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7429002 |
Electrical device with stored data
The invention relates to an electrical device with a logic circuit and with a storage medium which is connected to the logic circuit and in which data are stored. The storage medium is provided...
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7410838 |
Fabrication methods for memory cells
A memory cell and a method of fabricating the same. A first conductive layer on a substrate is provided and a first type doped semiconductor layer is then formed on the first conductive layer. The...
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7397061 |
Lateral phase change memory
A lateral phase change cell may be formed over a semiconductor substrate. The lateral cell, in some embodiments, may be exposed to light so that the same cell may be addressed by both optical and...
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7391638 |
Memory device for protecting memory cells during programming
Improved circuitry and methods for programming memory cells of a memory device are disclosed. The improved circuitry and methods operate to protect the memory cells from potentially damaging...
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7379317 |
Method of programming, reading and erasing memory-diode in a memory-diode array
A memory array includes first and second sets of conductors and a plurality of memory-diodes, each connecting in a forward direction a conductor of the first set with a conductor of the second set....
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7376008 |
SCR matrix storage device
One of the simplest forms of data storage devices is the diode array storage device. However, a problem with diode array storage devices is that as the size of the array increases, the number of...
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7310266 |
Semiconductor device having memory cells implemented with bipolar-transistor-antifuses operating in a first and second mode
A DAC having a memory mat including a plurality of first memory cells, and a plurality of output lines connected to the plurality of first memory cells. Each of the plurality of memory cells has a...
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7310264 |
Rectifying charge storage memory circuit
A composite rectifying charge storage device, consisting of a rectifier and capacitor which share common elements, is provided in a memory circuit or memory cell. In one form, the memory cell is...
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7289349 |
Resistance variable memory element with threshold device and method of forming the same
A memory device having a memory portion connected in series with a threshold device between. The memory portion stores at least one bit of data based on at least two resistance states. The...
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7277313 |
Resistance variable memory element with threshold device and method of forming the same
A memory device having a memory portion connected in series with a threshold device between. The memory portion stores at least one bit of data based on at least two resistance states. The...
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7254053 |
Active programming and operation of a memory device
Systems and methodologies for programming a memory cell having a functional or selective conductive layer are provided. The functional zone can include active, and/or passive and/or barrier layers....
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7248518 |
Self-timed memory device providing adequate charging time for selected heaviest loading row
The invention includes an apparatus and method of selecting memory cells within a memory array. The method includes receiving a memory cell address. A column address and a row address are generated...
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7242607 |
Diode-based memory including floating-plate capacitor and its applications
Floating plate memory includes a diode as an access device, wherein the diode has four terminals, the first terminal serves as a word line, the second terminal serves as a storage node, the third...
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7218550 |
Magnetic storage device
A magnetic storage device comprises an array of magnetic memory cells ( 50 ). Each cell ( 50 ) has, in electrical series connection, a magnetic tunnel junction (MTJ) ( 30 ) and a Zener diode ( 40...
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7215564 |
Semiconductor memory component in cross-point architecture
A programmable metallization memory cell with a storage region ( 3 ) formed from a chalcogenide glass and an electrode ( 4 ) which is preferably silver is located at the crossing point of a...
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7209384 |
Planar capacitor memory cell and its applications
A capacitor memory is realized, wherein a capacitor stores data and a diode controls to store data “1” or “0”. Diode has four terminals wherein first terminal serves as word line, second...
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7196926 |
Vertical capacitor memory cell and its applications
A capacitor memory is realized, wherein a capacitor stores data and a diode controls to store data “1” or “0”. Diode has four terminals wherein first terminal serves as word line, second...
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7177181 |
Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
A memory array includes a sensing circuit for sensing bit line current while keeping the voltage of the selected bit line substantially unchanged. The word lines and bit lines are biased so that...
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7161167 |
Lateral phase change memory
A lateral phase change cell may be formed over a semiconductor substrate. The lateral cell, in some embodiments, may be exposed to light so that the same cell may be addressed by both optical and...
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7145255 |
Lateral programmable polysilicon structure incorporating polysilicon blocking diode
A programmable element includes a diode and a programmable structure formed in a polysilicon layer isolated from a semiconductor substrate by a dielectric layer. The diode includes a first region...
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7088613 |
Method for controlling current during read and program operations of programmable diode
A method for controlling current fluctuations during read and program operations in a memory structure is provided. The method includes applying a first voltage to a first gate of a word line...
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7042751 |
Method to produce data cell region and system region for semiconductor memory
The present invention relates to a memory and an information apparatus and more specifically realizes a memory having large capacity through a simplified process and an information apparatus...
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7031203 |
Floating-body DRAM using write word line for increased retention time
A DRAM memory cell uses a single transistor to perform the data storage and switching functions of a conventional cell. The transistor has a floating channel body which stores a potential that...
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7031185 |
Data storage device and method of forming the same
A resistive cross point memory cell array comprising a plurality of word lines, a plurality of bit lines, a plurality of cross points formed by the word lines and the bit lines, and a plurality of...
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7031182 |
Rectifying charge storage memory circuit
A composite rectifying charge storage device, consisting of a rectifier and capacitor which share common elements, is provided in a memory circuit or memory cell. In one form, the memory cell is...
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6995446 |
Isolating phase change memories with schottky diodes and guard rings
A phase change memory may be made using an isolation diode in the form of a Shottky diode between a memory cell and a word line. To reduce the leakage currents associated with the Shottky diode, a...
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6980457 |
Thyristor-based device having a reduced-resistance contact to a buried emitter region
A thyristor-based semiconductor device is formed having a thyristor, a pass device and an emitter region buried in a substrate and below at least one other vertically-arranged contiguous region of...
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6965522 |
Tunneling diode magnetic junction memory
A tunneling diode magnetic junction memory that eliminates the need for a separate semiconductor diode is disclosed. The diode is formed by an insulating layer that is located between a free...
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6958946 |
Memory storage device which regulates sense voltages
A memory storage device includes a memory cell configurable to have at least a first conductive state and includes a first and second conductor each electrically coupled to the memory cell. A...
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6943395 |
Phase random access memory with high density
A phase random access memory including a plurality of access transistors, each access transistor including a drain region, and a phase-changeable film shared by the plurality of access transistors....
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6940770 |
Method for precharging word and bit lines for selecting memory cells within a memory array
The invention includes an apparatus and method of selecting memory cells within a memory array. The method includes receiving a memory cell address. A column address and a row address are generated...
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6937509 |
Data storage device and method of forming the same
A resistive cross point memory cell array comprising a plurality of word lines, a plurality of bit lines, a plurality of cross points formed by the word lines and the bit lines, and a plurality of...
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6937495 |
Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
A memory array includes a sensing circuit for sensing bit line current while keeping the voltage of the selected bit line substantially unchanged. The word lines and bit lines are biased so that...
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6921912 |
Diode/superionic conductor/polymer memory structure
A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over...
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6909625 |
Method to produce data cell region and system region for semiconductor memory
The present invention relates to a memory and an information apparatus and more specifically realizes a memory having large capacity through a simplified process and an information apparatus...
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6903958 |
Method of writing to an organic memory
The invention relates to a memory, based on organic material and applied in combination with an organic integrated circuit (integrated plastic circuit). The invention particularly relates to a...
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6885573 |
Diode for use in MRAM devices and method of manufacture
A data storage device is disclosed that has a plurality of word lines, a plurality of bit lines, and a resistive crosspoint array of memory cells. Each memory cell is connected to a bit line and...
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6879508 |
Memory device array having a pair of magnetic bits sharing a common conductor line
A data storage device having parallel memory planes is disclosed. Each memory plane includes a first resistive cross point plane of memory cells, a second resistive cross point plane of memory...
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6813182 |
Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet
A donor/acceptor-organic-junction sheet employed within an electronic memory array of a cross-point diode memory. The donor/acceptor-organic-junction sheet is anistropic with respect to flow of...
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6778421 |
Memory device array having a pair of magnetic bits sharing a common conductor line
A magnetic random access memory (MRAM) device having parallel memory planes is disclosed. Each memory plane includes a first magneto-resistive cross point plane of memory cells, a second...
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6747301 |
Spin dependent tunneling barriers formed with a magnetic alloy
A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such...
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6707698 |
Dual memory cell
A memory cell has a first and second conductor. The first conductor is oriented in a first direction and the second conductor is oriented in a second direction. The first conductor has at least one...
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6690597 |
Multi-bit PROM memory cell
A memory cell comprises at least two antifuses in series with a diode. Each antifuse expresses a different resistance from the others when blown, and each requires an escalating programming voltage...
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6661704 |
Diode decoupled sensing method and apparatus
A method of and apparatus for connecting the sense current line in a cross-point memory array greatly reduces the effect of reverse leakage from unaddressed row or column lines. Separate sense line...
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6661691 |
Interconnection structure and methods
Interconnection structures for integrated circuits have a first array of cells, at least a second array of cells parallel to the first array, and interconnections disposed for connecting cells of...
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6653712 |
Three-dimensional memory array and method of fabrication
A multi-level memory array is described employing rail-stacks. The rail-stacks include a conductor and semiconductor layers. The rail-stacks are generally separated by an insulating layer used to...
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6639821 |
Memory circuit with memory elements overlying driver cells
A memory device includes an array of memory elements overlying a plurality of driver cells. Vias through an insulating layer connect the driver cells to the memory elements. The vias are...
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6631085 |
Three-dimensional memory array incorporating serial chain diode stack
A three-dimensional memory array includes a plurality of rail-stacks on each of several levels forming alternating levels of X-lines and Y-lines for the array. Memory cells are formed at the...
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6600640 |
Electromagnetic relay
The invention relates to an electromagnetic relay, comprising a magnetic system ( 6 ) with an exciting field coil (W R ), a core and an armature. Each load current circuit can be closed by a...
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6599796 |
Apparatus and fabrication process to reduce crosstalk in pirm memory array
A cross point memory array is fabricated on a substrate with a plurality of memory cells, each memory cell including a diode and an anti-fuse in series. First and second conducting materials are...
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