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8168469 Nonvolatile memory device made of resistance material and method of fabricating the same  
A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part...
8159877 Method of directly reading output voltage to determine data stored in a non-volatile memory cell  
An NVM cell design enables direct reading of cell output voltage to determine data stored in the cell, while providing low current consumption and a simple program sequence that utilizes reverse...
8149619 Memory structure having volatile and non-volatile memory portions  
A memory array is provided that includes a transistor having two active gates sharing a source, a drain, and a channel of the transistor. One of the active gates may be coupled to a volatile memory...
8111572 Disturb control circuits and methods to control memory disturbs among multiple layers of memory  
Embodiments of the invention relate generally to data storage and computer memory, and more particularly, to systems, integrated circuits and methods for controlling memory disturbs to and among...
8107290 Memory cell structure, a memory device employing such a memory cell structure, and an integrated circuit having such a memory device  
A memory cell structure for a memory device includes a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack. The tunnelling capacitor is connected to...
8094498 Nonvolatile semiconductor memory device  
In a nonvolatile semiconductor memory device storing data by accumulating charges in a floating gate, memory units, each of which includes a first MOS transistor as a read device, a bit cell...
8065478 Performing data operations using non-volatile third dimension memory  
Performing data operations using non-volatile third dimension memory is described, including a storage system having a non-volatile third dimension memory array configured to store data, the data...
7983081 Non-volatile memory apparatus and method with deep N-well  
An apparatus and method of an electrically programmable and erasable non-volatile memory cell with a deep N-well to isolate the memory cell from the substrate is disclosed. In one embodiment, a...
7983093 Non-volatile memory cell with BTBT programming  
A Non-Volatile Memory (NVM) cell and programming method in which the cell can denote at least two logic levels (e.g., 0 and 1) and includes a read-transistor with a floating gate and a...
7944745 Flash memory array of floating gate-based non-volatile memory cells  
A flash memory array comprises a plurality of memory cells organized in a matrix of rows and columns. Each of the memory cells includes a floating gate memory transistor having a source region and...
7923766 Semiconductor device including capacitorless RAM  
There is provided a semiconductor device including a capacitorless RAM. The semiconductor device includes a field effect transistor (FET) having a floating body structure. FET includes a channel...
7898856 Memory cell heights  
Embodiments of the present disclosure provide methods, arrays, devices, modules, and systems for memory cell heights. One array of memory cells includes a number of semiconductor pillars having a...
7889553 Single-poly non-volatile memory cell  
A non-volatile memory cell includes: a substrate including diffusion regions for a read-out transistor; a capacitor formed in a poly-silicon layer adjacent the substrate, the capacitor including a...
7872913 Nonvolatile analog memory  
A nonvolatile analog memory has a floating gate point. The nonvolatile analog memory includes a capacitor, a first current source, a second current source and a current adjuster. The first current...
7872914 Monitor structure for monitoring a change of a memory content  
A monitor structure for monitoring a change of a memory content in a memory field of a non-volatile memory comprising a reference transistor in the memory field and a monitor transistor. The...
7870333 Performing data operations using non-volatile third dimension memory  
Performing data operations using non-volatile third dimension memory is described, including a storage system having a non-volatile third dimension memory array configured to store data, the data...
7852672 Integrated circuit embedded with non-volatile programmable memory having variable coupling  
A programmable non-volatile device uses a floating gate that functions as a FET gate that overlaps a variable portion of a source/drain region. This allows a programming voltage for the device to...
7835184 EEPROM memory cell with first-dopant-type control gate transister, and second-dopant type program/erase and access transistors formed in common well  
A memory device including a plurality of memory cells, each with a control gate NMOS transistor sharing a floating gate with a program/erase PMOS transistor which is, in turn, connected in series...
7829404 Method of making a semiconductor memory array of floating gate memory cells with program/erase and select gates  
A memory device, and method of making and operating the same, including a substrate of semiconductor material of a first conductivity type, first and second spaced apart regions in the substrate of...
7820996 Nonvolatile memory device made of resistance material and method of fabricating the same  
A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part...
7813177 Analog single-poly EEPROM incorporating two tunneling regions for programming the memory device  
A single-poly EEPROM memory device comprises a control gate isolated within a well of a first conductivity type in a semiconductor body of a second conductivity type, first and second tunneling...
7807518 Semiconductor memory device and manufacturing method thereof  
The present invention provides a semiconductor memory device having a capacitor electrode of a MOS capacitor formed in polygon and slanting faces enlarged toward an insulating film are provided...
7796442 Nonvolatile semiconductor memory device and method of erasing and programming the same  
A nonvolatile semiconductor memory device includes a semiconductor substrate having a source, a drain, and a channel region between the source and the drain. The channel region has a first end...
7773428 Nonvolatile semiconductor memory having suitable crystal orientation  
An NMOS transistor type nonvolatile semiconductor memory has first and second N-type diffusion layers formed in a P-type silicon layer as a source and a drain; a gate electrode formed on a channel...
7755941 Nonvolatile semiconductor memory device  
In a nonvolatile semiconductor memory device storing data by accumulating charges in a floating gate, memory units, each of which includes a first MOS transistor as a read device, a bit cell...
7747817 Performing data operations using non-volatile third dimension memory  
Performing data operations using non-volatile third dimension memory is described, including a storage system having a non-volatile third dimension memory array configured to store data, the data...
7719061 Flash memory device and method of fabricating the same  
A semiconductor device includes a semiconductor substrate having a cell region and a peripheral region. A cell array is defined within the cell region, the cell array having first, second, third,...
7715242 Erasing method of non-volatile memory  
An erasing method of a non-volatile memory is provided. The non-volatile memory includes a control gate disposed in a substrate, a floating gate, a gate oxide layer disposed between the floating...
7710787 Method of erasing an EEPROM device  
A method for erasing an EEPROM cell which reduces the need for monitoring algorithms. The potential at the erase gate is initially raised and the potential at the control gate is lowered to cause...
7696558 Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the same  
A semiconductor memory device comprises a substrate; a semiconductor layer of a first conductive type isolated from the substrate by an insulator layer; a memory transistor having a gate electrode,...
7688627 Flash memory array of floating gate-based non-volatile memory cells  
A flash memory array comprises a plurality of memory cells organized in a matrix of rows and columns. Each of the memory cells includes a floating gate memory transistor having a source region and...
7663927 Reading voltage generator for a non-volatile EEPROM memory cell matrix of a semiconductor device and corresponding manufacturing process  
A reference voltage generator for a matrix of non-volatile memory cells of the EEPROM type, comprises at least one array enabled by an access transistor. The array comprises at least one reference...
7652921 Multi-level non-volatile memory cell with high-VT enhanced BTBT device  
The present disclosure provides a Non-Volatile Memory (NVM) cell and programming method thereof. The cell can denote at least two logic levels. The cell has a read-transistor with a floating gate,...
7639536 Storage unit of single-conductor non-volatile memory cell and method of erasing the same  
A storage unit of a single-conductor non-volatile memory cell is described, which includes an isolation layer in a substrate, a storage transistor and an erasing transistor. The storage transistor...
7623380 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device for storing data by accumulating charge in a floating gate includes a plurality of MOS transistors sharing the floating gate. In the device, a PMOS is used...
7580279 Flash memory cells with reduced distances between cell elements  
An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope...
7573746 Volatile data storage in a non-volatile memory cell array  
A method for storing data on nodes in memory cells of a non-volatile memory cell array including steps of setting non-volatile devices of the non-volatile memory cell array to a desired state,...
7554833 Semiconductor memory and method of writing data into the semiconductor memory  
A non-volatile semiconductor memory including a silicon substrate having first and second diffusion layers at its surface and a control gate located above a channel region defined by the first and...
7542342 Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general-purpose CMOS technology with thick gate oxide  
A multiple time programmable (MTP) memory cell, in accordance with an embodiment, includes a floating gate PMOS transistor, a high voltage NMOS transistor, and an n-well capacitor. The floating...
7512012 Non-volatile memory and manufacturing method and operating method thereof and circuit system including the non-volatile memory  
The memory cell includes a first unit, a semiconductor layer, a second unit, and a doped region. The first unit includes a first gate, a first charge trapping layer, and a second charge trapping...
7483299 Devices and operation methods for reducing second bit effect in memory device  
A method for operating a semiconductor memory device having first and second bit lines, a gate electrode, an insulative layer, and a substrate includes applying first, second, and third biases to...
7480187 Nonvolatile semiconductor memory with low-loading bit line architecture and method of programming the same  
A NAND flash memory device includes an array of NAND flash memory cells; a plurality of word lines connected to the NAND flash memory cells; and a plurality of bit lines connected to the NAND flash...
7463523 Semiconductor memory device and method of driving a semiconductor memory device  
A semiconductor memory device includes a semiconductor layer; a source layer provided in the semiconductor layer; a drain layer provided in the semiconductor layer; a body region provided in the...
7436710 EEPROM memory device with cell having NMOS in a P pocket as a control gate, PMOS program/erase transistor, and PMOS access transistor in a common well  
A memory device including a plurality of memory cells, each with a control gate NMOS transistor sharing a floating gate with a program/erase PMOS transistor which is, in turn, connected in series...
7388784 Nonvolatile semiconductor memory device including memory cell units each having a given number of memory cell transistors  
A nonvolatile semiconductor memory device includes a plurality of memory cell units and a memory cell array in which the memory cell units are arranged in matrix. Each of the memory cell units has...
7366015 Semiconductor integrated circuit device, production and operation method thereof  
A semiconductor integrated device having a plurality of memory cells, each including a floating gate, a control gate and an auxiliary gate formed over a side surface of the floating gate through an...
7348621 Non-volatile memory cells  
A non-volatile memory cell and method of fabrication are provided. The non-volatile memory cell includes a substrate of a first conductivity type, a first dopant region of a second conductivity...
7301811 Cost efficient nonvolatile SRAM cell  
A cost efficient nonvolatile memory cell may include an inverter, an access gate coupled to the inverter for controlling access to the memory cell, and a control gate. The inverter may include a...
7269063 Floating gate memory with split-gate read transistor and split gate program transistor memory cells and method for making the same  
Variations in memory array and cell configuration are shown, which eliminate punch-through disturb, reverse-tunnel. Several configurations are shown which range from combined and separate source...
7262993 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device including: a first capacitor, one end of the first capacitor being connected to a floating node; a detection transistor, a gate electrode of the detection...
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