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6349059 Method for reading data from a non-volatile memory device with autodetect burst mode reading and corresponding reading circuit  
A method for reading data from an integrated electronic memory device including a non-volatile memory matrix includes supplying the memory with an address of a memory location where a reading is...
6314022 Nonvolatile semiconductor memory device and method for manufacturing the same, microcomputer-mixed flash memory and method for manufacturing the same  
A nonvolatile semiconductor memory device including a plurality of memory cells connected in parallel with each other, each of which has a memory transistor and a selecting transistor connected in...
6310800 Non-volatile semiconductor memory device and method for driving the same  
A non-volatile semiconductor memory device of the present invention includes, on a semiconductor substrate, a plurality of memory cells arranged in a matrix, a plurality of word lines extending in...
6304486 Sensing time control device and method  
A NAND type flash memory device has a reference bit line and a reference page buffer to control sensing time during program and erase verification operations. Each reference memory cell in the...
6297988 Mode indicator for multi-level memory  
A memory device having a plurality of memory cells that are group into at least two group of cells. Each cell is capable of being programmed in at least two modes. A mode indicator is associated...
6288941 Electrically erasable semiconductor non-volatile memory device having memory cell array divided into memory blocks  
An electrically erasable semiconductor nonvolatile memory device has an array of memory cells arranged in rows and columns and one or more information erasure signal generating circuits. Each of...
6266270 Non-volatile semiconductor memory and programming method of the same  
A non-volatile semiconductor memory capable of dealing with eight levels and a method of writing data therein, which can shorten the writing time and perform verify read and normal read operations...
6262914 Flash memory segmentation  
Segmentation of FLASH Memory arrays allows the global and local bit lines to be isolated, greatly reducing global bit line capacitance, reducing bit line stress, and eliminating boot block disturb...
6259625 Method and apparatus for reducing high current chip erase in flash memories  
A method and an apparatus is provided to decrease the erase current level by subdividing the memory array into small segments and cycle through complete address space sequentially during the chip...
6259624 Nonvolatile semiconductor storage device and data writing method thereof  
A nonvolatile semiconductor storage device is disclosed. The device has memory cells for storing data corresponding to threshold voltages that vary corresponding to the amount of electric charge...
6259630 Nonvolatile semiconductor memory device equipped with verification circuit for identifying the address of a defective cell  
A nonvolatile semiconductor memory device has an array of memory cells in columns and rows, and has word lines and bit lines provided in orthogonal directions, the memory cells for each column...
6252803 Automatic program disturb with intelligent soft programming for flash cells  
A method of erasing a flash electrically-erasable programmable read-only memory (EEPROM) device is provided which includes a plurality of memory cells. An erase pulse is applied to the plurality...
6243291 Two-stage pipeline sensing for page mode flash memory  
A method for operating a page mode memory device includes decoding an address defining a page for access and sensing first data on a first portion of the page. The first data is then produced at...
6240020 Method of bitline shielding in conjunction with a precharging scheme for nand-based flash memory devices  
A flash memory device includes an array of core cell blocks and page buffers with supporting input/output circuitry. The flash memory device, in addition, contains a method for shielding the...
6226202 Flash memory card including CIS information  
A flash memory card includes one or a plurality of flash memories and a controller having an interface connected to a host computer to store card attribute information to be presented to the host...
6222767 Synchronous page-mode non-volatile memory with burst order circuitry and method thereof  
A method and apparatus for outputting data stored in a non-volatile memory device. The non-volatile memory device includes a non-volatile memory array, an address input for receiving an address...
6201736 Flash memory with copy and transfer function  
According to the present invention, a flash memory, having a plurality of non-volatile memory cells, comprises: a plurality of cell blocks CBL having the plurality of non-volatile memory cells, a...
6201735 Electrically erasable and programmable nonvolatile semiconductor memory  
Each memory cell of a nonvolatile semiconductor memory, essentially, consists of a one-transistor type memory cell such as a MOSFET having a floating gate electrode. When an electric programming...
6195286 Circuit and method for reading a non-volatile memory  
A circuit and method for reading a non-volatile memory include providing a first random memory reading cycle and performing, at the end of the random reading cycle, a collective page precharge....
6141250 Non-volatile semiconductor memory device  
A non-volatile semiconductor memory device being able to read, write and erase data at a much higher speed. The non-volatile semiconductor memory device used as a flash memory is composed of a...
6141254 Method for programming an EPROM-flash type memory  
This invention relates to a method for programming a Flash-EPROM type memory (1) comprising words of memory cells arranged in rows (23) and columns (31), in which a floating-gate transistor (7)...
6141249 Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time  
An embodiment of the present invention includes a nonvolatile memory system for storing sector information in storage locations within nonvolatile memory organized into blocks, a plurality of...
6134144 Flash memory array  
A novel flash memory array has an array of memory cells with each memory cell being of a floating gate memory transistor with a plurality of terminals. The memory cells are arranged in a plurality...
6118702 Source bias compensation for page mode read operation in a flash memory device  
A page mode memory senses a large number of bits simultaneously. The associated read current creates a source bias in the core cells which alters the sense margin at the sense amplifier. To...
6111792 Non-volatile semiconductor memory device for selective cell flash erasing/programming  
Disclosed herein is a non-volatile semiconductor memory device comprising a mode signal output means for outputting a mode signal for conducting flash programming or flash erasing, a group...
6091633 Memory array architecture utilizing global bit lines shared by multiple cells  
As a specific application of a new memory architecture, an array of non-volatile dual floating gate memory cells is arranged on a semiconductor substrate with global bit lines extending in a...
6072721 Semiconductor nonvolatile memory, method of data programming of same, and method of producing same  
A semiconductor nonvolatile memory device where the source line is selected and the channel portions of NAND strings adjacent in the row direction are charged up to the programming prohibit...
6058042 Semiconductor nonvolatile memory device and method of data programming the same  
A nonvolatile semiconductor memory device having a memory cell in which an amount of charge stored in a charge storage unit changes according to a voltage supplied to a word line and a bit line, a...
6046932 Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM  
A method of and a flash memory device for quenching bitline leakage current during programming and over-erase correction operations. The flash memory cells are organized in an array of I/O blocks...
6026022 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device includes a memory cell array, a plurality of word lines, a plurality of digit lines, a data setting circuit, a write data latch circuit, an X decoder, a...
6021069 Bit latch scheme for parallel program verify in floating gate memory device  
A method for determining successful programming of a set of memory cells in an array of floating gate memory cells including bit lines coupled with corresponding columns of cells in the array,...
6011720 Nonvolatile memory with reduced write time/write verify time and semiconductor device thereof  
An involatile memory which carries out, in a flash memory itself, verify check of the flash memory for respective bit lines, and produces an overall verify check result from a completion decision...
5999451 Byte-wide write scheme for a page flash device  
In a floating gate memory that has a buffer that can be coupled to a set of floating gate memory cells in the memory, a method of writing to a selected portion of the set of floating gate cells....
5995417 Scheme for page erase and erase verify in a non-volatile memory array  
A non-volatile memory device includes a plurality of MOS transistors 34 and 36 connected to respective word lines 16 and 18 to allow individual pages of memory stored in the memory cells 8a, 10a...
5991199 Device and method for the programming of a memory  
In a device for programming EPROM-Flash type memory cells of memory words of a memory, a bit line of a memory cell of a given rank of the first word and at least one bit line of a memory cell of...
5986933 Semiconductor memory device having variable number of selected cell pages and subcell arrays  
A semiconductor memory device for easily optimizing a page size and a block size according to use in order to perform write, read and erase operations at the same time is provided. If a user...
5973967 Page buffer having negative voltage level shifter  
A page buffer facilitates programming of a memory cell within an associated memory array by selectively connecting a bit line associated with the memory cell to a negative voltage supply in...
5966326 Nonvolatile semiconductor memory equipped with single bit and multi-bit cells  
A nonvolatile semiconductor memory having a single bit cell array and a multi-bit cell array formed on a substrate of the memory is provided. The memory includes a plurality of memory blocks that...
5959886 Page-write indicator for non-volatile memory  
A circuit for activating page-write operations in a floating-gate memory includes a first and a second time lag circuit. A resetting signal resets a first time lag whenever a word is written in a...
5953253 Word addressable floating-gate memory comprising a reference voltage generator circuit for the verification of the contents of a word  
An electrically programmable non-volatile memory organized in n-bit words includes a generator circuit to produce a verification voltage to perform a verification of a word in the memory. The...
5949713 Nonvolatile memory device having sectors of selectable size and number  
A memory array is divided, at the design stage, into a plurality of elementary sectors; depending on the specific application and the requirements of the user, the elementary sectors are grouped...
5936890 Semiconductor flash memory having page buffer for verifying programmed memory cells  
A semiconductor memory includes a plurality of memory cells being electrically programmed and coupled to word lines and bit lines. A first latch circuit holds data during a programming operation...
5910913 Non-volatile semiconductor memory  
Each memory cell of a non-volatile semiconductor memory essentially consisting of a one-transistor type memory cell comprising only of an MOSFET having a floating gate electrode. When an electric...
5909392 PMOS memory array having OR gate architecture  
A nonvolatile PMOS memory array includes a plurality of pages, where each column of a page includes two series-connected PMOS OR strings in parallel with a bit line. Each PMOS OR string includes a...
5903497 Integrated program verify page buffer  
A semiconductor memory includes a plurality of memory cells and a corresponding plurality of page buffers. When writing to a selected row of cells, input data is first latched into the page...
5896317 Nonvolatile semiconductor memory device having data line dedicated to data loading  
It is assumed that, in each memory cell array, a first bit line corresponds to a selected address. In this case, a potential on only the first bit line attains H-level. Data to be loaded is...
5862075 Device for protection after a page-write operation in an electrically programmable memory  
A FLASH memory is compatible with a standard EEPROM memory in terms of a write-by-page instruction with write protection. A circuit successively addresses one of the columns of a storage matrix in...
5838615 Nonvolatile semiconductor memory device having reduced source line resistance  
According to this invention, a metal interconnection for the common source diffusion layer of memory cell transistors can be easily formed. An insulating interlayer which covers memory cell...
5835414 Page mode program, program verify, read and erase verify for floating gate memory device with low current page buffer  
A page mode flash memory or floating gate memory device, includes a page buffer based on low current bit latches. The low current bit latches enable efficient program, program verify, read and...
5822248 Non-volatile semiconductor memory device using folded bit line architecture  
A non-volatile memory device which enables use of a folded bit line system includes odd and even main bit lines, a plurality of sub-bit lines connected to the main bit lines through selection...