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8183653 |
Magnetic tunnel junction having coherent tunneling structure
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a...
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8183654 |
Static magnetic field assisted resistive sense element
Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense...
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8184476 |
Random access memory architecture including midpoint reference
A random access memory architecture includes a first series connected pair of memory elements (202, 206, 302, 306, 402, 404) having a first resistance and a second series connected pair of memory...
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8183652 |
Non-volatile magnetic memory with low switching current and high thermal stability
A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer....
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8184470 |
Resistance change memory device and programming method thereof
A method of programming a resistance change memory device includes: applying program voltage pulses to a memory cell for programming a target resistance value; setting thermal relaxation times...
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8184410 |
Magnetoresistive element having free layer magnetic compound expressed by M1M2O
An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction...
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8184409 |
Magnetoresistive device with enhanced pinned layer
A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance...
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8179716 |
Non-volatile programmable logic gates and adders
Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output...
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8174875 |
Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
An integrated circuit memory device may include an integrated circuit substrate, and a multi-bit memory cell on the integrated circuit substrate. The multi-bit memory cell may be configured to...
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8174870 |
Magnetic recording element
A magnetic recording element is disclosed for which current density required for writing is low and structure of the element is simple. It comprises a ferromagnetic fine wire formed on a Si...
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8174873 |
Magnetic random access memory and initializing method for the same
A domain wall motion type MRAM has: a magnetic recording layer 10 having perpendicular magnetic anisotropy; and a pair of terminals 51 and 52 used for supplying a current to the magnetic recording...
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8174879 |
Biosensor and sensing cell array using the same
A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their...
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8174872 |
Nonvolatile latch circuit
A nonvolatile latch circuit includes: first and second inverters cross-coupled to hold 1-bit data; first and second magnetoresistive elements each having first to third terminals; and a current...
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8174874 |
Semiconductor memory device
According to one embodiment, a semiconductor memory device includes bit line pairs extending in a column direction, each of the bit line pairs includes a first bit line and a second bit line, and...
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8174871 |
Memory cell array
Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching...
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8169815 |
System and method for writing data to magnetoresistive random access memory cells
Magnetic random access memory (MRAM) cell with a thermally assisted switching writing procedure and methods for manufacturing and using same. The MRAM cell includes a magnetic tunnel junction that...
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8169817 |
Magnetoresistive device and magnetic random access memory
A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic...
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8169816 |
Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory
A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a...
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8169821 |
Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (SSTTMRAM)
A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a...
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8169818 |
Recording method for magnetic memory device
A recording method for a magnetic memory device that includes applying, when recording one piece of information, one or more main pulses and one or more sub-pulses in the same direction and...
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8163569 |
Magnetic memory devices and methods of forming the same
Provided are a magnetic memory device and a method of forming the same. The method may include forming a pinning pattern on a substrate; forming a first interlayer insulating layer that exposes the...
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8164147 |
Magnetic random access memory
A magnetic random access memory includes a first bit line and a second bit line, a source line formed for a group having the first bit line and the second bit line, adjacent to the first bit line,...
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8164946 |
Magnetic memory element, magnetic memory device, information recording/reproducing apparatus
A magnetic memory element includes a pair of electrodes, a junction layer, at least one carbon nanotube, and at least one nanowire. The at least one nanowire is made of a ferromagnetic material and...
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8164948 |
Spintronic devices with integrated transistors
The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and...
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8164947 |
Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion
A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic...
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8166234 |
Method of fabricating systems including heat-sensitive memory devices
A system code is stored in a first nonvolatile memory. The first nonvolatile memory and a second nonvolatile memory are heated during assembly of an electronic device including the first...
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8159872 |
Magnetic random access memory
An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first...
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8159866 |
Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer...
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8159870 |
Array structural design of magnetoresistive random access memory (MRAM) bit cells
Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cells are disclosed. The bit cells include a source line formed in a first plane and a bit line formed in a second plane....
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8159865 |
Information storage element and method of writing/reading information into/from information storage element
In a method of writing information into and reading information from an information storage element which includes a strip-shaped ferromagnetic material layer, a first electrode disposed at an end...
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8159855 |
Switchable element
A switchable element. The element includes a source electrode, a drain electrode, a conducting channel between the source electrode and the drain electrode, and a gate with multiferroic material...
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8159864 |
Data integrity preservation in spin transfer torque magnetoresistive random access memory
Systems, circuits and methods for controlling the word line voltage applied to word line transistors in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. One...
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8154905 |
Semiconductor memory device having a resistive memory element
A semiconductor memory according to an aspect of the invention including first and second bit lines, a word line, a resistive memory element which has one end and the other end, the one end being...
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8154903 |
Split path sensing circuit
A sensing circuit is disclosed. The sensing circuit includes a first path including a first resistive memory device and a second path including a reference resistive memory device. The first path...
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8154917 |
Magnetic storage device
A magnetic storage device includes a plurality of MRAM memory cells connected to a data transfer line, a clamp transistor connected between the data transfer line and a reading signal line and...
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8154914 |
Predictive thermal preconditioning and timing control for non-volatile memory cells
A method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a...
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8154915 |
Magnetoresistive element and magnetoresistive random access memory including the same
The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an...
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8154913 |
Magnetoresistance effect element and magnetic random access memory
A magnetoresistance effect element comprising: a first magnetization fixed layer whose magnetization direction is fixed; a first magnetization free layer whose magnetization direction is variable;...
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8154916 |
Nonvolatile memory circuit using spin MOS transistors
Certain embodiments provide a nonvolatile memory circuit in which a first p-channel MOS transistor and a first n-channel spin MOS transistor are connected in series, a second p-channel MOS...
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8149613 |
Resistance variable memory device
A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device...
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8149606 |
Semiconductor memory device
A semiconductor memory device comprises a semiconductor substrate; a plurality of memory cell arrays stacked on the semiconductor substrate, each memory cell array including a plurality of first...
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8149615 |
Magnetic random access memory
An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first...
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8149614 |
Magnetoresistive random access memory element and fabrication method thereof
A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer...
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8144509 |
Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size
Systems, circuits and methods for controlling write operations in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A reduced bit cell size is achieved by...
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8144504 |
Method of operating magnetic random access memory device
Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the...
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8144503 |
Information storage device and method of operating the same
An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are...
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8139395 |
Semiconductor memory device
There is provided a semiconductor memory device capable of suppressing writing disturbances without increasing the cell array area. A semiconductor memory device has a memory cell array where a...
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8139397 |
Spatial correlation of reference cells in resistive memory array
The present disclosure relates to methods of selectively placing a reference column or reference row in a memory array. The method includes measuring a resistance state resistance value for a...
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8139389 |
Programmable device
A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes...
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8140739 |
Flash memory based storage devices utilizing magnetoresistive random access memory (MRAM) to store files having logical block addresses stored in a write frequency file buffer table
A flash memory based storage device may utilize magnetoresistive random access memory (MRAM) as at least one of a device memory, a buffer, or high write volume storage. In some embodiments, a...
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