Matches 1 - 50 out of 172 1 2 3 4 >
Match Document Document Title
7612369 Memory device having a semiconducting polymer film  
A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first...
7606059 Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array  
A programmable resistance memory device includes a semiconductor substrate, at least one cell array, in which memory cells are arranged and formed above the semiconductor substrate. Each of the...
7605408 Apparatus, method and system for reconfigurable circuitry  
The present invention relates to reconfigurable circuitry, and more particularly to the reconfiguration of the characteristics of materials used in the formation of electronic circuitry as the...
7599213 Low surface energy coatings in probe recording  
An apparatus includes a storage media having a surface coated with a lubricant, and a plurality of probes having tips contacting the lubricant, wherein the probes are coated with one of a...
7593251 Memory cell comprising a molecular transistor, device comprising a plurality of such cells and method for using same  
The memory cell comprises a field effect memory transistor comprising a nanowire covered by a type of memory molecules and an access transistor of the same type. A source of the access transistor...
7583526 Random access memory including nanotube switching elements  
Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes...
7577078 Magnetic recording medium and apparatus and method for reading data from the magnetic recording medium using parallel and anti-parallel magnetization direction in separate magnetic layers  
A magnetic recording medium and an apparatus and a method for reading data using spin-dependent scattering of electrons are provided. The apparatus includes a probe, a magnetic recording medium, a...
7564708 Method of programming memory device  
In a memory device having first and second electrodes and active and passive layers between the electrodes, or a memory device having first and second electrodes and an insulating layer between and...
7558103 Magnetic switching element and signal processing device using the same  
A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control...
7558101 Scan sensing method that improves sensing margins  
Systems and methods for improving memory cell sensing margins by utilizing an optimal reference stimulus. A stimulus component applies a plurality of different reference stimuli to a plurality of...
7554111 Nanoparticle-polymer bistable devices  
A bistable electrical device employing a bistable polymer body made from an electrically insulating polymer material in which doped nanofibers are dispersed. The doped nanofibers are composed of an...
7550761 Switchable memory diode—a new memory device  
Systems and methodologies are provided for forming a diode component integral with a memory cell to facilitate programming arrays of memory cells created therefrom. Such a diode component can be...
7542334 Bistable latch circuit implemented with nanotube-based switching elements  
A nanotube-based switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in...
7535778 Semiconductor memory device with memory cells, each having bit registering layer in addition to a memory layer and method of driving the same  
The semiconductor memory device includes a memory layer having a plurality of memory cells for storing data, and at least one bit registering layer for recording status information on whether the...
7525833 Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers  
One embodiment of the present invention is a nanoscale shift register that can be used, in certain nanoscale and mixed-scale logic circuits, to distribute an input signal to individual nanowires of...
7518905 High density memory device  
This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10 15 bits/cm 3 ),...
7515490 Sensing circuit for organic memory  
An organic memory at least includes a number of select lines, a number of data lines, a bit cell array, and a number of digital sensing circuits. The bit cell array includes a number of bit cells,...
7508707 Semiconductor storage apparatus  
Disclosed is a semiconductor storage apparatus in which two sorts of memories, that is, a volatile memory and a non-volatile memory, are mounted on one chip. Data of a DRAM memory array are saved...
7508039 Carbon nanotube (CNT) multiplexers, circuits, and actuators  
Carbon nanotube (CNT) based devices include an actuator/switch that includes one or more fixed CNTs and a moveable CNT that can be urged toward or into contact with a selected fixed CNT with a...
7499316 Phase change memory devices and program methods  
A phase change memory device is disclosed. It includes a memory cell array including a plurality of memory cells programmed in relation to a phase change material, and a write driver circuit...
7499309 Using organic semiconductor memory in conjunction with a MEMS actuator for an ultra high density memory  
A metal sulfide based non-volatile memory device is provided herein. The device is comprised of a substrate, a backplane, a planar memory media including a dense array of metal sulfide based memory...
7495942 Nanoscale content-addressable memory  
A combined content addressable memory device and memory interface is provided. The combined device and interface includes one or more one molecular wire crossbar memories having spaced-apart key...
7492624 Method and device for demultiplexing a crossbar non-volatile memory  
A method and device demultiplex a crossbar non-volatile memory that includes a first array of row nano-wires and a second array of column nano-wires, which cross the row nano-wires at a plurality...
7471552 Analog phase change memory  
An analog memory may be formed using a phase change material. The phase change material may assume one of a number of resistance states which defines a specific analog characteristic to be stored.
7447055 Multiplexer interface to a nanoscale-crossbar  
Various embodiments of the present invention are directed to electronic means for reading the content of a nanowire-crossbar memory. In one embodiment of the present invention, a microscale or...
7408184 Functional molecular element and functional molecular device  
A functional molecular element whose functions can be controlled by an electric field based on a new principle. A Lewis base molecule ( 14 ) with positive permittivity anisotropy or a dipole moment...
7394687 Non-volatile-shadow latch using a nanotube switch  
A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage...
7382648 Nanomechanical switching device  
A nanomechanical device includes a nanostructure, such as a MWNT, located between two electrodes. The device switches from an OFF state to an ON state by extension of at least one inner shell of...
7379324 Storage device  
The present invention provides a storage device including a first electrode, a plurality of second electrodes arranged opposite the first electrode across a gap, and a particle which is selectively...
7362605 Nanoelectromechanical memory cells and data storage devices  
Nanoelectromechanical (NEM) memory cells are provided by anchoring a conductive nanometer-scale beam (e.g., a nanotube) to a base and allowing a portion of the beam to move. A charge containment...
7352617 Nano tube cell and memory device using the same  
A nano tube cell and a memory device using the same features a cross point cell using a capacitor and a PNPN nano tube switch to reduce the whole memory size. In the memory device, the unit nano...
7352608 Controllable nanomechanical memory element  
A memory device includes a mechanical element that exhibits distinct bistable states under amplitude modulation. The states are dynamically bistable or multi-stable with the application of a drive...
7352607 Non-volatile switching and memory devices using vertical nanotubes  
Non-volatile and radiation-hard switching and memory devices using vertical nano-tubes and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Methods of...
7345899 Memory having storage locations within a common volume of phase change material  
A memory includes a volume of phase change material, a first transistor coupled to the volume of phase change material for accessing a first storage location within the volume of phase change...
7339185 Phase change memory device and method for forming the same  
A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed...
7336524 Atomic probes and media for high density data storage  
A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact...
7336523 Memory device using nanotube cells  
A memory device using a nanotube cell comprises a plurality of nanotube sub-cell arrays each having a hierarchical bit line structure including a main bit line and a sub-bit line. In the memory...
7330369 NANO-electronic memory array  
Systems and methods are disclosed to process a semiconductor substrate by fabricating a first layer on the substrate using semiconductor fabrication techniques; fabricating a second layer above the...
7312100 In situ patterning of electrolyte for molecular information storage devices  
This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a method is provided that involves contacting a surface/electrode with a...
7307865 Integrated read-only memory, method for operating said read-only memory and corresponding production method  
An integrated read-only memory having select transistors, each of which has a drain connection and an electrode connection for feeding an electrical signal such as a voltage or a current. A layer...
7298645 Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure  
The present invention discloses a nano tube cell, and a semiconductor device having the nano tube cell and a double bit line sensing structure. The cell array circuit includes a plurality of top...
7289353 Systems and methods for adjusting programming thresholds of polymer memory cells  
Systems and methodologies are provided for adjusting threshold associated with a polymer memory cell's operation by applying thereupon a regulated electric field and/or voltage pulse width, during...
7286388 Resistive memory device with improved data retention  
In the present method of programming a memory device from an erased state, the memory device includes first and second electrodes, a passive layer between the first and second electrodes, and an...
7286387 Reducing the effect of write disturbs in polymer memories  
The write disturb that occurs in polymer memories may be reduced by writing back data after a read in a fashion which offsets any effect on the polarity of bits in bit lines associated with the...
7277314 Mobile ion memory  
An improved high-density digital storage device uses placement of mobile ions within a memory layer to record digital data. In an embodiment of the invention, the mobile ions comprise sodium ions...
7269052 Device selection circuitry constructed with nanotube technology  
A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a...
7262991 Nanotube- and nanocrystal-based non-volatile memory  
An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that...
7257016 Enhanced nanowire-crossbar latch array  
Various embodiments of the present invention are directed to a signal-storing nanowire-crossbar latch array. In one embodiment, the signal-storing nanowire-crossbar latch array is fabricated from...
7254053 Active programming and operation of a memory device  
Systems and methodologies for programming a memory cell having a functional or selective conductive layer are provided. The functional zone can include active, and/or passive and/or barrier layers....
7245520 Random access memory including nanotube switching elements  
A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a...
Matches 1 - 50 out of 172 1 2 3 4 >