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7630233 Semiconductor device and driving method of the same  
The invention provides a semiconductor device including a memory of a simple structure to provide an inexpensive semiconductor device and a driving method thereof. The semiconductor device of the...
7626859 Phase-change random access memory and programming method  
A programming method for a phase-change random access memory (PRAM) may be provided. The programming method may include determining an amorphous state of a chalcogenide material using programming...
7626858 Integrated circuit having a precharging circuit  
A memory includes a phase change element having a first side and a second side and a first line coupled to the first side of the element. The memory includes an access device coupled to the second...
7623370 Resistance change memory device  
A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and...
7622731 Cross-point memory array  
A circuit comprises a bulk silicon integrated circuit (IC). A first metallization layer is arranged adjacent to said bulk silicon IC. Phase change memory (PCM) is arranged adjacent to said first...
RE40995 Multi-element resistive memory  
A memory device , and methods relating thereto, having memory cells in which a single an access transistor controls the grounding of at least two storage resistive memory elements , such...
7619917 Memory cell with trigger element  
A memory device includes a plurality of word lines extending as rows and bit lines extending as columns. A memory cell is coupled between a word line and a bit line, wherein the memory cell...
7619915 Resistive random access memory device  
Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a...
7619936 System that prevents reduction in data retention  
One embodiment of the present invention provides a system including a tester and a back end manufacturing system. The tester tests a resistive memory and obtains configuration data for the...
7616472 Method and apparatus for non-volatile multi-bit memory  
A memory device that selectably exhibits first and second logic levels. A first conductive material has a first surface with a first memory layer formed thereon, and a second conductive material...
7616473 Devices and methods for controlling active termination resistors in a memory system  
A termination resistor is mounted on a memory circuit and provides a termination resistance for the memory circuit. The termination resistor includes a node, a plurality of first termination...
7616474 Offset compensated sensing for magnetic random access memory  
An offset compensated memory element voltage supply including a differential amplifier with a compensation circuit, and a transistor with a gate connected to the output of the differential...
7616515 Integrated electronic device having a low voltage electric supply  
An integrated electronic device includes at least one supply pin and at least one booster coupled to said at least one supply pin. Moreover, there is at least one integrated circuit powered by the...
7612360 Non-volatile memory devices having cell diodes  
An integrated circuit memory cell includes a substrate having a first semiconductor region of first conductivity type (e.g., N-type) therein, which may define a portion of a word line within the...
7612359 Microelectronic devices using sacrificial layers and structures fabricated by same  
A dielectric layer is formed on a region of a microelectronic substrate. A sacrificial layer is formed on the dielectric layer, and portions of the sacrificial layer and the dielectric layer are...
7613047 Efficient circuit and method to measure resistance thresholds  
The embodiments of the invention provide an apparatus, method, etc. for an efficient circuit and method to measure resistance. A sense line driver for an integrated circuit memory is provided,...
7613029 Phase change memory and method for driving the same  
A phase change memory has a first electrode formed over a substrate, a patterned phase change material layer formed over the first electrode to contact the first electrode and including a...
7613028 Solid electrolyte switching element  
A switching element for reversible switching between an electrically insulating OFF state and an electrically conductive ON state, having two electrodes, namely a reactive electrode and an inert...
7613033 Magnetic storage device  
A magnetic storage device is provided which has significantly reduced power consumption. In the magnetic storage device, a yoke is arranged so as to circumferentially surround part of a line...
7613037 Phase-change memory device and method of fabricating the same  
A phase-change memory device includes a semiconductor substrate, a bit line and a word line arranged on the semiconductor substrate to intersect each other, and a phase-change material strip...
7609543 Method and implementation of stress test for MRAM  
Voltage and current stress for magnetic random access memory (MRAM) cells can weed out potential early failure cells. Method and circuit implementation of such a stress test for a MRAM comprise...
7609545 Semiconductor device  
To improve the reliability of the phase change element, unwanted current should not be flown into the element. Therefore, an object of the present invention is to provide a memory cell that stores...
7609577 Design structure for improving sensing margin of electrically programmable fuses  
A design structure embodied in a machine readable medium used in a design process includes an apparatus for sensing the state of a programmable resistive memory element device, the apparatus...
7606059 Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array  
A programmable resistance memory device includes a semiconductor substrate, at least one cell array, in which memory cells are arranged and formed above the semiconductor substrate. Each of the...
7606064 Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device  
According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second...
7606056 Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured  
A process for manufacturing a phase change memory array includes the steps of: forming a plurality of phase change memory cells in an array region of a semiconductor wafer, the phase change memory...
7606086 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device comprises a memory cell array in which memory cells are arranged in a row and column direction, a circuit for applying a first voltage to a selected bit...
7606096 Semiconductor integrated circuit device  
A semiconductor integrated circuit device, has a first variable resistor element and a second variable resistor element whose resistances are changed complementarily depending on a current; and a...
7602632 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition  
A method for operating a memory cell. Memory cells represent binary values by storing a characteristic parameter. The method of memory cell operation entails receiving a binary value to be stored...
7602631 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition  
A memory array and computer program product for operating a memory cell and memory array. An embodiment of the invention entails receiving a binary value to be stored by a memory cell. A...
7602633 Non-volatile memory device, method of manufacturing the same, and method of operating the same  
A non-volatile memory device includes a substrate, resistance patterns, a gate dielectric layer, a gate electrode pattern, a first impurity region and a second impurity region. The substrate has...
7599209 Memory circuit including a resistive memory element and method for operating such a memory circuit  
The present invention relates to a memory circuit and method of operating the same. In at least one embodiment, the memory circuit includes a resistive memory element coupled to a plate potential...
7599210 Nonvolatile memory cell, storage device and nonvolatile logic circuit  
One or serially connected field effect transistors are cross coupled with each other, first terminals of nonvolatile variable resistance elements are connected to their storage nodes, and the other...
7599211 Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit  
According to one embodiment of the present invention, an integrated circuit includes a plurality of resistivity changing memory cells, and a plurality of conductive elements being electrically...
7599217 Memory cell device and manufacturing method  
A memory cell device, having a memory material switchable between electrical property states by the application of energy, comprises an electrode, a separation layer against an electrode surface, a...
7596016 Optically accessible phase change memory  
A phase change memory may be configured to enable both optical and electrical accessing of the memory. In one embodiment, each cell may be electrically accessed by a laser beam, and at the same...
7593255 Integrated circuit for programming a memory element  
An integrated circuit includes a resistance changing memory element and a circuit. The circuit is configured to program the memory element by iteratively applying a variable program pulse to the...
7586776 Nonvolatile memory devices having multi-filament variable resistivity memory cells therein  
There is provided a resistive memory device, the device including: a plurality of word lines and a plurality of bit lines arranged such that the word lines intersect the bit lines; a plurality of...
7586775 Nonvolatile memory device and related method of operation  
A nonvolatile memory device comprises a first voltage generation unit, a second voltage generation unit, a first circuit block, and a discharge unit. The first voltage generation unit generates a...
7586777 Resistance variable memory with temperature tolerant materials  
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb 2 Se 3 , and a metal-chalcogenide layer and methods of...
7586778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states  
A method is described for operating a bistable resistance random access memory having two memory layer stacks that are aligned in series is disclosed. The bistable resistance random access memory...
7583525 Method of driving storage device  
A method of driving a storage device including a variable resistance element in which resistance value is changed reversibly between a high resistance state and a low resistance state by applying...
7580275 Control of a memory matrix with resistance hysteresis elements  
A control circuit ( 1, 11 ) for a memory matrix is used that defines a write process that uses circuit state transitions between at least two idle circuit states, an all column update circuit state...
7579611 Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide  
A memory cell for use in integrated circuits comprises a chalcogenide feature and a transition metal oxide feature. Both the chalcogenide feature and transition metal oxide feature each have at...
7580277 Memory device including a programmable resistance element  
Disclosed are a phase change memory with improved retention characteristic of a phase change device, and a method for refreshing the phase change memory. The fact that a memory is a DRAM interface...
7580276 Nonvolatile memory element  
A nonvolatile memory element in which Rb 1-y Mb y MnO 3 having higher insulation properties than Ra 1-x Ma x MnO 3 is inserted between the Ra 1-x Ma x MnO 3 and a metal having a shallow work...
7580278 Variable resistance memory device  
A variable resistance memory device includes a memory cell array having a plurality of memory cells, a write driver which supplies a step-down set current to the memory cells, where the step-down...
7577024 Streaming mode programming in phase change memories  
A streaming programming mode may be implemented on user command in a phase change memory. In the streaming programming mode, accelerated programming may be achieved by ramping up to a voltage that...
7577044 Resistive memory element sensing using averaging  
A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge...
7577022 Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage  
An electric element includes: a first electrode ( 1 ); a second electrode ( 3 ); and a layer ( 2 ) connected between the first electrode and the second electrode and having a diode characteristic...
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