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8185802 |
Data memory system
A data memory system includes a nonvolatile memory cell array which includes a plurality of memory cells, a page adjacently formed by the plurality of memory cells being collectively erased in the...
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8179718 |
Memory device and memory programming method
Provided are memory devices and memory programming methods. A memory device may include: a multi-level cell array that includes a plurality of multi-level cells; a programming unit that programs a...
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8179719 |
Systems and methods for improving error distributions in multi-level cell memory systems
A memory system includes a state set module that provides a first state set having a plurality of states, each being assigned to represent a particular data sequence, and a second state set having...
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8179717 |
Maintaining integrity of preloaded content in non-volatile memory during surface mounting
A non-volatile memory chip package is prepared for surface mounting to a substrate in a solder reflow process by programming erased blocks to higher threshold voltage levels, to improve data...
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8174285 |
Component provided with an integrated circuit comprising a cryptorocessor and method of installation thereof
In order to protect an integrated circuit provided with a cryptoprocessor from attacks aiming to reveal secrets, it is anticipated to use a component sensitive to the activation of a parasitic...
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8174887 |
Adjusting for charge loss in a memory
Memory and methods of operating a memory adjusting an output voltage of an analog storage device, such as a data cache capacitor holding a voltage level representative of data, in response to an...
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8174913 |
Semiconductor memory device and driving method of the same
A memory includes a cell region; a spare region including a spare block; a fuse region storing remedy information necessary for an access to the spare block instead of a remedy target block, the...
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8169825 |
Reliable data storage in analog memory cells subjected to long retention periods
A method for data storage in a non-volatile memory includes storing data in the non-volatile memory using a first storage configuration while the non-volatile memory is supplied with electrical...
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8164953 |
Memory and boundary searching method thereof
A memory and an operating method thereof are provided therein. When searching a boundary of a threshold voltage distribution of the memory, data errors resulted from tail bits of the memory would...
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8159890 |
Redundant memory array for replacing memory sections of main memory
Memories and methods for replacing memory sections of a main memory array by mapping memory addresses for an entire main memory section to at least one memory section of a redundant memory array....
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8159882 |
Nonvolatile semiconductor memory device and memory system
A semiconductor memory device executes a writing operation based on a first bit assignment pattern at the time of writing. The first bit assignment pattern is created such that pieces of x-bit data...
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8154925 |
Semiconductor memory device and system capable of executing an interleave programming for a plurality of memory chips and a 2-plane programming at the respective memory chips
A semiconductor memory device includes first and second memory chips and a control logic configured to execute an interleave program between the first and second memory chips. The control logic...
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8154929 |
Flash memory device controlling common source line voltage, program-verify method, and memory system
Disclosed is a flash memory device and a program-verify method. The flash memory device includes; a plurality of memory cells connected between a bit line and a common source line, and a data...
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8156392 |
Apparatus, system, and method for bad block remapping
An apparatus, system, and method are disclosed for bad block remapping. A bad block identifier module identifies one or more data blocks on a solid-state storage element as bad blocks. A log update...
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8156393 |
Memory system
To provide a memory system which determines a memory state such as an exhaustion level and allows a memory to be efficiently used. The memory system includes a NAND type flash memory 1 in which...
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8151173 |
Semiconductor storage device comprising memory array including normal array and parity array
Data latches, multiplexers, an ECC circuit section, and an input/output circuit section are arranged in columns and adjacent to each other, in an extending direction of data lines that are formed...
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8149621 |
Flash memory device and method of testing the flash memory device
A flash memory device and a method of testing the flash memory device are provided. The flash memory device may include a memory cell array including a plurality of bit lines, a control unit...
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8140938 |
Semiconductor memory device and error correction method thereof
A semiconductor memory device having an error correcting function, includes a memory array having a data area and a check code area, an operation circuit including an encode circuit coupled to the...
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8139428 |
Method for reading and writing a block interleaver and the reading circuit thereof
A method for writing a memory of a block interleaver determines in a bit-wise manner whether to write data into the memory. A method for reading a memory of a block interleaver combines two...
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8139412 |
Systematic error correction for multi-level flash memory
In accordance with exemplary embodiments, a multi-level flash memory employs error correction of systematic errors when reading multi-level flash memory. Error correction includes i) detection of...
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8134873 |
Flash memory device and programming/erasing method of the same
A flash memory device includes a bulk region, first through nth memory cell transistors arranged in a row on the bulk region, first through nth word lines respectively connected to gates of the...
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8136014 |
Non-volatile semiconductor memory device
A non-volatile semiconductor memory device comprises a memory cell array including a plurality of memory cells arrayed capable of storing information of N bits (N≧2) in accordance with variations i...
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8130553 |
Systems and methods for low wear operation of solid state memory
This disclosure is related to systems and methods for low wear operation of solid state memory, such as a flash memory. In one example, a controller is coupled to a memory and adapted to...
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8130549 |
Apparatus and method for detecting over-programming condition in multistate memory device
A system embodiment comprises a nonvolatile memory device, a memory, and a controller. The nonvolatile memory device includes a plurality of nonvolatile memory cells. Each nonvolatile memory cell...
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8130544 |
Method of reducing bit error rate for a flash memory
A method of reducing coupling effect in a flash memory is disclosed. A neighboring page is read, and a flag is set active if the neighboring page is an interfering page. Data are read from the...
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8127202 |
Use of alternative value in cell detection
A system and method, including computer software, allows reading data from a flash memory cell. Voltages from a group of memory cells are detected. The group of memory cells have associated...
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8125827 |
Flash memory systems and operating methods using adaptive read voltage levels
Some embodiments of the present invention provide methods of operating nonvolatile memory devices. Reference data is stored in a plurality of memory cells. The reference data is read, and a...
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8120969 |
Semi-volatile NAND flash memory
Semi-volatile NAND flash memory systems, apparatuses, and methods for use are described herein. According to various embodiments, a semi-volatile NAND flash memory may be partitioned into various...
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8122320 |
Integrated circuit including an ECC error counter
An integrated circuit includes a memory array and an error correction code (ECC) circuit configured to provide a first signal indicating whether data read from the memory array has been corrected...
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8120957 |
Nonvolatile semiconductor storage device, nonvolatile semiconductor storage system and method of managing of defective column in nonvolatile semiconductor storage system
A nonvolatile semiconductor storage device is disclosed, which includes a memory cell array in which nonvolatile memory cells are arranged, a first data holding circuit which temporarily holds a...
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8116134 |
Semiconductor memory device with improved ECC efficiency
Memory cells store k bits of data (k is a natural number not less than 2) into a single cell. A number n of data storage circuits store externally supplied k bits of data to write data into the...
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8116133 |
Maintenance operations for multi-level data storage cells
Systems and methods, including computer software, for reading data from a flash memory cell involve detecting voltages from a group of memory cells. The group of memory cells have associated...
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8116457 |
Methods, apparatuses, and products for a secure circuit
Methods, systems, apparatuses and products are disclosed for providing security circuits. Exemplary embodiments including semiconductor chips on circuit boards are shown, together with application...
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8117519 |
Memory apparatus and method using erasure error correction to reduce power consumption
An error correction circuit coupled to a plurality of memory cells in a memory device includes an error correcting code (“ECC”) generator and an ECC controller. The ECC generator is coupled to the...
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8112692 |
Flash memory device error correction code controllers and related methods and memory systems
An ECC controller for a flash memory device storing M-bit data (M: a positive integer equal to or greater than 2) includes an encoder and a decoder. The encoder generates first ECC data for input...
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8111547 |
Multi-bit flash memory and reading method thereof
A multi-bit flash memory and a reading method thereof. Multiple reference memory cells for saving reserved data are provided to operate together with multiple data memory cells. Before the data...
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8107301 |
Memory controller
A memory controller for writing data in a first semiconductor memory including a plurality of memory cells having series-connected current paths and charge storage layers includes a host interface...
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8102717 |
Method of testing for a leakage current between bit lines of nonvolatile memory device
A method of testing for a leakage current between bit lines of a nonvolatile memory device includes providing the nonvolatile memory device with a page buffer having first and second bit lines...
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8103940 |
Programming error correction code into a solid state memory device with varying bits per cell
Memory devices that, in a particular embodiment, receive and transmit analog data signals representative of bit patterns of two or more bits such as to facilitate increases in data transfer rates...
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8094502 |
Write-precompensation and variable write backoff
A technique for writing data is disclosed. The technique includes estimating an amount of additional voltage on a victim cell of a solid-state storage device caused by writing to one or more other...
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8089812 |
Semiconductor memory device
A semiconductor memory device can reduce a circuit area necessary for row repair. The semiconductor memory device includes a plurality of memory banks, a plurality of cell arrays arranged in each...
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8085592 |
Charge-trap flash memory device with reduced erasure stress and related programming and erasing methods thereof
Operation methods of charge-trap flash memory devices having an unused memory cell for data storage and a normal memory cell used for data storage are discussed. The operation method may include...
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8085591 |
Charge loss compensation during programming of a memory device
In programming a selected word line of memory cells, a first program verify or read operation is performed, after one page of a selected word line is programmed, in order to determine a first...
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8085590 |
Multi-bit-per-cell flash memory device with non-bijective mapping
To store a plurality of input bits, the bits are mapped to a corresponding programmed state of one or more memory cells and the cell(s) is/are programmed to that corresponding programmed state. The...
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8085595 |
Nonvolatile memory devices and methods of controlling the wordline voltage of the same
A nonvolatile memory device includes an array of memory cells arranged in rows and columns, the array of memory cells having wordlines associated therewith. A wordline voltage controller determines...
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8086914 |
Storing data to multi-chip low-latency random read memory device using non-aligned striping
Described herein are method and apparatus for storing data to a low-latency random read memory (LLRRM) device using non-aligned data striping, the LLRRM device being implemented on a storage...
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8081511 |
Flash memory device with redundant columns
Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of columns. Each of the columns includes a bit...
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8077642 |
Methods and apparatus for signal echo cancellation and transmitter calibration in full duplex systems
A method includes transmitting a first signal over a network from a first communication link to a second communication link. The method further includes receiving a second signal with the first...
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8077515 |
Methods, devices, and systems for dealing with threshold voltage change in memory devices
The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control...
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8077516 |
Method and apparatus for accessing memory with read error by changing comparison
In response to a disagreement between a previously generated check code associated with previously programmed data bits and a more recently generated check code generated in response to a read...
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