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RE40995 |
Multi-element resistive memory
A memory device , and methods relating thereto, having memory cells in which a single an access transistor controls the grounding of at least two storage resistive memory elements , such...
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7616478 |
Magnetic storage device
A magnetic storage device comprises an array of magnetic memory cells ( 50 ). Each cell ( 50 ) has, in electrical series connection, a magnetic tunnel junction (MTJ) ( 30 ) and a Zener diode ( 40...
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7616477 |
Non-volatile magnetic memory device
A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write...
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7616476 |
Thin film magnetic memory device suitable for drive by battery
After a digit line is charged to a power supply voltage by turn-on of a first switching element, the first switching element is turned off and a second switching element is turned on, whereby the...
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7616475 |
Memory element and memory
A memory element including a memory layer that retains information based on a magnetization state of a magnetic material is provided. In the memory element, a magnetization pinned layer is provided...
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7613868 |
Method and system for optimizing the number of word line segments in a segmented MRAM array
A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells...
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7613036 |
Memory element utilizing magnetization switching caused by spin accumulation and spin RAM device using the memory element
Provided is a spin memory that has excellent durability. The spin memory includes a ferromagnetic word line, a nonmagnetic bit line that crosses the ferromagnetic word line, a wiring disposed so as...
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7613035 |
Magnetic memory device and method of writing into the same
A magnetic memory device includes a memory cell including magnetoresistance effect elements MTJ 1 , MTJ 2 and a select transistor connected to the connection node of the magnetoresistance effect...
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7613034 |
Magnetic memory and method for reading-writing information from-to magnetic storage element
A magnetic memory is provided in which the margin between a write current and a read current can be reduced. A magnetic storage element includes: a first magnetic layer in which the direction of...
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7613033 |
Magnetic storage device
A magnetic storage device is provided which has significantly reduced power consumption. In the magnetic storage device, a yoke is arranged so as to circumferentially surround part of a line...
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7611912 |
Underlayer for high performance magnetic tunneling junction MRAM
An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in...
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7609547 |
Biosensor and sensing cell array using the same
A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their...
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7606086 |
Nonvolatile semiconductor memory device
A nonvolatile semiconductor memory device comprises a memory cell array in which memory cells are arranged in a row and column direction, a circuit for applying a first voltage to a selected bit...
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7606065 |
Three-dimensional magnetic memory having bits transferrable between storage layers
Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be...
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7605437 |
Spin-transfer MRAM structure and methods
A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet...
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7602637 |
Integrated circuits; methods for operating an integrating circuit; memory modules
Embodiments of the invention relate generally to integrated circuits, to methods for operating an integrating circuit, and to memory modules. In an embodiment of the invention, an integrated...
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7602636 |
Spin MOSFET
A spin MOSFET includes: a semiconductor substrate; a first magnetic film formed on the semiconductor substrate and including a first ferromagnetic layer, a magnetization direction of the first...
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7602033 |
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
A high performance TMR sensor is fabricated by employing a composite inner pinned (AP 1 ) layer in an AP 2 /Ru/AP 1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom...
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7602000 |
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy...
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7599215 |
Magnetoresistive random access memory device with small-angle toggle write lines
Disclosed herein are toggle-mode magnetoresistive random access memory (MRAM) devices having small-angle toggle write lines, and related methods of toggle-mode switching MRAM devices. Also...
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7599210 |
Nonvolatile memory cell, storage device and nonvolatile logic circuit
One or serially connected field effect transistors are cross coupled with each other, first terminals of nonvolatile variable resistance elements are connected to their storage nodes, and the other...
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7599209 |
Memory circuit including a resistive memory element and method for operating such a memory circuit
The present invention relates to a memory circuit and method of operating the same. In at least one embodiment, the memory circuit includes a resistive memory element coupled to a plate potential...
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7598597 |
Segmented magnetic shielding elements
A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of...
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7598579 |
Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to <1×10 6 A/cm 2 is disclosed. The MTJ has a Co 60 Fe 20 B 20 /MgO/Co 60 Fe 20 B 20 configuration where...
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7596045 |
Design structure for initializing reference cells of a toggle switched MRAM device
A design structure embodied in a machine readable medium used in a design process includes an apparatus for initializing a reference cell in a toggle switched MRAM device, with a first sense...
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7596018 |
Spin memory with write pulse
An electron spin-based memory cell has a first ferromagnetic layer with a changeable magnetization state and a second ferromagnetic layer with a fixed magnetization state. A non-volatile logic...
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7596017 |
Magnetic random access memory and method of reducing critical current of the same
A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer...
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7596015 |
Magnetoresistive element and magnetic memory
A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is...
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7596014 |
Semiconductor device
In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with...
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7595520 |
Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle...
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7593278 |
Memory element with thermoelectric pulse
A memory element comprises an addressable memory cell. A thermoelectric device couples to the memory cell. Electrical conductors provide a current pulse to the thermoelectric device. The current...
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7593254 |
Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
A variable resistance memory element and method of forming the same. The memory element includes a first electrode, a resistivity interfacial layer having a first surface coupled to said first...
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7593253 |
Semiconductor device
In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In...
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7593193 |
Magnetoresistive element and magnetic memory device
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second...
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7589994 |
Methods of writing data to magnetic random access memory devices with bit line and/or digit line magnetic layers
A magnetic random access memory (MRAM) device may include a substrate, a first magnetic layer on the substrate, and a digit line on the first magnetic layer. A magnetic tunnel junction structure...
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7586781 |
Magneto-resistance effect element and magnetic memory device
The invention relates to a magneto-resistance effect element and a magnetic memory device. Lowering the magnetic domain wall movement current and drive at room temperature in a current induction...
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7583529 |
Magnetic tunnel junction devices and magnetic random access memory
A magnetic random access memory (MRAM) is disclosed. The MRAM includes a first electrode, an antiferromagnetic layer formed over the first electrode, a pinned layer formed over the...
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7583527 |
Tunable resistor and method for operating a tunable resistor
A tunable resistor includes a resistor input terminal, a resistor output terminal, and at least one current path connected between the resistor input terminal and the resistor output terminal. The...
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7577020 |
System and method for reading multiple magnetic tunnel junctions with a single select transistor
A method for reading two or more magnetic tunnel junctions (MTJs) which are serially connected with a select transistor to form a memory string, the method comprises turning on the select...
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7577019 |
Magnetic memory cell with multiple-bit in stacked structure and magnetic memory device
A multi-bit magnetic memory cell in a stacked structure controlled by at least one read bit line and one read word line is provided. The multi-bit magnetic memory cell includes at least two...
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7577018 |
Readout circuit of magnetic memory
In an example, a determination circuit 5 determines whether an input waveform is a first waveform (=0) or a second waveform (=1). When magnetization switching is caused during writing, the second...
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7573736 |
Spin torque transfer MRAM device
The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned...
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7567454 |
Thin film magnetic memory device capable of conducting stable data read and write operations
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied...
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7567453 |
Advanced multi-bit magnetic random access memory device
An advanced multi-bit magnetic random access memory device and a method for writing to the advanced multi-bit magnetic random access memory device. The magnetic memory includes one or more...
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7564109 |
MRAM and method of manufacturing the same
A magnetic memory device includes a first write wiring line including a wiring layer formed in a trench in an insulation layer, a barrier metal layer buried in the trench over the wiring layer. And...
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7558103 |
Magnetic switching element and signal processing device using the same
A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control...
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7558101 |
Scan sensing method that improves sensing margins
Systems and methods for improving memory cell sensing margins by utilizing an optimal reference stimulus. A stimulus component applies a plurality of different reference stimuli to a plurality of...
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7556869 |
Electronic device and wiring with a current induced cooling effect, and an electronic device capable of converting a temperature difference into voltage
Localized temperature increases inside integrated circuits due to heating at operation are prevented or controlled by electronic devices or wirings with CPP (current-perpendicular-to-plane)...
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7554838 |
Simulating circuit for magnetic tunnel junction device
A simulating circuit for simulating the operation of a magnetic tunnel junction (MTJ) device having at least a free layer and a fixed layer is provided. The simulating circuit includes a closed...
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7554837 |
Magnetic memory device
A width and a thickness of a bit line are represented as W 1 and T 1 , respectively, a thickness of a digit line is represented as T 2 , and a distance from a center of the digit line in a...
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