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8184484 Semiconductor memory device including stacked gate having charge accumulation layer and control gate and method of writing data to semiconductor memory device  
A semiconductor memory device includes memory cells, word lines, a driver circuit, and a control circuit. The driver circuit repeats a programming operation of selecting any one of the word lines,...
8184483 Nonvolatile memory device and method of programming the same  
A nonvolatile memory device includes a memory cell array, including a first memory cell group configured to store data and a second memory cell group configured to store operation information,...
8179726 Method and apparatus for programming flash memory  
A method and apparatus that provides the ability to control programming pulses having different widths and/or voltages in a flash memory device. The widths and/or voltage levels of programming...
8179720 NAND flash memory  
A NAND flash memory includes a NAND string and a control circuit, wherein in a write operation, the control circuit applies a writing voltage between a control gate of a selected memory cell to be...
8179723 Non-volatile memory with boost structures  
A non-volatile memory having boost structures. Boost structures are provided for individual NAND strings and can be individually controlled to assist in programming, verifying and reading...
8174896 Nonvolatile memory device and method of operating the same  
A nonvolatile memory device comprises a page buffer unit, a counter, a program pulse application number storage unit, and a program start voltage setting unit. The page buffer is configured to...
8174895 Programming non-volatile storage with fast bit detection and verify skip  
A set of non-volatile storage elements are subjected to a programming process in order to store data. During the programming process, one or more verification operations are performed to determine...
8174894 Program method of flash memory device  
A program method of a flash memory device includes inputting a first data and a second data to a page buffer coupled to memory cells including an even page and an odd page, pre-programming a first...
8174899 Non-volatile semiconductor memory device  
When data is written to a memory cell transistor, a write controller controls in such a manner that a verification operation subsequent to a program operation is carried out while a program voltage...
8174889 Programming memory devices  
A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is...
8174902 Flash memory and a method for programming the flash memory in which a bit line setup operation is executed simultaneously with a channel pre-charge operation  
A method, device and system are provided for programming a flash memory device, the method including executing a bit line setup operation, and executing a channel pre-charge operation...
8174897 Programming in a memory device  
Methods for programming a memory device and memory devices are provided. According to at least one such method, a selected memory cell is programmed by a series of programming pulses. The series of...
8169832 Methods of erase verification for a flash memory device  
Methods and apparatus are disclosed, such as those involving a flash memory device that includes a memory block. The memory block includes a plurality of data lines extending substantially parallel...
8164952 Nonvolatile memory device and related method of programming  
A nonvolatile memory device comprises a memory cell array comprising a plurality of memory cells, a voltage generator configured to generate voltages to program the plurality of memory cells, and a...
8154921 Dynamic and adaptive optimization of read compare levels based on memory cell threshold voltage distribution  
A process is performed periodically or in response to an error in order to dynamically and adaptively optimize read compare levels based on memory cell threshold voltage distribution. One...
8149631 Non-volatile semiconductor storage device  
For data erase from an electrically erasable and programmable non-volatile memory cell, the following operations are performed: an erase operation to apply an erase pulse voltage to a memory cell...
8149624 Method and apparatus for reducing read disturb in memory  
Various aspects of a NAND memory include have multiple versions of a high threshold voltage distribution—a version with a reduced maximum, and another version. The version with a reduced maximum h...
8149625 Nonvolatile memory device, operating method thereof, and memory system including the same  
A nonvolatile memory device includes a memory cell array; a voltage generator configured to provide stepwise increasing step pulses for varying logic states of memory cells in the memory cell...
8149626 Threshold voltage digitizer for array of programmable threshold transistors  
A method and system for determining a respective threshold voltage of each of a plurality of transistors in a memory array. The method includes: applying a ramp voltage to gates of the plurality of...
8144517 Multilayered nonvolatile memory with adaptive control  
A method and device for adaptive control of multilayered nonvolatile semiconductor memory are provided, the device including memory cells organized into groups and a control circuit having a...
8144511 Selective memory cell program and erase  
Techniques are disclosed herein for programming memory arrays to achieve high program/erase cycle endurance. In some aspects, only selected word lines (WL) are programmed with other WLs remaining...
8144510 Method and system for programming multi-state memory  
In a multi-level memory cell, when data to be programmed arrives, the cell is programmed to the lowest-charge state in which any bit position that is being programmed or has already been programmed...
8139421 Erase degradation reduction in non-volatile memory  
Methods for erasing a memory device and memory systems are provided, such as those including a non-volatile memory device is erased by using an intermediate erase step prior to a normal erase step....
8139419 Programming methods and memories  
Methods of programming memory cells, and memories incorporating such methods, are disclosed. In at least one embodiment, programming is accomplished by applying a set of incrementing program pulses...
8139406 Non-volatile memory system and programming method of the same  
A programming method for a non-volatile memory system includes storing multi-page program data and buffering the multi-page program data from a page buffer to a memory block and programming the...
8130552 Multi-pass programming for memory with reduced data storage requirement  
Coupling effects between adjacent floating gates in a non-volatile storage device are reduced in a multi-pass programming operation, while reducing program data storage requirements. In one...
8130551 Extra dummy erase pulses after shallow erase-verify to avoid sensing deep erased threshold voltage  
An erase operation for non-volatile memory includes first and second phases. The first phase applies a series of voltage pulses to a substrate, where each erase pulse is followed by a verify...
8130568 Method of programming nonvolatile memory device  
A method of programming a nonvolatile memory device includes performing a first LSB program operation on memory cells coupled to a selected word line in order to store least significant bit (LSB)...
8130556 Pair bit line programming to improve boost voltage clamping  
A programming technique reduces program disturb in a set of non-volatile storage elements by programming using selected bit line patterns which increase the clamped boosting potential of an...
8125818 Method of programming variable resistance element and variable resistance memory device using the same  
A method of programming a variable resistance element to be operated with stability and at a high speed is provided. The method programs a nonvolatile variable resistance element (10) including a...
8120963 Method and system for program pulse generation during programming of nonvolatile electronic devices  
Aspects for program pulse generation during programming of nonvolatile electronic devices include providing a configurable voltage sequence generator to manage verify-pulse and pulse-verify...
8120952 Memory device with a decreasing dynamic pass voltage for reducing read-disturb effect  
The present disclosure includes methods, devices, modules, and systems for operating memory cells. One method embodiment includes applying sensing voltages to selected access lines for sensing...
8120967 Semiconductor memory device and related method of programming  
A method of programming a nonvolatile memory device comprises applying a program voltage to a selected wordline to program selected memory cells, and performing a verify operation by applying a...
8120954 Method, apparatus, and system for erasing memory  
Methods, apparatus, and systems may operate to perform a pre-programming operation on a plurality of multiple level memory cells of a memory device. An example of applying such a pre-programming...
8116131 Programming method for non-volatile memory device  
Provided is a method of programming a non-volatile memory device. The method includes applying a first programming pulse to a corresponding wordline of the non-volatile memory device, applying a...
8116137 Memory cell operation  
Embodiments of the present disclosure provide methods, devices, modules, and systems for programming memory cells. One method includes determining a quantity of erase pulses used to place a group...
8116140 Saw-shaped multi-pulse programming for program noise reduction in memory  
In a memory system, a programming waveform reduces program noise by using sets of multiple adjacent sub-pulses which have a saw-tooth shape. In a set, an initial sub-pulse steps up from an initial...
8116135 Non-volatile memory cell read failure reduction  
The present disclosure includes various method, device, and system embodiments for reducing non-volatile memory cell read failures. One such method embodiment includes performing a first read...
8111555 NAND step voltage switching method  
Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow...
8111550 M+N bit programming and M+L bit read for M bit memory cells  
A memory device and programming and/or reading process is described that programs and/or reads the cells in the memory array with higher threshold voltage resolution than required. In programming...
8111554 Starting program voltage shift with cycling of non-volatile memory  
A system is disclosed for programming non-volatile storage that improves performance by setting the starting programming voltage to a first level for fresh parts and adjusting the starting...
8111548 Programming non-volatile storage using binary and multi-state programming processes  
A non-volatile storage system stores data by programming the data as binary data into blocks that have not yet been programmed with multi-state data and have not yet been programmed with binary...
8111556 Nonvolatile memory device and method of operating the same  
A nonvolatile memory device and a method of operating the same. The nonvolatile memory device includes a memory cell array including memory cells for storing data, a temperature sensor and a...
8102714 Programming methods for multi-level memory devices  
A method is provided for programming a memory cell. The memory cell is fabricated on a substrate and comprises a source region, a drain region, a floating gate, and a control gate. The memory cell...
8089815 Programming memory with bit line floating to reduce channel-to-floating gate coupling  
During programming of storage elements, channel-to-floating gate coupling effects are compensated to avoid increased programming speed and threshold voltage distribution widening. Programming speed...
8085586 Wear level estimation in analog memory cells  
A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After...
8085595 Nonvolatile memory devices and methods of controlling the wordline voltage of the same  
A nonvolatile memory device includes an array of memory cells arranged in rows and columns, the array of memory cells having wordlines associated therewith. A wordline voltage controller determines...
8085596 Reducing noise in semiconductor devices  
The present disclosure includes methods, devices, modules, and systems for reducing noise in semiconductor devices. One method embodiment includes applying a reset voltage to a control gate of a...
8085589 Flash memory device and program recovery method thereof  
A method of programming a flash memory includes programming memory cells connected to a selected word line by applying a first voltage to the selected word line and a second voltage to non-selected...
8081514 Partial speed and full speed programming for non-volatile memory using floating bit lines  
Partial speed and full speed programming are achieved for a non-volatile memory system. During a program operation, in a first time period, bit lines of storage elements to be inhibited are...
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