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7586776 Nonvolatile memory devices having multi-filament variable resistivity memory cells therein  
There is provided a resistive memory device, the device including: a plurality of word lines and a plurality of bit lines arranged such that the word lines intersect the bit lines; a plurality of...
7554111 Nanoparticle-polymer bistable devices  
A bistable electrical device employing a bistable polymer body made from an electrically insulating polymer material in which doped nanofibers are dispersed. The doped nanofibers are composed of an...
7518905 High density memory device  
This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10 15 bits/cm 3 ),...
7499309 Using organic semiconductor memory in conjunction with a MEMS actuator for an ultra high density memory  
A metal sulfide based non-volatile memory device is provided herein. The device is comprised of a substrate, a backplane, a planar memory media including a dense array of metal sulfide based memory...
7417247 Pentaarylcyclopentadienyl units as active units in resistive memory elements  
Polymers are described which exhibit a resistive hysteresis effect. The polymers include a polymer backbone to which pentaarylcyclopentadienyl radicals are bonded as side groups. A resistive memory...
7312100 In situ patterning of electrolyte for molecular information storage devices  
This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a method is provided that involves contacting a surface/electrode with a...
7309875 Nanocrystal protective layer for crossbar molecular electronic devices  
A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at...
7286387 Reducing the effect of write disturbs in polymer memories  
The write disturb that occurs in polymer memories may be reduced by writing back data after a read in a fashion which offsets any effect on the polarity of bits in bit lines associated with the...
7271407 Switchable circuit assemblies and semiconductor constructions  
The invention includes a switchable circuit device. The device comprises a first conductive layer and a porous silicon matrix over the first conductive layer. A material is dispersed within pores...
7269052 Device selection circuitry constructed with nanotube technology  
A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a...
7254053 Active programming and operation of a memory device  
Systems and methodologies for programming a memory cell having a functional or selective conductive layer are provided. The functional zone can include active, and/or passive and/or barrier layers....
7145794 Programmable microelectronic devices and methods of forming and programming same  
A microelectronic programmable structure and methods of forming and programming the structure. The programmable structure generally include an ion conductor and a plurality of electrodes....
7145793 Electrically addressable memory switch  
A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control...
7132675 Programmable conductor memory cell structure and method therefor  
In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to...
7120047 Device selection circuitry constructed with nanotube technology  
A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a...
7116573 Switching element method of driving switching element rewritable logic integrated circuit and memory  
A switching element has an ion conductor capable of conducting metal ions for use in an electrochemical reaction therein, a first electrode and a second electrode which are disposed in contact with...
7113420 Molecular memory cell  
A memory cell is provided with a pair of electrodes, and an active layer sandwiched between the electrodes and including a molecular system and ionic complexes distributed in the molecular system....
7088607 Static memory cell and SRAM device  
The objective of this invention is to provide a static memory cell and an SRAM device that can improve the write margin while preventing degradation of the static noise margin. By turning on/off...
7074519 Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device  
This invention provides a new design and fabrication for a three-dimensional crossbar architecture embedding a sub-micron or nanometer sized hole (called a molehole) in each cross-region. Each...
7061791 High density molecular memory device  
This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10 15 bits/cm 3 ),...
7050319 Memory architecture and method of manufacture and operation thereof  
An architecture, and its method of formation and operation, containing a high density memory array of semi-volatile or non-volatile memory elements, including, but not limited to, programmable...
7042755 High density non-volatile memory device  
This invention provides novel high density memory devices (FIG. 3 ) that are electrically addressable permitting effective reading and writing, that provide a high memory density (102), that...
7020355 Switchable surfaces  
A substrate having a surface with reversibly switchable properties. The surface comprises a nanolayer of a material that switches from a first conformation state to a second conformation state when...
7011984 Methods of forming switchable circuit devices  
The invention includes a switchable circuit device. The device comprises a first conductive layer and a porous silicon matrix over the first conductive layer. A material is dispersed within pores...
7006376 Tunable cantilever apparatus and method for making same  
Mass distribution within programmable surface control devices is controlled growing or dissolving an electrodeposition of metal and/or metal ions from a solid solution upon application of a...
7005237 Method of making information storage devices by molecular photolithography  
A photolithographic method of making an information storage device having different storage characteristics at a plurality of discrete memory locations thereon, comprises the steps of: (a)...
6998637 Circuit element having a first layer composed of an electrically insulating substrate material, a method for producing a circuit element, bispyridinium compounds and their use in circuit elements  
The circuit element has a first layer composed of an electrically insulating substrate material and a first electrically conductive material which is in the form of at least one discrete area such...
6985378 Programmable microelectronic device, structure, and system and method of forming the same  
A microelectronic programmable structure suitable for storing information and a method of forming and programming the structure are disclosed. The programmable structure generally includes an ion...
6972427 Switching device for reconfigurable interconnect and method for making the same  
A switching device to be reversibly switched between an electrically isolating off-state and an electrically conducting on-state for use in, e.g., a reconfigurable interconnect. The device includes...
6956231 Switchable circuit devices  
The invention includes a switchable circuit device. The device comprises a first conductive layer and a porous silicon matrix over the first conductive layer. A material is dispersed within pores...
6944047 Variable-persistence molecular memory devices and methods of operation thereof  
A molecular memory cell includes first and second electrodes. First and second charge storage molecules have respective first and second oxidation potentials and are disposed between the first and...
6940745 Programmable microelectronic devices and methods of forming and programming same  
A microelectronic programmable structure and methods of forming and programming the structure The programmable structure generally includes an ion conductor and a plurality of electrodes....
6922353 Memory for storing information  
A memory apparatus has a plurality of first electrodes and at least one second electrode separated by an electrolyte solution. Information may be recorded by causing an electrical current to flow...
6914802 Microelectronic photonic structure and device and method of forming the same  
A microelectronic photonic structure and a device and a system including the structure are disclosed. The photonic structure includes an ion conductor and a plurality of electrodes. Optical...
6899297 Missile fire control system  
The need in the art is addressed by the improved missile fire control system of the present invention. In the illustrative embodiment, the inventive system is adapted for use with TOW missile...
6891744 Configurable nanoscale crossbar electronic circuits made by electrochemical reaction  
Configurable electronic circuits comprise arrays of cross-points of one layer of metal/semiconductive nanoscale lines crossed by a second layer of metal/semiconductive nanoscale lines, with a...
6888155 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation  
A method of forming resistance changing elements with improved operational characteristics for use in memory devices and the resulting structures are disclosed. A chalcogenide glass having the...
6873541 Nonvolatile memory programmble by a heat induced chemical reaction  
A nonvolatile memory cell occupying a minimum chip area is provided with a cell structure that includes two or more base materials being programmable by a heat induced chemical reaction to form a...
6865117 Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same  
A circuit for programming a microelectronic device is disclosed. The circuit is configured to provide a reversible bias across the microelectronic device to perform erase and write functions. One...
6853478 Color display with molecular light valve  
A molecular light valve mechanism is used for imaging on an adjacent pixel-patterned construct. An electrical fringe field or through field is used to transform targeted pixels by switching light...
6847541 Information storage device, and information storage method and information regeneration method employing the information storage device  
An information storage device which has a layer containing such bistable molecules that the molecular structure reversibly changes due to an isomerization reaction, at least one reaction of the...
6643165 Electromechanical memory having cell selection circuitry constructed with nanotube technology  
A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a...
6642376 Rational synthesis of heteroleptic lanthanide sandwich coordination complexes  
A half-sandwich coordination complex, useful for the synthesis of triple-decker sandwich coordination compounds, is produced by reacting a precursor complex of the formula XM(R 1 ) 2 wherein X is...
6614048 Memory element with molecular or polymeric layers, memory cell, memory array, and smart card  
The memory cell or the memory array formed of such memory cells has different molecular or polymeric layers forming an electrochemical redox pair. A matrix acting as proton donors or acceptors is...
6487106 Programmable microelectronic devices and method of forming and programming same  
A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of...
6314019 Molecular-wire crossbar interconnect (MWCI) for signal routing and communications  
A molecular-wire crossbar interconnect for signal routing and communications between a first level and a second level in a molecular-wire crossbar is provided. The molecular wire crossbar comprises...
6212093 High-density non-volatile memory devices incorporating sandwich coordination compounds  
The present invention provides high density, non-volatile memory devices incorporating sandwich coordination compounds. Such molecules can have multiple different and distinguishable oxidation...
6128214 Molecular wire crossbar memory  
A molecular wire crossbar memory (MWCM) system is provided. The MWCM comprises a two-dimensional array of a plurality of nanometer-scale devices, each device comprising a junction formed by a pair...
6097627 Quantum random address memory with nano-diode mixer  
Quantum random address memory apparatus including a low dimensional plurality of address ports, a plurality of nano-memory elements, nano-diodes coupling the address ports to a high dimensional...
6084796 Programmable metallization cell structure and method of making same  
A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the...
Matches 1 - 50 out of 136 1 2 3 >