Patents in Class 365/105

Matches 1 - 50 out of 187

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Match	Document	Document Title
1	7593249	Memory device for protecting memory cells during programming Improved circuitry and methods for programming memory cells of a memory device are disclosed. The improved circuitry and methods operate to protect the memory cells from potentially damaging...
2	7589989	Method for protecting memory cells during programming Improved circuitry and methods operate to protect the memory cells from potentially damaging electrical energy that can be imposed during programming of the memory cells. Additionally, the improved...
3	7586773	Large array of upward pointing p-i-n diodes having large and uniform current An upward-pointing p-i-n diode formed of deposited silicon, germanium, or silicon-germanium is disclosed. The diode has a bottom heavily doped p-type region, a middle intrinsic or lightly doped...
4	7573077	Thyristor-based semiconductor memory device with back-gate bias In accordance with an embodiment of the present invention, a thyristor-based semiconductor memory device may comprise an array of thyristor-based memory formed in an SOI wafer. A supporting...
5	7545019	Integrated circuit including logic portion and memory portion An integrated circuit includes a logic portion including M conductive layers, a memory portion including N conductive layers, and at least one common top conductive layer over the logic portion and...
6	7518900	Memory A memory capable of reducing the memory cell size is provided. This memory includes a plurality of memory cells including diodes, a plurality of bit lines and a first conductive type first impurity...
7	7489535	Circuit configurations and methods for manufacturing five-volt one time programmable (OTP) memory arrays This invention discloses a circuit trimming system that includes a one-time programmable memory (OTP). The OTP further includes a forward biased trim device connected between a voltage supply Vcc...
8	7474548	Semiconductor memory device and method for manufacturing the same A semiconductor memory device includes: a memory cell array region formed in a semiconductor region of a first conductivity type and having a plurality of memory cells arranged in rows and columns;...
9	7466586	Diode-based capacitor memory and its applications Diode-based capacitor memory uses relatively small capacitor, and uses a diode as an access device instead of MOS transistor, wherein the diode has four terminals, the first terminal is connected...
10	7436704	Non-volatile memory devices and method thereof Non-volatile memory devices and a method thereof are provided. A non-volatile memory device according to an example embodiment of the present invention may include a first transistor including a...
11	7429002	Electrical device with stored data The invention relates to an electrical device with a logic circuit and with a storage medium which is connected to the logic circuit and in which data are stored. The storage medium is provided...
12	7410838	Fabrication methods for memory cells A memory cell and a method of fabricating the same. A first conductive layer on a substrate is provided and a first type doped semiconductor layer is then formed on the first conductive layer. The...
13	7391638	Memory device for protecting memory cells during programming Improved circuitry and methods for programming memory cells of a memory device are disclosed. The improved circuitry and methods operate to protect the memory cells from potentially damaging...
14	7379317	Method of programming, reading and erasing memory-diode in a memory-diode array A memory array includes first and second sets of conductors and a plurality of memory-diodes, each connecting in a forward direction a conductor of the first set with a conductor of the second set....
15	7376008	SCR matrix storage device One of the simplest forms of data storage devices is the diode array storage device. However, a problem with diode array storage devices is that as the size of the array increases, the number of...
16	7310266	Semiconductor device having memory cells implemented with bipolar-transistor-antifuses operating in a first and second mode A DAC having a memory mat including a plurality of first memory cells, and a plurality of output lines connected to the plurality of first memory cells. Each of the plurality of memory cells has a...
17	7310264	Rectifying charge storage memory circuit A composite rectifying charge storage device, consisting of a rectifier and capacitor which share common elements, is provided in a memory circuit or memory cell. In one form, the memory cell is...
18	7289349	Resistance variable memory element with threshold device and method of forming the same A memory device having a memory portion connected in series with a threshold device between. The memory portion stores at least one bit of data based on at least two resistance states. The...
19	7254053	Active programming and operation of a memory device Systems and methodologies for programming a memory cell having a functional or selective conductive layer are provided. The functional zone can include active, and/or passive and/or barrier layers....
20	7248518	Self-timed memory device providing adequate charging time for selected heaviest loading row The invention includes an apparatus and method of selecting memory cells within a memory array. The method includes receiving a memory cell address. A column address and a row address are generated...
21	7242607	Diode-based memory including floating-plate capacitor and its applications Floating plate memory includes a diode as an access device, wherein the diode has four terminals, the first terminal serves as a word line, the second terminal serves as a storage node, the third...
22	7218550	Magnetic storage device A magnetic storage device comprises an array of magnetic memory cells ( 50 ). Each cell ( 50 ) has, in electrical series connection, a magnetic tunnel junction (MTJ) ( 30 ) and a Zener diode ( 40...
23	7215564	Semiconductor memory component in cross-point architecture A programmable metallization memory cell with a storage region ( 3 ) formed from a chalcogenide glass and an electrode ( 4 ) which is preferably silver is located at the crossing point of a...
24	7209384	Planar capacitor memory cell and its applications A capacitor memory is realized, wherein a capacitor stores data and a diode controls to store data “1” or “0”. Diode has four terminals wherein first terminal serves as word line, second...
25	7196926	Vertical capacitor memory cell and its applications A capacitor memory is realized, wherein a capacitor stores data and a diode controls to store data “1” or “0”. Diode has four terminals wherein first terminal serves as word line, second...
26	7161167	Lateral phase change memory A lateral phase change cell may be formed over a semiconductor substrate. The lateral cell, in some embodiments, may be exposed to light so that the same cell may be addressed by both optical and...
27	7088613	Method for controlling current during read and program operations of programmable diode A method for controlling current fluctuations during read and program operations in a memory structure is provided. The method includes applying a first voltage to a first gate of a word line...
28	7042751	Method to produce data cell region and system region for semiconductor memory The present invention relates to a memory and an information apparatus and more specifically realizes a memory having large capacity through a simplified process and an information apparatus...
29	7031203	Floating-body DRAM using write word line for increased retention time A DRAM memory cell uses a single transistor to perform the data storage and switching functions of a conventional cell. The transistor has a floating channel body which stores a potential that...
30	7031185	Data storage device and method of forming the same A resistive cross point memory cell array comprising a plurality of word lines, a plurality of bit lines, a plurality of cross points formed by the word lines and the bit lines, and a plurality of...
31	6995446	Isolating phase change memories with schottky diodes and guard rings A phase change memory may be made using an isolation diode in the form of a Shottky diode between a memory cell and a word line. To reduce the leakage currents associated with the Shottky diode, a...
32	6980457	Thyristor-based device having a reduced-resistance contact to a buried emitter region A thyristor-based semiconductor device is formed having a thyristor, a pass device and an emitter region buried in a substrate and below at least one other vertically-arranged contiguous region of...
33	6965522	Tunneling diode magnetic junction memory A tunneling diode magnetic junction memory that eliminates the need for a separate semiconductor diode is disclosed. The diode is formed by an insulating layer that is located between a free...
34	6958946	Memory storage device which regulates sense voltages A memory storage device includes a memory cell configurable to have at least a first conductive state and includes a first and second conductor each electrically coupled to the memory cell. A...
35	6943395	Phase random access memory with high density A phase random access memory including a plurality of access transistors, each access transistor including a drain region, and a phase-changeable film shared by the plurality of access transistors....
36	6940770	Method for precharging word and bit lines for selecting memory cells within a memory array The invention includes an apparatus and method of selecting memory cells within a memory array. The method includes receiving a memory cell address. A column address and a row address are generated...
37	6903958	Method of writing to an organic memory The invention relates to a memory, based on organic material and applied in combination with an organic integrated circuit (integrated plastic circuit). The invention particularly relates to a...
38	6885573	Diode for use in MRAM devices and method of manufacture A data storage device is disclosed that has a plurality of word lines, a plurality of bit lines, and a resistive crosspoint array of memory cells. Each memory cell is connected to a bit line and...
39	6879508	Memory device array having a pair of magnetic bits sharing a common conductor line A data storage device having parallel memory planes is disclosed. Each memory plane includes a first resistive cross point plane of memory cells, a second resistive cross point plane of memory...
40	6813182	Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet A donor/acceptor-organic-junction sheet employed within an electronic memory array of a cross-point diode memory. The donor/acceptor-organic-junction sheet is anistropic with respect to flow of...
41	6747301	Spin dependent tunneling barriers formed with a magnetic alloy A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such...
42	6707698	Dual memory cell A memory cell has a first and second conductor. The first conductor is oriented in a first direction and the second conductor is oriented in a second direction. The first conductor has at least one...
43	6690597	Multi-bit PROM memory cell A memory cell comprises at least two antifuses in series with a diode. Each antifuse expresses a different resistance from the others when blown, and each requires an escalating programming voltage...
44	6661704	Diode decoupled sensing method and apparatus A method of and apparatus for connecting the sense current line in a cross-point memory array greatly reduces the effect of reverse leakage from unaddressed row or column lines. Separate sense line...
45	6661691	Interconnection structure and methods Interconnection structures for integrated circuits have a first array of cells, at least a second array of cells parallel to the first array, and interconnections disposed for connecting cells of...
46	6653712	Three-dimensional memory array and method of fabrication A multi-level memory array is described employing rail-stacks. The rail-stacks include a conductor and semiconductor layers. The rail-stacks are generally separated by an insulating layer used to...
47	6639821	Memory circuit with memory elements overlying driver cells A memory device includes an array of memory elements overlying a plurality of driver cells. Vias through an insulating layer connect the driver cells to the memory elements. The vias are...
48	6600640	Electromagnetic relay The invention relates to an electromagnetic relay, comprising a magnetic system ( 6 ) with an exciting field coil (W R ), a core and an armature. Each load current circuit can be closed by a...
49	6599796	Apparatus and fabrication process to reduce crosstalk in pirm memory array A cross point memory array is fabricated on a substrate with a plurality of memory cells, each memory cell including a diode and an anti-fuse in series. First and second conducting materials are...
50	6587394	Programmable address logic for solid state diode-based memory A level of a solid state memory device includes main memory and address logic. The address logic includes first and second groups of address elements. Current-carrying capability of the first group...

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