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7619431 |
High sensitivity magnetic built-in current sensor
A sensor for contactlessly detecting currents, has a sensor element having a magnetic tunnel junction (MTJ), and detection circuitry, the sensor element having a resistance which varies with the...
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7616478 |
Magnetic storage device
A magnetic storage device comprises an array of magnetic memory cells ( 50 ). Each cell ( 50 ) has, in electrical series connection, a magnetic tunnel junction (MTJ) ( 30 ) and a Zener diode ( 40...
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7616477 |
Non-volatile magnetic memory device
A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write...
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7616476 |
Thin film magnetic memory device suitable for drive by battery
After a digit line is charged to a power supply voltage by turn-on of a first switching element, the first switching element is turned off and a second switching element is turned on, whereby the...
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7616475 |
Memory element and memory
A memory element including a memory layer that retains information based on a magnetization state of a magnetic material is provided. In the memory element, a magnetization pinned layer is provided...
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7616474 |
Offset compensated sensing for magnetic random access memory
An offset compensated memory element voltage supply including a differential amplifier with a compensation circuit, and a transistor with a gate connected to the output of the differential...
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7613036 |
Memory element utilizing magnetization switching caused by spin accumulation and spin RAM device using the memory element
Provided is a spin memory that has excellent durability. The spin memory includes a ferromagnetic word line, a nonmagnetic bit line that crosses the ferromagnetic word line, a wiring disposed so as...
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7613035 |
Magnetic memory device and method of writing into the same
A magnetic memory device includes a memory cell including magnetoresistance effect elements MTJ 1 , MTJ 2 and a select transistor connected to the connection node of the magnetoresistance effect...
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7613034 |
Magnetic memory and method for reading-writing information from-to magnetic storage element
A magnetic memory is provided in which the margin between a write current and a read current can be reduced. A magnetic storage element includes: a first magnetic layer in which the direction of...
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7613033 |
Magnetic storage device
A magnetic storage device is provided which has significantly reduced power consumption. In the magnetic storage device, a yoke is arranged so as to circumferentially surround part of a line...
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7609563 |
Simultaneous read circuit for multiple memory cells
A memory device including a simultaneous read circuit design for multiple memory cells on a single interconnect using a fast fourier transform analysis circuit. The simultaneous read circuit can be...
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7609547 |
Biosensor and sensing cell array using the same
A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their...
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7609543 |
Method and implementation of stress test for MRAM
Voltage and current stress for magnetic random access memory (MRAM) cells can weed out potential early failure cells. Method and circuit implementation of such a stress test for a MRAM comprise...
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7606086 |
Nonvolatile semiconductor memory device
A nonvolatile semiconductor memory device comprises a memory cell array in which memory cells are arranged in a row and column direction, a circuit for applying a first voltage to a selected bit...
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7606065 |
Three-dimensional magnetic memory having bits transferrable between storage layers
Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be...
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7606063 |
Magnetic memory device
A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer...
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7605437 |
Spin-transfer MRAM structure and methods
A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet...
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7602637 |
Integrated circuits; methods for operating an integrating circuit; memory modules
Embodiments of the invention relate generally to integrated circuits, to methods for operating an integrating circuit, and to memory modules. In an embodiment of the invention, an integrated...
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7602636 |
Spin MOSFET
A spin MOSFET includes: a semiconductor substrate; a first magnetic film formed on the semiconductor substrate and including a first ferromagnetic layer, a magnetization direction of the first...
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7602033 |
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
A high performance TMR sensor is fabricated by employing a composite inner pinned (AP 1 ) layer in an AP 2 /Ru/AP 1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom...
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7602026 |
Memory cell, semiconductor memory device, and method of manufacturing the same
A memory cell in a semiconductor memory device comprises a variable resistor element configured so that a variable resistor body is sandwiched between a first electrode and a second electrode, and...
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7602000 |
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy...
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7599215 |
Magnetoresistive random access memory device with small-angle toggle write lines
Disclosed herein are toggle-mode magnetoresistive random access memory (MRAM) devices having small-angle toggle write lines, and related methods of toggle-mode switching MRAM devices. Also...
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7599210 |
Nonvolatile memory cell, storage device and nonvolatile logic circuit
One or serially connected field effect transistors are cross coupled with each other, first terminals of nonvolatile variable resistance elements are connected to their storage nodes, and the other...
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7599209 |
Memory circuit including a resistive memory element and method for operating such a memory circuit
The present invention relates to a memory circuit and method of operating the same. In at least one embodiment, the memory circuit includes a resistive memory element coupled to a plate potential...
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7598579 |
Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to <1×10 6 A/cm 2 is disclosed. The MTJ has a Co 60 Fe 20 B 20 /MgO/Co 60 Fe 20 B 20 configuration where...
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7598577 |
Magnetic memory device
A magnetic memory device comprises magneto-resistance elements each including a cylindrical fixed magnetization layer, an insulating film which covers an external surface of the fixed magnetization...
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7598555 |
MgO tunnel barriers and method of formation
MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg...
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7596045 |
Design structure for initializing reference cells of a toggle switched MRAM device
A design structure embodied in a machine readable medium used in a design process includes an apparatus for initializing a reference cell in a toggle switched MRAM device, with a first sense...
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7596018 |
Spin memory with write pulse
An electron spin-based memory cell has a first ferromagnetic layer with a changeable magnetization state and a second ferromagnetic layer with a fixed magnetization state. A non-volatile logic...
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7596017 |
Magnetic random access memory and method of reducing critical current of the same
A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer...
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7596015 |
Magnetoresistive element and magnetic memory
A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is...
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7596014 |
Semiconductor device
In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with...
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7595520 |
Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle...
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7593278 |
Memory element with thermoelectric pulse
A memory element comprises an addressable memory cell. A thermoelectric device couples to the memory cell. Electrical conductors provide a current pulse to the thermoelectric device. The current...
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7593254 |
Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
A variable resistance memory element and method of forming the same. The memory element includes a first electrode, a resistivity interfacial layer having a first surface coupled to said first...
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7593253 |
Semiconductor device
In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In...
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7593193 |
Magnetoresistive element and magnetic memory device
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second...
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7589994 |
Methods of writing data to magnetic random access memory devices with bit line and/or digit line magnetic layers
A magnetic random access memory (MRAM) device may include a substrate, a first magnetic layer on the substrate, and a digit line on the first magnetic layer. A magnetic tunnel junction structure...
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7588945 |
Multi-state thermally assisted storage
A process for manufacturing a random access memory cell, that is capable of storing multiple information states in a single physical bit, is described. The basic structure combines a conventional...
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7586781 |
Magneto-resistance effect element and magnetic memory device
The invention relates to a magneto-resistance effect element and a magnetic memory device. Lowering the magnetic domain wall movement current and drive at room temperature in a current induction...
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7586776 |
Nonvolatile memory devices having multi-filament variable resistivity memory cells therein
There is provided a resistive memory device, the device including: a plurality of word lines and a plurality of bit lines arranged such that the word lines intersect the bit lines; a plurality of...
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7583528 |
Magnetic memory device, method for writing into magnetic memory device and method for reading magnetic memory device
A magnetic memory device includes a first signal line (BL) and a second signal line (/BL) extended column-wise; a third signal line (WL) extended row-wise; a memory cell including a first...
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7583527 |
Tunable resistor and method for operating a tunable resistor
A tunable resistor includes a resistor input terminal, a resistor output terminal, and at least one current path connected between the resistor input terminal and the resistor output terminal. The...
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7583525 |
Method of driving storage device
A method of driving a storage device including a variable resistance element in which resistance value is changed reversibly between a high resistance state and a low resistance state by applying...
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7582941 |
Magnetic memory device and method of fabricating the same
A magnetic memory device includes a common line; a first write-in diode, a readout diode and a second write-in diode being connected to the common line in parallel. The magnetic memory device...
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7580276 |
Nonvolatile memory element
A nonvolatile memory element in which Rb 1-y Mb y MnO 3 having higher insulation properties than Ra 1-x Ma x MnO 3 is inserted between the Ra 1-x Ma x MnO 3 and a metal having a shallow work...
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7577044 |
Resistive memory element sensing using averaging
A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge...
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7577021 |
Spin transfer MRAM device with separated CPP assisted writing
A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a...
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7577020 |
System and method for reading multiple magnetic tunnel junctions with a single select transistor
A method for reading two or more magnetic tunnel junctions (MTJs) which are serially connected with a select transistor to form a memory string, the method comprises turning on the select...
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