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7414883 Programming a normally single phase chalcogenide material for use as a memory or FPLA  
A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to...
7411818 Programmable fuse/non-volatile memory structures using externally heated phase change material  
A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes...
7405965 Phase change memory device  
A phase change memory device includes a semiconductor substrate which includes a plurality of phase change memory cells, a plurality of local bit lines extending over the semiconductor substrate,...
7405964 Integrated circuit to identify read disturb condition in memory cell  
A method of operating a phase change memory array is disclosed and includes identifying a read disturb condition associated with the phase change memory array, and performing a conditional refresh...
7400526 Memory element, memory read-out element and memory cell  
A memory element comprises a resistance element having a first resistance value in a first state and a second resistance value in a second state, it being possible to convert the resistance element...
7400522 Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation  
A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate, each memory cell having a stack structure of a variable...
7397695 Semiconductor memory apparatus and method for writing in the memory  
A phase change memory of high compatibility with DRAM. If a cell MC 0 , connected to a word line WL 0 L, is of a low resistance, current flowing through it is higher than that flowing in a dummy...
7397689 Resistive memory device  
A system having a memory cell. In certain embodiments, the memory cell includes a resistive memory element, an access transistor having a gate, a first terminal, and a second terminal, and a...
7397688 Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor  
Provided are a nonvolatile variable resistor with a structure capable of suppressing an increase in resistance in a case where scaling is applied to reduce a projected area on a plane, a memory...
7394680 Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode  
A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate to have a stack structure of a variable resistance element...
7394088 Thermally contained/insulated phase change memory device and method (combined)  
A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed...
7391669 Semiconductor memory device and core layout thereof  
A semiconductor memory device of one aspect includes a memory cell block including n global word lines, and corresponding m sub word lines for each of the n global word lines, where n and m are...
7391644 Phase-changeable memory device and read method thereof  
Disclosed is a phase-changeable memory device and a related method of reading data. The memory device is comprised of memory cells, a high voltage circuit, a precharging circuit, a bias circuit,...
7391643 Semiconductor memory device and writing method thereof  
To provide a semiconductor memory device comprising a phase-change memory and having high compatibility with DRAM interface. The memory cell array 18 comprises a memory cell that includes a...
7391642 Multilevel programming of phase change memory cells  
A method for programming a phase change memory cell is discussed. A phase change memory cell includes a memory element of a phase change material having a first state, in which the phase change...
7391639 Memory device and method for reading data  
A memory with memory cells, wherein a memory cell includes a resistive element and a switch, wherein the memory cells are connected with a common plate line and with respective bit lines, wherein...
7388775 Detecting switching of access elements of phase change memory cells  
A memory includes a storage element (OUM) made of a phase-change material for storing a logic value and an access element (OTS) switching from a higher resistance condition to a lower resistance...
7388771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states  
A method is described for operating a bistable resistance random access memory having two memory layer stacks that are aligned in series is disclosed. The bistable resistance random access memory...
7382647 Rectifying element for a crosspoint based memory array architecture  
An asymmetrically programmed memory material (such as a solid electrolyte material) is described for use as a rectifying element for driving symmetric or substantially symmetric resistive memory...
7382646 Memory architecture containing a high density memory array of semi-volatile or non-volatile memory elements  
An architecture, and its method of formation and operation, containing a high density memory array of semi-volatile or non-volatile memory elements, including, but not limited to, programmable...
7379328 Semiconductor device  
Memory blocks having memory cells which are comprised of vertical transistors and memory elements in which the resistance value is varied depending on the temperature imposed on the upper side...
7374174 Small electrode for resistance variable devices  
A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode....
7372726 Semiconductor memory  
A phase-change memory for employing chalcogenide as a recording medium is disclosed, which prevents the read disturbance from being generated, and reads data at high speed. In a phase-change memory...
7372725 Integrated circuit having resistive memory  
A memory device including a memory cell, a first circuit, and a second circuit. The memory cell includes phase-change material. The first circuit is configured to provide pulses to the phase-change...
7369431 Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor  
An initialization method of the present invention is a method for initializing a material (variable-resistance material) ( 2 ) whose resistance value increases/decreases according to the polarity...
7365355 Programmable matrix array with phase-change material  
A phase-change material is proposed for coupling interconnect lines an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer between...
7362608 Phase change memory fabricated using self-aligned processing  
A memory includes transistors in rows and columns providing an array, first conductive lines in columns across the array, and second conductive lines encapsulated by dielectric material in rows...
7359236 Read, write and erase circuit for programmable memory devices  
A circuit for writing, reading, and erasing a programmable device is disclosed. The programmable device includes an ion conductor and a plurality of electrodes. Electrical properties of the device...
7359231 Providing current for phase change memories  
A programmable current source for a phase change memory allows a single current source to controllably provide the current for reading and writing both set and reset bits. In addition, the current...
7359227 Shared address lines for crosspoint memory  
A crosspoint memory includes a shared address line. The shared address line may be coupled to cells above and below the address line in one embodiment. Voltage biasing may be utilized to select one...
7355879 Semiconductor integrated circuit, operating method thereof, and IC card including the circuit  
One main electrode of a TFT is connected with one terminal of a two-terminal type nonvolatile memory element, a gate electrode of the TFT is connected with a word line, and the other main electrode...
7352616 Phase change random access memory, boosting charge pump and method of generating write driving voltage  
A phase change random access memory on aspect includes a memory cell array block including a plurality of phase change memory cells, a column decoder, a row decoder, a column selector, and a write...
7349246 Initial firing method and phase change memory device for performing firing effectively  
In a firing method of a phase change memory device and a phase change memory capable of effectively performing a firing operation, the phase change memory device includes a plurality of memory cell...
7342817 System and method for writing data using an electron beam  
A system for writing data using an electron beam to change the structure of a small section of a storage medium and includes at least one focused electron beam source. The duration of a write cycle...
7339814 Phase change memory array having equalized resistance  
A memory includes memory cells, a first line coupled to the memory cells, and a second line coupled to the memory cells. A series resistance due of the first line plus the second line at each one...
7339185 Phase change memory device and method for forming the same  
A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed...
7336526 Semiconductor device  
To improve the reliability of the phase change element, unwanted current should not be flown into the element. Therefore, an object of the present invention is to provide a memory cell that stores...
7332735 Phase change memory cell and method of formation  
A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first...
7327623 Energy adjusted write pulses in phase-change memories  
A memory cell device that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are...
7327603 Memory device including electrical circuit configured to provide reversible bias across the PMC memory cell to perform erase and write functions  
Methods and apparatuses for programming a programmable metallization cell (PMC) memory cell are provided. A memory device includes a programmable metallization memory cell, a plate line connected...
7327602 Methods of accelerated life testing of programmable resistance memory elements  
A method of testing a programmable resistance memory element. The method includes applying a plurality of reset pulses to the memory element. Each of the reset pulses having an energy which is...
7324371 Method of writing to a phase change memory device  
A phase change memory has an array formed by a plurality of cells, each including a memory element of calcogenic material and a selection element connected in series to the memory element; a...
7324365 Phase change memory fabricated using self-aligned processing  
A memory includes transistors in rows and columns providing an array, conductive lines in columns across the array, and phase change elements contacting the conductive lines and self-aligned to the...
7323707 Initializing phase change memories  
A thin film phase change memory may be provided with a layer which changes between amorphous and crystalline states. The threshold voltage of that layer may be increased in a variety of fashions....
7321130 Thin film fuse phase change RAM and manufacturing method  
A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating...
7319608 Non-volatile content addressable memory using phase-change-material memory elements  
A non-volatile content addressable memory cell comprises: a first phase change material element, the first phase change material element having one end connected to a match-line; a first...
7315469 Control of set/reset pulse in response to peripheral temperature in PRAM device  
A drive circuit for a PRAM (phase-change random access memory) device includes a write driver that generates a set/reset current in response to a set/reset pulse. In addition, a temperature...
7315465 Methods of operating and forming chalcogenide glass constant current devices  
The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a...
7313016 Method of resetting phase change memory bits through a series of pulses of increasing amplitude  
A set bit in a phase change memory may be programmed to a reset bit using a series of pulses of increasing amplitude. An initial start pulse is applied. After the start pulse is applied, a check...
7308067 Read bias scheme for phase change memories  
A read bias scheme may be used for phase change memories including a chalcogenide access device and a chalcogenide memory element. Through an appropriate read bias scheme, desirable read margin can...
Matches 1 - 50 out of 293 1 2 3 4 5 6 >