for variations along a word line Variation in programming efficacy due to variation in time constants along a word line that spans across a memory plane is compensated by adjusting the bit line voltages across the plane to modify...
63	7573740	Multi-state memory Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For...
64	7570513	Non-volatile memory and method with power-saving read and program-verify operations A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has features to reduce power consumption during read, and...
65	7570515	Semiconductor memory having electrically erasable and programmable semiconductor memory cells An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected...
66	7570514	Method of operating multi-level cell and integrate circuit for using multi-level cell to store data A method of operating a multi-level cell is provided. The method includes the following the steps. (a) The multi-level cell is operated until a threshold voltage is larger than a pre-programming...
67	7570520	Non-volatile storage system with initial programming voltage based on trial A trial programming process is performed for a first set of one or more non-volatile storage elements to test usage of the non-volatile storage system. Based on this trial programming, a...
68	7566927	Flash memory device A flash memory device may include a memory cell array having a plurality of word lines, bit lines, and memory cells. Each memory cell may be arranged at an intersection of a corresponding word line...
69	7567460	Method of programming flash memory device Flash memory devices include a memory array having a plurality of NAND strings of EEPROM cells therein. A word line driver is provided to improve programming efficiency. The word line driver is...
70	7567455	Method and system for programming non-volatile memory cells based on programming of proximate memory cells A multi-level non-volatile memory device programs cells in each row in a manner that takes into account the coupling from the programming of cells that are proximate the row to be programmed. In...
71	7564719	Method of programming in a flash memory device A method of programming in a flash memory device is disclosed. The method includes programming a first memory cell coupled to an even bit line by applying a first program voltage to a word line,...
72	7564711	Multiple pass write sequence for non-volatile storage A set of non-volatile storage elements are erased to an erased threshold voltage distribution. A multi-pass programming process is performed that programs the set of non-volatile storage elements...
73	7561474	Program verifying method and programming method of flash memory device A duel program verify operation is performed using first and second verify voltages. In order to reduce the width of a threshold voltage distribution during an incremental step pulse program...
74	7561469	Programming method to reduce word line to word line breakdown for NAND flash A NAND architecture non-volatile memory device and programming process programs the various cells of strings of non-volatile memory cells by the application of differing word line pass voltages...
75	7561473	System for performing data pattern sensitivity compensation using different voltage Errors can occur when reading the threshold voltage of a programmed non-volatile storage element due to at least two mechanisms: (1) capacitive coupling between neighboring floating gates and (2)...
76	7561476	Nonvolatile memory, verify method therefor, and semiconductor device using the nonvolatile memory Provided is a nonvolatile memory that realizes a high-speed verify operation. During verify writing/erasing, the writing/erasing and reading are performed at the same time. As to a circuit that...
77	7558149	Method and apparatus to control sensing time for nonvolatile memory One or more clock signals are used to control sense amplifier measurements. For example, multiple threshold voltage measurement types characterize the multiple clock signals, and selecting the...
78	7558122	Flash memory device and method of erasing flash memory device A flash memory device and a method of erasing memory cells in a flash memory device are provided. A first post program operation is performed on erased memory cells having a threshold voltage lower...
79	7558108	3-bit NROM flash and method of operating same Operation of conventional nitride read-only-memory (NROM) cells is modified, such that each charge trapping region of an NROM cell is capable of storing any one of three charge states. For example,...
80	7554851	Reset method of non-volatile memory A reset method of a non-volatile memory is described. The non-volatile memory includes a plurality of cells on a substrate of a first conductivity type, each including a portion of the substrate, a...
81	7554852	Method of erasing flash memory with pre-programming memory cells only in the presence of a cell leakage Some embodiments include converting a plurality of memory cells into a first logic state, and converting the plurality of memory cells into a second logic state only if a leakage occurs after the...
82	7554862	High-speed writable semiconductor memory device A memory cell array has a plurality of series connected memory cells connected to word lines and bit lines and arranged in a matrix. A select transistor selects from the word lines. A control...
83	7551482	Method for programming with initial programming voltage based on trial A trial programming process is performed for a first set of one or more non-volatile storage elements to test usage of the non-volatile storage system. Based on this trial programming, a...
84	7551483	Non-volatile memory with predictive programming In a nonvolatile memory having an array of memory cells, wherein the memory cells are individually programmable to one of a range of threshold voltage levels, there is provided a predictive...
85	7550337	Dual gate dielectric SRAM An SRAM cell structure containing a PFET gate dielectric having a thicker effective oxide thickness (EOT) than an NFET gate dielectric and methods of manufacturing the same is provided. The PFET...
86	7551491	Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof Unit cells of a non-volatile memory device and a method thereof are provided. In an example, the unit cell may include a first memory transistor and a second memory transistor connected to each...
87	7548462	Double programming methods of a multi-level-cell nonvolatile memory A method for double programming of multi-level-cell (MLC) programming in a multi-bit-cell (MBC) of a charge trapping memory that includes a plurality of charge trapping memory cells is provided....
88	7548464	Method for setting programming start bias for flash memory device and programming method using the same A method for setting a programming start bias for a flash memory device to perform a programming operation is provided. First, the method performs pre-programming to change a threshold voltage...
89	7545675	Reading non-volatile storage with efficient setup A process for reading data (including verifying during programming) from a selected non-volatile storage elements of a group (e.g., NAND string) of non-volatile storage elements includes...
90	7542350	Methods of restoring data in flash memory devices and related flash memory device memory systems Methods for setting a read voltage in a memory system which comprises a flash memory device and a memory controller for controlling the flash memory device, comprise sequentially varying a...
91	7542344	Non-volatile memory device and self-compensation method thereof A non-volatile memory device includes a memory cell array at least one block having a plurality of memory cells, and at least one reference cell with respect to each block, an X decoder and a Y...
92	7539067	Semiconductor integrated circuit device A semiconductor integrated circuit device includes a data circuit and a group of bit line application voltage terminals to which different voltages are applied. The data circuit holds program data...
93	7539057	Erase and program method of flash memory device for increasing program speed of flash memory device Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which...
94	7539064	Precharge circuit of semiconductor memory apparatus A precharge circuit of a semiconductor memory apparatus includes a first precharge unit and a second precharge unit. The first precharge unit applies a first core voltage to a pair of local...
95	7539062	Interleaved memory program and verify method, device and system An interleaved memory programming and verification method, device and system includes a memory array including first and second memory banks of memory cells. The memory device further includes a...
96	7539052	Non-volatile multilevel memory cell programming Embodiments of the present disclosure provide methods, devices, modules, and systems for programming an array of non-volatile multilevel memory cells to a number of threshold voltage ranges. One...
97	7536203	Portable memory device and method A portable memory device and method comprises a data storage component; and a wireless receiver operatively connected to the data storage component, wherein the wireless receiver is adapted to...
98	7532519	Semiconductor memory device A semiconductor memory device which is highly reliable, is operable at a low voltage and a high speed, and is produced at a high production yield is provided. A nonvolatile semiconductor memory...
99	7532520	Semiconductor memory device and control method of the same A semiconductor memory device includes a memory cell array, a voltage generating circuit, a memory circuit which stores a reference pulse number of an erase voltage of the memory cell array and a...
100	7529136	Method for compacting the erased threshold voltage distribution of flash memory devices during writing operations A method for operating a flash memory device. The memory device includes a matrix of memory cells each one having a programmable threshold voltage defining a value stored in the memory cell. The...

Matches 51 - 100 out of 780

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