Matches 201 - 250 out of 255 < 1 2 3 4 5 6 >
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4654825 E.sup.2 prom memory cell  
A five volt only E 2 PROM cell including metal bit read and bit ground column lines and polysilicon word select and program row lines. An interconnected word select and stacked gate transistor...
4649520 Single layer polycrystalline floating gate  
A programmable read only memory includes a transistor having an N type source, an N type drain, and a polysilicon floating gate extending over the channel between the source and drain. The floating...
4642673 Floating gate type EEPROM with a substrate region used for the control gate  
A semiconductor memory device having a floating gate transistor and an insulated gate transistor, is provided a p-type semiconductor substrate, first, second and third semiconductor regions which...
4628487 Dual slope, feedback controlled, EEPROM programming  
A floating-gate, electrically-erasable, programmable read-only memory cell is programmed or erased by a high voltage across a thin oxide area between the floating gate and the substrate. A...
4618876 Electrically alterable, nonvolatile floating gate memory device  
A floating gate structure wherein the floating gate is a second level polysilicon layer that is substantially shielded from the substrate by a segmented, discontinuous first level word line....
4616340 Non-volatile semiconductor memory  
In the non-volatile semiconductor memory of present invention, a select gate and a floating gate are formed on the surface portion of the substrate between a source region and the drain region also...
4616245 Direct-write silicon nitride EEPROM cell  
An EEPROM cell which is programmed to a 1 or .0. binary state regardless of the prior state of the cell, that is, without erasing. The cell construction includes silicon nitride capacitors between...
4611309 Non-volatile dynamic RAM cell  
A non-volatile dynamic RAM circuit where each memory cell includes an access transistor, a floating gate structure, and a recall transistor connected in series between an I/O bit line and a common...
4609830 Programmable logic gate  
A programmable logic gate includes first and second complementary field effect transistors having gate terminals connected to receive a first input signal. A first variable resistance is connected...
4608585 Electrically erasable PROM cell  
In an EEPROM memory cell of the kind which relies on tunneling action through a thin oxide layer to store charge on a floating gate, the floating gate and the channel regions of the memory cell are...
4597064 Electrically programmable memory matrix  
An electrically programmable memory matrix comprises electrically programmable memory cells arranged in columns and rows, each consisting of a source-drain series arrangement of a memory transistor...
4597000 Floating-gate memory cell  
A memory cell includes a selection transistor and a memory transistor formed as insulated gate field effect transistors. The transistors are formed on a substrate with a channel for the selection...
4595999 Non-volatile random access memory cell with CMOS transistors having a common floating grid  
The invention relates to a non-volatile static memory cell. The cell comprises a bistable flip-flop with four transistors, with two complementary outputs. Between the outputs is placed a...
4590503 Electrically erasable programmable read only memory  
A floating gate electrically erasable programmable read only memory (E 2 PROM) having polycrystalline silicon gates with a control gate on the poly 1 level and a floating gate on the poly 2 level...
4580247 Semiconductor floating gate memory cell  
A semiconductor memory cell includes a source-drain series connection of several memory transistors each comprising electrically floating gates and being of the depletion type, with a selection...
4573144 Common floating gate programmable link  
A fusible link having a programmable floating gate transistor in a first active region uses an extension of the floating gate to a second active region to provide electrons to the floating gate by...
4558344 Electrically-programmable and electrically-erasable MOS memory device  
An MOS memory cell (44) including an electrically-programmable and electrically-erasable storage device (46) fabricated on a semiconductor substrate (50) is disclosed. The storage device (46) is...
4546454 Non-volatile memory cell fuse element  
A non-volatile memory cell circuit is used to replace a polysilicon fuse as an enabling element for a redundant row or column of memory cells in a semiconductor memory array. The fuse is divided...
4545034 Contactless tite RAM  
A transversly injected quasi-floating gate memory cell. A memory transistor in bulk silicon has a channel region in bulk silicon which is capacitatively coupled both to a thin polysilicon...
4545035 Dynamic RAM with nonvolatile shadow memory  
A compact memory cell combines a volatile dynamic storage section with a shadow nonvolatile section in two vertically stacked element arrays.
4538246 Nonvolatile memory cell  
A static random access memory array cell that is non-volatile because when power fails a floating gate is charged or not charged depending on the information content of the cell. When power is...
4532535 Electrically reprogrammable non volatile memory cell floating gate EEPROM with tunneling to substrate region  
An electrically erasable and reprogrammable non volatile memory cell is disclosed which is implemented in CMOS polycrystalline silicon gate transistor technology and comprises a p-channel MOS...
4527256 Electrically erasable memory matrix (EEPROM)  
EEPROM showing storage cells comprising a tunnel injector which at the one hand is connected to a first bit line by means of the source-drain-line of a floating gate FET and at the other hand to a...
4524429 Integrated memory matrix comprising nonvolatile reprogrammable storage cells  
The invention discloses an integrated memory matrix comprising nonvolatile reprogrammable storage (memory) cells arranged in rows and columns, as well as a classifying circuit integrated as well in...
4507758 Semiconductor memory element with two field effect transistors  
This invention relates to a semiconductor memory element with two field effect transistors and an arrangement in which these elements are utilized. In accordance with the invention, a field effect...
4493058 Integrated circuit for writing, reading and erasing memory matrices with insulated-gate field-effect transistors having non-volatile storage behaviour  
A memory access and control circuit is described for use with a non-volatile memory matrix utilizing insulated gate field effect transistors. Two one out of n selector circuits which are...
4486859 Electrically alterable read-only storage cell and method of operating same  
A non-volatile EAROS (Electrically Alterable Read Only Storage) memory array with fast reading and writing capability and a minimized cell size. Each cell of the array is composed of a floating...
4477825 Electrically programmable and erasable memory cell  
An electrically programmable and eraseable memory cell in which charge carriers are tunnelled between a floating gate and a drain region in the substrate through a thin oxide tunnel region, the...
4477883 Electrically erasable programmable read only memory  
In an electrically erasable and programmable read only memory of this invention, each memory cell has an L-shaped floating gate insulated from a substrate. The floating gate and a first control...
4467451 Nonvolatile random access memory cell  
In the NOVRAM cell of the present invention, a pair of cross-coupled variable threshold floating gate MOS (VTMOS) transistors facilitates nonvolatile and non-inverting writing and reading of data...
4429326 I.sup.2 L Memory with nonvolatile storage  
An I 2 L type nonvolatile memory of this invention has a structure wherein a floating gate is disposed through an insulating film on the surface of a semiconductor layer in the vicinity of a base...
4425631 Non-volatile programmable integrated semiconductor memory cell  
A non-volatile programmable integrated semi-conductor cell comprises a semiconductive substrate of one conductivity type, a reading insulated-gate field effect transistor partially incorporated in...
4417325 Highly scaleable dynamic ram cell with self-signal amplification  
A memory cell comprises a substrate of a first conductivity type (preferably N type) in which is formed a first region of opposite conductivity type. Second, third and fourth regions of first...
4408303 Directly-coupled and capacitively coupled nonvolatile static RAM cell  
A nonvolatile static random access memory cell (10) for storing data in a nonvolative state and recalling the data in its true state is disclosed. Cross-coupled transistors (12, 14) are provided...
4404577 Electrically alterable read only memory cell  
A reduction in cell area and an improvement in tolerance allowed for programming and erase voltages is achieved utilizing a diffused control gate having improved capacitive coupling to the floating...
4402064 Nonvolatile memory  
A nonvolatile memory, especially an electrically erasable and programmable read only memory (EE-PROM) includes an array of memory cells. In each of the memory cells four transistors are formed,...
4399522 Non-volatile static RAM cell with enhanced conduction insulators  
This invention provides improved non-volatile semiconductor memories which include a volatile latch circuit having a data node and first and second cross-coupled transistors, at least one of the...
4375087 Electrically erasable programmable read only memory  
A floating gate tunneling metal oxide semiconductor (FATMOS) transistor is formed in a well region on a semiconductive substrate of a conductivity type opposite to that of the well region, so that...
4363109 Capacitance coupled eeprom  
An electrically programmable and erasable IGFET nonvolatile memory unit, and method for writing/erasing information in it. The IGFET memory unit has two pairs of floating and control gates, with...
4288863 Programmable semiconductor memory cell  
A programmable non-volatile semiconductor memory cell consisting of an n-channel insulated gate field effect transistor comprising a gate electrode which is floating with respect to potential, and...
4274012 Substrate coupled floating gate memory cell  
Nonvolatile semiconductor electrically-alterable, floating-gate memory methods and devices which utilize substrate coupling for self-regulated, tunnel-current-shaping to provide improved device...
4267558 Electrically erasable memory with self-limiting erase  
A non-volatile semiconductor memory device of the electrically erasable type employs a floating gate which is programmed by application of high voltage across the source and drain so that hot...
4228527 Electrically reprogrammable non volatile memory  
An electrically reprogrammable non-volatile memory device is disclosed which includes complementary MOS transistors provided with a polycrystalline silicon floating gate electrode in a common n - ...
4209849 Non-volatile memory which can be erased word by word constructed in the floating gate technique  
A semiconductor memory is disclosed having a plurality of individual semiconductor storage cells. Each cell has at least one field effect transistor with a floating storage gate entirely surrounded...
4175290 Integrated semiconductor memory array having improved logic latch circuitry  
There is described a logic element employing fixed threshold and variable threshold transistors electrically connected together in a unique manner to form a latch. The latch can be made to retain...
4142251 Field programmable read-only-memory  
A P-channel and an N-channel MOS device share a common floating gate. Avalanche injection of electrons via the P-channel device or avalanche injection of holes via the N-channel device allows the...
4132904 Volatile/non-volatile logic latch circuit  
There is described a logic element employing fixed threshold and variable threshold transistors electrically connected together in a unique manner to form a latch. The latch can be made to retain...
4131906 Dynamic random access memory using MOS FETs and method for manufacturing same  
A dynamic Random Access Memory consisting of pairs of adjacent one transistor/one capacitor memory cells. The gate electrodes of the MOS FETs in each pair of adjacent memory cells are coupled and...
4128773 Volatile/non-volatile logic latch circuit  
There is described a logic element employing fixed threshold and variable threshold transistors electrically connected together to form a latch. The latch can be made to retain data by keeping...
4099196 Triple layer polysilicon cell  
A triple layer polysilicon cell for use in an electrically erasable PROM or for a discretionary circuit connector is described. Tunneling is employed to transfer charge to a floating gate from a...
Matches 201 - 250 out of 255 < 1 2 3 4 5 6 >