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9042186 Solid state drive and data erasing method thereof  
A data erasing method of a solid state drive is provided. The solid state drive includes a memory module. The memory module includes a block. A data to be erased is stored in the block. The data...
9042170 Off-die charge pump that supplies multiple flash devices  
A system and method for storing data uses multiple flash memory dies. Each flash memory die includes multiple flash memory cells. A charge pump is adapted to supply charge at a predetermined...
9042175 Non-volatile memory device and read method thereof  
Disclosed is a nonvolatile memory device which includes a memory cell connected to a bit line and a word line; a page buffer electrically connected to the bit line and sensing data stored in the...
9042169 Shifting cell voltage based on grouping of solid-state, non-volatile memory cells  
Cells of a solid-state, non-volatile memory are assigned to one of a plurality of groups. Each group is defined by expected symbols stored in the cells in view of actual symbols read from the...
9042168 System and method for improving error distribution in multi-level memory cells  
A system including a state set module to arrange states of a memory cell in three sets. The memory cell stores three bits when programmed to a state. Each set includes three rows of bits. In a...
9036412 Memory device and method of determining read voltage of memory device  
A method of operating a memory device includes applying an initial read voltage to a selected wordline to perform a read operation on memory cells connected to the selected wordline, determining...
9036417 On chip dynamic read level scan and error detection for nonvolatile storage  
Techniques for efficiently programming non-volatile storage are disclosed. A second page of data may efficiently be programmed into memory cells that already store a first page. Data may be...
9036413 Flash memory reference voltage detection with tracking of cross-points of cell voltage distributions using histograms  
Cross-points of flash memory cell voltage distributions are determined by reading data from a portion of the flash memory two or more times using two or more different candidate reference voltages...
9030870 Threshold voltage compensation in a multilevel memory  
Threshold voltages in a charge storage memory are controlled by threshold voltage placement, such as to provide more reliable operation and to reduce the influence of factors such as neighboring...
9030876 Memory system, program method thereof, and computing system including the same  
Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is...
9030879 Method and system for programming non-volatile memory with junctionless cells  
A non-volatile memory system that has junctionless transistors is provided that uses suppression of the formation of an inversion-layer source and drain in the junctionless transistors to cause a...
9030871 Integrated circuit with programmable storage cell array and boot-up operation method thereof  
An integrated circuit may include a first programmable storage cell group suitable for storing program validity information, second to N-th programmable storage cell groups suitable for storing a...
9025376 Nonvolatile memory device and related method of operation  
A memory device comprises a nonvolatile memory device and a controller. The nonvolatile memory comprises a first memory area comprising single-bit memory cells and a second memory area comprising...
RE45497 Programming memory with reduced pass voltage disturb and floating gate-to-control gate leakage  
Program disturb is reduced in a non-volatile storage system by programming storage elements on a selected word line WLn in separate groups, according to the state of their WLn−1 neighbor storage...
9021343 Parity scheme for a data storage device  
A data storage device includes a non-volatile memory having a three-dimensional (3D) memory configuration. The data storage device may further include selection circuitry configured to select data...
9019780 Non-volatile memory apparatus and data verification method thereof  
A non-volatile memory apparatus and a data verification method thereof are provided. The non-volatile memory apparatus includes a plurality of memory cells, a page buffer, a write circuit, a sense...
9019771 Dielectric charge trapping memory cells with redundancy  
A memory cell array of dielectric charge trapping memory cells and method for performing program, read and erase operations on the memory cell array that includes bits stored at charge trapping...
9019762 Methods of operating memory devices  
Methods of operating a memory device include determining whether each memory cell selected for a sense operation has any data state of a first subset of data states of a plurality of data states,...
9013919 Data randomization in 3-D memory  
In a nonvolatile memory array, such as a three-dimensional array of charge-storage memory cells, data is randomized so that data of different strings along the same bit line are randomized using...
9013926 Non-volatile semiconductor storage device capable of increasing operating speed  
According to one embodiment, a non-volatile semiconductor storage device includes a memory cell array, a row decoder, a potential generating circuit, first plural potential selection circuits, a...
9007841 Programming scheme for improved voltage distribution in solid-state memory  
Systems and methods are disclosed for reducing programming interference in solid-state memory using a program suspend command. A data storage system includes a non-volatile memory array including...
9007797 Selective activation of programming schemes in analog memory cell arrays  
A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors...
9007827 Nonvolatile memory device and method of programming nonvolatile memory device  
A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory...
9007839 Nonvolatile memory device performing read operation with variable read voltage  
A method of reading a nonvolatile memory device comprises applying a read voltage to a memory cell array to read selected memory cells, counting a number of the selected memory cells that have a...
9007826 Non-volatile semiconductor memory device  
In one embodiment, a control circuit executes a first page writing operation, a first verify operations, a second page writing operation, a second verify operations, a step-up operation. The...
9007842 Retention detection and/or channel tracking policy in a flash memory based storage system  
A method for determining a retention time in a solid state device (SSD), comprising the steps of providing a plurality of write operations to a memory, determining a reference voltage for each of...
9007828 Methods and apparatus for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding  
Methods and apparatus are provided for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding. A single sector can be stored across a...
9001579 Semiconductor memory device for and method of applying temperature-compensated word line voltage during read operation  
A semiconductor memory device configured to apply a temperature-compensated word line voltage to a word line during a data read operation includes a memory cell array including a plurality of word...
9001572 System on chip including dual power rail and voltage supply method thereof  
A system on chip includes an SRAM. The SRAM includes at least one memory cell and a peripheral circuit accessing the at least memory cell. A first power circuit is configured to supply a first...
9001545 NOR-based BCAM/TCAM cell and array with NAND scalability  
This invention discloses a 2T-string NOR-based CAM logic cell comprising two physical NAND cells connected in series with two horizontal WLs and one vertical BL and one vertical SL. Additionally,...
9001577 Memory cell sensing  
This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory...
9001578 Soft erasure of memory cells  
Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In accordance with some embodiments, a soft erasure is performed on a block of memory cells by...
9003263 Encoder and decoder generation by state-splitting of directed graph  
A method of generating a hardware encoder includes generating a first directed graph characterizing a constraint set for a constrained system, identifying a scaling factor for an approximate...
8995183 Data retention in nonvolatile memory with multiple data storage formats  
In a nonvolatile memory that stores data in two or more different data storage formats, such as binary and MLC, a separation scheme is used to distribute blocks containing data in one data storage...
8995184 Adaptive operation of multi level cell memory  
A Multi Level Cell (MLC) nonvolatile memory is tested and, if it fails to meet an MLC specification, is reconfigured for operation as an SLC memory by assigning two of the MLC memory cell states...
8995182 Coarse and fine programming in a solid state memory  
Memory devices adapted to receive and transmit analog data signals representative of bit patterns of two or more bits facilitate increases in data transfer rates relative to devices communicating...
8988942 Methods for extending the effective voltage window of a memory cell  
Methods for operating a non-volatile storage system in which cross-coupling effects are utilized to extend the effective threshold voltage window of a memory cell and to embed additional...
8988928 Operating method of a nonvolatile memory device  
An operating method of a multi-bit-per-cell nonvolatile memory device, e.g., first and second variable resistance memory cells connected to one of word lines. The operating method may include...
8988940 Structure and method for narrowing voltage threshold distribution in non-volatile memories  
Embodiments of the present invention provide a memory array of macro cells. Each macro cell comprises a storage element and a calibration element. The storage element and its corresponding...
8982617 Block closure techniques for a data storage device  
A data storage device includes a controller and a non-volatile memory that includes a three-dimensional (3D) memory. A method includes initiating a write operation to write first data to a first...
8982618 Nonvolatile memory device and related method of operation  
A nonvolatile memory device comprises a nonvolatile memory chip comprising a static latch, first and second dynamic latches that receive the data stored in the static latch through a floating...
8982619 Managing non-volatile media  
Apparatuses, systems, and methods are disclosed to manage non-volatile media. A method includes determining a configuration parameter for a set of storage cells of a non-volatile recording medium....
8982636 Accessing method and a memory using thereof  
A memory comprises a memory cell, a sense amplifier, and a control unit. The memory cell stores a first bit and a second bit. The sense amplifier senses a first cell current and a second cell...
8984369 Shaping codes for memory  
Apparatuses and methods associated with shaping codes for memory are provided. One example apparatus comprises an array of memory cells and a shaping component coupled to the array and configured...
8982629 Method and apparatus for program and erase of select gate transistors  
Techniques are provided for programming and erasing of select gate transistors in connection with the programming or erasing of a set of memory cells. In response to a program command to program...
8976584 Flash memory device and method of programming the same  
A method is provided for programming a flash memory device including memory cells formed in a direction perpendicular to a substrate, a first sub word line connected to first memory cells and...
8976590 Semiconductor memory device  
A semiconductor memory device includes a memory block as a code storage memory area which has a large memory capacity and in which the number of bits to be written at once is large, and a memory...
8976583 Non-volatile semiconductor memory device and reading method thereof  
Provided are a semiconductor memory device has improved read disturbance characteristics as well as improved retention characteristics at a high temperature, and a reading method thereof. The...
8975685 N-channel multi-time programmable memory devices  
N-channel multi-time programmable memory devices having an N-conductivity type substrate, first and second P-conductivity type wells in the N-conductivity type substrate, N-conductivity type...
8976582 Analog sensing of memory cells in a solid-state memory device  
A memory device that includes a sample and hold circuit coupled to a bit line. The sample and hold circuit stores a target threshold voltage for a selected memory cell. The memory cell is...