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7580299 |
Circuit for generating a reference voltage
A circuit for generating a reference voltage in a memory device includes a switching section, a first voltage generator, a second voltage generator and a comparator. The switching section controls...
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7477540 |
Bipolar reading technique for a memory cell having an electrically floating body transistor
A technique of sampling, sensing, reading and/or determining the data state of a memory cell (of, for example, a memory cell array) including an electrically floating body transistor. In this...
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7002841 |
MRAM and methods for manufacturing and driving the same
An MRAM having improved integration density and ability to use a magnetic tunneling junction (MTJ) layer having a low MR ratio, and methods for manufacturing and driving the same, are disclosed....
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6961262 |
Memory cell isolation
Device and method for memory cell isolation. The memory cell includes a resistive component, such as a magnetic random access memory (MRAM) cell, and an isolation component, such as a four-layer...
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6535435 |
Reference voltage generator permitting stable operation
A reference voltage generation circuit is provided which includes a p-channel type MOSFET used as an input transistor to allow a sufficient current to flow through a differential amplifier even if...
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6292390 |
Semiconductor device
A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition I BE <I CB according to a voltage applied across a base and emitter where I...
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5966324 |
Static semiconductor memory device driving bit line potential by bipolar transistor shared by adjacent memory cells
Memory cells which are adjacent to each other along a column direction share a bipolar transistor driving the potential level of a corresponding bit line. Other memory cells which are adjacent to...
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5646897 |
Logic gate circuit and parallel bit test circuit for semiconductor memory devices, capable of operation at low power source levels
A logic circuit is provided for a memory device which can be operated at a high speed with a lower voltage power source level than conventional devices. This logic circuit can be used in a...
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5574683 |
Memory device and a method for writing information in the memory device
A memory device comprises a row address signal line Ax, a pair of column address signal lines Ay1, Ay2, a standby signal line Sb, a memory cell provided at an area where the row address signal line...
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5491654 |
Static random access memory device having thin film transistor loads
In a static random access memory device where thin film transistors are used memory cell loads, first and second semiconductor layers having source regions, channel regions and drain regions of the...
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5383153 |
Semiconductor memory device with flash-clear function
A semiconductor memory device equipped with a flash-clear function has a plurality of flip-flop type memory cells each of which is formed by a first multi-emitter transistor and a second...
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5311465 |
Semiconductor memory device that uses a negative differential resistance
A semiconductor memory device comprises a memory cell transistor that includes two active parts each including therein an emitter and a base and showing a negative differential resistance. The...
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5287303 |
SCR type memory apparatus
An SCR type memory apparatus which is short in access time, easy in setting current values upon reading and writing and easy in constructing a peripheral circuit with less power supply voltage...
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5276638 |
Bipolar memory cell with isolated PNP load
A bipolar memory array and memory cell. The memory cell has a pair of cross coupled NPN storage transistors and a pair of PNP load transistors. The collector of each of the load transistors is...
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5272668 |
Semiconductor memory
A semiconductor memory circuit comprises a plurality of memory cells each connected to a corresponding word line and a corresponding pair of digit lines connected connected to a sense amplifier....
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5255225 |
Semiconductor integrated circuit device and memory consisting of semiconductor integrated circuit
A semiconductor integrated circuit device including a level conversion circuit in which the simplifying of the circuit and the increasing of the speed of operation have been attained is provided. A...
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5218567 |
Match detection circuit for cache memory apparatus
A cache memory apparatus made up of a memory cell array (300) and a match detection circuit is disclosed. The match detection circuit produces a detection signal related to whether a search data...
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5216630 |
Static semiconductor memory device using bipolar transistor
Disclosed is a bipolar SRAM including, in each memory cell, two NPN multiemitter transistors, with a base of one transistor being cross-connected to a collector of the other transistor. The...
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5200924 |
Bit line discharge and sense circuit
A bit line discharge and sense circuit is provided for use with a static RAM that includes a row and column array of memory cells addressable via first and second bit lines and also a row select...
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5189640 |
High speed, multi-port memory cell utilizable in a BICMOS memory array
A multi-port memory cell utilizes a storage cell to define complementary data storage nodes. Each read port of the memory cell includes two FETs respectively coupled between one of a pair of...
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5179538 |
Memory system including CMOS memory cells and bipolar sensing circuit
A memory system (10) is disclosed including a memory array (14), decoder circuit (16), and sensing circuit (17). The memory array includes a plurality of two-port CMOS memory cells (42) arranged in...
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5172340 |
Double stage bipolar sense amplifier for BICMOS SRAMS with a common base amplifier in the final stage
There is described a double stage sense amplifier (4) in bipolar technology achieving very high speed operation without saturation or connection problems. For each memory cell column of the...
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5121357 |
Static random access split-emitter memory cell selection arrangement using bit line precharge
This invention relates generally to the static, random access, semiconductor memory arrays which incorporate split-emitter memory cells. The latter are accessed during a read cycle of a selected...
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5117391 |
Bipolar memory cell array biasing technique with forward active PNP load cell
A bipolar memory array arranged in a row and column matrix is responsive to a plurality of word line driver transistors for selecting one row of memory cells thereof. The current flowing through...
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5083292 |
Bipolar random access memory
A bipolar random access memory comprises a plurality of memory cells arranged in row and column formation, a plurality of word lines provided in correspondence to respective rows of the memory...
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5043939 |
Soft error immune memory
An alpha radiation immune integrated circuit memory cell has a pair of secondary transistors connected to cross-couple the primary transistors to form a flow, secondary storage node. The secondary...
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5029129 |
High-speed bipolar memory system
A switched load diode cell has been developed wherein first and second multi-emitter NPN transistors are provided having bases cross coupled to the other's collectors in typical latch fashion as...
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5029127 |
Bipolar SRAM having word lines as vertically stacked pairs of conductive lines parallelly formed with holding current lines
There is implemented memory cells and corresponding signal lines associated therewith in bipolar type static random access memories employing wirings of multi-layer construction for transmitting a...
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4964081 |
READ-WHILE-WRITE RAM CELL
A READ-WHILE-WRITE current-mode logic RAM cell suitable for use in a RAM device having the ability to simultaneously write and read data. The RAM cell contains a bit-cell consisting of flip-flop...
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4926378 |
Bipolar static RAM having two wiring lines for each word line
There is implemented memory cells and corresponding signal lines associated therewith in bipolar type static random access memories employing wirings of multi-layer construction for transmitting a...
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4899311 |
Clamping sense amplifier for bipolar ram
A sense amplifier is provided for a bipolar random access memory that has memory cells arranged in a column and a pair of bit lines for said column of memory cells. A first bipolar transistor has...
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4864540 |
Bipolar ram having no write recovery time
A bipolar random access memory having no write recovery time. During a data write operation, while the memory state of the memory cell is being shifted, a data bypass circuit sets a sense latch in...
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4864539 |
Radiation hardened bipolar static RAM cell
This invention relates generally to Static Random Access Memory (SRAM) cells and more particularly, relates to a SRAM cell wherein soft-error due to α-particle radiation is reduced by permitting...
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4858183 |
ECL high speed semiconductor memory and method of accessing stored information therein
A hybrid ECL memory includes a hybrid memory array 36 which utilizes cross coupled CMOS latches (70). Each CMOS latch (70) is accessed by an ECL decoder (40) and an ECL Word Line driver (42) to...
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4823315 |
Plural emitter memory with voltage clamping plural emitter transistor
A transistor memory cell device comprising a pair of cross-coupled transistors constituting storage elements for storing binary information and having column drive emitter inputs to which a...
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4783765 |
Bipolar memory cell with cross-connected transistors and an external capacitance
An integrated bipolar memory cell with random access, includes an upper word line, a lower word line, two bit lines, two transistors each having two emitters, a base and a collector fed back...
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4769785 |
Writing speed of SCR-based memory cells
Load resistors are connected in series between the PNP portions of the SCRs and the upper word-line. The load presented to the NPN portions of the SCRs is thus a composite formed of a PNP...
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4747083 |
Semiconductor memory with segmented word lines
A semiconductor memory device including at least word lines and bit lines with memory cells located at each cross point therebetween. Each of the word lines is divided to form segmented word lines...
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4745580 |
Variable clamped memory cell
An improved memory cell circuit in which the collector of the "ON" transistor is clamped to a variable voltage level to prevent saturation. Saturation is prevented by providing a mechanism for...
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4742488 |
Sense amplifier/write circuit for semiconductor memories
An adjustable sense amplifier circuit for read/write control of solid state memory devices is described. In a write mode the circuit includes a write select path, coupled to a current source and...
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4740917 |
Memory using conventional cells to perform a ram or an associative memory function
Memory comprising a matrix of conventional Harper pnp cells and peripheral circuits which allows it to be used either as a random access memory or as an associative memory. In addition to the...
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4733372 |
Semiconductor memory having redundancy
Herein disclosed is a bipolar memory having redundancy, which can be produced with a small area. In this semiconductor memory having a body memory for storing data and a spare memory for relief of...
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4730277 |
Circuit for biasing row of memory cells
A circuit for selecting a row of memory cells of an array is disclosed that reduces selection time, eliminates the need for providing a regulated voltage for biasing an active load, and utilizes...
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4725979 |
Emitter coupled logic circuit having fuse programmable latch/register bypass
An emitter coupled logic circuit includes a bypass circuit which provides a conductive path for current when a programmable fuse is blown, so that input data is transmitted independently of the...
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4698790 |
Programmable read only memory adaptive row driver circuit
An I 2 L programmable read only memory (PROM) row driver circuit sinks current from a row of memory elements when selectively activated. The circuit operates in the read mode at very low power...
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4692900 |
Semiconductor memory device having block pairs
A semiconductor memory device provided with at least one block pair. Each block contains therein bit line pairs, word lines, memory cells, and circuitry for writing data by cooperating with the bit...
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4677455 |
Semiconductor memory device
In a semiconductor memory cell having PNPN type memory cells, a vertical PNPN element is used as a load transistor and a sense transistor or a hold transistor, or both. A buried layer is used as a...
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4646268 |
Semiconductor bipolar memory device operating in high speed
A semiconductor memory device composed of bipolar transistors is disclosed. A read/write control circuit includes a voltage producing section which produces a reading-out voltage used for reading...
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4618944 |
Semiconductor memory having word line discharge current controller
A semiconductor memory comprising at least memory cells, word lines (W + , W - ), bit lines (BL, BL) and word line discharge circuits to be co-operated together with a word line discharge current...
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4617653 |
Semiconductor memory device utilizing multi-stage decoding
A semiconductor memory device includes a plurality of memory cells arranged in a matrix form and a decoder circuit selecting a row of the matrix in response to an address signal. The decoder...
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