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7626860 |
Optimized phase change write method
A method and system of writing data to a phase change random access memory (PCRAM) on an integrated circuit (IC). The method and system includes an array of phase change elements with a plurality...
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7626859 |
Phase-change random access memory and programming method
A programming method for a phase-change random access memory (PRAM) may be provided. The programming method may include determining an amorphous state of a chalcogenide material using programming...
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7626858 |
Integrated circuit having a precharging circuit
A memory includes a phase change element having a first side and a second side and a first line coupled to the first side of the element. The memory includes an access device coupled to the second...
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7626190 |
Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device
A memory device, in particular to a resistively switching memory device such as a Phase Change Random Access Memory (“PCRAM”), with a transistor is disclosed. Further, the invention relates to...
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7623401 |
Semiconductor device including multi-bit memory cells and a temperature budget sensor
One embodiment provides a semiconductor device including a plurality of multi-bit memory cells, a first temperature budget sensor, and a circuit. Each of the plurality of multi-bit memory cells is...
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7623370 |
Resistance change memory device
A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and...
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7619917 |
Memory cell with trigger element
A memory device includes a plurality of word lines extending as rows and bit lines extending as columns. A memory cell is coupled between a word line and a bit line, wherein the memory cell...
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7616472 |
Method and apparatus for non-volatile multi-bit memory
A memory device that selectably exhibits first and second logic levels. A first conductive material has a first surface with a first memory layer formed thereon, and a second conductive material...
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7613038 |
Semiconductor integrated circuit device
There is achieved a high-integrated and high-speed nonvolatile memory which can stabilize an operation of a phase-change memory for a short operation cycle time. A latch is provided in a write...
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7613037 |
Phase-change memory device and method of fabricating the same
A phase-change memory device includes a semiconductor substrate, a bit line and a word line arranged on the semiconductor substrate to intersect each other, and a phase-change material strip...
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7609545 |
Semiconductor device
To improve the reliability of the phase change element, unwanted current should not be flown into the element. Therefore, an object of the present invention is to provide a memory cell that stores...
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7609544 |
Programmable semiconductor memory device
The present invention provides a technology which can suppress a variation in a value after a write operation to minimum so as to facilitate multi-bit operation in a semiconductor device such as a...
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7608851 |
Switch array circuit and system using programmable via structures with phase change materials
A programmable via structure that includes at least two phase change material vias each directly contacting a heating element, the via structure further including a first terminal in contact with a...
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7608850 |
Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same
A phase change memory device includes a semiconductor substrate having active regions and an isolation structure; gate lines extending in a direction perpendicular to the active regions; a source...
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7606111 |
Synchronous page-mode phase-change memory with ECC and RAM cache
Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The time of the memory cell's set-current pulse can be 100 ns,...
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7606064 |
Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second...
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7606059 |
Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
A programmable resistance memory device includes a semiconductor substrate, at least one cell array, in which memory cells are arranged and formed above the semiconductor substrate. Each of the...
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7606056 |
Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured
A process for manufacturing a phase change memory array includes the steps of: forming a plurality of phase change memory cells in an array region of a semiconductor wafer, the phase change memory...
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7606055 |
Memory architecture and cell design employing two access transistors
An improved memory array architecture and cell design is disclosed in which the cell employs two access transistors. In one embodiment, the two access transistors in each cell are coupled at one of...
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7602633 |
Non-volatile memory device, method of manufacturing the same, and method of operating the same
A non-volatile memory device includes a substrate, resistance patterns, a gate dielectric layer, a gate electrode pattern, a first impurity region and a second impurity region. The substrate has...
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7599217 |
Memory cell device and manufacturing method
A memory cell device, having a memory material switchable between electrical property states by the application of energy, comprises an electrode, a separation layer against an electrode surface, a...
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7599216 |
Phase change memory devices and fabrication methods thereof
In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first...
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7599211 |
Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit
According to one embodiment of the present invention, an integrated circuit includes a plurality of resistivity changing memory cells, and a plurality of conductive elements being electrically...
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7599210 |
Nonvolatile memory cell, storage device and nonvolatile logic circuit
One or serially connected field effect transistors are cross coupled with each other, first terminals of nonvolatile variable resistance elements are connected to their storage nodes, and the other...
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7599209 |
Memory circuit including a resistive memory element and method for operating such a memory circuit
The present invention relates to a memory circuit and method of operating the same. In at least one embodiment, the memory circuit includes a resistive memory element coupled to a plate potential...
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7596016 |
Optically accessible phase change memory
A phase change memory may be configured to enable both optical and electrical accessing of the memory. In one embodiment, each cell may be electrically accessed by a laser beam, and at the same...
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7593278 |
Memory element with thermoelectric pulse
A memory element comprises an addressable memory cell. A thermoelectric device couples to the memory cell. Electrical conductors provide a current pulse to the thermoelectric device. The current...
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7593255 |
Integrated circuit for programming a memory element
An integrated circuit includes a resistance changing memory element and a circuit. The circuit is configured to program the memory element by iteratively applying a variable program pulse to the...
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7593254 |
Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
A variable resistance memory element and method of forming the same. The memory element includes a first electrode, a resistivity interfacial layer having a first surface coupled to said first...
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7593246 |
Low cost high density rectifier matrix memory
A high density memory device is fabricated three dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and...
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7592617 |
Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch...
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7589343 |
Memory and access device and method therefor
Briefly, in accordance with an embodiment of the invention, a memory and a method to manufacture the memory is provided. The memory may include a phase change material over a substrate. The memory...
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7586782 |
Semiconductor memory
A phase-change memory for employing chalcogenide as a recording medium is disclosed, which prevents the read disturbance from being generated, and reads data at high speed. In a phase-change memory...
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7586778 |
Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
A method is described for operating a bistable resistance random access memory having two memory layer stacks that are aligned in series is disclosed. The bistable resistance random access memory...
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7580278 |
Variable resistance memory device
A variable resistance memory device includes a memory cell array having a plurality of memory cells, a write driver which supplies a step-down set current to the memory cells, where the step-down...
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7579615 |
Access transistor for memory device
An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region...
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7577024 |
Streaming mode programming in phase change memories
A streaming programming mode may be implemented on user command in a phase change memory. In the streaming programming mode, accelerated programming may be achieved by ramping up to a voltage that...
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7577023 |
Memory including write circuit for providing multiple reset pulses
An integrated circuit includes an array of resistive memory cells having varying critical dimensions and a write circuit. The write circuit is configured to reset a selected memory cell by applying...
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7577022 |
Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage
An electric element includes: a first electrode ( 1 ); a second electrode ( 3 ); and a layer ( 2 ) connected between the first electrode and the second electrode and having a diode characteristic...
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7575950 |
Semiconductor device and a method of manufacturing the same
A semiconductor device having improved performance and improvement manufacturing yield is provided. After a semiconductor integrated circuit including a phase change memory and a nonvolatile memory...
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7573758 |
Phase-change random access memory (PRAM) performing program loop operation and method of programming the same
A PRAM and programming method are disclosed. The PRAM includes a memory cell array including a test cell, a write driver applying a program pulse and providing a program current to the memory cell...
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7571901 |
Circuit for programming a memory element
An integrated circuit includes a memory element and a circuit. The circuit is configured to program the memory element by applying one or more pulses to the memory element until a sensed resistance...
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7570524 |
Circuitry for reading phase change memory cells having a clamping circuit
A read circuit for reading at least one memory cell adapted to storing a logic value, the at least one memory cell including: a storage element made of a phase-change material; and an access...
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7570512 |
Phase change memory device with reduced unit cell size and improved transistor current flow and method for manufacturing the same
A phase change memory device includes: a semiconductor substrate having active areas; a pair of word lines formed over the active areas and connected with each other at each end thereof; source...
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7570511 |
Semiconductor memory device having a three-dimensional cell array structure
A semiconductor memory device includes a plurality of cell array layers including a plurality of word lines extending in a first direction, a plurality of bit lines extending in a second direction...
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7569844 |
Memory cell sidewall contacting side electrode
A memory cell includes a memory cell layer over a memory cell access layer. The memory cell access layer comprises a bottom electrode. The memory cell layer comprises a dielectric layer and a side...
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7564731 |
Software refreshed memory device and method
A software refreshed memory device comprises a plurality of memory cells that must be periodically refreshed to avoid losing data. Preferably, the memory cells can avoid losing data even though the...
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7564710 |
Circuit for programming a memory element
An integrated circuit includes a memory element configured to be programmed to any one of at least three resistance states and a circuit. The circuit is configured to program the memory element to...
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7561463 |
Thin film phase-change memory
A memory cell comprises a chalcogenide random access memory (CRAM) cell and a CMOS circuit. The CMOS circuit accesses the CRAM cell. The CRAM cell has a cross-sectional area that is determined by a...
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7560724 |
Storage device with reversible resistance change elements
It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density. A storage element includes resistance changing elements 10 having...
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