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7613029 Phase change memory and method for driving the same  
A phase change memory has a first electrode formed over a substrate, a patterned phase change material layer formed over the first electrode to contact the first electrode and including a...
7613028 Solid electrolyte switching element  
A switching element for reversible switching between an electrically insulating OFF state and an electrically conductive ON state, having two electrodes, namely a reactive electrode and an inert...
7569909 Phase change memory devices and methods for manufacturing the same  
Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device comprises a substrate. A dielectric layer is formed over the...
7561460 Resistive memory arrangement  
Provided is a resistive memory arrangement having a cell array structured in rows and columns and having resistive memory cells connected to a drive element for driving. Each drive element is...
7551476 Resistive memory having shunted memory cells  
A memory includes a bit line and a plurality of resistive memory cells coupled to the bit line. Each resistive memory cell is programmable to each of at least three resistance states. The memory...
7548449 Magnetic memory device and methods thereof  
A magnetic memory device and methods thereof are provided. The example magnetic memory device may include a transistor disposed within a given unit cell region and a magnetic tunneling junction...
7539040 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor memory device comprises a memory cell including a variable resistance element changing its electric resistance by voltage application and having current-voltage...
7532497 Nonvolatile semiconductor memory device and method of writing into the same  
In a method of writing into a nonvolatile semiconductor memory device including a resistance memory element which memorizes a high resistance state and a low resistance state and switches between...
7529116 Memory device having a threshold voltage switching device and a method for storing information in the memory device  
Disclosed herein is a memory device having an increased level of integration with a simplified method of manufacture. The memory device includes: a plurality of word lines and a plurality of bit...
7522444 Memory circuit, method for operating a memory circuit, memory device and method for producing a memory device  
The present invention is related to a memory circuit comprising: a resistive memory element comprising a programmable metallization cell, a bit line, a selection transistor operable to address the...
7515455 High density memory array for low power application  
A memory device includes a first bit line in a first conducting layer and a second bit line parallel to the first bit line. The second bit line is in a second conducting layer. The memory device...
7511982 High speed OTP sensing scheme  
A high speed sensing scheme for a non-volatile memory array is disclosed. The memory array includes non volatile memory cells arranged in a complementary bitline configuration includes precharge...
7511981 Non-volatile memory device  
A non-volatile memory device according to one embodiment comprises a plurality of memory cells each comprising a magneto resistive element and a selection transistor; wherein at least some of the...
7508695 Nonvolatile semiconductor memory device and data writing method  
A data writing method for writing data sequentially in a cross-point memory cell array having a variable resistive element whose electric resistance is changed by application of an electric stress...
7502252 Nonvolatile semiconductor memory device and phase change memory device  
For the purpose of providing a phase change memory device advantageous in layout and operation control by obtaining sufficient write current for high integrated phase change memory devices, the...
7495296 Semiconductor integrated circuit device  
The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to...
7486536 Phase-changeable memory device and method of programming the same  
Disclosed is a phase-changeable memory device and method of programming the same. The phase-changeable memory device includes memory cells each having multiple states, and a program pulse generator...
7480174 Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated  
A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to...
7474555 Integrated circuit including resistivity changing material element  
A phase change memory cell includes a MOS select transistor having a gate coupled to a word line, and a source and drain region coupled between first and second bit lines, respectively. A first...
7471543 Storage device and semiconductor device  
A storage device includes a memory cell having a storage element having a characteristic of changing from a state of a high resistance value to a state of a low resistance value by being supplied...
7471542 Information storage apparatus storing and reading information by irradiating a storage medium with electron beam  
To greatly increase the storage density of a storage apparatus, an electron beam E emitted from a cold cathode 101 is accelerated by an accelerating electrode 102 , caused to converge by a...
7466618 Current limiting antifuse programming path  
Method and apparatus are provided for regulating an antifuse programming current by lightly doping an electrically connected region so that the resistance of the region responds in a non-linear...
7463506 Memory device, memory circuit and semiconductor integrated circuit having variable resistance  
A first variable resistor ( 5 ) is connected between a first terminal ( 7 ) and a third terminal ( 9 ) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage...
7453717 Three-state memory cell  
A memory cell with at least two detectable states among which is an unprogrammed state, comprising, in series between two terminals of application of a read voltage, at least one first branch...
7450414 Method for using a mixed-use memory array  
A method for using a mixed-use memory array is disclosed. In one preferred embodiment, a memory array is provided comprising a first set of memory cells operating as one-time programmable memory...
7447056 Method for using a multi-use memory cell and memory array  
A method for using a multi-use memory cell and memory array are disclosed. In one preferred embodiment, a memory cell is operable as a one-time programmable memory cell or a rewritable memory cell....
7447053 Memory device and method for operating such a memory device  
A memory device and method for operating a memory device is described. In one embodiment, the memory device has at least one memory cell including an active material, a current supply line, and a...
7443721 Semiconductor integrated device  
A semiconductor non volatile memory device capable of multiple write operations with high reliability includes memory cells. Each memory cell of the device has a first electrode, a second...
7440339 Stacked columnar 1T-nMTj MRAM structure and its method of formation and operation  
This invention relates to an MRAM array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher...
7436694 Nonvolatile memory cell  
Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first...
7433222 Nonvolatile semiconductor memory device  
A nonvolatile semiconductor device is configured so that a load circuit applying voltage to a variable resistive element is provided electrically connecting in series to the variable resistive...
7428163 Method and memory circuit for operating a resistive memory cell  
The invention relates to a method for reading a memory datum from a resistive memory cell comprising a selection transistor which is addressable via a control value, the method comprising detecting...
7423906 Integrated circuit having a memory cell  
A memory cell having a programmable solid state electrolyte layer, a writing line and a controllable switch that is arranged between the solid state electrolyte layer and the writing line. The...
7423897 Method of operating a programmable resistance memory array  
A method of operating a programmable resistance memory array. The method comprises writing to all of the programmable resistance elements within the same row of the memory array at substantially...
7411811 Semiconductor storage device  
In a semiconductor storage device with cross point type arrays of memory cells including variable resistor elements, a selected data line and unselected data lines are supplied with a row selecting...
7411803 Resistive coupled hall effect sensor  
A memory device. There is a hall effect device, a current source in electrical communication with the hall effect device, a current drain in electrical communication with the hall effect device, a...
7405963 Dynamic data restore in thyristor-based memory device  
A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal...
7397688 Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor  
Provided are a nonvolatile variable resistor with a structure capable of suppressing an increase in resistance in a case where scaling is applied to reduce a projected area on a plane, a memory...
7397681 Nonvolatile memory devices having enhanced bit line and/or word line driving capability  
Phase-changeable random access memory (PRAM) devices include a plurality of rows and columns of PRAM memory cells therein and at least one local bit line electrically coupled to a column of the...
7382647 Rectifying element for a crosspoint based memory array architecture  
An asymmetrically programmed memory material (such as a solid electrolyte material) is described for use as a rectifying element for driving symmetric or substantially symmetric resistive memory...
7376036 Semiconductor device including fuse and method for testing the same capable of suppressing erroneous determination  
In a method for testing whether or not a fuse on a semiconductor substrate is disconnected, a first test operation is performed upon the fuse by determining whether or not a resistance value of the...
7366003 Method of operating a complementary bit resistance memory sensor and method of operation  
A method and apparatus are disclosed for sensing the resistance state of a resistance-based memory element using complementary resistance-based elements, one holding the resistance state being...
7366002 Method and storage device for the permanent storage of data  
It is proposed that bitline inversion coding data be integrally stored in the structure of a column multiplexer of a storage device. For this purpose, connections to a predefined potential are...
7365354 Programmable resistance memory element and method for making same  
A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode,...
7359230 Nonvolatile memory device  
Provided is a nonvolatile memory device including: a storage element; a switching element electrically connected to the storage element; and a plurality of lead wirings electrically connected to...
7359227 Shared address lines for crosspoint memory  
A crosspoint memory includes a shared address line. The shared address line may be coupled to cells above and below the address line in one embodiment. Voltage biasing may be utilized to select one...
7358590 Semiconductor device and driving method thereof  
A semiconductor device includes a memory with a simple structure, an inexpensive semiconductor device, a manufacturing method and a driving method thereof. One feature is that, in a memory which...
7349235 Non-volatile memory device  
A non-volatile memory device according to one embodiment includes a plurality of memory cells each comprising a magneto resistive element and a selection transistor, where the memory cells are...
7348653 Resistive memory cell, method for forming the same and resistive memory array using the same  
A resistive memory cell employs a photoimageable switchable material, which is patternable by actinic irradiation and is reversibly switchable between distinguishable resistance states, as a memory...
7345907 Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements  
A non-volatile memory cell includes a switch able resistor memory element in series with a switch device. An array of such cells may be programmed using only positive voltages. A method for...
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