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8168469 |
Nonvolatile memory device made of resistance material and method of fabricating the same
A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part...
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8159877 |
Method of directly reading output voltage to determine data stored in a non-volatile memory cell
An NVM cell design enables direct reading of cell output voltage to determine data stored in the cell, while providing low current consumption and a simple program sequence that utilizes reverse...
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8149619 |
Memory structure having volatile and non-volatile memory portions
A memory array is provided that includes a transistor having two active gates sharing a source, a drain, and a channel of the transistor. One of the active gates may be coupled to a volatile memory...
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8111572 |
Disturb control circuits and methods to control memory disturbs among multiple layers of memory
Embodiments of the invention relate generally to data storage and computer memory, and more particularly, to systems, integrated circuits and methods for controlling memory disturbs to and among...
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8107290 |
Memory cell structure, a memory device employing such a memory cell structure, and an integrated circuit having such a memory device
A memory cell structure for a memory device includes a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack. The tunnelling capacitor is connected to...
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8094498 |
Nonvolatile semiconductor memory device
In a nonvolatile semiconductor memory device storing data by accumulating charges in a floating gate, memory units, each of which includes a first MOS transistor as a read device, a bit cell...
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8065478 |
Performing data operations using non-volatile third dimension memory
Performing data operations using non-volatile third dimension memory is described, including a storage system having a non-volatile third dimension memory array configured to store data, the data...
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7983081 |
Non-volatile memory apparatus and method with deep N-well
An apparatus and method of an electrically programmable and erasable non-volatile memory cell with a deep N-well to isolate the memory cell from the substrate is disclosed. In one embodiment, a...
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7983093 |
Non-volatile memory cell with BTBT programming
A Non-Volatile Memory (NVM) cell and programming method in which the cell can denote at least two logic levels (e.g., 0 and 1) and includes a read-transistor with a floating gate and a...
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7944745 |
Flash memory array of floating gate-based non-volatile memory cells
A flash memory array comprises a plurality of memory cells organized in a matrix of rows and columns. Each of the memory cells includes a floating gate memory transistor having a source region and...
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7923766 |
Semiconductor device including capacitorless RAM
There is provided a semiconductor device including a capacitorless RAM. The semiconductor device includes a field effect transistor (FET) having a floating body structure. FET includes a channel...
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7898856 |
Memory cell heights
Embodiments of the present disclosure provide methods, arrays, devices, modules, and systems for memory cell heights. One array of memory cells includes a number of semiconductor pillars having a...
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7889553 |
Single-poly non-volatile memory cell
A non-volatile memory cell includes: a substrate including diffusion regions for a read-out transistor; a capacitor formed in a poly-silicon layer adjacent the substrate, the capacitor including a...
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7872913 |
Nonvolatile analog memory
A nonvolatile analog memory has a floating gate point. The nonvolatile analog memory includes a capacitor, a first current source, a second current source and a current adjuster. The first current...
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7872914 |
Monitor structure for monitoring a change of a memory content
A monitor structure for monitoring a change of a memory content in a memory field of a non-volatile memory comprising a reference transistor in the memory field and a monitor transistor. The...
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7870333 |
Performing data operations using non-volatile third dimension memory
Performing data operations using non-volatile third dimension memory is described, including a storage system having a non-volatile third dimension memory array configured to store data, the data...
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7852672 |
Integrated circuit embedded with non-volatile programmable memory having variable coupling
A programmable non-volatile device uses a floating gate that functions as a FET gate that overlaps a variable portion of a source/drain region. This allows a programming voltage for the device to...
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7835184 |
EEPROM memory cell with first-dopant-type control gate transister, and second-dopant type program/erase and access transistors formed in common well
A memory device including a plurality of memory cells, each with a control gate NMOS transistor sharing a floating gate with a program/erase PMOS transistor which is, in turn, connected in series...
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7829404 |
Method of making a semiconductor memory array of floating gate memory cells with program/erase and select gates
A memory device, and method of making and operating the same, including a substrate of semiconductor material of a first conductivity type, first and second spaced apart regions in the substrate of...
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7820996 |
Nonvolatile memory device made of resistance material and method of fabricating the same
A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part...
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7813177 |
Analog single-poly EEPROM incorporating two tunneling regions for programming the memory device
A single-poly EEPROM memory device comprises a control gate isolated within a well of a first conductivity type in a semiconductor body of a second conductivity type, first and second tunneling...
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7807518 |
Semiconductor memory device and manufacturing method thereof
The present invention provides a semiconductor memory device having a capacitor electrode of a MOS capacitor formed in polygon and slanting faces enlarged toward an insulating film are provided...
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7796442 |
Nonvolatile semiconductor memory device and method of erasing and programming the same
A nonvolatile semiconductor memory device includes a semiconductor substrate having a source, a drain, and a channel region between the source and the drain. The channel region has a first end...
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7773428 |
Nonvolatile semiconductor memory having suitable crystal orientation
An NMOS transistor type nonvolatile semiconductor memory has first and second N-type diffusion layers formed in a P-type silicon layer as a source and a drain; a gate electrode formed on a channel...
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7755941 |
Nonvolatile semiconductor memory device
In a nonvolatile semiconductor memory device storing data by accumulating charges in a floating gate, memory units, each of which includes a first MOS transistor as a read device, a bit cell...
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7747817 |
Performing data operations using non-volatile third dimension memory
Performing data operations using non-volatile third dimension memory is described, including a storage system having a non-volatile third dimension memory array configured to store data, the data...
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7719061 |
Flash memory device and method of fabricating the same
A semiconductor device includes a semiconductor substrate having a cell region and a peripheral region. A cell array is defined within the cell region, the cell array having first, second, third,...
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7715242 |
Erasing method of non-volatile memory
An erasing method of a non-volatile memory is provided. The non-volatile memory includes a control gate disposed in a substrate, a floating gate, a gate oxide layer disposed between the floating...
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7710787 |
Method of erasing an EEPROM device
A method for erasing an EEPROM cell which reduces the need for monitoring algorithms. The potential at the erase gate is initially raised and the potential at the control gate is lowered to cause...
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7696558 |
Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the same
A semiconductor memory device comprises a substrate; a semiconductor layer of a first conductive type isolated from the substrate by an insulator layer; a memory transistor having a gate electrode,...
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7688627 |
Flash memory array of floating gate-based non-volatile memory cells
A flash memory array comprises a plurality of memory cells organized in a matrix of rows and columns. Each of the memory cells includes a floating gate memory transistor having a source region and...
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7663927 |
Reading voltage generator for a non-volatile EEPROM memory cell matrix of a semiconductor device and corresponding manufacturing process
A reference voltage generator for a matrix of non-volatile memory cells of the EEPROM type, comprises at least one array enabled by an access transistor. The array comprises at least one reference...
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7652921 |
Multi-level non-volatile memory cell with high-VT enhanced BTBT device
The present disclosure provides a Non-Volatile Memory (NVM) cell and programming method thereof. The cell can denote at least two logic levels. The cell has a read-transistor with a floating gate,...
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7639536 |
Storage unit of single-conductor non-volatile memory cell and method of erasing the same
A storage unit of a single-conductor non-volatile memory cell is described, which includes an isolation layer in a substrate, a storage transistor and an erasing transistor. The storage transistor...
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7623380 |
Nonvolatile semiconductor memory device
A nonvolatile semiconductor memory device for storing data by accumulating charge in a floating gate includes a plurality of MOS transistors sharing the floating gate. In the device, a PMOS is used...
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7580279 |
Flash memory cells with reduced distances between cell elements
An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope...
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7573746 |
Volatile data storage in a non-volatile memory cell array
A method for storing data on nodes in memory cells of a non-volatile memory cell array including steps of setting non-volatile devices of the non-volatile memory cell array to a desired state,...
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7554833 |
Semiconductor memory and method of writing data into the semiconductor memory
A non-volatile semiconductor memory including a silicon substrate having first and second diffusion layers at its surface and a control gate located above a channel region defined by the first and...
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7542342 |
Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general-purpose CMOS technology with thick gate oxide
A multiple time programmable (MTP) memory cell, in accordance with an embodiment, includes a floating gate PMOS transistor, a high voltage NMOS transistor, and an n-well capacitor. The floating...
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7512012 |
Non-volatile memory and manufacturing method and operating method thereof and circuit system including the non-volatile memory
The memory cell includes a first unit, a semiconductor layer, a second unit, and a doped region. The first unit includes a first gate, a first charge trapping layer, and a second charge trapping...
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7483299 |
Devices and operation methods for reducing second bit effect in memory device
A method for operating a semiconductor memory device having first and second bit lines, a gate electrode, an insulative layer, and a substrate includes applying first, second, and third biases to...
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7480187 |
Nonvolatile semiconductor memory with low-loading bit line architecture and method of programming the same
A NAND flash memory device includes an array of NAND flash memory cells; a plurality of word lines connected to the NAND flash memory cells; and a plurality of bit lines connected to the NAND flash...
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7463523 |
Semiconductor memory device and method of driving a semiconductor memory device
A semiconductor memory device includes a semiconductor layer; a source layer provided in the semiconductor layer; a drain layer provided in the semiconductor layer; a body region provided in the...
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7436710 |
EEPROM memory device with cell having NMOS in a P pocket as a control gate, PMOS program/erase transistor, and PMOS access transistor in a common well
A memory device including a plurality of memory cells, each with a control gate NMOS transistor sharing a floating gate with a program/erase PMOS transistor which is, in turn, connected in series...
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7388784 |
Nonvolatile semiconductor memory device including memory cell units each having a given number of memory cell transistors
A nonvolatile semiconductor memory device includes a plurality of memory cell units and a memory cell array in which the memory cell units are arranged in matrix. Each of the memory cell units has...
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7366015 |
Semiconductor integrated circuit device, production and operation method thereof
A semiconductor integrated device having a plurality of memory cells, each including a floating gate, a control gate and an auxiliary gate formed over a side surface of the floating gate through an...
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7348621 |
Non-volatile memory cells
A non-volatile memory cell and method of fabrication are provided. The non-volatile memory cell includes a substrate of a first conductivity type, a first dopant region of a second conductivity...
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7301811 |
Cost efficient nonvolatile SRAM cell
A cost efficient nonvolatile memory cell may include an inverter, an access gate coupled to the inverter for controlling access to the memory cell, and a control gate. The inverter may include a...
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7269063 |
Floating gate memory with split-gate read transistor and split gate program transistor memory cells and method for making the same
Variations in memory array and cell configuration are shown, which eliminate punch-through disturb, reverse-tunnel. Several configurations are shown which range from combined and separate source...
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7262993 |
Nonvolatile semiconductor memory device
A nonvolatile semiconductor memory device including: a first capacitor, one end of the first capacitor being connected to a floating node; a detection transistor, a gate electrode of the detection...
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