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9042169 Shifting cell voltage based on grouping of solid-state, non-volatile memory cells  
Cells of a solid-state, non-volatile memory are assigned to one of a plurality of groups. Each group is defined by expected symbols stored in the cells in view of actual symbols read from the...
9036429 Nonvolatile memory device and operating method thereof  
A nonvolatile memory device including a memory cell arranged at a region where a word line and a bit line cross each other; a control signal generator configured to be enabled while the...
9036417 On chip dynamic read level scan and error detection for nonvolatile storage  
Techniques for efficiently programming non-volatile storage are disclosed. A second page of data may efficiently be programmed into memory cells that already store a first page. Data may be...
9036413 Flash memory reference voltage detection with tracking of cross-points of cell voltage distributions using histograms  
Cross-points of flash memory cell voltage distributions are determined by reading data from a portion of the flash memory two or more times using two or more different candidate reference voltages...
9030873 Semiconductor device and method of operating the same  
A method of operating a semiconductor device includes storing a supplying condition of a read voltage inputted from an external source into an internal register to perform a read operation of...
9013923 Semiconductor device and operating method thereof  
A method of operating a semiconductor device includes programming one of a drain dummy cell and a source dummy cell which are included in a cell string; and coupling a bit line to the cell string...
9007839 Nonvolatile memory device performing read operation with variable read voltage  
A method of reading a nonvolatile memory device comprises applying a read voltage to a memory cell array to read selected memory cells, counting a number of the selected memory cells that have a...
9007845 Non-volatile semiconductor memory device  
In performing a read operation of a memory transistor, a control circuit supplies a first voltage to a selected word line connected to a selected memory transistor. A second voltage is supplied to...
9007842 Retention detection and/or channel tracking policy in a flash memory based storage system  
A method for determining a retention time in a solid state device (SSD), comprising the steps of providing a plurality of write operations to a memory, determining a reference voltage for each of...
9001553 Resistive devices and methods of operation thereof  
A method of operating a resistive switching device includes applying a program stress to a two terminal resistive memory unit. The program stress is applied at a program voltage configured to...
9001588 Sense amplifier for nonvolatile semiconductor memory device  
A sense amplifier circuit of a nonvolatile semiconductor memory device is provided. The sense amplifier circuit includes a reference voltage generator, a sensing voltage generator and a...
8995200 Non-volatile memory (NVM) with dynamically adjusted reference current  
A sense amplifier is configured to sense a current from a selected bit cell of a non-volatile memory array and compare the sensed current to a reference current to determine a logic state stored...
8995213 Nonvolatile memory device and operating method thereof  
A nonvolatile memory device includes a memory cell array including a main cell area and a retention flag cell area, a retention check unit configured to compare a read result for retention flag...
8988942 Methods for extending the effective voltage window of a memory cell  
Methods for operating a non-volatile storage system in which cross-coupling effects are utilized to extend the effective threshold voltage window of a memory cell and to embed additional...
8982634 Flash memory  
The present invention provides a flash memory including a memory cell, a current limiter and a program voltage generator. The memory cell is programmed in response to a program current and a...
8982635 Semiconductor memory device and writing method thereof  
A writing method of a semiconductor memory device includes applying a plurality of program voltages sequentially generated to a selected word line, and applying any one of a plurality of source...
8976583 Non-volatile semiconductor memory device and reading method thereof  
Provided are a semiconductor memory device has improved read disturbance characteristics as well as improved retention characteristics at a high temperature, and a reading method thereof. The...
8971122 Group based read reference voltage management in flash memory  
Apparatus, methods, and other embodiments associated with group based read reference voltage management in flash memory are described. According to one embodiment, an apparatus includes a...
8971121 Method and devices for memory cell erasure with a programming monitor of reference cells  
Embodiments of the present disclosure provide methods, devices, modules, and systems for operating memory cells. One method includes: performing an erase operation on a selected group of memory...
8964477 Nonvolatile memory, electronic apparatus, and verification method  
A gate voltage generator which supplies first gate voltage at erase verify time to a first selected word line to which a first memory cell included in N memory cells is connected, which supplies...
8964480 Detecting programmed word lines based on NAND string current  
A number (Nwl) of programmed word lines in a block of NAND strings is determined by measuring a reference combined current (Iref) in the block when all of the memory cells are in a conductive...
8964449 Semiconductor memory device  
A semiconductor memory device selects one of a plurality of memory cells as a dummy memory cell. The dummy memory cell is connected to a bit line that is complementary to a bit line connected to a...
8953373 Flash memory read retry using histograms  
Upon a read error, a flash memory controller adjusts a candidate reference voltage on successive read retries until either a read error no longer occurs or an optimal reference voltage is...
8953383 Operating circuit controlling device, semiconductor memory device and method of operating the same  
A semiconductor memory device is kept in a busy state by controlling a ready/busy pad when a detection signal is output since an external voltage is less than a reference voltage, prevents...
8953376 Nonvolatile memory device and read method thereof  
According to example embodiments, a read method of a nonvolatile memory device includes Disclosed is a read method of a nonvolatile memory device which includes selecting one of a plurality of...
8953384 Sense amplifier for flash memory  
A sense amplifier has a reference cell current branch in which a reference cell determines a reference cell current, a column load converts the reference cell current to a reference voltage, and a...
8953375 Semiconductor memory device and operation method thereof  
A semiconductor memory device includes an information generation unit configured to convert positions of threshold voltages of memory cells in threshold voltage distributions based on...
8942042 Nonvolatile memory device and a method of adjusting a threshold voltage of a ground selection transistor thereof  
A method of adjusting a threshold voltage of a ground selection transistor in a nonvolatile memory device includes providing a first voltage to a gate of a first ground selection transistor in a...
8937838 Finding optimal read thresholds and related voltages for solid state memory  
An expected value associated with stored values in solid state storage, as well as a set of three or more points are obtained where the three or more points include a voltage and a value...
8934303 Semiconductor memory device and method of operating the same  
A semiconductor memory device is operated by, inter alia: precharging a bit line, providing a first voltage to a coupling circuit for coupling the bit lines and cell strings of a plurality of...
8934307 Voltage generator of nonvolatile memory device  
A voltage generator of a nonvolatile memory device includes a pump circuit for generating a pump output voltage by performing a pumping operation and raise or maintain the output voltage in...
8935117 Circuit and method for measuring voltage  
A testing circuit in an integrated circuit indirectly measures a voltage at a node of other circuitry in the integrated circuit. The testing circuit includes a transistor having a control...
8929147 Determining threshold voltage distribution in flash memory  
Methods, apparatuses, and systems for comparing threshold voltages of a plurality of flash memory cells to a plurality of reference voltages. A number of flash memory cells having threshold...
8929141 Three-dimensional NAND memory with adaptive erase  
Erasing memory cells in certain 3-D NAND charge-storage memory arrays is achieved by rapidly charging vertical conductors using Gate Induced Drain Leakage (GIDL) current generated in select...
8929154 Layout of memory cells  
A semiconductor structure includes a first strap cell, a first read port, and a first VSS terminal. The first strap cell has a first strap cell VSS region. The first read port has a first read...
8924824 Soft-decision input generation for data storage systems  
An error management system for a data storage device can generate soft-decision log-likelihood ratios (LLRs) using multiple reads of memory locations. 0-to-1 and 1-to-0 bit flip count data...
8923069 Memory having self-timed edge-detection write tracking  
A memory includes a self-timed column imitating a bitline loading, a self-timed row imitating a self-timed word-line, a self-timed bitcell performing a dummy write in a write cycle, a writer...
8923068 Low margin read operation with CRC comparision  
A method for a low margin read operation that compares CRC codes receives known data and a CRC code generated from the known data. A CRC code is generated from data read from a memory cell at a...
8923065 Nonvolatile memory and method with improved I/O interface  
Each I/O channel between a controller and one or more memory dice of a memory device has a driver on one end and a receiver at the other end. The receiver is optionally terminated with a pseudo...
8917552 Nonvolatile semiconductor storage device  
A control circuit for a nonvolatile semiconductor storage device, during a write operation, configures multiple bit lines so that bit lines that are adjacent to select bit lines are nonselect bit...
8913438 Adaptive architecture in a channel detector for NAND flash channels  
An apparatus comprising a memory configured to store data and a controller. The controller may be configured to process a plurality of input/output requests to read/write to/from the memory. The...
8908437 Methods and devices for determining sensing voltages  
The present disclosure includes methods and devices for determining sensing voltages. One such method includes comparing data associated with a number of template distributions to data associated...
8902652 Systems and methods for lower page writes  
In a Multi Level Cell (MLC) memory array block in which lower pages are written first, before any upper pages, the lower page data is subject to an exclusive OR (XOR) operation so that if any...
8902628 Resistive memory device and sensing margin trimming method thereof  
A resistive memory device and a sensing margin trimming method are provided. The resistive memory device includes a memory cell array and a trimming circuit. The memory cell array has a plurality...
8897076 Non-volatile memory systems having at least one pair of memory cells  
In a non-volatile memory system, a plurality of main memory cells for storing data is arranged in a data cell array and a plurality of reference memory cells is arranged in a reference cell array....
8891297 Memory cell sensing  
This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first cell coupled to a first data line in response to a request to sense a data state of a...
8891306 Semiconductor memory device  
A semiconductor memory device includes stacked memory strings in which at least some adjacent memory strings share a common source line. During a read operation for a selected memory string, a...
8885415 Determining optimal reference voltages for progressive reads in flash memory systems  
A system including a read module to perform a first read operation to determine a state of a memory cell, and in response to a first failure to decode data read from the memory cell, perform...
8885427 Precharge circuit and non-volatile memory device  
A precharge circuit includes a precharge unit configured to apply a voltage of a precharge voltage terminal to a data line during a precharge operation, and a sensing unit configured to disable...
8879326 Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell  
A nonvolatile semiconductor memory device having a plurality of electrically rewritable nonvolatile memory cells connected in series together includes a select gate transistor connected in series...