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7605447 Highly manufacturable SRAM cells in substrates with hybrid crystal orientation  
The present invention relates to a semiconductor device structure that includes at least one SRAM cell formed in a substrate. Such SRAM cell comprises two pull-up transistors, two pull-down...
7598544 Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same  
Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube...
7577010 Integrated circuits, methods for manufacturing integrated circuits, integrated memory arrays  
The present invention relates generally to integrated circuits, to methods for manufacturing integrated circuits, and to integrated memory arrays.
7548456 Combo memory cell  
A combo memory cell having a SRAM cell and a mask-ROM code programmer. The SRAM cell comprises first and second inverters. The first inverter comprises a first PMOS transistor and a first NMOS...
7511998 Non-volatile memory device and method of fabricating the same  
A non-volatile memory device, and method of forming the same, increases or maximizes the performance of an ultramicro-structured device. In one embodiment, a non-volatile memory device comprises a...
7480185 Ballistic injection NROM flash memory  
A split NROM flash memory cell is comprised of source/drain regions in a substrate. The split nitride charge storage regions are insulated from the substrate by a first layer of oxide material and...
7477541 Memory elements and methods of using the same  
In a first aspect, a first apparatus is provided. The first apparatus is a memory element that includes (1) one or more MOSFETs each including a dielectric material having a dielectric constant of...
7471555 Thermally insulated phase change memory device  
A thermally insulated memory device includes a memory cell, the memory cell having electrodes with a via extending therebetween, a thermal insulator within the via and defining a void extending...
7417288 Substrate solution for back gate controlled SRAM with coexisting logic devices  
A semiconductor structure that includes at least one logic device region and at least one static random access memory (SRAM) device region wherein each device region includes a double gated field...
7414896 Technique to suppress bitline leakage current  
Methods and apparatus that may help reduce standby current in memory devices are provided. By separating equalizing and precharging functions into separate circuit structures, current paths between...
7405967 Microelectronic programmable device and methods of forming and programming the same  
A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of...
7391640 2-transistor floating-body dram  
A dynamic random access memory includes a cell having a circuit between a floating-body transistor and a bit line. Activation of the circuit is controlled to provide isolation between the floating...
7382650 Method and apparatus for sector erase operation in a flash memory array  
A memory device is provided which includes a substrate, a common P-well isolated from the substrate, a plurality of sectors, and a common sector selection transistor configured to select one of the...
7307877 Natural analog or multilevel transistor DRAM-cell  
Circuits and methods to design and to fabricate said circuits to accomplish a two-level DRAM cell or a multilevel DRAM cell using a natural transistor have been achieved. The usage of a natural...
7268042 Nonvolatile semiconductor memory and making method thereof  
A nonvolatile semiconductor memory device of a split gate structure having a gate of low resistance suitable to the arrangement of a memory cell array is provided. When being formed of a side wall...
7257022 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7227169 Programmable surface control devices and method of making same  
Programmable surface control devices whose physical features, such as surface characteristics and mass distribution, are controlled by the presence or absence of an electrodeposition of metal...
7199008 Microelectronic device having floating gate protective layer and method of manufacture therefor  
A method of manufacturing a microelectronic device including forming a memory cell having a floating gate located over a substrate, a dielectric layer over the floating gate, and a control gate...
7193888 Nonvolatile memory circuit based on change in MIS transistor characteristics  
A memory circuit includes a latch having a first node and a second node, a plate line, a word selecting line, a first MIS transistor having source/drain nodes thereof coupled to the first node and...
7186621 Method of forming a negative differential resistance device  
A negative differential resistance (NDR) field-effect transistor element is disclosed, formed on a silicon-based substrate using conventional MOS manufacturing operations. Methods for improving a...
7184297 Semiconductor memory device  
A semiconductor memory includes: a first node and a second node; a first MIS transistor, having first conductive carrier flows, including a source electrode connected to a first power supply, a...
7149104 Storage and recovery of data based on change in MIS transistor characteristics  
A memory circuit includes a latch having a first node and a second node, a word selecting line, a first MIS transistor having the source/drain nodes thereof coupled to the first node and a...
7142450 Programmable sub-surface aggregating metallization structure and method of making same  
A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at...
7139216 Semiconductor storage device having a counter cell array to store occurrence of activation of word lines  
A semiconductor storage device includes memory cells having a floating body region and storing data by accumulating or releasing electric charges in or from the floating body region; a memory cell...
7116579 Semiconductor storage device and mobile electronic apparatus  
A semiconductor storage device is provided, which comprises a memory array comprising memory elements, a write state machine for performing a sequence of a program or erase operation with respect...
7110297 Semiconductor storage device and mobile electronic apparatus  
A semiconductor storage device is provided, which comprises a memory array comprising memory elements. Each memory element comprises a gate electrode, a channel region, first and second diffusion...
7109748 Integrated circuits with reduced standby power consumption  
Integrated circuit standby power consumption may be reduced using a reverse-bias transistor control arrangement that reduces transistor leakage current. Integrated circuit transistors may be turned...
7084454 Nonvolatile integrated semiconductor memory  
A nonvolatile integrated semiconductor memory has an arrangement of layers with a tunnel barrier layer and a charge-storing level. The charge-storing level has a dielectric material which stores...
7081381 Flash memory cell and the method of making separate sidewall oxidation  
A process and product for making integrated circuits with dense logic and/or linear regions and dense memory regions is disclosed. On a common substrate, a dual hard mask process separately forms...
7072205 Floating-body DRAM with two-phase write  
A row of floating-body single transistor memory cells is written to in two phases.
7050319 Memory architecture and method of manufacture and operation thereof  
An architecture, and its method of formation and operation, containing a high density memory array of semi-volatile or non-volatile memory elements, including, but not limited to, programmable...
7009892 Semiconductor memory device and portable electronic apparatus  
A semiconductor memory device includes a control logic circuit for generating read selection signals each selecting one plane for reading and write selection signals each selecting one plane for...
7009873 Magnetic random access memory  
A magnetic random access memory in which “0” data and “1” data are associated with resistance values of a non-magnetic layer of a magnetoresistive element, the resistance values being...
7009868 Memory device having a transistor and one resistant element as a storing means and method for driving the memory device  
A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate,...
7002872 Semiconductor memory device with a decoupling capacitor  
A semiconductor memory device includes a core block having sub-arrays and sense amplifier regions. First and second charge storing regions are disposed at sides of the core block. First and second...
6998697 Non-volatile resistance variable devices  
A chalcogenide comprising material is formed to a first thickness over the first conductive electrode material. The chalcogenide material comprises A x B y . A metal comprising layer is formed to a...
6985384 Spacer integration scheme in MRAM technology  
A magneto resistive memory device is fabricated by etching a blanket metal stack comprised of a buffer layer, pinned magnetic layer, a tunnel barrier layer and a free magnetic layer. The problem of...
6940307 Integrated circuits with reduced standby power consumption  
Integrated circuit standby power consumption may be reduced using a reverse-bias transistor control arrangement that reduces transistor leakage current. Integrated circuit transistors may be turned...
6914800 Structures, methods, and systems for ferroelectric memory transistors  
Integrated memory circuits, key components in thousands of electronic and computer products, have recently been made using ferroelectric memory transistors, which offer faster write cycles and...
6903423 Integrated semiconductor memory and method for reducing leakage currents in an integrated semiconductor  
An integrated semiconductor memory can include a plurality of subcircuit blocks arranged on nonoverlapping area sections. The subcircuit blocks each have a block supply line and a block ground...
6870233 Multi-bit ROM cell with bi-directional read and a method for making thereof  
A multi-bit Read Only Memory (ROM) cell has a semiconductor substrate of a first conductivity type with a first concentration. A first and second regions of a second conductivity type spaced apart...
6867999 Memory device including a transistor having functions of RAM and ROM  
A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor...
6819588 Memory element, method for structuring a surface, and storage device  
The invention is essentially characterized in that in a first step a substrate is provided, which is coated with defined pattern of protrusions of a coating layer of a different material, so that...
6816399 Semiconductor memory device including ferroelectric memory formed using ferroelectric capacitor  
A semiconductor memory device includes a memory cell block, gate lines and branch lines. The memory cell block includes memory cells connected in series. Each of memory cells has a cell transistor...
6798692 Programmable sub-surface aggregating metallization structure and method of making same  
A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at...
6714436 Write operation for capacitorless RAM  
A method for writing data to single-transistor capacitorless (1T/0C) RAM cell, wherein the cell structure is predicated on an SOI MOS transistor that has a floating body region ( 12 ). Data is...
6661701 Three-transistor DRAM cell and associated fabrication method  
The three-transistor DRAM cell has a memory transistor formed as a field-effect transistor with a short-channel section and a long-channel section. A second insulating layer and a conductive layer...
6611040 Anti-fuse structure of writing and reading in integrated circuits  
An information write-register embedded in an integrated circuit (IC) is made of a plurality of independently addressable gate-controlled components formed in an isolated p-well nested in a n-well....
6574161 Semiconductor integrated circuit device having a hierarchical power source configuration  
A main source voltage transmission line for transmitting a source voltage VCH as one power source and a sub source voltage transmission line are provided corresponding to a gate circuit. A...
6560142 Capacitorless DRAM gain cell  
A nondestructive read, two-device gain cell for a DRAM memory, based on conventional complementary metal oxide technology is disclosed. The charge is stored on the gate of a first MOSFET, with a...
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