Matches 101 - 150 out of 189 < 1 2 3 4 >
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4805141 Bipolar PROM having transistors with reduced base widths  
A semiconductor device having a vertical transistor consisting of a semiconductor substrate, a first semiconductor region, and a second semiconductor region operatively functioning as a collector,...
4800529 Semiconductive memory device with current control and comparison means to reduce power consumption and increase operating speed  
A memory device comprises an access circuit for setting a selected one of word lines to a low (or high) level responsive to a row address and for setting a selected one of bit lines to a high (or...
4792833 Junction-shorting type semiconductor read-only memory having increased speed and increased integration density  
In a junction-shorting type PROM, including transistors, a highly doped region having the same conductivity type as a base is provided between a pair of memory cells. This region is a base contact...
4791496 System for presenting audiovisual information to an audience  
With an audiovisual information presentation system, pictorial image data, drawn on paper sheets in advance and to be optically projected on a screen using an optical projector, is sequentially...
4734886 Auxiliary word line driver for effectively controlling programmability of fusible links  
The problem of the distributed voltage drop along a resistive word line through which fusible elements of a circuit array are selectively programmed to a state of high resistance (effective open...
4727409 Programmable read-only memory formed with opposing PN diodes  
A semiconductor PROM contains a group of PROM cells (12) each consisting of a pair of opposing diodes oriented vertically with their common intermediate region (22 and 24) fully adjoining a...
4722822 Column-current multiplexing driver circuit for high density proms  
Current switches are used to control current into the columns during READ operations of a PROM. The circuit provides one such switch for each of the columns of the PROM and makes possible the use...
4719599 Programmable read-only memory device provided with test cells  
A programmable read-only memory device of a junction destruction type is provided with a test circuit for the purpose of detecting a parasitic thyristor effect which may occur in the data...
4698790 Programmable read only memory adaptive row driver circuit  
An I 2 L programmable read only memory (PROM) row driver circuit sinks current from a row of memory elements when selectively activated. The circuit operates in the read mode at very low power...
4689654 Logic array chip  
A programmable logic array chip is provided with an auxiliary grid pattern of conductive paths. Connecting elements can be selectively activated to connect certain ones of the auxiliary paths to...
4679085 Digital integrated electronic storage system for video and audio playback  
An apparatus for displaying in real-time a previously recorded video sequence includes a main memory wherein digitized video gray-scale information is stored for selected non-interlaced fields of...
4672576 Programmable read only memory output circuit  
An I 2 L programmable read only memory (PROM) output circuit has a selectable dual non-inverting input differential amplifier with each non-inverting input connected to a different column of...
4661927 Integrated Schottky logic read only memory  
An integrated Schottky logic (ISL) read only memory (ROM) uses ISL drivers and decoders connected to wordlines and data bitlines. The pattern of data stored in the ISL is determined by Schottky...
4646427 Method of electrically adjusting the zener knee of a lateral polysilicon zener diode  
In a method of electrically altering the characteristics of a semiconductor device, a lateral polysilicon zener diode's zener knee voltage may be shifted either to a higher or lower voltage. An...
4646266 Programmable semiconductor structures and methods for using the same  
A solid state semiconductor device is disclosed which is programmable so as to alter the impedance between its two terminals. In many embodiments, the device is programmable to have any one of four...
4608672 Semiconductor memory  
An electronic device is provided which includes first and second memory arrays, each capable of storing data at locations therein, and an address decoder positioned between the first and second...
4598386 Reduced-area, read-only memory  
A reduced-area, read-only memory, including a programmable read-only memory, accomplished with a first step of removing one word address line from the word decoder input and one bit address line...
4569120 Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation  
In fabricating a PROM cell, an electrical isolation mechanism (44 and 32) is formed in a semiconductive body to separate islands of an upper zone (36) of first type conductivity (N) in the body. A...
4569121 Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer  
In fabricating a PROM cell, an electrical isolation mechanism (44 and 32) is formed in a semiconductive body to separate islands of an upper zone (36) of first type conductivity (N) in the body. A...
4538167 Shorted junction type programmable read only memory semiconductor devices  
The semiconductor device relates to a shorted junction type programmable read only memory semiconductor device. The memory consists of a semiconductor region including a PN junction or a Schottky...
4516223 High density bipolar ROM having a lateral PN diode as a matrix element and method of fabrication  
A bipolar ROM having a polysilicon PN junction diode as the matrix element for each bit of storage, wherein the diode is constructed laterally to the associated word line of the array. The word...
4510704 Boot or shoe incorporating pedometer or the like  
A boot or shoe incorporating means (12) for detecting when a step is made, and means (5) for recording and displaying the total of the steps so recorded. The means (5) may be a mechanical counter...
4494135 Programmable read only memory cell having an electrically destructible programmation element integrally formed with a junction diode  
A programmable read-only memory includes a number of programmable memory cells, each of which is formed in a thin layer of semiconductor material which extends on an insulating layer of a...
4488261 Field programmable device  
A field programmable device comprises a plurality of word lines, a plurality of bit lines which are disposed in a manner to intersect the word lines, a plurality of cells which are respectively...
4480318 Method of programming of junction-programmable read-only memories  
A method of programming a cell in a PROM, wherein the cell comprises a bipolar transistor having a floating base, comprises applying a current rising with time across the emitter to collector...
4462088 Array design using a four state cell for double density  
A bipolar ROM (read only memory) or ROS (read only storage) system in which the array devices embody four different, two-terminal, device forms: low barrier Schottky diodes; standard or high...
4442507 Electrically programmable read-only memory stacked above a semiconductor substrate  
In the disclosed memory, address decode means are integrated into a surface of a substrate, for addressing cells in the memory; an insulating layer covers the address decode means and the...
4428066 Semiconductor read only memory  
A semiconductor fused programmable read only memory having a fuse resistor formed on an insulator film of the surface of a substrate. An island region having a conductivity opposite to that of the...
4424579 Mask programmable read-only memory stacked above a semiconductor substrate  
In the disclosed read-only memory, address decode means for addressing information in the memory lie in a semiconductor substrate; an insulating layer covers the address decode means; an array of...
4423432 Apparatus for decoding multiple input lines  
Apparatus for decoding multiple input lines includes a line selector and a line deselector. The line selector is capable of receiving a plurality of closely spaced input lines and simultaneously...
4420820 Programmable read-only memory  
A semiconductor memory cell for a programmable read-only memory includes a polysilicon layer formed with laterally spaced surface regions which differ in impurity concentration and which form two...
4419741 Read only memory (ROM) having high density memory array with on pitch decoder circuitry  
The ROM utilizes a diode x-y memory array which can be comprised of a number of suitable materials which form rectifying junctions. The diodes are formed vertically in order to provide a very high...
4412308 Programmable bipolar structures  
A switchable bipolar structure, suitable for use in a programmable read only memory, is provided which includes a rectifying contact disposed on a N type semiconductor substrate with a P type...
4399450 ROM With poly-Si to mono-Si diodes  
In a diode matrix of a permanent memory (ROM) the word line and bit line system is formed by a system of strip-shaped zones of one conductivity type provided in the silicon body and in the another...
4388703 Memory device  
A memory device is provided for an integrated injection logic (I 2 L) device in solid state form by a resistor connected at one end to the logic device, and a diode having its cathode connected to...
4385368 Programmable read only memory  
A programmable read-only memory (PROM) circuit is provided wherein each one of a plurality of fusible links is coupled between a different row and column conductor of a matrix of row and column...
4373165 Very high density punch-through read-only-memory  
A semiconductor read-only-memory (ROM) device having an array of punch-through devices as memory cells. The cells are formed at the crossing points of two pluralities of parallel elongated regions,...
4347585 Reproduce only storage matrix  
This matrix has high barrier Schottky diodes at Read or Reproduce Only Storage (ROS) matrix crossovers to represent 1's (the absence of diodes representing 0's) and low barrier Schottky diodes...
4312046 Vertical fuse and method of fabrication  
In a memory array wherein each cell includes an emitter follower, a diode is formed on the emitter by a thin layer which is capable of being shorted by vertical migration of bit line atoms through...
4288863 Programmable semiconductor memory cell  
A programmable non-volatile semiconductor memory cell consisting of an n-channel insulated gate field effect transistor comprising a gate electrode which is floating with respect to potential, and...
4254427 Semiconductor device having a compact read-only memory  
A read-only memory in which each memory cell is formed by two back-to-back diodes across which a connection can be formed by means of punch-through. Since cross-talk between adjacent cells is...
4233671 Read only memory and integrated circuit and method of programming by laser means  
A programmable read only memory (PROM) includes a first plurality of conductive lines, a second plurality of conductive lines and polycrystalline silicon material therebetween. At the crossing...
4229757 Programmable memory cell having semiconductor diodes  
Integrated electrically programmable read only memory cell having at least two back-to-back diodes. A first diode is formed by a planar junction (7) between two superimposed regions (2, 6), the...
4208727 Semiconductor read only memory using MOS diodes  
A semiconductor integrated circuit functioning as a read only memory or ROM employs MOS diodes as the memory cells and is formed by a process compatible with standard N-channel silicon gate...
4195354 Semiconductor matrix for integrated read-only storage  
A semiconductor matrix for an integrated read-only storage is disclosed which comprises a plurality of components each of which is provided with a semiconductor region of a first type conductivity,...
4174521 PROM electrically written by solid phase epitaxy  
A memory cell, having a doped amorphous silicon layer, is formed on a thin layer of silicon alloy which is on a single crystal silicon substrate. The cell is programmed by applying a voltage...
4167791 Non-volatile information storage arrays of cryogenic pin diodes  
A semiconductor memory device exhibiting non-volatile storage characteristics is disclosed. The device comprises a storage element, maintained in a prescribed range of temperatures, which exhibits...
4130889 Programmable write-once, read-only semiconductor memory array using SCR current sink and current source devices  
This disclosure relates to a programmable write-once, read-only semiconductor memory array which has an improved current source for each bit line and an improved current sink for each Word line....
4130891 Methods of gray scale recording and archival memory target produced thereby  
One of a multiplicity of data values is permanently recorded at each data site in a two-dimensional data site array defined upon the surface of a semiconductor diode target by implanting an...
4099260 Bipolar read-only-memory unit having self-isolating bit-lines  
A semiconductor read-only-memory (ROM) unit fabricated in large-scale-integrated form utilizing the formation of self-isolating bit-line surface regions of one conductivity type directly in a bulk...
Matches 101 - 150 out of 189 < 1 2 3 4 >