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7391647 Non-volatile memory in CMOS logic process and method of operation thereof  
A non-volatile memory (NVM) cell fabricated on a semiconductor substrate, and including a floating gate electrode (which extends at least partially over all active regions of the NVM cell). The NVM...
7388787 Reference current generator  
In a reference current generator, a current mirror has a referent branch with a first current flowing thereon and a mirror branch to produce a second current by mirroring the first current, a first...
7388785 Method for extracting the distribution of charge stored in a semiconductor device  
A method is described for extracting the spatial distribution of charge stored in a charge-trapping layer of a semiconductor device. The method comprises the steps of performing a first...
7388779 Multiple level programming in a non-volatile device  
The programming method of the present invention minimizes program disturb by initially programming cells on the same wordline with the logical state having the highest threshold voltage. The...
7385868 Method of refreshing a PCRAM memory device  
A method for refreshing PCRAM cells programmed to a low resistance state and entire arrays of PCRAM cells uses a simple refresh scheme which does not require separate control and application of...
7385847 Semiconductor device  
A semiconductor device includes an electrical circuit formed on a substrate; a level detector outputting a first level signal which has a signal level based on power supply voltage and which...
7385846 Reduction of adjacent floating gate data pattern sensitivity  
The method for programming non-volatile memory cells erases the memory cells to be programmed. The memory cells are then programmed to a reduced floating gate voltage that takes into account...
7382656 Nonvolatile memory with program while program verify  
A page mode program sequence is described that includes first and second bias applying cycles. In the first cycle, a program bias is applied to a first part of a page of memory cells, while a...
7382653 Electrically rewritable non-volatile semiconductor memory device  
A first selection transistor is connected between one end of a memory cell group and a bit line. A second selection transistor which has a gate length shorter than a gate length of the first...
7382650 Method and apparatus for sector erase operation in a flash memory array  
A memory device is provided which includes a substrate, a common P-well isolated from the substrate, a plurality of sectors, and a common sector selection transistor configured to select one of the...
7379346 Erase inhibit in non-volatile memories  
A non-volatile memory and method for its operation that can reduce the amount of disturb in non-selected cells during an erase process are presented. For a set of storage elements formed over a...
7379338 Method and system for regulating a program voltage value during multilevel memory device programming  
Regulating a program voltage value during multilevel memory device programming includes utilizing a program path duplicate in an output pump regulator circuit. Further, the output pump regulator...
7379337 Flash memory device and read operation method thereof  
A flash memory device having a function of selectively changing a precharge voltage for a sensing node and a read operation method thereof. The flash memory device includes a memory cell array, a...
7379335 Nonvolatile semiconductor memory device and a method for programming NAND type flash memory  
A non-volatile semiconductor memory device comprise a memory cell array having a plurality of memory cell units each having a plurality of electrically-programmable memory cell connected in series,...
7376019 Nonvolatile semiconductor memory  
The nonvolatile semiconductor memory includes a plurality of memory devices for storing data, a write circuit for supplying a high voltage for data writing, a plurality of selectors connected...
7376017 Flash memory device and program method thereof  
A flash memory device which comprises a memory cell array having memory cell arranged in rows and columns; a word line voltage generator circuit configured to generate a program voltage, a...
7376015 Nonvolatile memory, semiconductor device, and method of programming to nonvolatile memory  
Disclosed is a nonvolatile memory with a shortened total write time, capable of stably writing data by making a write current constant while reducing fluctuations in a voltage generated by a...
7376009 Semiconductor memory device which stores plural data in a cell  
A memory cell array is configured to have a plurality of memory cells arranged in a matrix, each of the memory cells being connected to a word line and a bit line and being capable of storing n...
7372740 Semiconductor memory device  
Based on a continuous erase start signal outputted, in response to an inputted continuous erase command, from a continuous erase control circuit, a shift circuit outputs a control signal for giving...
7372736 Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout  
A nonvolatile memory array has a single transistor flash memory cell and a two transistor EEPROM memory cell which maybe integrated on the same substrate. The nonvolatile memory cell has a floating...
RE40311 Zero-power programmable memory cell  
A zero-power electrically erasable and programmable memory cell is implemented in CMOS (complementary metal oxide semiconductor) technology. A P-channel sense transistor has a source coupled to a...
7369436 Vertical NAND flash memory device  
Memory devices, arrays, and strings are included that facilitate the use of vertical floating gate memory cells in NAND architecture memory strings, arrays, and devices. NAND Flash memory strings,...
7366027 Method and apparatus for erasing memory  
The present invention provides a method and apparatus for erasing memory blocks. The apparatus includes a first plurality of memory cells formed in a substrate and a second plurality of memory...
7366020 Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof  
We describe a NAND flash memory device including a memory cell array formed on a substrate including a plurality of cell strings each including a string selecting transistor, a ground selecting...
7366019 Nonvolatile memory  
There is provided a non-volatile memory capable of being supplied with two varieties of externally supplied voltages, stabilizing the operation thereof, at a voltage in the vicinity of a threshold...
7362616 NAND flash memory with erase verify based on shorter evaluation time  
A non-volatile memory device is proposed. The non-volatile memory device includes a plurality of memory cells each one having a programmable threshold voltage, and means for reading a set of...
7362615 Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices  
A NAND flash memory device incorporates a unique booster plate design. The booster plate is biased during read and program operations and the coupling to the floating gates in many cases reduces...
7362609 Memory cell  
A one-transistor (1T) NVRAM cell that utilizes silicon carbide (SiC) to provide both isolation of non equilibrium charge, and fast and non destructive charging/discharging. To enable sensing of...
7359251 Non-volatile semiconductor memory device, erase method for same, and test method for same  
A non-volatile semiconductor memory device includes a memory cell array and an operation control circuit. The memory cell array includes a plurality of non-volatile memory cells that are...
7355903 Semiconductor device including memory cells and current limiter  
A semiconductor device, including a memory cell having a control gate, a source and drain; and a current limiting circuit coupled to the source. The current limiting circuit may be configured to...
7355893 Semiconductor memory device and method for writing to semiconductor memory device  
The semiconductor memory device comprising: an n-channel memory cell transistor including: a first diffused region and a second diffused region formed in a semiconductor substrate; a charge storage...
7355891 Fabricating bi-directional nonvolatile memory cells  
A memory transistor having a pair of separate floating gates overlying end regions of a channel and a control gate that overlies the floating gates and a central region of the channel effectively...
7355887 Non-volatile semiconductor memory device having non-selected word lines adjacent to selected word lines being charged at different timing for program disturb control  
A non-volatile semiconductor memory device comprises a memory cell array of data-rewritable non-volatile memory cells or memory cell units containing the memory cells, and a plurality of word lines...
7355886 Method of programming, erasing and reading memory cells in a resistive memory array  
The present approach is a method of writing (which may be programming or erasing) data to a selected memory cell of a memory array. The array includes a plurality of word lines, a plurality of bit...
7352632 Non-volatile semiconductor memory device  
A memory cell has a selection transistor constituted of an MOS transistor having a gate electrode and a cell transistor constituted of an MOS transistor having the same polarity as the selection...
7352631 Methods for programming a floating body nonvolatile memory  
A technique to speed up the programming of a non-volatile memory device that has a floating body actively removes holes from the floating body that have accumulated after performing hot carrier...
7352626 Voltage regulator with less overshoot and faster settling time  
A voltage regulator may include an operational-amplifier section, a capacitor connected to an output of the operational-amplifier section, and a switch configured to connect the capacitor to a...
7352625 Semiconductor memory device and memory card  
A semiconductor memory device disclosed herein includes: a first select gate line, a gate electrode of a first select transistor connected to the first select gate line; a second select gate line,...
7349265 Reading method of a NAND-type memory device and NAND-type memory device  
A reading method of a NAND memory device includes the steps of first connecting a first end terminal of a stack of cells to a reference line, second connecting a second end terminal of the stack of...
7349262 Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices  
A method of programming a silicon oxide nitride oxide semiconductor (SONOS) memory device is provided. The SONOS memory device includes a substrate, first and second impurity regions spaced apart...
7348832 Dual-voltage generation system  
A voltage generation system for generating operating voltages for memory devices, especially non-volatile memories, from a single external high voltage source. In one embodiment, the system...
7348829 Slew rate control of a charge pump  
A charge pump system including a clock circuit and a charge pump circuit is provided. The clock circuit provides a first clock with a frequency based on a memory block select signal indicative of...
7345925 Soft erasing methods for nonvolatile memory cells  
Erasure methods for a nonvolatile memory cell that includes a gate electrode on a substrate, source and drain regions in the substrate at respective sides of the gate electrode, and a charge...
7345923 Wordline voltage generation circuit and nonvolatile memory device with the same  
A wordline voltage generation circuit generates an incremental step pulse voltage and includes a first circuit unit connected to a program voltage, a second circuit unit connected between the first...
7345922 Position based erase verification levels in a flash memory device  
The location of a cell to be erase verified is determined. The erase verification threshold voltage is then set. The threshold voltage is changed in response to the cell's location with respect to...
7345919 Semiconductor device that enables simultaneous read and write/read operation  
A semiconductor device includes a memory cell array including a plurality of cores, each of said cores including one block or a plurality of blocks. The semiconductor device further includes a...
7345918 Selective threshold voltage verification and compaction  
Non-volatile memory devices for providing selective compaction verification and/or selective compaction to facilitate a tightening of the distribution of threshold voltages in memory devices...
7345916 Method and apparatus for high voltage operation for a high performance semiconductor memory device  
A method and apparatus are provided for high performance, high voltage memory operations on selected memory cells ( 200 ) of a semiconductor memory device ( 100 ). A high voltage generator ( 106 )...
7345905 Memory device with time-shifting based emulation of reference cells  
A memory device includes a plurality of memory cells and a comparison circuit that compares a set of selected memory cells with at least one reference cell having a threshold voltage. The...
7343239 Program rewriting system and program rewriting method  
Program data stored in the recording medium of a general control apparatus coupled to a network is stored in the recording medium of a control apparatus as a rewritten subject of program data in...
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