Matches 1 - 50 out of 90 1 2 >
Match Document Document Title
7616476 Thin film magnetic memory device suitable for drive by battery  
After a digit line is charged to a power supply voltage by turn-on of a first switching element, the first switching element is turned off and a second switching element is turned on, whereby the...
7547661 Enhanced pinning in mixed rare earth-123 films  
An superconductive article and method of forming such an article is disclosed, the article including a substrate and a layer of a rare earth barium cuprate film upon the substrate, the rare earth...
7262987 SRAM cell using tunnel current loading devices  
An SRAM cell with gate tunneling load devices. The SRAM cell uses PFET wordline transistors and NFET cross-coupled transistors. The PFET wordline transistors are fully conductive during read...
7081774 Circuit having source follower and semiconductor device having the circuit  
When a potential of a power supply line varies according to a flowing current, the gate-source voltage Vgs of a transistor also varies, leading to variations in the constant current between each...
7068537 Magnetic device and method of making the same  
A method and magnetic device for improving the desirable properties of a magnetic device, e.g., magnetization uniformity and reproducibility. Moreover the invention provides magnetic cells that are...
7061796 Thin film magnetic memory device for programming required information with an element similar to a memory cell information programming method  
A program unit includes two program cells having an electric resistance varying according to a magnetization direction thereof. These program cells are magnetized in the same direction in initial...
7057941 Three-state memory cell  
A memory cell with at least two detectable states among which is an unprogrammed state, comprising, in series between two terminals of application of a read voltage, at least one first branch...
7031183 MRAM device integrated with other types of circuitry  
A magnetoresistive random access memory (MRAM) is embedded with another circuit type. Logic, such as a processing unit, is particularly well-suited circuit type for embedding with MRAM. The...
7009694 Indirect switching and sensing of phase change memory cells  
A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a...
6816406 Magnetic memory configuration  
A magnetic memory configuration stores data and avoids ageing effects. The memory configuration contains a cell array containing magnetic memory cells disposed along a first direction and a second...
6731535 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device includes a silicon substrate, bit lines, word lines, and memory cells. The bit line is positioned above the main surface of the silicon substrate and the...
6586787 Single electron device  
A single electron device. Fabricated from nanoparticle derivatives, particularly from Au and fullerene nanoparticle derivatives, the device reduces thermal fluctuation in the nanoparticle array and...
6573543 Reset apparatus, semiconductor IC apparatus, and semiconductor memory apparatus  
A reset device detects a rise of a supply voltage to start outputting a reset signal. The reset device includes a voltage detection circuit for detecting the supply voltage. The voltage detection...
6493259 Pulse write techniques for magneto-resistive memories  
A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the...
6487112 Single-electron memory  
A memory device in which each cell includes two portions of isolated-granular material: one portion forms the channel of a single-electron transistor, and the other provides a hysteretic I-V...
6426891 Nonvolatile memory with a two-terminal switching element and its driving method  
In nonvolatile memory capable of erasing, writing and reading data, simplified in structure of memory cells, and enabling high-density information recording, each memory cell is composed of a thin...
6078517 Superconducting memory cell with directly-coupled readout  
A superconducting cell (10) is provided which has a storage loop (12), a read-out loop (14), and a direct coupling element between the storage loop (12) and read-out loop (14). The direct coupling...
5930165 Fringe field superconducting system  
The instant invention is a switch, comprising: (1) a pathway of a superconductive material; and (2) a ferromagnet, where the ferromagnet is adapted for having at least a first magnetization state...
5912840 Memory cell architecture utilizing a transistor having a dual access gate  
A memory cell architecture utilizing a dual access gate and dual wordlines is disclosed. The cell is comprised of a first transistor connected between a digitline and a cellplate. The transistor is...
5852573 Polyload sram memory cell with low stanby current  
An SRAM cell formed on a semiconductor substrate with low standby current is disclosed. The memory cell includes a first inverter, a second inverter cross-coupled to the first inverter to form a...
5831897 SRAM memory cell design having complementary dual pass gates  
A memory cell in which data is written and read from a pass gate. The memory cell has a connection to a first pass gate, connecting the memory cell to a bit line. Additionally, the memory cell has...
5768177 Controlled delay circuit for use in synchronized semiconductor memory  
A controlled delay circuit for use in a synchronized semiconductor memory, comprises a reference delay, a delay circuit for controlling an internal circuit, and a comparing and adjusting circuitry...
5625589 Static memory cell with spaced apart conducting layers  
A memory cell comprises at least three conducting layers (20) spaced apart by insulating layers (10), a first voltage application means (24) for applying a predetermined voltage between first and...
5555208 Static random access memory  
In the static random access memory, load on a transistor having a gate and drain cross-connected, for example resistance or in general a pull-up element of TFT is reduced, thereby the manufacturing...
5491654 Static random access memory device having thin film transistor loads  
In a static random access memory device where thin film transistors are used memory cell loads, first and second semiconductor layers having source regions, channel regions and drain regions of the...
5438537 Static random access memory which has a pair of thin film transistors and wherein the capacitance and resistance between the gate electrodes and the conductor layers are increased so as to reduce the time constant between them  
A static random access memory of the thin film transistor load type which is enhanced in soft error resistance without involving an increase of the area of a cell is disclosed. A conductor layer is...
5426408 Ceramic superconducting magnet using stacked modules  
A superconducting magnet module comprises an alternate series of abutting and coaxially aligned first and second superconductive magnet modules. The first magnet module includes a first substrate...
5388068 Superconductor-semiconductor hybrid memory circuits with superconducting three-terminal switching devices  
Superconducting-semiconducting hybrid memories are disclosed. These superconducting-semiconducting hybrid memories utilize semiconductor circuits to store information, and either superconducting or...
5332722 Nonvolatile memory element composed of combined superconductor ring and MOSFET  
A novel nonvolatile memory element or cell comprising a memory means consisting of at least one superconducting ring (21, 22) and a detector means consisting of a MOSFET. The superconducting ring...
5287302 Superconducting optically reconfigurable magnetic device  
A superconducting optically reconfigurable device (SORD) wherein predetermined and optically achieved patterns of superconducting material generate Meissner effect magnetic flux to achieve control...
5276639 Superconductor magnetic memory cell and method for accessing the same  
A magnetic memory cell including an information storage unit of a three-layer structure having two magnetic thin films and a non-magnetic thin film interposed between the two thin films, an...
5145830 Method for manufacturing thin film oxide superconductors and superconductor devices by X-ray irradiation  
A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after...
5070070 High temperature superconducting memory storage device and cryotron  
Binary memory storage devices and cryotrons utilizing superconducting crystals exhibiting an onset of superconductivity and a relatively weak flux exclusion at a temperature T1 and the onset of...
5051787 Superconductor storage device and memory using superconductor storage devices as memory cells  
A superconductor storage device and a memory constructed by arranging a plurality of superconductor storage devices are disclosed. The superconductor storage device is comprised of a word line, a...
5039656 Superconductor magnetic memory using magnetic films  
This invention relates to a magnetic memory including a first superconductor wire, a second superconductor wire disposed in such a manner as to cross the first superconductor wire substantially...
5039655 Thin film memory device having superconductor keeper for eliminating magnetic domain creep  
A thin film magnetic array memory affords relatively high packing densities while avoiding the problem of magnetic domain creep through the use of thin films of superconducting material disposed on...
5011817 Magnetic memory using superconductor ring  
A noble unit cell structure in a magnetic memory is disclosed, in which a ferromagnetic film is sandwiched between first and second wires at a cross-over area, and third and fourth wires are...
4994434 Method of forming a barrier layer arrangement for conductive layers on silicon substrates  
A process is disclosed of producing on a crystalline silicon substrate a barrier layer triad capable of protecting a rare earth alkaline earth copper oxide conductive coating from direct...
4916663 Fast-access data storage circuit having a two-dimensional carrier gas  
This fast-access data storage circuit is made of a semiconductor material with a two-dimensional carrier gas between two of its layers. The material is rendered superconducting by a suitable choice...
3936809 Single flux quantum storage devices and sensing means therefor  
An information storage device which stores a single flux quantum without bias is disclosed. The device includes a single Josephson tunneling device made from two superconductive materials spaced...
3913120 Thin film resistors and contacts for circuitry  
Contacts and resistors are provided for circuitry which are very resistant to interdiffusion and which have good stability. In particular, contacts to superconductive circuitry and resistors for...
3512017 SUPERCONDUCTIVE SEMICONDUCTOR DEVICES  
3500356 FERROMAGNETIC-FILM MEMORY ELEMENTS WITH TWO FLUX CLOSURE ELEMENTS  
3491345 CRYOELECTRIC MEMORIES EMPLOYING LOOP CELLS  
3413055 Magneto-optic glass body and electric circuit element in read-out apparatus including the same  
3402400 Nondestructive readout of cryoelectric memories  
3384809 Controlled inductance device utilizing an apertured superconductive plane  
3383758 Cryogenic circuit fabrication  
3381283 Open flux memory with sensing plane  
3346829 Cryotron controlled storage cell  
Matches 1 - 50 out of 90 1 2 >