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7382651 |
Nonvolatile semiconductor memory device
In a control order of non-selected blocks at the time of data erase operation of one or a plurality of blocks, the control gate line is controlled to ground potential at first, then subsequently, a...
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7382650 |
Method and apparatus for sector erase operation in a flash memory array
A memory device is provided which includes a substrate, a common P-well isolated from the substrate, a plurality of sectors, and a common sector selection transistor configured to select one of the...
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7379345 |
Nonvolatile semiconductor memory device that achieves speedup in read operation
A plurality of first sub-bit lines are each connected to a common source line via a corresponding first sub-bit line reset transistor with NMOS structure, and a plurality of second sub-bit lines...
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7379332 |
Systems-on-chips including programmed memory cells and programmable and erasable memory cells
An integrated circuit memory device includes programmed memory cells and programmable and erasable memory cells. The memory device includes a first memory array block in which programmed memory...
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7379330 |
Retargetable memory cell redundancy methods
In a memory array having redundant columns, a scheme allows defective cells to be individually remapped to redundant cells in a redundant column. Redundant cells in one redundant column replace...
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7376019 |
Nonvolatile semiconductor memory
The nonvolatile semiconductor memory includes a plurality of memory devices for storing data, a write circuit for supplying a high voltage for data writing, a plurality of selectors connected...
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7372736 |
Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
A nonvolatile memory array has a single transistor flash memory cell and a two transistor EEPROM memory cell which maybe integrated on the same substrate. The nonvolatile memory cell has a floating...
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7372733 |
Non-volatile semiconductor memory device having different erase pass voltages for respective memory sectors and associated erase method
A non-volatile semiconductor memory device comprises a plurality of memory sectors arranged in different memory banks having different bulk regions. The memory cells can be erased using a first...
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7369440 |
Method, circuit and systems for erasing one or more non-volatile memory cells
The present invention is a method, circuit and system for erasing one or more non-volatile memory (“NVM”) cells in an NVM array or array segment. According to some embodiments of the present...
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7366029 |
High-performance flash memory data transfer
A flash memory system including a flash memory device and a controller, operable according to an advanced data transfer mode is disclosed. The flash memory device is operable both in a “legacy”...
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7366023 |
Flash memory device
A flash memory device includes first to n th banks sharing an I/O line, a page buffer unit commonly connected to a bit line of the first to n th banks, for buffering data to be transmitted to the...
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7366016 |
Nonvolatile semiconductor memory
Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the...
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7366015 |
Semiconductor integrated circuit device, production and operation method thereof
A semiconductor integrated device having a plurality of memory cells, each including a floating gate, a control gate and an auxiliary gate formed over a side surface of the floating gate through an...
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7359244 |
Non-volatile semiconductor memory device and semiconductor disk device
A non-volatile memory device is provided which includes a flash memory having a plurality of banks and a bank selection register which can take on states at least equal in number to the number of...
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7355889 |
Method for programming non-volatile memory with reduced program disturb using modified pass voltages
Non-volatile storage elements are programmed in a manner that reduces program disturb by using modified pass voltages. In particular, during the programming of a selected storage element associated...
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7355888 |
Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
Non-volatile storage elements are programmed in a manner that reduces program disturb by using modified pass voltages. In particular, during the programming of a selected storage element associated...
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7352622 |
Data arrangement and data arranging method in storage device
The disclosure relates to a data arranging method of a flash memory for improving access performance. The method includes steps of storing a first data sector to a page of the flash memory; storing...
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7352621 |
Method for enhanced block management
A method and apparatus is described herein for managing bad blocks/sectors in a nonvolatile memory. Upon detecting an input/output fault to a target block in a nonvolatile memory, the target block...
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7352620 |
Non-volatile semiconductor device and method for automatically recovering erase failure in the device
A spare sector is in a blank state beforehand. Each time the erasing is carried out in practical use, the number of erase pulses is counted or the presence/absence of overcurrent flowing when the...
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7349256 |
Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats
A flash memory device is programmed by loading first data into a page buffer of a first mat. Second data is loaded into a page buffer of a second mat while programming the first data in a first...
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7349255 |
High data rate write process for non-volatile flash memories
A non-volatile semiconductor memory includes: multiple write pipelines, each including a memory array; a timing circuit which sequentially starts programming operations in the pipelines; and a...
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7345919 |
Semiconductor device that enables simultaneous read and write/read operation
A semiconductor device includes a memory cell array including a plurality of cores, each of said cores including one block or a plurality of blocks. The semiconductor device further includes a...
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7345917 |
Non-volatile memory package and method of reading stored data from a non-volatile memory array
A non-volatile memory package includes a non-volatile memory array having a plurality of transistors that are electrically coupled in series, each of the transistors having an input terminal and an...
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7345914 |
Use of flash memory blocks outside of the main flash memory array
A method, device, and system are disclosed. In one embodiment, the device comprises an array of flash memory blocks to store information in a multiple bit per cell mode, one or more flash memory...
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7345908 |
Memory device
The present invention is to provide a memory device including: a plurality of memory cells that each include a memory element having a memory layer and first and second electrodes that sandwich the...
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7342826 |
Semiconductor device
The read speed of an on-chip nonvolatile memory enabling electric rewrite is increased. The nonvolatile memory has a hierarchal bit line structure having first bit lines specific to each of a...
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7339825 |
Nonvolatile semiconductor memory with write global bit lines and read global bit lines
A nonvolatile semiconductor memory is capable of dual and triple operation with a small chip size. A plurality of sectors is formed. Each sector has nonvolatile memory cells, local bit lines...
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7339823 |
Nonvolatile semiconductor storage apparatus and method of driving the same
A memory cell array is logically divided into a plurality of regions having different reading speeds, the respective regions having the different reading speeds include region information storage...
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7339822 |
Current-limited latch
A current-limited latch circuit is used within a nonvolatile memory integrated circuit for decoding, programming, erase, and other operations. In one implementation, there are a number of latches...
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7339820 |
Nonvolatile memory and semiconductor device
A nonvolatile memory capable of acting at each 1 bit and having a high integration density. A small-sized semiconductor device of multiple high functions having such nonvolatile memory. The...
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7336543 |
Non-volatile memory device with page buffer having dual registers and methods using the same
A non-volatile memory device with a page buffer having dual registers includes a memory cell array, a selector circuit and a page buffer circuit, the selector circuit being coupled to an exterior...
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7336532 |
Method for reading NAND memory device and memory cell array thereof
A method for reading a NAND flash memory device having plural normal cells, which utilizes plural reference bit lines associated with plural reference cells to read the normal cells in one phase to...
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7336098 |
High speed memory modules utilizing on-pin capacitors
Apparatus and method for producing memory modules having a plurality of branches connected to a memory bus, each branch containing at least one dynamic random access memory (DRAM) device or SDRAM...
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7333364 |
Cell-downgrading and reference-voltage adjustment for a multi-bit-cell flash memory
A flash memory has multi-level cells (MLC) that can each store multiple bits per cell. Blocks of cells can be downgraded to fewer bits/cell when errors occur, or for storing critical data such as...
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7328301 |
Dynamically mapping block-alterable memories
In one embodiment, the present invention includes a method for reassigning a first address of a block-alterable memory to a second address of the block-alterable memory, where the second address...
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7319617 |
Small sector floating gate flash memory
To control the problem of program and erase disturb in flash memory arrays having multiple sectors of cells grouped in each isolation wells of the flash memory array, a refresh procedure is used...
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7317631 |
Method for reading Uniform Channel Program (UCP) flash memory cells
A flash memory cell can be read by selecting a local bit line. A read potential is applied to a memory cell transistor associated with the local bit line thereby generating a capacitive loading of...
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7315473 |
Semiconductor storage device having page copying function
Data read from memory cells of one page in a memory cell array that corresponds to a page address of a copy source is sensed and latched by a sense/latch circuit. The sense/latch circuit has a...
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7315472 |
Non-volatile memory device
A non-volatile memory device may include a plurality of memory blocks including memory cells connected in series to bit lines, respectively. Each of the plurality of memory blocks may include a...
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7313030 |
Differential flash memory programming technique
The invention relates flash memory programming techniques. An object of the invention is to provide a flash memory programming technique avoiding problems of the known state of the art and in...
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7313022 |
Non-volatile semiconductor memory
A non-volatile semiconductor memory device includes a memory cell array having a plurality of non-volatile memory cells, a decode circuit configured to decode address data as input thereto to...
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7310268 |
Float gate memory device
A float gate memory device comprises a bottom word line, a float channel layer formed on the bottom word line and kept at a floating state, a float gate, and a top word line formed on the float...
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7310267 |
NAND flash memory device and method of manufacturing and operating the same
A NAND flash memory device, and more particularly, to NAND flash memory device and method of manufacturing operating the same as described. A dielectric film and a conduction layer are formed...
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7307894 |
Semiconductor device and control method of the same
The semiconductor device includes a memory cell array that includes memory cells for storing data and is managed on a sector basis, a memory that stores the information determining the activation...
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7307885 |
Multi-value nonvolatile semiconductor memory device equipped with reference cell and load balancing circuit
A nonvolatile semiconductor memory device includes a plurality of memory cells holding memory cell information, a plurality of bit lines connected to the plurality of memory cells, the plurality of...
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7307879 |
Nonvolatile memory device, and its manufacturing method
On a channel region enclosed by a pair of diffusion layers 13 A, 13 B, a first insulating layer 15 , a charge accumulative layer 17 , and a second insulating layer 19 are stacked up in this...
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7304890 |
Double byte select high voltage line for EEPROM memory block
A byte select circuit of a memory cell array wherein each column of the memory cell array has two byte select lines. A first byte select line is coupled to the even numbered rows in the column and...
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7298651 |
Architecture for virtual ground memory arrays
The drain programming window in virtual ground memory arrays may be enlarged by reducing the number of voltage drops in the cell access path. This reduction may be accomplished by reducing the...
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7298647 |
Operating techniques for reducing program and read disturbs of a non-volatile memory
The present invention presents a non-volatile memory having a plurality of erase units or blocks, where each block is divided into a plurality of parts sharing the same word lines to save on the...
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7295485 |
Memory architecture with advanced main-bitline partitioning circuitry for enhanced erase/program/verify operations
The present invention provides a solution for long master bit lines in a large capacity memory device. A master bit line is partitioned by at least one switching transistor placed on the master bit...
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