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7391649 Page buffer and non-volatile memory device including the same  
In one aspect, a non-volatile memory device includes a non-volatile memory cell array and a page buffer. The page buffer includes a sense node selectively connected to a bit line of the memory cell...
7391648 Low voltage sense amplifier for operation under a reduced bit line bias voltage  
A regulated charge pump, regulated by a plurality of capacitor boost stages and separate from the memory device supply voltage (V cc ), generates a regulated voltage (V SA ) over a range of supply...
7391645 Non-volatile memory and method with compensation for source line bias errors  
Source line bias is an error introduced by a non-zero resistance in the ground loop of the read/write circuits. During sensing the source of a memory cell is erroneously biased by a voltage drop...
7391633 Accelerated searching for content-addressable memory  
A sensing circuit for use with a CAM circuit including multiple match lines and multiple CAM cells connected to the match lines includes at least one charge sharing circuit and at least one...
7379342 Flash memory device being programmed and verified using voltage higher than target/read threshold voltage to achieve uniform threshold voltage characteristic  
A program operation and a program verification operation are repeatedly performed. The program verification operation is performed on memory cells including pass cells to obtain a uniform...
7379332 Systems-on-chips including programmed memory cells and programmable and erasable memory cells  
An integrated circuit memory device includes programmed memory cells and programmable and erasable memory cells. The memory device includes a first memory array block in which programmed memory...
7376033 Semiconductor device and programming method therefor  
There is provided a semiconductor device including regular cells ( 16 ) disposed in a regular sector ( 10 ) and connected to a word line ( 14 ), and a plurality of reference cells ( 26 ) used in...
7372737 Nonvolatile memory and method of driving the same  
The nonvolatile memory according to the present invention can precisely read information included in a memory transistor subject to a shift phenomenon because electrical read is performed on the...
7372713 Match sensing circuit for a content addressable memory device  
A Content Addressable Memory (CAM) device with an improved match sensing circuit is provided. The CAM is provided with a dummy cell and a respective dummy match line, as well as a reference dummy...
7369442 Erase discharge method of memory device and discharge circuit performing the method  
A method for discharging an erase voltage of a semiconductor memory device and discharge circuit for performing the method, the method including performing a first discharge on a common source line...
7369441 Sensing circuit for multi-level flash memory  
A sensing circuit for multi-level flash memory is disclosed. The advantages of the sensing circuit are reducing the circuit size, reducing the testing time for tuning reference voltage and...
7362616 NAND flash memory with erase verify based on shorter evaluation time  
A non-volatile memory device is proposed. The non-volatile memory device includes a plurality of memory cells each one having a programmable threshold voltage, and means for reading a set of...
7359247 Read-out circuit in semiconductor memory device  
A read-out circuit comprises a read-out voltage generator circuit converting a memory cell current into a read-out voltage, a reference voltage generator circuit supplying a reference memory cell...
7359246 Memory device with a ramp-like voltage biasing structure based on a current generator  
A memory device includes a plurality of memory cells each one for storing a value, at least one reference cell, biasing means for biasing a set of selected memory cells and the at least one...
7355915 Memory circuit with supply voltage flexibility and supply voltage adapted performance  
The inventive memory circuit comprises a plurality of memory cells. The memory circuit further comprises a memory access means being controlled by at least one control signal. In addition, a...
7355903 Semiconductor device including memory cells and current limiter  
A semiconductor device, including a memory cell having a control gate, a source and drain; and a current limiting circuit coupled to the source. The current limiting circuit may be configured to...
7352627 Method, system, and circuit for operating a non-volatile memory array  
As part of the present invention, a memory cell may be operated using reference cells having a threshold offset circuit. According to some embodiments of the present invention, a threshold offset...
7349276 Readout circuit and nonvolatile semiconductor memory device  
A readout circuit has: a sense amplifier circuit configured to sense a data stored in a memory cell transistor based on a current flowing through the memory cell transistor and a reference current...
7342832 Bit line pre-settlement circuit and method for flash memory sensing scheme  
A flash memory array includes a reference bit line on which a reference current is imposed. During read operation, bit lines selected for reading are connected to current-to-voltage converters,...
7336540 Indirect measurement of negative margin voltages in endurance testing of EEPROM cells  
An electronic test structure and method for testing non-volatile memory cells. The structure includes a first transistor coupled in series to a floating gate transistor whereby a source of the...
7333367 Flash memory devices including multiple dummy cell array regions  
Methods for erasing an integrated circuit memory device having a cell array region that includes a main cell array region, a first dummy cell array region on a first side of the main cell array...
7330376 Method for memory data storage by partition into narrower threshold voltage distribution regions  
A method for data storage of a memory unit and a memory unit using the same are provided in the present invention. The method for data storage of a memory unit includes: first, dividing a memory...
7330374 Nonvolatile semiconductor memory device, such as an EEPROM or a flash memory, with reference cells  
To set a threshold of a reference cell in short time in a semiconductor memory device using a variable threshold type nonvolatile memory cell as a reference current/voltage generating unit, a...
7327609 Methods of program-verifying a multi-bit nonvolatile memory device and circuit thereof  
Methods of verifying a program state may be provided for a non-volatile memory device including a multi-bit memory cell transistor providing more than two different program states. More...
7324382 Current-mode sensing structure used in high-density multiple-port register in logic processing and method for the same  
A current-mode sensing structure used in a high-density multiple-port register in logic processing and a method for the same are proposed. First, a reference current is defined by a dummy word line...
7324380 Method for trimming the temperature coefficient of a floating gate voltage reference  
A voltage reference circuit provides a reference voltage that can be precisely programmed. The threshold voltage of a first non-volatile memory (NVM) transistor is programmed while coupled in...
7324374 Memory with a core-based virtual ground and dynamic reference sensing scheme  
A core-based multi-bit memory ( 400 ) having a dual-bit dynamic referencing architecture ( 408, 410 ) fabricated on the memory core ( 401 ). A first reference array ( 408 ) and a second reference...
7321515 Memory device and control method therefor  
An access identification circuit ( 4 ) identifies a first access operation or a second access operation and outputs an identification signal S. During the first access operation, stored data is...
7321513 Semiconductor device and method of generating a reference voltage therefor  
A semiconductor device includes at least one reference cell ( 6 ), a cascode circuit ( 8 ) that has at least two current mirror circuits ( 30, 33 and 30, 34 ) and outputs voltages dependent on a...
7321509 Compensating for coupling in non-volatile storage  
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge...
7315482 Memory device with a plurality of reference cells on a bit line  
In accordance with one embodiment of the invention, a memory device comprises an array of memory cells arranged into word lines and bit lines, with a sense amplifier and a plurality of reference...
7315475 Non-volatile semiconductor memory device  
A sense amplifier has first and second input nodes. A reference memory cell is connected to the first input node. To the second input node, a constant current source circuit and a main memory cell...
7313019 Step voltage generation  
A step voltage generator includes multiple trainable voltage references. Each of the trimmable voltage references uses a flash cell with a variable threshold voltage and a feedback loop to trim a...
7307885 Multi-value nonvolatile semiconductor memory device equipped with reference cell and load balancing circuit  
A nonvolatile semiconductor memory device includes a plurality of memory cells holding memory cell information, a plurality of bit lines connected to the plurality of memory cells, the plurality of...
7305513 Circuit for preventing nonvolatile memory from over-erase  
A method for preventing the over-erase in a nonvolatile memory comprises the following steps. First, at least one normal cell of the nonvolatile memory and at least one reference cell that...
7301815 Semiconductor memory device comprising controllable threshould voltage dummy memory cells  
The present invention provides a semiconductor memory device capable of preventing a defect caused by falling of a word line and deterioration in patterning precision due to disturbance of the...
7301814 System and method for avoiding offset in and reducing the footprint of a non-volatile memory  
A system and method for avoiding offset in and reducing the footprint of a non-volatile memory that has a plurality of memory bank circuits. Each memory bank circuit has memory cells coupled to...
7301807 Writable tracking cells  
The present invention presents several techniques for using writable tracking cells. Multiple tracking cells are provided for each write block of the memory. These cells are re-programmed each time...
7289368 Control of voltages during erase and re-program operations of memory cells  
A method for verifying an array cell of a memory device may include determining after each erase pulse or program pulse the threshold of a cell addressed through a selected array word-line and...
7289365 Nonvolatile semiconductor memory device in which write and erase threshold voltages are set at levels symmetrical about neutral threshold voltage of cell transistor  
A semiconductor device includes a memory cell and driver. The memory cell has a cell transistor which has one end of a current path connected to a bit line and stores data by storing charges in a...
7289359 Systems and methods for using a single reference cell in a dual bit flash memory  
A dual bit flash device comprising a core cell array, each cell of the core cell array is configured to store two bits of data, and a single reference array, each cell of the single reference array...
7286414 Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell  
Memory states of a multi-bit memory cell are demarcated by generating read reference signals having levels that constitute boundaries of the memory states. The read reference signals may be...
7283397 Flash EEprom system capable of selective erasing and parallel programming/verifying memory cell blocks  
A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. A chunk of user data is programmed into a group of...
7283396 System and method for matching resistance in a non-volatile memory  
A method and system for approximating resistance in a non-volatile memory has a memory matrix. The memory matrix has a plurality of memory cells and a plurality of memory source lines that are...
7280405 Integrator-based current sensing circuit for reading memory cells  
Near-ground sensing of non-volatile memory (NVM) cells is performed on a selected NVM cell by applying a potential to a first terminal, coupling a second terminal to ground, and then decoupling the...
7280404 Nonvolatile semiconductor memory device that erases stored data after a predetermined time period without the use of a timer circuit  
A nonvolatile semiconductor memory device is characterized by including a memory cell to store data, a first reference cell, a check circuit to check a threshold of the first reference cell, and an...
7277342 Semiconductor memory having dummy bit line precharge/discharge circuit  
Reset dummy cells which change the load capacitance of a dummy read line DRD according to stored information are provided. Memory information are set to the reset dummy cells according to...
7272049 Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells  
A NAND-type nonvolatile semiconductor memory device comprising a cell string that comprises a dummy cell interposed between and connected in series to a string selection transistor and a...
7272048 Nonvolatile memory device controlling common source line for improving read characteristic  
A non-volatile memory device capable of improving a read characteristic includes memory blocks, each memory block having a plurality of word lines. A common source line is arranged to be shared by...
7266015 Redundancy substitution method, semiconductor memory device and information processing apparatus  
A redundancy substitution method for memory cells within an electrically writable and erasable semiconductor memory device, includes detecting a memory cell having a tendency of a charge loss...
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