Matches 101 - 150 out of 223 < 1 2 3 4 5 >
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6987689 Non-volatile multi-stable memory device and methods of making and using the same  
A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element...
6980455 Remote sensed pre-amplifier for cross-point arrays  
In a particular embodiment, there are a plurality of parallel electrically conductive rows and a plurality of parallel electrically conductive columns crossing the rows, thereby forming a...
6958946 Memory storage device which regulates sense voltages  
A memory storage device includes a memory cell configurable to have at least a first conductive state and includes a first and second conductor each electrically coupled to the memory cell. A...
6950331 Organic bistable device and organic memory cells  
A bistable electrical device ( 50 ) employing a bistable body ( 52 ) and a high conductivity material ( 54 ). A sufficient amount of high conductivity material ( 54 ) is included in the bistable...
6937505 Nonvolatile memory cell and nonvolatile semiconductor memory device  
It is an object of the present invention to make it possible to decrease the on-state resistance of a selection transistor of a memory cell without increasing the whole area of a memory cell array...
6934176 Systems for programmable memory using silicided poly-silicon fuses  
The present invention is directed to systems for evaluating one-time programmable memory cells. A threshold current is applied to a resistive circuit, thereby generating a threshold voltage. A read...
6930912 Magnetic memory and driving method therefor  
A magnetic memory includes a plurality of variable resistors arrayed as memory elements in a matrix, a plurality of bit lines each of which is arranged on each row of the matrix and connected to...
6914255 Phase change access device for memories  
A memory may have access devices formed using a chalcogenide material. The access device does not induce a snapback voltage sufficient to cause read disturbs in the associated memory element being...
6891749 Resistance variable ‘on ’ memory  
A resistance variable memory element and method for stabilizing the resistance variable memory element by providing a first and second electrode connected to a resistance variable material whereby...
6885602 Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor  
A programming method which controls the amount of a write current applied to a Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming...
6882553 Stacked columnar resistive memory structure and its method of formation and operation  
This invention relates to a resistive memory array architecture which incorporates certain advantages from both cross-point and one transistor per cell architectures during reading operations. The...
6879508 Memory device array having a pair of magnetic bits sharing a common conductor line  
A data storage device having parallel memory planes is disclosed. Each memory plane includes a first resistive cross point plane of memory cells, a second resistive cross point plane of memory...
6873538 Programmable conductor random access memory and a method for writing thereto  
The present invention provides an improved write circuit and method for writing a programmable conductor random access memory (PCRAM) cell. The method comprises precharging a bit line to a first...
6873540 Molecular memory cell  
A memory cell is provided with a pair of electrodes, and an active layer sandwiched between the electrodes and including a molecular system and ionic complexes distributed in the molecular system....
6867996 Single-polarity programmable resistance-variable memory element  
A resistance variable memory element with improved data retention and switching characteristics switched between resistance memory states upon the application of write pulses having the same...
6862214 Phase change memory array  
A phase change memory includes a plurality of word lines, a plurality of bits lines intersecting the word lines, and a plurality of memory cells arranged in rows along the word lines and located at...
6859390 Phase-change memory element and method of storing data therein  
A phase-change memory element including a phase-change material. The phase-change memory element has a plurality of memory state wherein each of the memory states has a corresponding threshold...
6856536 Non-volatile memory with a single transistor and resistive memory element  
Non-volatile memory cell with a single semiconductor device per memory cell. The present invention generally allows for a plurality of memory cells to be formed on a semiconductor substrate that...
6847543 Non-volatile memory circuit, a method for driving the same, and a semiconductor device using the memory circuit  
A non-volatile memory circuit comprising first and second transistors ( 101, 102 ) each having a gate and a drain, wherein the gates of these transistors are connected to each other and the drains...
6813176 Method of retaining memory state in a programmable conductor RAM  
A non-volatile memory device, such as a Programmable Conductor Random Access Memory (PCRAM) device, having an exemplary memory stored state retention characteristic is disclosed. There is provided...
6809955 Addressable and electrically reversible memory switch  
A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control...
6798685 Multi-output multiplexor  
Providing a multi-output multiplexor. The invention is multi-output multiplexor that, depending on the control signals, allows various modulating circuits to pass no voltage, pass some voltage or...
6798684 Methods and systems for programmable memory using silicided poly-silicon fuses  
The present invention is directed to methods and systems for evaluating one-time programmable memory cells. A threshold current is applied to a resistive circuit, thereby generating a threshold...
6791859 Complementary bit PCRAM sense amplifier and method of operation  
A method and apparatus is disclosed for sensing the resistance state of a Programmable Conductor Random Access Memory (PCRAM) element using complementary PCRAM elements, one holding the resistance...
6785154 MRAM and access method thereof  
A magnetic random access memory (MRAM) circuit block and access method thereof are disclosed herein which includes a circuit for sensing a data write current passing through a bitline 32 and, for...
6781860 High voltage row and column driver for programmable resistance memory  
A driver circuit having one or more MOS transistors. The driver circuit is capable of providing an output voltage greater than the power supply voltage; however, the magnitude of the voltages...
6778420 Method of operating programmable resistant element  
A method of programming a programmable resistance element. The programmable resistance element may be programmed to a BLOWN state. After being programmed to the BLOWN state, the element can no...
6760245 Molecular wire crossbar flash memory  
A nano-scale flash memory comprises: (a) source and drain regions in a plurality of approximately parallel first wires, the first wires comprising a semiconductor material, the source and drain...
6751114 Method for programming a memory cell  
A method for reading and verifying the state of a memory cell during a write operation before writing allows a decision to be made whether to write to the cell or not based on the current state of...
6731528 Dual write cycle programmable conductor memory system and method of operation  
The present invention provides a method and apparatus for writing a programmable conductor random access memory (PCRAM) element. After a read operation of the memory element a complement logical...
6707712 Method for reading a structural phase-change memory  
A cell in a structural phase-change memory is programmed by raising cell voltage and cell current to programming threshold levels, and then lowering these to quiescent levels below their...
6690597 Multi-bit PROM memory cell  
A memory cell comprises at least two antifuses in series with a diode. Each antifuse expresses a different resistance from the others when blown, and each requires an escalating programming voltage...
6643161 Write-once polymer memory with e-beam writing and reading  
Storing a data bit includes exposing a volume of a polymer, having a first conductivity, to an electron beam. Exposing damages cross-links in the volume of material. A first conductivity of the...
6625055 Multiple logical bits per memory cell in a memory device  
A read-only memory device is described having non-volatile memory cells that include a memory component connected between electrically conductive traces. A memory component is formed to include a...
6608773 Programmable resistance memory array  
A memory system, comprising: a memory cell comprising a programmable resistance element programmable to at least a first resistance state and a second resistance state. The memory cell...
6597009 Reduced contact area of sidewall conductor  
A method including, in a dielectric material over a contact on a substrate, forming a trench to the contact; introducing an electrode material along the sidewalls of the trench; introducing a phase...
6597598 Resistive cross point memory arrays having a charge injection differential sense amplifier  
A data storage device that includes a resistive cross point array of memory cells, a plurality of word lines, and a plurality of bit lines, and a sense amplifier that utilizes an injection charge...
6597600 Offset compensated sensing for magnetic random access memory  
An offset compensated memory element voltage supply including a differential amplifier with a compensation circuit, and a transistor with a gate connected to the output of the differential...
6590807 Method for reading a structural phase-change memory  
A cell in a structural phase-change memory is programmed by raising cell voltage and cell current to programming threshold levels, and then lowering these to quiescent levels below their...
6570795 Defective memory component of a memory device used to represent a data bit in a bit sequence  
A memory device includes memory components that represent a logic value corresponding to a data bit in a bit sequence. A defective memory component in the memory device represents a data bit in the...
6570782 Storage and retrieval for resistance-based memory devices  
Methods for storing a bit sequence are provided. A representative method for storing a bit sequence includes converting a first bit sequence containing a first number of low-resistance bits into a...
6542397 Read only memory structure  
An apparatus including at least one designated memory cell of a plurality of memory cells. Disposed within each designated memory cell is a resistance-altering constituent. Consequently, a first...
6483734 Memory device having memory cells capable of four states  
A memory device includes memory cells having a re-writeable element and a write-once element in series with the re-writeable element. The re-writeable element is programmable between a high...
6480438 Providing equal cell programming conditions across a large and high density array of phase-change memory cells  
To provide equal cell programming conditions, the integrated circuit device has a number of bitline compensation elements each coupled in series with a separate bitline, and a number of wordline...
6456525 Short-tolerant resistive cross point array  
A data storage device includes a resistive cross point array of memory cells. Each memory cell includes a memory element and a resistive element connected in series with the memory element. The...
6424557 Integrated device with trimming elements  
An integrated device comprises at least one circuit element and a plurality of trimming elements which can be connected selectively to the at least one circuit element in order to achieve a...
6314014 Programmable resistance memory arrays with reference cells  
A memory system comprising memory cells and reference cells each including a programmable resistance element. The resistance state of a memory cell is determined by comparing a sense signal...
6236587 Read-only memory and read-only memory devices  
A read-only memory is made electrically addressable over a passive conductor matrix, wherein at least a portion of the volume between intersection of two conductors (2;4) in the matrix defines a...
6188615 MRAM device including digital sense amplifiers  
Resistance of a selected memory cell in a Magnetic Random Access Memory ("MRAM") device is sensed by a read circuit including a direct injection charge amplifier, an integrator capacitor and a...
6147925 Semiconductor device allowing fast sensing with a low power supply voltage  
In a shared sense amplifier structure, a bit line isolating gate connecting a selected memory block and a sense amplifier circuit is set to a high-resistance ON state when a sensing operation is...
Matches 101 - 150 out of 223 < 1 2 3 4 5 >