Matches 1 - 50 out of 366 1 2 3 4 5 6 7 8 >
Match Document Document Title
7630235 Memory cells, memory devices and integrated circuits incorporating the same  
A memory cell is provided which includes an access transistor and a gated lateral thyristor (GLT) device. The access transistor includes a source node. The gated lateral thyristor (GLT) device...
7619917 Memory cell with trigger element  
A memory device includes a plurality of word lines extending as rows and bit lines extending as columns. A memory cell is coupled between a word line and a bit line, wherein the memory cell...
7593256 Memory array with readout isolation  
Methods and apparatus for differentially measuring the bit state of a particular element in an array of passive nonlinear elements against the output of a reference generator. The reference...
7582893 Semiconductor memory device comprising one or more injecting bilayer electrodes  
The subject invention provides systems and methods that facilitate formation of semiconductor memory devices comprising memory cells with one or more injecting bilayer electrodes. Memory arrays...
7558100 Phase change memory devices including memory cells having different phase change materials and related methods and systems  
A phase change memory device may include an integrated circuit substrate and first and second phase change memory elements on the integrated circuit substrate. The first phase change memory element...
7548454 Memory array with readout isolation  
Methods and apparatus for measuring the bit state of a particular element in an array of passive nonlinear elements that are insensitive to loading effects from external connections to the array....
7548455 Multi-valued logic/memory cells and methods thereof  
A memory cell and method for making a memory cell in accordance with embodiments of the present invention includes two or more tunnel diodes, a loading system, and a driving system. The two or more...
7539044 Memory device with capacitor and diode  
One embodiment of the present invention relates to an integrated circuit that includes a memory cell. The memory cell includes a capacitor configured to store a charge or voltage. The capacitor...
7538395 Method of forming low capacitance ESD device and structure therefor  
In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
7525832 Memory device and semiconductor integrated circuit  
First electrode layer includes a plurality of first electrode lines (W 1 , W 2 ) extending parallel to each other. State-variable layer lying on the first electrode layer includes a plurality of...
7522448 Controlled pulse operations in non-volatile memory  
A passive element memory device is provided that includes memory cells comprised of a state change element in series with a steering element. Controlled pulse operations are used to perform...
7508050 Negative differential resistance diode and SRAM utilizing such device  
A negative differential resistance (NDR) diode and a memory cell incorporating that NDR diode are provided. The NDR diode comprises a p-type germanium region in contact with an n-type germanium...
7505324 Semiconductor memory device with a stacked gate including a floating gate and a control gate  
A semiconductor memory device comprises a first to a fourth semiconductor layer of a first conductivity type which are formed in a fifth semiconductor layer of a second conductivity type in such a...
7483296 Memory device with unipolar and bipolar selectors  
A memory device is proposed. The memory device includes a plurality of memory cells, wherein each memory cell includes a storage element and a selector for selecting the corresponding storage...
7474558 Gated diode nonvolatile memory cell array  
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array...
7470352 Sensor arrangement  
Sensor arrangement having row and column lines arranged in first and second directions, respectively, sensor arrays arranged in crossover regions of the row and column lines, a detector, and a...
7466586 Diode-based capacitor memory and its applications  
Diode-based capacitor memory uses relatively small capacitor, and uses a diode as an access device instead of MOS transistor, wherein the diode has four terminals, the first terminal is connected...
7460395 Thyristor-based semiconductor memory and memory array with data refresh  
A new memory cell can contain only a single thyristor. There is no need to include an access transistor in the cell. In one embodiment, the thyristor is a thin capacitively coupled thyristor. The...
7453755 Memory cell with high-K antifuse for reverse bias programming  
An integrated circuit and associated method of programming are provided. Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode. The antifuse is...
7450416 Utilization of memory-diode which may have each of a plurality of different memory states  
The present invention is a method of undertaking a procedure on a memory-diode, wherein a memory-diode is provided which is programmable so as to have each of a plurality of different threshold...
7447055 Multiplexer interface to a nanoscale-crossbar  
Various embodiments of the present invention are directed to electronic means for reading the content of a nanowire-crossbar memory. In one embodiment of the present invention, a microscale or...
7447063 Nonvolatile semiconductor memory device  
The nonvolatile semiconductor memory device according the this invention has a plurality of memory cells arranged in a matrix form and each having a floating gate; at least one first diode...
7417887 Phase change memory device and method of driving word line thereof  
A method and device for driving the word lines of a phase change memory device is provided. The method may include applying a first voltage level to non-selected word lines and a second voltage...
7411810 One-time programmable memory  
In the present invention, one-time programmable memory includes a diode as an access device and a capacitor as a storage device, the diode includes four terminals, wherein the first terminal is...
7405960 Semiconductor memory device and method for biasing dummy line therefor  
A semiconductor memory device and a dummy line biasing method in which in the semiconductor memory device of a diode structure including a plurality of memory cells each having one variable...
7379317 Method of programming, reading and erasing memory-diode in a memory-diode array  
A memory array includes first and second sets of conductors and a plurality of memory-diodes, each connecting in a forward direction a conductor of the first set with a conductor of the second set....
7376008 SCR matrix storage device  
One of the simplest forms of data storage devices is the diode array storage device. However, a problem with diode array storage devices is that as the size of the array increases, the number of...
7372306 Method and apparatus for stability control using fast excitation in circuits having elements with negative differential resistance  
A method and state stabilizer for enhancing computing functionality by using fast excitations are described. The state stabilizer includes a voltage source for producing fast excitations having an...
7362609 Memory cell  
A one-transistor (1T) NVRAM cell that utilizes silicon carbide (SiC) to provide both isolation of non equilibrium charge, and fast and non destructive charging/discharging. To enable sensing of...
7352617 Nano tube cell and memory device using the same  
A nano tube cell and a memory device using the same features a cross point cell using a capacitor and a PNPN nano tube switch to reduce the whole memory size. In the memory device, the unit nano...
7352610 Volatile memory elements with soft error upset immunity for programmable logic device integrated circuits  
Memory elements are provided that are immune to soft error upset events when subjected to high-energy atomic particle strikes. The memory elements have nonlinear high-impedance two-terminal...
7349248 Non-volatile memory  
A non-volatile memory cell includes an upper electrode; a lower electrode and a state-variable region, in which a conductive state changes only once. The state variable region is formed in a region...
7349273 Access circuit and method for allowing external test voltage to be applied to isolated wells  
An access circuit selectively couples an externally accessible terminal to each of a plurality of isolated DRAM wells in which respective DRAM arrays are fabricated. The access circuit for each...
7310266 Semiconductor device having memory cells implemented with bipolar-transistor-antifuses operating in a first and second mode  
A DAC having a memory mat including a plurality of first memory cells, and a plurality of output lines connected to the plurality of first memory cells. Each of the plurality of memory cells has a...
7304888 Reverse-bias method for writing memory cells in a memory array  
A memory array having memory cells each comprising a diode and a phase change material or antifuse is reliably programmed by maintaining all word lines and bit lines connected to unselected memory...
7298645 Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure  
The present invention discloses a nano tube cell, and a semiconductor device having the nano tube cell and a double bit line sensing structure. The cell array circuit includes a plurality of top...
7283388 Memory device using multiple layer nano tube cell  
A memory device features a multiple layer nano tube cell. In the memory device, a cross point cell array including a capacitor and a PNPN nano tube switch is effectively arranged to reduce the...
7283383 Phase change resistor cell, nonvolatile memory device and control method using the same  
A nonvolatile memory device features a phase change resistor cell as a cross-point cell using a phase change resistor and a serial diode switch. The phase change resistor has logic data...
7277312 Integrated semiconductor memory with an arrangement of nonvolatile memory cells, and method  
In integrated semiconductor memories whose stored information is represented by the magnitude of the ohmic resistance of layer stacks with a respective layer comprising a solid electrolyte, the...
7272038 Method for operating gated diode nonvolatile memory cell  
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array...
7266006 Multiple-layer serial diode cell and nonvolatile memory device using the same  
A multiple-layer serial diode cell and a nonvolatile memory device using the same enable reduction in the number of cell arrays by configuring cell arrays including a nonvolatile ferroelectric...
7245525 Data restore in thryistor based memory devices  
In a thyristor based memory cell, one end of a reversed-biased diode is connected to the cathode of the thyristor. During standby, the second end of the diode is biased at a voltage that is higher...
7242607 Diode-based memory including floating-plate capacitor and its applications  
Floating plate memory includes a diode as an access device, wherein the diode has four terminals, the first terminal serves as a word line, the second terminal serves as a storage node, the third...
7233520 Process for erasing chalcogenide variable resistance memory bits  
A method of erasing a chalcogenide variable resistance memory cell is provided. The chalcogenide variable resistance memory cell includes a p-doped substrate with an n-well and a chalcogenide...
7215564 Semiconductor memory component in cross-point architecture  
A programmable metallization memory cell with a storage region ( 3 ) formed from a chalcogenide glass and an electrode ( 4 ) which is preferably silver is located at the crossing point of a...
7212454 Method and apparatus for programming a memory array  
A method and apparatus for programming a memory array are disclosed. In one embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is...
7209384 Planar capacitor memory cell and its applications  
A capacitor memory is realized, wherein a capacitor stores data and a diode controls to store data “1” or “0”. Diode has four terminals wherein first terminal serves as word line, second...
7203129 Segmented MRAM memory array  
In one example, an MRAM memory array includes a plurality of word lines, a plurality of bit lines crossing the word lines, and a plurality of first and second diodes, and magnetic tunnel junction...
7196926 Vertical capacitor memory cell and its applications  
A capacitor memory is realized, wherein a capacitor stores data and a diode controls to store data “1” or “0”. Diode has four terminals wherein first terminal serves as word line, second...
7173843 Serial diode cell and nonvolatile memory device using the same  
A nonvolatile memory device features a serial diode cell as a cross-point cell using a nonvolatile ferroelectric capacitor and a serial diode chain. The serial diode cell comprises a ferroelectric...
Matches 1 - 50 out of 366 1 2 3 4 5 6 7 8 >